18598417. IMAGE SENSORS simplified abstract (Samsung Electronics Co., Ltd.)
Contents
IMAGE SENSORS
Organization Name
Inventor(s)
Masato Fujita of Suwon-si (KR)
IMAGE SENSORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18598417 titled 'IMAGE SENSORS
The abstract describes an image sensor comprising two stacks, each with different components, separated by an insulation layer.
- First stack:
- Includes a semiconductor substrate with a photoelectric conversion region and a floating diffusion region for storing charges.
- Second stack:
- Consists of a semiconductor substrate with a transmission gate that extends into the first stack.
- Insulation layer:
- Positioned between the first and second stacks to provide electrical isolation.
Potential Applications: - This technology can be used in digital cameras, smartphones, and other devices requiring image sensors. - It can also be applied in security cameras, medical imaging equipment, and automotive cameras.
Problems Solved: - Enhances the efficiency and performance of image sensors by improving charge storage and transmission. - Increases the sensitivity and resolution of images captured by the sensor.
Benefits: - Improved image quality and clarity. - Enhanced low-light performance. - Higher overall sensor performance and reliability.
Commercial Applications: - This technology has significant commercial potential in the consumer electronics industry, particularly in the development of high-quality cameras for various devices.
Questions about Image Sensor Technology: 1. How does the floating diffusion region in the first stack contribute to the performance of the image sensor? 2. What are the specific advantages of having a transmission gate extending into the first stack in the second stack of the image sensor?
Original Abstract Submitted
An image sensor includes: a first stack including: a first semiconductor substrate including a first surface and a second surface opposite to the first surface, a photoelectric conversion region in the first semiconductor substrate, and a floating diffusion region in the first semiconductor substrate, the floating diffusion region being configured to store charges transferred from the photoelectric conversion region; a second stack including: a second semiconductor substrate including a first surface and a second surface opposite the first surface, and a transmission gate penetrating through the second semiconductor substrate and extending into the first stack; and an insulation layer between the first stack and the second stack.
