18601467. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Seungbo Ko of Suwon-si (KR)

Sujin Kang of Suwon-si (KR)

Jongmin Kim of Suwon-si (KR)

Donghyuk Ahn of Suwon-si (KR)

Jiwon Oh of Suwon-si (KR)

Chansic Yoon of Suwon-si (KR)

Myeongdong Lee of Suwon-si (KR)

Minyoung Lee of Suwon-si (KR)

Inho Cha of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18601467 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract includes a substrate, a word line, a bit line, and a spacer structure. The bit line consists of multiple conductive layers stacked vertically on the substrate, while the spacer structure includes a depletion stopping layer and an inner spacer.

• The semiconductor device features a unique spacer structure on one sidewall of the bit line.
• The spacer structure includes a depletion stopping layer with a material layer having a low interfacial trap density.
• The inner spacer extends vertically on one sidewall of the depletion stopping layer.

Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It can improve the performance and efficiency of memory storage systems.

Problems Solved: - Enhances the reliability and functionality of semiconductor devices. - Reduces the risk of electrical interference and data loss.

Benefits: - Improved overall performance of semiconductor devices. - Enhanced durability and longevity of memory storage systems.

Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Memory Storage This technology can be utilized in the production of high-performance memory storage devices for various industries, including consumer electronics, data centers, and telecommunications.

Questions about the technology: 1. How does the spacer structure contribute to the overall efficiency of the semiconductor device?

  The spacer structure helps to reduce electrical interference and improve the reliability of the device.

2. What are the potential long-term benefits of implementing this technology in memory storage systems?

  By enhancing the performance and durability of memory storage systems, this technology can lead to more reliable and efficient data storage solutions.

Original Abstract Submitted

A semiconductor device includes a substrate, a word line extending on the substrate in a first horizontal direction, a bit line extending on the substrate in a second horizontal direction perpendicular to the first horizontal direction, and a spacer structure on one sidewall of the bit line, wherein the bit line includes a lower conductive layer, an intermediate conductive layer, and an upper conductive layer stacked in a vertical direction on the substrate, and the spacer structure includes a depletion stopping layer on one sidewall of the lower conductive layer, extending in the vertical direction and including a material layer having an interfacial trap density less than an interfacial trap density of a silicon nitride layer, and an inner spacer extending in the vertical direction and on one sidewall of the depletion stopping layer.