Denso corporation (20240321951). FIELD EFFECT TRANSISTOR simplified abstract
Contents
FIELD EFFECT TRANSISTOR
Organization Name
Inventor(s)
Ryota Suzuki of Nisshin-shi (JP)
FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321951 titled 'FIELD EFFECT TRANSISTOR
Simplified Explanation: The patent application describes a field effect transistor design where trench lower layers are positioned directly beneath corresponding trenches. Deep layers of p-type material run along one direction intersecting the trenches and are spaced at intervals along a perpendicular direction. A drain-side layer of n-type material extends from a contact point with a lower surface of a body layer to below the lower end of each deep layer through spaces between them. This drain-side layer includes high and intermediate concentration layers within specific depth ranges.
- The patent describes a unique layout of layers in a field effect transistor.
- Trench lower layers are placed directly under the trenches for improved performance.
- Deep p-type layers are arranged in a specific pattern for optimal functionality.
- The drain-side layer of n-type material is distributed strategically for efficient operation.
- The inclusion of high and intermediate concentration layers enhances transistor performance.
Potential Applications: This technology can be applied in the manufacturing of advanced field effect transistors for various electronic devices such as smartphones, computers, and other semiconductor-based products.
Problems Solved: This design addresses issues related to transistor efficiency, heat dissipation, and overall performance by optimizing the layer layout and material distribution.
Benefits: - Improved transistor performance - Enhanced heat dissipation - Increased efficiency in electronic devices - Potential for smaller and more powerful devices - Better overall functionality in semiconductor applications
Commercial Applications: The technology can be utilized in the production of high-performance electronic devices, leading to faster and more reliable products in the consumer electronics market. This innovation could also have implications in the development of advanced computing systems and telecommunications equipment.
Questions about Field Effect Transistors: 1. What are the key differences between field effect transistors and bipolar junction transistors? 2. How does the design of a field effect transistor impact its overall efficiency and performance?
Frequently Updated Research: Researchers are constantly exploring new materials and designs to further enhance the capabilities of field effect transistors. Stay updated on the latest advancements in semiconductor technology to understand the evolving landscape of electronic devices.
Original Abstract Submitted
in a field effect transistor, trench lower layers are disposed directly below corresponding trenches. deep layers of p-type extend along a first direction intersecting the trenches and are arranged at intervals along a second direction orthogonal to the first direction. a drain-side layer of n-type is distributed from a position in contact with a lower surface of a body layer to a position below a lower end of each of the deep layers through intervals between the deep layers. the drain-side layer includes a high concentration layer distributed in at least a part of a depth range in which both the deep layers and the trench lower layers are present, and an intermediate concentration layer distributed in at least a part of a depth range between a lower end of the high concentration layer and a lower end of each of the deep layers.
