Micron technology, inc. (20240321327). PRE-DECODER CIRCUITRY simplified abstract
Contents
PRE-DECODER CIRCUITRY
Organization Name
Inventor(s)
Byung S. Moon of Plano TX (US)
Ramachandra Rao Jogu of McKinney TX (US)
PRE-DECODER CIRCUITRY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321327 titled 'PRE-DECODER CIRCUITRY
The present disclosure involves apparatuses, methods, and systems for pre-decoder circuitry in memory arrays.
- Memory array with multiple memory cells
- Decoder circuitry connected to the memory array
- Pre-decoder circuitry providing bias conditions for selection signals
- Bias condition includes positive and negative voltages for gates
- Positive configuration for memory cells has positive voltage for first gate and negative voltage for second gate
- Negative configuration for memory cells has zero volts for first gate and negative voltage for second gate
Potential Applications: - Memory storage devices - Computer systems - Data processing systems
Problems Solved: - Efficient selection of memory cells - Improved performance of memory arrays
Benefits: - Faster data access - Enhanced memory array functionality
Commercial Applications: Title: Advanced Memory Array Technology for Improved Data Processing This technology can be used in various commercial applications such as: - High-speed computing systems - Data centers - Consumer electronics
Prior Art: Readers can explore prior art related to pre-decoder circuitry in memory arrays in semiconductor technology journals and patent databases.
Frequently Updated Research: Stay updated on the latest advancements in memory array technology and pre-decoder circuitry by following research publications in the field.
Questions about Memory Array Pre-Decoder Circuitry: 1. How does pre-decoder circuitry improve memory array performance? Pre-decoder circuitry enhances memory array performance by providing efficient bias conditions for selecting memory cells.
2. What are the potential applications of memory array pre-decoder circuitry? Memory array pre-decoder circuitry can be used in various applications such as data processing systems, computer systems, and memory storage devices.
Original Abstract Submitted
the present disclosure includes apparatuses, methods, and systems for pre-decoder circuitry. an embodiment includes a memory array including a plurality of memory cells, decoder circuitry coupled to the memory array, wherein the decoder circuitry comprises a first n-type transistor having a first gate and a second n-type transistor having a second gate, and pre-decoder circuitry configured to provide a bias condition for the first gate and second gate to provide a selection signal to one of the plurality of memory cells, wherein the bias condition comprises: a positive voltage for the first gate and a negative voltage for the second gate for a positive configuration for the memory cells, and zero volts for the first gate and the negative voltage for the second gate for a negative configuration for the memory cells.
