Kioxia corporation (20240324238). STORAGE DEVICE simplified abstract

STORAGE DEVICE

Organization Name

kioxia corporation

Inventor(s)

Reika Tanaka of Yokohama Kanagawa (JP)

Kunifumi Suzuki of Yokkaichi Mie (JP)

Kiwamu Sakuma of Yokkaichi Mie (JP)

Yoko Yoshimura of Yokkaichi Mie (JP)

Takamasa Hamai of Nagoya Aichi (JP)

Kensuke Ota of Yokohama Kanagawa (JP)

Yusuke Higashi of Zushi Kanagawa (JP)

Yoshiaki Asao of Kawasaki Kanagawa (JP)

Masamichi Suzuki of Koto Tokyo (JP)

STORAGE DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240324238 titled 'STORAGE DEVICE

The storage device described in the abstract consists of multiple layers including electrodes, dielectric layers, and an intermediate region with metallic portions.

• The storage device includes a first electrode, a second electrode, and dielectric layers with specific materials like hafnium and zirconium.
• The first dielectric layer contains oxygen and at least one of hafnium and zirconium, while the second dielectric layer is positioned between the first electrode and the first dielectric layer.
• The intermediate region between the dielectric layers contains metallic portions that contribute to the functionality of the storage device.

Potential Applications: This technology could be used in various electronic storage devices such as flash drives, solid-state drives, and memory cards.

Problems Solved: The storage device addresses the need for efficient and reliable data storage solutions in electronic devices.

Benefits: The use of specific materials in the dielectric layers enhances the performance and durability of the storage device, providing a more stable and long-lasting data storage solution.

Commercial Applications: This technology could have significant commercial applications in the consumer electronics industry, particularly in the development of high-performance storage devices for various electronic devices.

Questions about the Technology: 1. How does the use of hafnium and zirconium in the dielectric layers improve the performance of the storage device? 2. What are the potential challenges in implementing this technology in commercial electronic devices?

Original Abstract Submitted

a storage device includes a first electrode, a second electrode, a first dielectric layer between the first and second electrodes and including oxygen and at least one of hafnium and zirconium, a second dielectric layer between the first electrode and the first dielectric layer, and an intermediate region between the first and second dielectric layers and in which a plurality of metallic portions are provided.