Kabushiki kaisha toshiba (20240321972). SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

kabushiki kaisha toshiba

Inventor(s)

Shinya Sato of Nonoichi Ishikawa (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321972 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract includes various components such as electrodes, semiconductor regions of different conductivity types, and regions with varying concentrations of carbon and other elements.

• The device consists of a first electrode, a first semiconductor region, a first region with higher carbon concentration, a second semiconductor region, and a second electrode.
• The concentration of carbon in the first region is greater than in the first semiconductor region, while the concentration of a specific element (e.g., platinum, gold, iron, copper, or nickel) is also higher in the first region compared to the first semiconductor region.
• The second semiconductor region is located on the first semiconductor region, and the second electrode is located on the second semiconductor region.

Potential Applications:

• This semiconductor device could be used in various electronic applications requiring precise control over conductivity and element concentrations.
• It may find applications in power electronics, sensors, or other semiconductor-based devices.

Problems Solved:

• This technology addresses the need for semiconductor devices with tailored properties such as specific element concentrations and conductivity levels.

Benefits:

• The device offers enhanced control over semiconductor properties, potentially leading to improved performance in electronic applications.
• It provides a platform for exploring new semiconductor materials and designs.

Commercial Applications:

• The technology could have commercial applications in industries such as electronics, telecommunications, and automotive where precise semiconductor control is crucial for device performance.

Questions about the Technology: 1. How does the concentration of carbon in the first region affect the overall performance of the semiconductor device? 2. What are the potential implications of having higher concentrations of specific elements in the first region compared to the first semiconductor region?

Original Abstract Submitted

according to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a first region, a second semiconductor region of a second conductivity type, and a second electrode. the first semiconductor region is located on the first electrode. the first region is located in the first semiconductor region. a concentration of carbon in the first region is greater than a concentration of carbon in the first semiconductor region. a concentration of a first element in the first region is greater than a concentration of the first element in the first semiconductor region. the first element is at least one selected from the group consisting of platinum, gold, iron, copper, and nickel. the second semiconductor region is located on the first semiconductor region. the second electrode is located on the second semiconductor region.