Kabushiki kaisha toshiba (20240321969). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Takuma Suzuki of Himeji Hyogo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321969 titled 'SEMICONDUCTOR DEVICE
The embodiment is a semiconductor device containing silicon carbide. The semiconductor device includes a semiconductor substrate, a first semiconductor portion, a second semiconductor portion, a third semiconductor portion, and a fourth semiconductor portion. Each of the first semiconductor portion to the third semiconductor portion contains impurities having a first conductivity type, and the fourth semiconductor portion contains impurities having a second conductivity type. A carrier concentration of the second semiconductor portion is the same as or lower than a carrier concentration of the first semiconductor portion. The carrier concentration of the second semiconductor portion is the same as or higher than a carrier concentration of the third semiconductor portion. A point defect density of the second semiconductor portion is the same as or higher than a point defect density of the first semiconductor portion, and is higher than a point defect density of the third semiconductor portion.
- The semiconductor device contains silicon carbide.
- It includes multiple semiconductor portions with different impurities for conductivity.
- The carrier concentration and point defect density vary across the semiconductor portions.
- The second semiconductor portion has specific carrier concentration and point defect density relationships with the first and third semiconductor portions.
- This design aims to optimize the performance of the semiconductor device.
Potential Applications: - Power electronics - High-temperature applications - Electric vehicles - Renewable energy systems
Problems Solved: - Enhancing semiconductor device performance - Improving efficiency in power electronics - Increasing reliability in high-temperature environments
Benefits: - Higher efficiency - Improved reliability - Better performance in extreme conditions
Commercial Applications: Title: Advanced Silicon Carbide Semiconductor Devices for Power Electronics This technology can be used in power electronics for various industries such as automotive, aerospace, and renewable energy. It offers enhanced performance and reliability in demanding applications.
Prior Art: Prior research on silicon carbide semiconductor devices and their applications in power electronics can provide valuable insights into the development of this technology.
Frequently Updated Research: Researchers are continually exploring ways to further optimize silicon carbide semiconductor devices for improved efficiency and performance.
Questions about Silicon Carbide Semiconductor Devices: 1. How does the carrier concentration affect the performance of silicon carbide semiconductor devices?
- The carrier concentration influences the conductivity and overall efficiency of the semiconductor device.
2. What are the key challenges in manufacturing silicon carbide semiconductor devices?
- The challenges may include material purity, process control, and device integration.
Original Abstract Submitted
the embodiment is a semiconductor device containing silicon carbide. the semiconductor device includes a semiconductor substrate, a first semiconductor portion, a second semiconductor portion, a third semiconductor portion, and a fourth semiconductor portion. each of the first semiconductor portion to the third semiconductor portion contains impurities having a first conductivity type, and the fourth semiconductor portion contains impurities having a second conductivity type. a carrier concentration of the second semiconductor portion is the same as or lower than a carrier concentration of the first semiconductor portion. the carrier concentration of the second semiconductor portion is the same as or higher than a carrier concentration of the third semiconductor portion. a point defect density of the second semiconductor portion is the same as or higher than a point defect density of the first semiconductor portion, and is higher than a point defect density of the third semiconductor portion.
