Kabushiki kaisha toshiba (20240321963). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shunta Murai of Kanazawa Ishikawa (JP)
Daiki Yoshikawa of Kanazawa Ishikawa (JP)
Kazutoshi Nakamura of Nonoichi Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321963 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of various regions and electrodes, including first and second regions, first and second electrodes, and multiple semiconductor regions of different conductivity types.
- The first region contains a combination of semiconductor regions of different conductivity types, along with a gate electrode and a conductive part.
- The gate electrode is positioned facing one of the semiconductor regions via a gate insulating layer.
- The conductive part is located facing another semiconductor region via an insulating layer and is electrically connected to the second electrode.
- Additional semiconductor regions of different conductivity types are also present in the device.
Potential Applications: - This semiconductor device could be used in various electronic applications requiring precise control of conductivity types and regions.
Problems Solved: - This technology addresses the need for efficient and controlled semiconductor devices with multiple regions of different conductivity types.
Benefits: - The device offers a compact and efficient solution for electronic applications that require complex semiconductor structures.
Commercial Applications: - This technology could be valuable in the development of advanced electronic devices, potentially impacting industries such as telecommunications, computing, and power electronics.
Questions about the Technology: 1. How does the presence of multiple semiconductor regions of different conductivity types impact the performance of the device? 2. What are the potential challenges in manufacturing and integrating this semiconductor device into electronic systems?
Original Abstract Submitted
according to one embodiment, a semiconductor device includes first and second electrodes, and first and second regions. the first region includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a plurality of third semiconductor regions of the first conductivity type, a gate electrode, a conductive part, a fourth semiconductor region of the second conductivity type, a fifth semiconductor region of the first conductivity type, and a sixth semiconductor region of the second conductivity type. the gate electrode faces one of the plurality of third semiconductor regions via a gate insulating layer. the conductive part faces another one of the plurality of third semiconductor regions via an insulating layer, and is electrically connected with the second electrode. the fourth and six semiconductor regions are located on the one and the other one of the plurality of third semiconductor regions, respectively.
