Kabushiki kaisha toshiba (20240321945). CAPACITOR simplified abstract
Contents
CAPACITOR
Organization Name
Inventor(s)
Tatsuya Ohguro of Kanazawa Ishikawa (JP)
CAPACITOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321945 titled 'CAPACITOR
The abstract describes a capacitor with a semiconductor substrate, an electrode layer containing a metal silicide, a dielectric film, and terminals connected to the electrode layer and substrate.
- The capacitor includes a semiconductor substrate with an electrode layer containing a metal silicide.
- A dielectric film insulates the electrode layer from the semiconductor substrate.
- Terminals are connected to the electrode layer and semiconductor substrate.
- This design allows for efficient energy storage and discharge in electronic devices.
- The use of metal silicide enhances the capacitor's performance and durability.
Potential Applications:
- This technology can be used in various electronic devices such as smartphones, laptops, and power supplies.
- It can also be applied in renewable energy systems for energy storage purposes.
Problems Solved:
- Improves energy storage efficiency in electronic devices.
- Enhances the durability and performance of capacitors.
Benefits:
- Increased energy storage capacity.
- Improved efficiency in electronic devices.
- Enhanced durability and longevity of capacitors.
Commercial Applications:
- This technology can be utilized in the consumer electronics industry, renewable energy sector, and power management systems.
Questions about Capacitors: 1. How does the use of metal silicide in the electrode layer benefit the capacitor's performance? 2. What are the potential challenges in implementing this technology in mass-produced electronic devices?
Frequently Updated Research:
- Ongoing research focuses on further optimizing the capacitor design for increased energy storage capacity and efficiency.
Original Abstract Submitted
according to one embodiment, a capacitor includes a semiconductor substrate, an electrode layer extending from a surface of the semiconductor substrate into the semiconductor substrate and containing a metal silicide in the semiconductor substrate, a dielectric film provided between the electrode layer and the semiconductor substrate and electrically insulating the electrode layer from the semiconductor substrate, a first terminal connected to the electrode layer, and a second terminal connected to the semiconductor substrate.
