Kabushiki kaisha toshiba (20240321869). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kazutoshi Nakamura of Nonoichi Ishikawa (JP)
Shunta Murai of Kanazawa Ishikawa (JP)
Daiki Yoshikawa of Kanazawa Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321869 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation: The semiconductor device described in the abstract includes various semiconductor regions with different conductivity types and impurity concentrations.
- The device has a first electrode and a second electrode that are separated.
- It consists of multiple semiconductor regions, including regions of different conductivity types.
- The impurity concentrations in certain semiconductor regions are higher than others, affecting their conductivity.
Key Features and Innovation:
- Presence of multiple semiconductor regions with varying impurity concentrations and conductivity types.
- Specific positioning of semiconductor regions to achieve desired electrical properties.
- Utilization of different impurity concentrations to control conductivity within the device.
Potential Applications:
- Semiconductor devices for electronic circuits.
- Power electronics applications.
- Sensor technologies.
Problems Solved:
- Control of conductivity in semiconductor devices.
- Optimization of electrical properties.
- Enhanced performance of electronic components.
Benefits:
- Improved efficiency in electronic devices.
- Enhanced control over electrical characteristics.
- Potential for higher performance in semiconductor applications.
Commercial Applications: Potential commercial applications include:
- Integrated circuits for consumer electronics.
- Power management systems.
- Sensor technologies for various industries.
Prior Art: Readers can explore prior art related to semiconductor device structures, impurity concentration control, and semiconductor region positioning in electronic devices.
Frequently Updated Research: Stay updated on research related to semiconductor device design, impurity concentration effects on conductivity, and advancements in semiconductor technology.
Questions about Semiconductor Devices: 1. What are the key factors influencing the conductivity of semiconductor devices? 2. How does impurity concentration impact the performance of semiconductor components?
Original Abstract Submitted
according to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first region, and a second region. the second electrode is separated from the first electrode. the first region includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a fourth semiconductor region of the second conductivity type, a fifth semiconductor region of the first conductivity type, and a sixth semiconductor region of the first conductivity type. the fifth semiconductor region, located between the fourth semiconductor region and a portion of the third semiconductor region, has a higher first-conductivity-type impurity concentration than the third semiconductor region. the sixth semiconductor region, located between the third semiconductor region and the portion of the second electrode, has a higher first-conductivity-type impurity concentration than the third semiconductor region.
