Kabushiki kaisha toshiba (20240321545). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hiroko Nakamura of Yokohama Kanagawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321545 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of two chips stacked on top of each other, each with multiple through-holes for charged particle beams to pass through. The first chip has a first substrate surface with first electrodes for beam deflection, while the second chip has a third substrate surface with third electrodes for the same purpose.
- The device features a unique electrode pattern that is asymmetrical between the two chips, providing precise control over the charged particle beams.
- The first and third electrodes serve as pairs for deflecting the beams, while the second and fourth electrodes are additional patterns for beam manipulation.
- By controlling the charged particle beams with different electrode configurations, the device offers enhanced functionality and performance in semiconductor applications.
Potential Applications: - Semiconductor manufacturing - Beam lithography - Particle beam microscopy
Problems Solved: - Precise control of charged particle beams - Enhanced functionality in semiconductor devices
Benefits: - Improved accuracy in beam manipulation - Enhanced performance in semiconductor applications
Commercial Applications: Title: Advanced Semiconductor Device for Precise Beam Control This technology can be utilized in semiconductor manufacturing processes, beam lithography systems, and particle beam microscopy applications. Its precise beam control capabilities offer enhanced performance and accuracy in various semiconductor processes, making it a valuable tool for research and industrial applications.
Questions about the technology: 1. How does the asymmetrical electrode pattern contribute to the precise control of charged particle beams? 2. What are the potential advantages of using this semiconductor device in beam lithography compared to traditional methods?
Original Abstract Submitted
a semiconductor device includes: a first chip having a first substrate surface, a second substrate surface provided on a side opposite to the first substrate surface, and a plurality of first through holes, a plurality of charged particle beams passing through the first through holes; a second chip provided on the first chip and having a third substrate surface facing the second substrate surface, a fourth substrate surface, and a plurality of second through holes provided on the first through holes, the charged particle beams passing through the second through holes; a plurality of first electrodes provided on the first substrate surface so as to be adjacent to the first through holes; a plurality of second electrodes provided on the first substrate surface; a plurality of third electrodes provided on the fourth substrate surface so as to be adjacent to the second through holes; and a plurality of fourth electrodes provided on the fourth substrate surface, wherein the first electrodes are a first pair of electrodes for deflecting the charged particle beams, the third electrodes are a second pair of electrodes for deflecting the charged particle beams, the second electrode and the fourth electrode are an additional electrode pattern other than the first pair of electrodes and the second pair of electrodes for deflecting the charged particle beams, and an electrode pattern formed by the first electrode and the second electrode on the first substrate surface and an electrode pattern formed by the third electrode and the fourth electrode on the fourth substrate surface are not symmetrical with respect to opposite substrate surfaces of the two chips.
