Qualcomm incorporated (20240321965). SELECTIVE CONTACT ON SOURCE AND DRAIN simplified abstract
Contents
SELECTIVE CONTACT ON SOURCE AND DRAIN
Organization Name
Inventor(s)
Junjing Bao of San Diego CA (US)
Chih-Sung Yang of Hsinchu City (TW)
Kwanyong Lim of San Diego CA (US)
Ming-Huei Lin of New Taipei City (TW)
Hyunwoo Park of San Diego CA (US)
Haining Yang of San Diego CA (US)
SELECTIVE CONTACT ON SOURCE AND DRAIN - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321965 titled 'SELECTIVE CONTACT ON SOURCE AND DRAIN
Simplified Explanation: The patent application describes devices with contacts for electrical connection that occupy the full width of a contact well, reducing resistivity.
- Contacts occupy full width of contact well
- Reduces or eliminates high resistivity
- Eliminates presence of liners and nucleation layers within the contact well
- Improves electrical connection with source/drain
- Enhances overall device performance
Key Features and Innovation: - Contacts occupying full width of contact well - Reduction or elimination of high resistivity - Improved electrical connection with source/drain - Enhanced device performance
Potential Applications: - Semiconductor devices - Integrated circuits - Electronics industry
Problems Solved: - High resistivity in conventional devices - Inefficient electrical connection - Performance limitations in semiconductor devices
Benefits: - Improved device performance - Enhanced electrical connection - Reduced resistivity - Increased efficiency in semiconductor devices
Commercial Applications: Title: Enhanced Semiconductor Device Contacts for Improved Performance Potential commercial uses include: - Semiconductor manufacturing companies - Electronics industry for integrated circuits - Research and development in semiconductor technology
Questions about Enhanced Semiconductor Device Contacts for Improved Performance: 1. How do the contacts in this technology differ from conventional devices? 2. What are the main benefits of reducing resistivity in semiconductor devices?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology to enhance performance and efficiency.
Original Abstract Submitted
disclosed are devices that include a contact for electrical connection with a source/drain. the contact occupies a full width of a contact well other than areas occupied by sidewall spacers. as a result, high resistivity (due to the presence of liners and nucleation layers within the contact well in conventional devices) is reduced or eliminated.
- Qualcomm incorporated
- Junjing Bao of San Diego CA (US)
- Xia Li of San Diego CA (US)
- Chih-Sung Yang of Hsinchu City (TW)
- Kwanyong Lim of San Diego CA (US)
- Ming-Huei Lin of New Taipei City (TW)
- Hyunwoo Park of San Diego CA (US)
- Haining Yang of San Diego CA (US)
- H01L29/08
- H01L21/768
- H01L21/8234
- H01L27/088
- H01L29/66
- CPC H01L29/0847