Qualcomm incorporated (20240321724). METAL-INSULATOR-METAL (MIM) CAPACITOR INTERCONNECT FOR HIGH-QUALITY (Q) INDUCTOR-CAPACITOR (LC) FILTER simplified abstract

From WikiPatents
Revision as of 06:29, 27 September 2024 by Wikipatents (talk | contribs) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

METAL-INSULATOR-METAL (MIM) CAPACITOR INTERCONNECT FOR HIGH-QUALITY (Q) INDUCTOR-CAPACITOR (LC) FILTER

Organization Name

qualcomm incorporated

Inventor(s)

Doosoub Shin of Incheon (KR)

Changhan Hobie Yun of San Diego CA (US)

Youngju Park of Incheon (KR)

METAL-INSULATOR-METAL (MIM) CAPACITOR INTERCONNECT FOR HIGH-QUALITY (Q) INDUCTOR-CAPACITOR (LC) FILTER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321724 titled 'METAL-INSULATOR-METAL (MIM) CAPACITOR INTERCONNECT FOR HIGH-QUALITY (Q) INDUCTOR-CAPACITOR (LC) FILTER

Simplified Explanation: The patent application describes a device with a passive substrate containing metallization layers and interconnects for forming passive components.

  • The device includes a passive substrate with a first metallization layer on one surface.
  • The first metallization layer consists of a passive component and a plate portion.
  • An insulator layer is connected to the plate portion, and a conductive interconnect is attached to the insulator layer.
  • The conductive interconnect forms a second passive component linked to the first passive component.
  • A laminate substrate is also connected to the first conductive interconnect.

Key Features and Innovation:

  • Integration of passive components within a device.
  • Use of metallization layers and interconnects for component coupling.
  • Incorporation of insulator layers for electrical isolation.
  • Utilization of laminate substrates for structural support.

Potential Applications: The technology can be applied in electronic circuits, sensors, and communication devices.

Problems Solved: The device addresses the need for compact and efficient passive component integration in electronic systems.

Benefits:

  • Enhanced functionality and performance of electronic devices.
  • Reduction in size and weight of components.
  • Improved reliability and durability of passive components.

Commercial Applications: The technology can be utilized in the manufacturing of smartphones, IoT devices, and automotive electronics.

Prior Art: Readers can explore prior patents related to passive component integration in electronic devices.

Frequently Updated Research: Stay updated on advancements in passive component integration and miniaturization in electronic systems.

Questions about Passive Component Integration: 1. How does the device improve the efficiency of electronic circuits? 2. What are the potential challenges in scaling up this technology for mass production?


Original Abstract Submitted

a device includes a passive substrate having a first metallization layer on a first surface of the passive substrate. the first metallization layer is composed of a first passive component and a first plate portion. the device includes an insulator layer coupled to the first plate portion of the first metallization layer. the device also includes a first conductive interconnect coupled to the insulator layer to form a second passive component coupled to the first passive component. the device further includes a laminate substrate coupled to the first conductive interconnect.