Samsung display co., ltd. (20240324400). DISPLAY APPARATUS simplified abstract
Contents
DISPLAY APPARATUS
Organization Name
Inventor(s)
Junghwa Park of Yongin-si (KR)
Jincheol Jang of Yongin-si (KR)
DISPLAY APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324400 titled 'DISPLAY APPARATUS
Simplified Explanation: The patent application describes a display apparatus with improved impact resistance, featuring specific layers and materials to enhance durability.
Key Features and Innovation:
- Substrate with multiple layers for enhanced impact resistance
- First gate layer with compressive stress between 470 MPa and 1,540 MPa
- Inclusion of molybdenum in the first gate layer for added strength
Potential Applications: The technology could be used in various electronic devices requiring displays, such as smartphones, tablets, and laptops.
Problems Solved: This technology addresses the issue of display screens being vulnerable to impact damage, increasing the longevity of electronic devices.
Benefits:
- Improved impact resistance
- Enhanced durability of display screens
- Longer lifespan of electronic devices
Commercial Applications: The technology could be valuable for manufacturers of consumer electronics looking to improve the durability of their products and reduce the need for screen replacements.
Questions about Display Apparatus with Improved Impact Resistance: 1. How does the inclusion of molybdenum in the first gate layer contribute to the impact resistance of the display apparatus? 2. What specific electronic devices could benefit the most from this technology?
Frequently Updated Research: There may be ongoing research in the field of display technology focusing on improving impact resistance and durability. Researchers and manufacturers may be exploring new materials and techniques to further enhance these properties.
Original Abstract Submitted
a display apparatus with improved impact resistance includes a substrate, a first semiconductor layer disposed on the substrate, a first inorganic insulating layer disposed on the first semiconductor layer, a first gate layer disposed on the first inorganic insulating layer, having a compressive stress of 470 mpa or more and 1,540 mpa or less, and including molybdenum, and a second inorganic insulating layer disposed on the first gate layer.
