Samsung display co., ltd. (20240324349). DISPLAY APPARATUS simplified abstract

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DISPLAY APPARATUS

Organization Name

samsung display co., ltd.

Inventor(s)

Myounggeun Cha of Yongin-si (KR)

Sanggun Choi of Yongin-si (KR)

Keunwoo Kim of Yongin-si (KR)

DISPLAY APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240324349 titled 'DISPLAY APPARATUS

The abstract of the patent application describes a display apparatus that includes transistors, a data line, and a capacitor for controlling the driving current to a display element.

  • The first transistor controls the driving current to the display element and includes a silicon semiconductor layer and a gate electrode.
  • The second transistor, made of an oxide semiconductor layer, connects the data line to the first transistor in response to a scan signal.
  • The first capacitor, with electrodes overlapping, is used for additional control in the display apparatus.

Potential Applications: - This technology can be used in various display devices such as smartphones, tablets, and monitors. - It can also be applied in automotive displays, smart TVs, and wearable technology.

Problems Solved: - Provides precise control over the driving current to the display element. - Enhances the efficiency and performance of display devices.

Benefits: - Improved display quality and energy efficiency. - Enhanced user experience with sharper images and better color accuracy.

Commercial Applications: - This technology can be utilized by display manufacturers to create high-quality and energy-efficient products, gaining a competitive edge in the market.

Questions about the technology: 1. How does the use of oxide semiconductor in the second transistor impact the performance of the display apparatus? 2. What are the potential cost implications of implementing this technology in mass-produced display devices?


Original Abstract Submitted

a display apparatus includes a first transistor including a first semiconductor layer including a silicon semiconductor and a first gate electrode below the first semiconductor layer, where the first transistor controls a magnitude of a driving current flowing to a display element, a data line which transmits a data voltage, a second transistor including a second semiconductor layer including an oxide semiconductor, where the second transistor connects the data line to the first transistor in response to a scan signal, and a first capacitor including a first electrode and a second electrode, where the first electrode is disposed on the first semiconductor layer, and the second electrode at least partially overlaps the first electrode.