Samsung Electronics Co., Ltd. patent applications on September 26th, 2024
Patent Applications by Samsung Electronics Co., Ltd. on September 26th, 2024
Samsung Electronics Co., Ltd.: 331 patent applications
Samsung Electronics Co., Ltd. has applied for patents in the areas of H01L23/00 (36), H01L25/065 (21), H01L23/498 (21), H01L29/423 (20), H10B80/00 (18) H10B43/27 (6), H10B12/482 (5), H01L23/49838 (4), H01L27/088 (4), H01L25/105 (4)
With keywords such as: device, layer, semiconductor, including, substrate, based, structure, data, region, and direction in patent application abstracts.
Patent Applications by Samsung Electronics Co., Ltd.
20240315504. CLEANING DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hun KANG of Suwon-si (KR) for samsung electronics co., ltd., Kihwan KWON of Suwon-si (KR) for samsung electronics co., ltd., Hansaem LEE of Suwon-si (KR) for samsung electronics co., ltd., Dongjun KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeoncheol KIM of Suwon-si (KR) for samsung electronics co., ltd., Jiwon CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A47L9/04, A47L9/28
CPC Code(s): A47L9/0477
Abstract: a cleaning device includes a suction device configured to suck a pollutant into the suction device; a body configured to collect the sucked pollutant, wherein the suction device includes: a drum rotatable around an axis and having a hollow portion, a driving motor disposed in the hollow portion of the drum and configured to apply a rotational force to the drum to rotate the drum around the axis, a rotatable chamber surrounding the driving motor and disposed between the drum and the driving motor, the rotatable chamber rotatable coaxially with the axis and configured to rotate with the drum so that a cooling fluid between the driving motor and the rotatable chamber spirals around the driving motor when the drum is rotated, and a cooling fluid discharge hole at an end of the rotatable chamber to discharge the cooling fluid outside of the rotatable chamber.
Inventor(s): Yeona HWANG of Suwon-si (KR) for samsung electronics co., ltd., Sujin SEONG of Suwon-si (KR) for samsung electronics co., ltd., Kyuho SHIN of Suwon-si (KR) for samsung electronics co., ltd., Byung-In MA of Suwon-si (KR) for samsung electronics co., ltd., Yong Hoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyeongjoon SEO of Suwon-si (KR) for samsung electronics co., ltd., Kisup LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A47L9/28, A47L9/30
CPC Code(s): A47L9/2815
Abstract: the disclosure provides a cleaner and a controlling method thereof. a cleaner according to an embodiment of the disclosure includes a suction part, a suction device which generates airflow such that dust is suctioned through the suction part, a detection device which is arranged on one side of the suction part, and emits a light of a predetermined wavelength, and detects a wavelength of a partial light emitted, and at least one processor which controls the suction device, wherein the at least one processor is configured to control the detection device to emit a light of a predetermined wavelength during an operation of the suction device, and detect whether allergen substances exist in the dust suctioned through the suction part based on a wavelength of a reflective light detected in the detection device.
Inventor(s): Juyong KIM of Yokohama-shi (JP) for samsung electronics co., ltd., Katsunori ARAKI of Yokohama-shi (JP) for samsung electronics co., ltd., Motonari SAKURAI of Yokohama-shi (JP) for samsung electronics co., ltd., Ritsuya YAMAMOTO of Yokohama-shi (JP) for samsung electronics co., ltd., Takaaki KATSUURA of Yokohama-shi (JP) for samsung electronics co., ltd.
IPC Code(s): A47L9/28, A47L11/40
CPC Code(s): A47L9/2826
Abstract: a cleaning robot including a cleaning module; a traveling module to move the cleaning robot on a surface to be cleaned; a light emission unit; an infrared light sensor; a visible light sensor; and at least one processor configured to execute instructions to control the light emission unit to emit infrared light toward a detection region, control the infrared light sensor to receive the emitted infrared light that is reflected from the detection region, control the visible light sensor to receive visible light reflected from the detection region, determine, based on the reflected visible light and an intensity of the reflected infrared light, whether a liquid object is present in the detection region, control, based on determining that the liquid object is present, the traveling module to move the cleaning robot to avoid the liquid object, and control the cleaning module to clean the surface while the cleaning robot moves.
20240315519. CLEANER AND MOP BRUSH HEAD_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Byoungin LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyeoncheol KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeonwoo TAK of Suwon-s (KR) for samsung electronics co., ltd.
IPC Code(s): A47L11/40, A46B5/00, A47L11/282
CPC Code(s): A47L11/4088
Abstract: a cleaner includes a mop brush head whereby cleaning using water is possible, the mop brush head includes a water tank storing water, at least one mop, a sprayer spraying water toward the surface to be cleaned, and a heating module configured to heat water supplied from the water tank, wherein the heating module includes a hot water tank storing water flowing in from the water tank, a heater that heats the water stored in the hot water tank, and a channel structure provided inside the hot water tank so that water in the hot water tank moves along a preset path.
20240315528. DISHWASHER_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Johannes BÜSING of Suwon-si (KR) for samsung electronics co., ltd., Heedong ROH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A47L15/50, A47L15/42
CPC Code(s): A47L15/508
Abstract: a dishwasher may include a tub, a basket inside the tub, and to accommodate objects to wash therein, and the basket including a wire forming the basket, and a duct detachably coupled to the basket to guide washing water to be sprayed into the objects. the duct includes a first fixing protrusion to fix an upper portion of the wire. the duct includes a second fixing protrusion to fix a lower portion of the wire. the second fixing protrusion is spaced apart from the first fixing protrusion along an extension direction of the wire.
Inventor(s): Yujin KO of Suwon-si (KR) for samsung electronics co., ltd., Hyunho YUN of Suwon-si (KR) for samsung electronics co., ltd., Jungsoo KANG of Suwon-si (KR) for samsung electronics co., ltd., Sungmin JANG of Suwon-si (KR) for samsung electronics co., ltd., Hyunmin JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B01D53/26, B01D53/04
CPC Code(s): B01D53/261
Abstract: an air dryer includes a first adsorption tower configured to perform any one of a compressed air dehumidification process and a regeneration process of a first adsorbent provided therein, a second adsorption tower configured to perform a regeneration process of a second adsorbent or alternately perform a compressed air dehumidification process, in response to an operation of the first adsorption tower, and a controller configured to (i) control the operation of the first adsorption tower for the first adsorption tower to perform either the compressed air dehumidification process or the regeneration process of the first adsorbent and (ii) control the operation of the second adsorption tower for the second adsorption tower to perform either the compressed air dehumidification process or the regeneration process of the second adsorbent.
20240317492. DISTRIBUTION STORAGE SYSTEM_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Junhyuk CHANG of Suwon-si (KR) for samsung electronics co., ltd., Seunggyu KANG of Suwon-si (KR) for samsung electronics co., ltd., Hyunjae KANG of Suwon-si (KR) for samsung electronics co., ltd., Sangmin KIM of Suwon-si (KR) for samsung electronics co., ltd., Youngwook KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaesung BYUN of Suwon-si (KR) for samsung electronics co., ltd., Yongjun AHN of Suwon-si (KR) for samsung electronics co., ltd., Sangkyung LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyunwoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Jeonghun LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B65G1/04
CPC Code(s): B65G1/0457
Abstract: a distribution storage system including a wall protruding from a floor in a vertical direction and extending in a first horizontal direction, a plurality of shelves positioned adjacent to a side of the wall and having a space in which carriers are accommodated, an interface port positioned adjacent to a lowermost shelf among the plurality of shelves, a first rail positioned near a ceiling to face the interface port in the vertical direction and extending in the first horizontal direction, a crane moving along the first rail, and a transfer robot coupled to the crane, driven in the vertical direction, and gripping and releasing the carriers, wherein the plurality of shelves are all arranged on one plane.
Inventor(s): Juhui PARK of Suwon-si (KR) for samsung electronics co., ltd., Jongha YUN of Suwon-si (KR) for samsung electronics co., ltd., Younhaeng LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C02F9/00, H01L21/02, H01L21/306
CPC Code(s): C02F9/00
Abstract: disclosed are ultrapure water production systems, semiconductor processing systems, and semiconductor fabrication methods. an ultrapure water production system may include a front filtering part that filters a fluid and a rear filtering part that filters the fluid released from the front filtering part. the rear filtering part may include a uv irradiator that irradiates a uv ray to the fluid to remove an organic material from the fluid, an anp that removes hydrogen peroxide from the fluid released from the uv irradiator, a connection line that connects the uv irradiator to the anp, a hydrogen peroxide detector that is on the connection line and detects a concentration of hydrogen peroxide in the fluid released from the uv irradiator, and a do detector between the hydrogen peroxide detector and the anp to measure a concentration of dissolved oxygen in the fluid released from the uv irradiator.
Inventor(s): Dmitry ANDROSOV of Suwon-si (KR) for samsung electronics co., ltd., Cheol KANG of Suwon-si (KR) for samsung electronics co., ltd., Haengdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun KWAK of Suwon-si (KR) for samsung electronics co., ltd., Beomseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Hana KIM of Suwon-si (KR) for samsung electronics co., ltd., Hoyoon PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C07C69/94, G03F7/038, G03F7/039
CPC Code(s): C07C69/94
Abstract: disclosed are a polycarboxylate compound represented by formula 1 below, a resist composition including the same, and a method of forming a pattern using the same.
Inventor(s): Dmitry ANDROSOV of Suwon-si (KR) for samsung electronics co., ltd., Cheol KANG of Suwon-si (KR) for samsung electronics co., ltd., Haengdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun KWAK of Suwon-si (KR) for samsung electronics co., ltd., Beomseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Hana KIM of Suwon-si (KR) for samsung electronics co., ltd., Hoyoon PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C07C69/94, G03F7/038, G03F7/039
CPC Code(s): C07C69/94
Abstract:
Inventor(s): Dmitry ANDROSOV of Suwon-si (KR) for samsung electronics co., ltd., Cheol KANG of Suwon-si (KR) for samsung electronics co., ltd., Haengdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun KWAK of Suwon-si (KR) for samsung electronics co., ltd., Beomseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Hana KIM of Suwon-si (KR) for samsung electronics co., ltd., Hoyoon PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C07C69/94, G03F7/038, G03F7/039
CPC Code(s): C07C69/94
Abstract: in formula 1, a, x, m11, n11, rand b13 are as described in the specification.
Inventor(s): Kihun JEONG of Suwon-si (KR) for samsung electronics co., ltd., Youngdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Yongchan KIM of Seoul (KR) for samsung electronics co., ltd., Kookjeong SEO of Suwon-si (KR) for samsung electronics co., ltd., Jihun SEO of Seoul (KR) for samsung electronics co., ltd., Jungsoo LIM of Suwon-si (KR) for samsung electronics co., ltd., Changho HAN of Pyeongtaek-si (KR) for samsung electronics co., ltd., Daewon KIM of Seoul (KR) for samsung electronics co., ltd., Jeongwoo ROH of Seoul (KR) for samsung electronics co., ltd., Eunji LEE of Seoul (KR) for samsung electronics co., ltd., Joonbum LEE of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): C09D133/14, C09D5/00, C09D7/61, C09D7/63, C09D133/08, C09D143/02
CPC Code(s): C09D133/14
Abstract: disclosed are an anti-frost hydrogel coating composition including an ionic monomer, a method of forming an anti-frost hydrogel coating film on a substrate, and a heat exchanger including the anti-frost hydrogel coating film, the anti-frost hydrogel coating composition can include: an ionic monomer; a crosslinker including two or more acrylic groups; a polymerization initiator; and a solvent, and the ionic monomer can include at least one ionic monomer from among a zwitterionic monomer, a cationic monomer, and an anionic monomer.
Inventor(s): Yearin Byun of Suwon si (KR) for samsung electronics co., ltd., Eunock Kim of Anseong si (KR) for samsung electronics co., ltd., Suyeong Jung of Anseong si (KR) for samsung electronics co., ltd., Hyungoo Kong of Anseong si (KR) for samsung electronics co., ltd., Inkwon Kim of Suwon si (KR) for samsung electronics co., ltd., Sanghyun Park of Suwon si (KR) for samsung electronics co., ltd.
IPC Code(s): C09G1/02, H01L21/3205, H01L21/321
CPC Code(s): C09G1/02
Abstract: the present disclosure relates to slurry compositions used for chemical mechanical polishing of a metal film. an example slurry composition includes abrasive particles, deionized water, and an oxidizer. the oxidizer includes iodine, and is a temperature-sensitive oxidizer capable of controlling both a static etch rate and a removal rate of the metal film when a polishing temperature during the chemical mechanical polishing is about 5� c. to about 100� c.
Inventor(s): Sanghwa Lee of Suwon-si (KR) for samsung electronics co., ltd., Yearin Byun of Suwon-si (KR) for samsung electronics co., ltd., Inkwon Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C09G1/02, C07F5/00, C09K3/14, H01L21/3105, H01L21/321
CPC Code(s): C09G1/02
Abstract: provided are a method of manufacturing a chemical mechanical polishing slurry and a method of manufacturing a semiconductor device using the same. the method of manufacturing a chemical mechanical polishing slurry includes mixing a first precursor including cerium and a second precursor in an aqueous solution, forming nanoclusters including cerium by a reaction (e.g., a synthesis reaction) between the first precursor and the second precursor, and forming a chemical mechanical polishing slurry by mixing at least one of a ph adjuster, deionized water, an inhibitor, a booster, and a dispersant with the nanoclusters.
Inventor(s): Yearin BYUN of Suwon-si (KR) for samsung electronics co., ltd., Inkwon KIM of Suwon-si (KR) for samsung electronics co., ltd., Sanghyun PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C09G1/04, H01L21/3205, H01L21/321
CPC Code(s): C09G1/04
Abstract: provided is a chemical mechanical polishing slurry used for chemical mechanical polishing of a metal layer. the chemical mechanical polishing slurry may include deionized water, abrasive particles, and an aqueous solution including a temperature-sensitive oxidizing agent configured to control both the static etch rate and removal rate of the metal layer in a chemical mechanical polishing process when the polishing temperature of the chemical mechanical polishing process is 10� c. to 75� c.
Inventor(s): Yearin Byun of Suwon-si (KR) for samsung electronics co., ltd., Jeongwon Lim of Suwon-si (KR) for samsung electronics co., ltd., Boyun Kim of Suwon-si (KR) for samsung electronics co., ltd., Sanghyun Park of Suwon-si (KR) for samsung electronics co., ltd., Seungho Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C09G1/04, H01L21/3205, H01L21/321
CPC Code(s): C09G1/04
Abstract: provided is a chemical mechanical polishing (cmp) slurry composition including an organic booster including an amino acid, a ph adjuster, and inorganic abrasive particles of less than 0.1 weight % with respect to a total weight of the cmp slurry composition, wherein a material constituting a remaining part of the cmp slurry composition is deionized water (diw).
Inventor(s): Kyuyoung HWANG of Suwon-si (KR) for samsung electronics co., ltd., Byungjoon KANG of Suwon-si (KR) for samsung electronics co., ltd., Daihyun KIM of Hwaseong-si (KR) for samsung electronics co., ltd., Sungmin KIM of Suwon-si (KR) for samsung electronics co., ltd., Mihyun PARK of Hwaseong-si (KR) for samsung electronics co., ltd., Jungmin OH of Hwaseong-si (KR) for samsung electronics co., ltd., Cheol HAM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C09K13/00, H01L21/3213
CPC Code(s): C09K13/00
Abstract: an etching composition may include an oxidizer, an ammonium salt, an aqueous solvent, and an accelerator. a method of etching a metal-containing film may be performed using the etching composition, and a method of manufacturing a semiconductor device may be performed using the etching composition.
Inventor(s): Byungjoon KANG of Suwon-si (KR) for samsung electronics co., ltd., Sungmin KIM of Suwon-si (KR) for samsung electronics co., ltd., Minjae SUNG of Hwaseong-si (KR) for samsung electronics co., ltd., Gayoung SONG of Hwaseong-si (KR) for samsung electronics co., ltd., Jungmin OH of Hwaseong-si (KR) for samsung electronics co., ltd., Hyosan LEE of Hwaseong-si (KR) for samsung electronics co., ltd., Byoungki CHOI of Suwon-si (KR) for samsung electronics co., ltd., Cheol HAM of Suwon-si (KR) for samsung electronics co., ltd., Kyuyoung HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C09K13/06, H01L21/3213
CPC Code(s): C09K13/06
Abstract: an etching composition for a titanium-containing layer may include an oxidant, an inorganic acid, and a selective etching inhibitor. the inorganic acid may include phosphorus-based inorganic acid, chlorine-based inorganic acid, or fluorine-based inorganic acid, or any combination thereof. the selective etching inhibitor may include a polymer having a nitrogen-containing repeating unit.
20240318307. SUBSTRATE PROCESSING DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Byunghwan Kong of Suwon-si (KR) for samsung electronics co., ltd., Heesun Song of Suwon-si (KR) for samsung electronics co., ltd., Seongwan Kim of Suwon-si (KR) for samsung electronics co., ltd., Heeyeon Kim of Suwon-si (KR) for samsung electronics co., ltd., Seongho Park of Suwon-si (KR) for samsung electronics co., ltd., Hyunho Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C23C16/44
CPC Code(s): C23C16/4412
Abstract: provided is a substrate processing device including a first tube configured to load a substrate in an interior space thereof, a second tube configured to include the first tube therein, and a process gas supply line configured to inject process gas to the interior space of the first tube, wherein the first tube has a plurality of exhaust holes penetrating a sidewall of the first tube, the plurality of exhaust holes include a main exhaust hole and a multi-exhaust hole region disposed in a line in the vertical direction, the multi-exhaust hole region includes a plurality of auxiliary exhaust holes, and the height of each of the plurality of auxiliary exhaust holes is less than the height of the main exhaust hole.
20240318314. SUBSTRATE SUPPORT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yonjoo KANG of Suwon-si (KR) for samsung electronics co., ltd., Yunjae Lee of Suwon-si (KR) for samsung electronics co., ltd., Junhyung Kim of Suwon-si (KR) for samsung electronics co., ltd., Youngbok Lee of Suwon-si (KR) for samsung electronics co., ltd., Sangchul Han of Suwon-si (KR) for samsung electronics co., ltd., Minsung Kim of Suwon-si (KR) for samsung electronics co., ltd., Inhwan Park of Suwon-si (KR) for samsung electronics co., ltd., Sangyeon Oh of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C23C16/458, C23C16/46
CPC Code(s): C23C16/4586
Abstract: a substrate support device includes a chuck plate, a shaft connected to a center lower end of the chuck plate, a heater unit provided inside the chuck plate, an electrode unit provided inside the chuck plate, and provided on the heater unit, a jumper unit provided inside the chuck plate, arranged between the electrode unit and the heater unit, and electrically connected to the electrode unit to supply power to the electrode unit, and a power control unit, wherein the electrode unit includes a center electrode and a first electrode arranged in a ring shape around the center electrode, wherein the jumper unit includes a first jumper connected to the first electrode and a center jumper connected to the center electrode, and wherein the first jumper includes a first connection jumper, and a first inclined jumper electrically connecting the first jumper.
Inventor(s): Songjae LEE of Suwon-si (KR) for samsung electronics co., ltd., Jungyoon HAHM of Suwon-si (KR) for samsung electronics co., ltd., Jaehoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Minhee KANG of Suwon-si (KR) for samsung electronics co., ltd., Daehwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Donggeun PARK of Suwon-si (KR) for samsung electronics co., ltd., Incheol JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): D06F58/24, D06F58/26
CPC Code(s): D06F58/24
Abstract: a washing machine having a drying function may include: a cabinet; a tub inside the cabinet and having an air outlet; a drying device configured to supply heated air into the tub to be discharged through the air outlet; a duct connecting the air outlet to the drying device to guide the heated air from the tub to the drying device; and a water feed pipe configured to supply water into an upper portion of the duct to cool the heated air so that moisture in the heated air condenses, wherein the duct includes a middle protrusion on a middle of an inner surface of a side of the duct to scatter water supplied into the duct and flowing along the inner surface; and a lower protrusion on the inner surface below the middle protrusion to scatter water flowing along the inner surface downward past the middle protrusion.
Inventor(s): Byunghwan KO of Suwon-si (KR) for samsung electronics co., ltd., Jiwoong CHOI of Suwon-si (KR) for samsung electronics co., ltd., Heejoon KANG of Suwon-si (KR) for samsung electronics co., ltd., Younghoon WOO of Suwon-si (KR) for samsung electronics co., ltd., Myoungjin HAM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F24C7/08, F24C15/10
CPC Code(s): F24C7/083
Abstract: provided is a cooking device capable of simultaneously controlling a plurality of power units without noise. in particular, provided is a cooking device for determining one operating frequency, based on operating frequencies of the plurality of power units overlapped on a location where a container is placed, and controlling an operation of a power unit by using the determined operating frequency.
20240318830. OVEN_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jaewan HONG of Suwon-si (KR) for samsung electronics co., ltd., Byoungwoo KO of Suwon-si (KR) for samsung electronics co., ltd., Kyounghoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Hojin LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F24C15/20, F24C15/00
CPC Code(s): F24C15/2007
Abstract: an oven including an inner cabinet forming a cooking chamber; an outer cabinet, to surround the inner cabinet so as to form a cooling passage through which external air passes; an air exhaust apparatus between the outer cabinet and the inner cabinet; a filter arrangeable on the upper side of the inner cabinet such that air from the cooking chamber passes through to the filter; a pressure regulating duct arrangeable on the upper side of the inner cabinet such that air having passed through the filter passes toward the cooling passage; a sensing pipe, arrangeable in the air exhaust apparatus, on the upper side of the filter such that air from the filter passes through a space above the filter and the cooling passage; and a steam sensor, arrangeable in the sensing pipe and measuring the amount of steam contained in the air passing through the sensing pipe.
Inventor(s): Hyoshin LEE of Suwon-si (KR) for samsung electronics co., ltd., Chiwook GU of Suwon-si (KR) for samsung electronics co., ltd., Hongseok JUN of Suwon-si (KR) for samsung electronics co., ltd., Taewoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Jun HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F24F11/64, F24F11/65, F24F11/86, F24F110/10
CPC Code(s): F24F11/64
Abstract: disclosed are an air conditioner and a method for controlling the air conditioner. the air conditioner according to the present disclosure comprises: a fan; a compressor; a temperature sensor; and at least one processor, comprising processing circuitry, individually and/or collectively, configured to control the air conditioner to: turn on the compressor to cool air, discharge the cooled air to the outside of the air conditioner by driving an indoor fan based on an airflow mode among a plurality of airflow modes, correct a set temperature of the air conditioner based on a correction value corresponding to the airflow mode, and based on the temperature sensed by the temperature sensor matching the corrected set temperature, turn off the compressor in a state in which the driving of the indoor fan is maintained.
20240318879. HEAT PUMP SYSTEM_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Soonjae PYO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F25B30/02, F25B5/02, F25B41/20, F25B41/31, F25D21/12
CPC Code(s): F25B30/02
Abstract: a heat pump system in which a heat source is air, and may include: a compressor configured to compress a refrigerant, a first heat exchanger configured to exchange heat between the refrigerant and air, a second heat exchanger configured to exchange heat between the refrigerant and water, a first refrigerant pipe configured to discharge the refrigerant heat exchanged in the first heat exchanger during a defrosting operation for the first heat exchanger, and a second refrigerant pipe configured to guide the refrigerant from the first refrigerant pipe to the second heat exchanger. the heat pump system may further include: a third refrigerant pipe configured to discharge the refrigerant heat exchanged in the second heat exchanger after flowing into the second heat exchanger through the second refrigerant pipe, a first water pipe configured to supply water to be heat exchanged in the second heat exchanger, a second water pipe configured to return the water heat exchanged in the second heat exchanger, a bypass pipe connecting the first refrigerant pipe and the third refrigerant pipe and configured to bypass the second heat exchanger, and a third heat exchanger configured to heat exchange the refrigerant guided by the bypass pipe with the water flowing in the second water pipe, during the defrosting operation.
20240318896. REFRIGERATOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Wonho JANG of Suwon-si (KR) for samsung electronics co., ltd., Inyong HWANG of Suwon-si (KR) for samsung electronics co., ltd., Jonghoon OH of Suwon-si (KR) for samsung electronics co., ltd., Chulhee KIM of Suwon-si (KR) for samsung electronics co., ltd., Subin YUN of Suwon-si (KR) for samsung electronics co., ltd., Seongchan LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F25D23/02
CPC Code(s): F25D23/028
Abstract: a refrigerator includes an outer case, an inner case forming a storage compartment and including a guide receiving space, and a guide mounting groove, an insulation between the outer and inner cases, a first door rotatably coupled to the outer case to cover a portion of the storage compartment, a second door rotatably coupled to the outer case to cover another portion of the storage compartment, a bar rotatable with one of the first and second doors and cover a gap between the first and second doors, and a rotation guide disposed on an upper portion of the storage compartment to guide the bar to allow rotation of the bar in response to opening or closing of the first or second door and including a guide body partially accommodated in the guide receiving space and a protrusion inserted into the guide mounting groove to prevent movement of the rotation guide.
20240318900. REFRIGERATOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yonghyun KANG of Suwon-si (KR) for samsung electronics co., ltd., Donghwa KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyoseok NOH of Suwon-si (KR) for samsung electronics co., ltd., Sungcheul PARK of Suwon-si (KR) for samsung electronics co., ltd., Seungmin LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F25D23/06
CPC Code(s): F25D23/064
Abstract: a refrigerator including: an inner case forming a storage compartment with an open front side and comprising a plurality of plates formed by injection molding; an outer case coupled to an outside of the inner case; and an insulation material between the inner case and the outer case. the plurality of plates includes an upper plate and a plurality of lateral plates coupled to the upper plate. the upper plate includes an upper plate body and an upper plate coupler. the each of the plurality of lateral plates includes a lateral plate body and a lateral plate coupler. the upper plate coupler includes an upward extension portion extending upward from the upper plate body and spaced from the lateral plate body. the inner case includes a groove recessed upward extending in a front and rear direction between the upward extension portion and the lateral plate body.
20240319008. DATA OUTPUT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yun Jae SUH of Suwon-si (KR) for samsung electronics co., ltd., Sung Ho KIM of Yongin-si (KR) for samsung electronics co., ltd., Jun Seok KIM of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01J1/44, G01J1/02, G01J1/18, H03F3/45
CPC Code(s): G01J1/44
Abstract: a data output device is provided. the data output device includes a converter circuit configured to generate a conversion signal based on an output signal; a boosting circuit configured to generate a boosting signal based on the output signal; and an output circuit configured to generate the output signal based on an input signal and a feedback signal, the feedback signal being based on the conversion signal and the boosting signal.
Inventor(s): Chunghyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Cheolkyu LIM of Cheonan-si (KR) for samsung electronics co., ltd., Byungwook JEONG of Cheonan-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01R1/067, G01R1/073, G01R31/28
CPC Code(s): G01R1/06794
Abstract: a wafer testing apparatus includes a probe board disposed above a chamber, a wafer chuck disposed below the probe board and configured to support the wafer, a camera located between the probe board and the wafer chuck and configured to capture images of probe imaging points arranged on a lower surface of the probe board and wafer imaging points arranged on an upper surface of the wafer, and a controller electrically connected to the camera and configured to adjust a tilt of the probe board on the basis of image information acquired by the camera. the probe imaging points include a plurality of probe outer imaging points arranged in a rhombic pattern on the lower surface of the probe board, and the wafer imaging points include a plurality of wafer outer imaging points arranged in a rhombic pattern on the upper surface of the wafer.
Inventor(s): Minseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Taesin KWAG of Suwon-si (KR) for samsung electronics co., ltd., Yeonjeong KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyungkeun YOO of Suwon-si (KR) for samsung electronics co., ltd., Jongchul KIM of Suwon-si (KR) for samsung electronics co., ltd., Kyunghoon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01R31/28, G06F30/367, G06T7/00
CPC Code(s): G01R31/2831
Abstract: provided is an electrical reliability properties prediction method including generating a plurality of pieces of optical spectrum data of a substrate, performing a wafer level reliability (wlr) process on the substrate, measuring electrical reliability property data based on the wlr process, matching an inspection region to the plurality of pieces of optical spectrum data and the electrical reliability property data, generating a data set, performing data pre-processing, training an electrical reliability properties prediction model, acquiring a plurality of pieces of target optical data from a database, and extracting, with respect to the plurality of pieces of target optical data, a feature vector from the plurality of pieces of target optical data, and detecting predicted electrical reliability property data of the plurality of pieces of target optical data based on the feature vector.
Inventor(s): Seongkwan LEE of Suwon-si (KR) for samsung electronics co., ltd., Junyeon WON of Suwon-si (KR) for samsung electronics co., ltd., Minho KANG of Suwon-si (KR) for samsung electronics co., ltd., Cheolmin PARK of Suwon-si (KR) for samsung electronics co., ltd., Jaemoo CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01R31/28
CPC Code(s): G01R31/2896
Abstract: a test device for testing a semiconductor, the test device comprising: a pulse signal generator that is configured to generate a first pulse signal and transmit the first pulse signal through channels; a sampler that is configured to receive the first pulse signal through the channels and conduct a sampling process on the first pulse signal, based on a second pulse signal; a width analyzer that is configured to measure a first width of the first pulse signal and generate a first measurement value, based on a result of the sampling process; and a calculator that is configured to output a test result corresponding to each of the channels of the test device, based on the first measurement value.
Inventor(s): Daeyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Myoungoh KI of Suwon-si (KR) for samsung electronics co., ltd., Jonghan Ahn of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01S17/26, G01S7/4863, G01S7/4865, G01S17/894, G06F1/06
CPC Code(s): G01S17/26
Abstract: an image sensor for measuring a depth of an object disposed in an unambiguous range is provided. the image sensor includes: a modulation clock generating circuit configured to generate n modulation clock signals respectively having n phases; a demodulation clock generating circuit configured to generate n demodulation clock signals respectively having n phases respectively corresponding to the n modulation clock signals; a phase selection circuit configured to select one modulation clock signal from among the n modulation clock signals to output as a pre-modulation signal, based on a random number, and select, from among the n demodulation clock signals, and output as n pre-demodulation signals corresponding to the pre-modulation signal, based on the random number; and a time gating circuit configured to control a time at which the pre-modulation signal and the n pre-demodulation signals are applied, based on the unambiguous range.
20240319454. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Junghoon Kang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02B6/42, H01L23/00, H01L23/498, H01L25/065
CPC Code(s): G02B6/4219
Abstract: provided is a semiconductor package including a printed circuit board including a cavity extending inward from an upper surface thereof, an optical waveguide extending onto the cavity along the upper surface of the printed circuit board, a first semiconductor chip positioned inside the cavity and including a photonic integrated circuit overlapping a portion of the optical waveguide in a vertical direction, an interposer on the first semiconductor chip, and a second semiconductor chip on the interposer.
Inventor(s): Kyeongeun LEE of Suwon-si (KR) for samsung electronics co., ltd., Sunggoo HER of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02B7/02
CPC Code(s): G02B7/022
Abstract: a camera assembly may include: a first camera module including a first optical component comprising a lens, a first camera housing configured to carry the first optical component, and a first coupling part comprising a hole or a boss positioned in the first camera housing; and a second camera module including a second optical component comprising a lens, a second camera housing configured to carry the second optical component, and a second coupling part comprising a hole or a boss positioned in the second camera housing and configured to be coupled to the first coupling part.
20240319500. FACE COVER_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jonggyu PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02B27/01
CPC Code(s): G02B27/0149
Abstract: a face cover detachably coupled to a head-mounted display apparatus that includes a lens and a lens barrel configured to surround the lens and adjust positions of the lens is provided. the face cover includes a housing including an opening formed in an area thereof, a lens adjustment member disposed in the opening so that at least a portion thereof is exposed through the opening, and an elastic member that includes opposite ends arranged in the housing and a central portion thereof coupled to the lens adjustment member, and is configured to provide an elastic force so as to allow the lens adjustment member to move in a first direction or in a second direction opposite to the first direction. in case that an external force is applied to the lens adjustment member in the first direction, the lens adjustment member is configured to be moved in the first direction such that the lens adjustment member come into contact with the lens barrel. and in case that the lens adjustment member rotates in a first rotation direction in a state where the lens adjustment member and the lens barrel is in contact with each other, the lens barrel is configured to rotate in a second rotation direction opposite to the first rotation direction such that a diopter of the lens is adjusted.
[[20240319580. PROCESS PROXIMITY CORRECTION METHOD BASED ON MACHINE LEARNING, OPTICAL PROXIMITY CORRECTION METHOD INCLUDING THE SAME, AND METHOD OF MANUFACTURING MASK BY USING THE PROCESS PROXIMITY CORRECTION METHOD_simplified_abstract_(samsung electronics co., ltd.)]]
Inventor(s): Jaeyong Jeong of Suwon-si (KR) for samsung electronics co., ltd., Bonhyun Gu of Suwon-si (KR) for samsung electronics co., ltd., Sooyong Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F1/36, G03F1/84
CPC Code(s): G03F1/36
Abstract: the present disclosure relates to process proximity correction (ppc) methods based on machine learning (ml), optical proximity correction (opc) methods, and mask manufacturing methods including the ppc methods. one example ppc method based on ml includes obtaining a pattern gauge-based bottom critical dimension (cd) and obtaining pattern gauge-based features from a first layout, performing a gauge clustering operation of grouping and classifying pattern gauges including similar features, calculating distribution parameters in a skew-normal distribution of the pattern gauge-based bottom cd in each cluster, performing ml between the distribution parameters and a feature in each cluster to generate a prediction ml model, predicting a distribution, a maximum limit, and a minimum limit of the pattern gauge-based bottom cd by using the prediction ml model, generating an after cleaning inspection (aci) target including a maximum process window, and generating a second layout by performing an development inspection (adi) retarget operation.
Inventor(s): Changheon LEE of Suwon-si (KR) for samsung electronics co., ltd., Haengdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun KWAK of Suwon-si (KR) for samsung electronics co., ltd., Mijeong KIM of Suwon-si (KR) for samsung electronics co., ltd., Sunyoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun IM of Suwon-si (KR) for samsung electronics co., ltd., Jinwon JEON of Suwon-si (KR) for samsung electronics co., ltd., Jungha CHAE of Suwon-si (KR) for samsung electronics co., ltd., Sunghyun HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/004, G03F7/038
CPC Code(s): G03F7/0042
Abstract: provided are a resist composition and a method of forming a pattern using the same, wherein the resist composition may include an organometallic compound represented by formula 1 below, and a polymer including a repeating unit represented by formula 2 below.
Inventor(s): Changheon LEE of Suwon-si (KR) for samsung electronics co., ltd., Haengdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun KWAK of Suwon-si (KR) for samsung electronics co., ltd., Mijeong KIM of Suwon-si (KR) for samsung electronics co., ltd., Sunyoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun IM of Suwon-si (KR) for samsung electronics co., ltd., Jinwon JEON of Suwon-si (KR) for samsung electronics co., ltd., Jungha CHAE of Suwon-si (KR) for samsung electronics co., ltd., Sunghyun HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/004, G03F7/038
CPC Code(s): G03F7/0042
Abstract:
Inventor(s): Changheon LEE of Suwon-si (KR) for samsung electronics co., ltd., Haengdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun KWAK of Suwon-si (KR) for samsung electronics co., ltd., Mijeong KIM of Suwon-si (KR) for samsung electronics co., ltd., Sunyoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun IM of Suwon-si (KR) for samsung electronics co., ltd., Jinwon JEON of Suwon-si (KR) for samsung electronics co., ltd., Jungha CHAE of Suwon-si (KR) for samsung electronics co., ltd., Sunghyun HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/004, G03F7/038
CPC Code(s): G03F7/0042
Abstract: for a description of m, r, r, n, a, lto l, ato a23, rto r, b22, and p in formula 1 and formula 2, the specification is referred to.
Inventor(s): Yool Kang of Suwon-si (KR) for samsung electronics co., ltd., Taehui Kwon of Suwon-si (KR) for samsung electronics co., ltd., Dongjun Kim of Suwon-si (KR) for samsung electronics co., ltd., Ahram Suh of Suwon-si (KR) for samsung electronics co., ltd., Miyeon Jung of Suwon-si (KR) for samsung electronics co., ltd., Samjong Choi of Suwon-si (KR) for samsung electronics co., ltd., Ohhwan Kweon of Hwaseong-si (KR) for samsung electronics co., ltd., Minki Kim of Hwaseong-si (KR) for samsung electronics co., ltd., Jaehyun Kim of Hwaseong-si (KR) for samsung electronics co., ltd., Sunggun Shin of Hwaseong-si (KR) for samsung electronics co., ltd., Seungryul Yoo of Hwaseong-si (KR) for samsung electronics co., ltd., Heekyung Lee of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/004, G03F7/20
CPC Code(s): G03F7/0048
Abstract: provided are a thinner composition, which may be generally used for an extreme ultraviolet (euv) photoresist as well as krf and arf photoresists and exhibits improved performance in reduced resist coating (rrc) and edge bead removal (ebr), and which has an excellent pipe cleaning capability, and a method of treating a substrate surface by using the thinner composition. the thinner composition includes a c2-c4 alkylene glycol c1-c4 alkyl ether acetate, a c2-c3 alkylene glycol c1-c4 alkyl ether, and a cycloketone.
Inventor(s): Chanjae AHN of Suwon-si (KR) for samsung electronics co., ltd., Cheol KANG of Suwon-si (KR) for samsung electronics co., ltd., Minsang KIM of Suwon-si (KR) for samsung electronics co., ltd., Beomseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Changki KIM of Suwon-si (KR) for samsung electronics co., ltd., Hana KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeran KIM of Suwon-si (KR) for samsung electronics co., ltd., Changheon LEE of Suwon-si (KR) for samsung electronics co., ltd., Sungwon CHOI of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok CHOI of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/039, C08F212/14, C08F220/18, G03F7/038
CPC Code(s): G03F7/039
Abstract: provided are a resist composition and a pattern forming method using the same. the resist composition includes a polymer including a first repeating unit repeating unit formula 1, a photoacid generator, and an organic solvent.
Inventor(s): Chanjae AHN of Suwon-si (KR) for samsung electronics co., ltd., Cheol KANG of Suwon-si (KR) for samsung electronics co., ltd., Minsang KIM of Suwon-si (KR) for samsung electronics co., ltd., Beomseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Changki KIM of Suwon-si (KR) for samsung electronics co., ltd., Hana KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeran KIM of Suwon-si (KR) for samsung electronics co., ltd., Changheon LEE of Suwon-si (KR) for samsung electronics co., ltd., Sungwon CHOI of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok CHOI of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/039, C08F212/14, C08F220/18, G03F7/038
CPC Code(s): G03F7/039
Abstract:
Inventor(s): Chanjae AHN of Suwon-si (KR) for samsung electronics co., ltd., Cheol KANG of Suwon-si (KR) for samsung electronics co., ltd., Minsang KIM of Suwon-si (KR) for samsung electronics co., ltd., Beomseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Changki KIM of Suwon-si (KR) for samsung electronics co., ltd., Hana KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeran KIM of Suwon-si (KR) for samsung electronics co., ltd., Changheon LEE of Suwon-si (KR) for samsung electronics co., ltd., Sungwon CHOI of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok CHOI of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/039, C08F212/14, C08F220/18, G03F7/038
CPC Code(s): G03F7/039
Abstract: in formula 1, lto l, ato a, ato a, rto r, bto b, and p are the same as described in the detailed description.
Inventor(s): Hoyoon PARK of Suwon-si (KR) for samsung electronics co., ltd., Haengdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun KWAK of Suwon-si (KR) for samsung electronics co., ltd., Minsang KIM of Suwon-si (KR) for samsung electronics co., ltd., Beomseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Hana KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeran KIM of Suwon-si (KR) for samsung electronics co., ltd., Chanjae AHN of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun IM of Suwon-si (KR) for samsung electronics co., ltd., Sungwon CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/039
CPC Code(s): G03F7/039
Abstract: provided are a photoreactive polymer compound including a first repeating unit represented by formula 1 below, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition:
Inventor(s): Hoyoon PARK of Suwon-si (KR) for samsung electronics co., ltd., Haengdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun KWAK of Suwon-si (KR) for samsung electronics co., ltd., Minsang KIM of Suwon-si (KR) for samsung electronics co., ltd., Beomseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Hana KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeran KIM of Suwon-si (KR) for samsung electronics co., ltd., Chanjae AHN of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun IM of Suwon-si (KR) for samsung electronics co., ltd., Sungwon CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/039
CPC Code(s): G03F7/039
Abstract:
Inventor(s): Hoyoon PARK of Suwon-si (KR) for samsung electronics co., ltd., Haengdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun KWAK of Suwon-si (KR) for samsung electronics co., ltd., Minsang KIM of Suwon-si (KR) for samsung electronics co., ltd., Beomseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Hana KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeran KIM of Suwon-si (KR) for samsung electronics co., ltd., Chanjae AHN of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun IM of Suwon-si (KR) for samsung electronics co., ltd., Sungwon CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/039
CPC Code(s): G03F7/039
Abstract: a description of formula 1 is provided herein.
Inventor(s): Shubham Raj SINGH of Bengaluru (IN) for samsung electronics co., ltd., Ravindra Kumar SINGH of Bengaluru (IN) for samsung electronics co., ltd., Subodh Prakash TAIGOR of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): G05F1/567, G05F1/46, G05F3/26
CPC Code(s): G05F1/567
Abstract: embodiments herein disclose a compensation circuit including an opamp having an input connected to a node between one end of a first resistor and a drain of a first pmos. a fifth pmos includes a drain connected to a drain of a second nmos and a gate of sixth pmos. a gate of second nmos is connected to a node between a drain of fourth pmos and one end of third resistor. the sixth pmos includes a drain connected to one end of fifth resistor and another end of fifth resistor connected to a node between a gate of third nmos and a gate of a fourth nmos. a seventh pmos includes a drain connected to a node between another end of the second resistor and third diode.
Inventor(s): Jaeyoung Lee of Suwon-si (KR) for samsung electronics co., ltd., Byungsu Kim of Suwon-si (KR) for samsung electronics co., ltd., Youngsan Kim of Suwon-si (KR) for samsung electronics co., ltd., Jaegon Lee of Suwon-si (KR) for samsung electronics co., ltd., Jaehoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Byeongho Lee of Suwon-si (KR) for samsung electronics co., ltd., Jongjin Lee of Suwon-si (KR) for samsung electronics co., ltd., Wookyeong Jeong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F1/08, H01L23/00, H01L23/498, H01L25/10, H03K5/133, H03K5/1534
CPC Code(s): G06F1/08
Abstract: a semiconductor device includes an intellectual property (ip) block configured to operate based on a first clock signal and a power voltage, a clock gating circuit configured to operate based on the power voltage, and generate the first clock signal by selectively performing clock gating on a second clock signal based on an enable signal, and a critical path monitor (cpm) configured to generate a digital code having a value, which varies according to a voltage drop of the power voltage, and activate the enable signal based on a comparison of the value of the digital code with a reference value.
Inventor(s): Huiling WU of Jiangsu Province (CN) for samsung electronics co., ltd., Yong Peng of Jiangsu Province (CN) for samsung electronics co., ltd.
IPC Code(s): G06F1/3218, G06F1/28
CPC Code(s): G06F1/3218
Abstract: disclosed are a mobile terminal and a power consumption detection method of the mobile terminal, the mobile terminal including: a power consumption measurement circuit; an application processor configured to transmit a detection command for detecting power consumption data respectively corresponding to at least one hardware module of a plurality of hardware modules of the mobile terminal; and a microprocessor configured to acquire the power consumption data corresponding to the at least one hardware module through the power consumption measurement circuit, based on the detection command received from the application processor.
Inventor(s): Kwonchon KWAK of Suwon-si (KR) for samsung electronics co., ltd., Wookwang LEE of Suwon-si (KR) for samsung electronics co., ltd., Jinyoung AHN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F1/3296, G06F1/3287, H02J7/00
CPC Code(s): G06F1/3296
Abstract: an electronic device is provided. the electronic device includes a battery that supplies power to the electronic device, a power management integrated circuit (pmic) which controls power required in the electronic device, a software battery charging management circuit that performs a charging management function of the battery, a software power saving management circuit that manages standby power of a plurality of circuits in the electronic device, memory storing one or more computer programs, and one or more processors communicatively coupled to the battery, the pmic, the software battery charging management circuit, and software power saving management circuit, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors, cause the electronic device to, in response to identifying that a charger is connected to the electronic device, boot a system of the electronic device, control at least one circuit in the electronic device to operate in a sleep state for power saving by using the software power saving management circuit, charge the battery while the system of the electronic device is in an off state, in response to identifying that a charging state of the battery is not a fully charged state, charge the battery with a first voltage and/or a first current, in response to identifying that the charging state of the battery is the fully charged state, block power supply to the battery, and control power to be supplied circuit with a second voltage set lower than the first voltage and/or a second current set lower than the first current to at least one circuit in the electronic device, wherein the software battery charging management circuit and/or software power saving management circuit are/is implemented on the one or more processors.
Inventor(s): Hoichul JUNG of Suwon-si (KR) for samsung electronics co., ltd., Soonil LIM of Suwon-si (KR) for samsung electronics co., ltd., Sunghwan CHOI of Suwon-si (KR) for samsung electronics co., ltd., Seunghyun HA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/0482, A47J36/32, G06F3/04847
CPC Code(s): G06F3/0482
Abstract: an electronic apparatus and guide method for providing a guidance about a recipe are provided. an electronic apparatus sends a request, according to reception of a user input of inputting a first cooking element, a second cooking element, and a cooking element type, a server for at least one recommended cooking element related to the first cooking element and the second cooking element among a plurality of cooking elements belonging to the cooking element type, receive at least one recommended cooking element set as being associated with the cooking element type, display identification information of the at least one recommended cooking element according to a recommendation order, receive a user input of selecting one of the at least one recommended cooking element as a third cooking element, and store the selected third cooking element as recipe information together with the first cooking element and the second cooking element.
Inventor(s): Kawon CHEON of Suwon-si (KR) for samsung electronics co., ltd., Yeojun Yoon of Suwon-si (KR) for samsung electronics co., ltd., Soojung Lee of Suwon-si (KR) for samsung electronics co., ltd., Jooho Seo of Suwon-si (KR) for samsung electronics co., ltd., Seungjoon Lee of Suwon-si (KR) for samsung electronics co., ltd., Jaehyuk Lee of Suwon-si (KR) for samsung electronics co., ltd., Doughun kim of Suwon-si (KR) for samsung electronics co., ltd., Minsoo Kim of Suwon-si (KR) for samsung electronics co., ltd., Seonkeun Park of Suwon-si (KR) for samsung electronics co., ltd., Jaewoong Chung of Suwon-si (KR) for samsung electronics co., ltd., Duyeong Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/04845, G06F1/16, G06F3/0488
CPC Code(s): G06F3/04845
Abstract: an electronic device includes a housing; a flexible display at least partially exposed to an outside through the housing; and at least one processor operatively connected to the flexible display, wherein the at least one processor is configured to: based on receiving a first user input on the flexible display for a sliding operation to expose a second part including at least part of a first part of the flexible display to the outside in a state in which the first part of the flexible display is exposed to the outside, identify an edge area of the flexible display to be slid, control the flexible display to display an indicator in at least part of an area of the first part of the flexible display corresponding to the edge area of the flexible display, and expose the second part to the outside by sliding at least part of the flexible display including the edge area after the indicator is displayed.
Inventor(s): Hyunwoo YOO of Suwon-si (KR) for samsung electronics co., ltd., Sangwon Shim of Suwon-si (KR) for samsung electronics co., ltd., Eunji Ahn of Suwon-si (KR) for samsung electronics co., ltd., Jaemyoung Lee of Suwon-si (KR) for samsung electronics co., ltd., Minkoo Kang of Suwon-si (KR) for samsung electronics co., ltd., Changkeun Kim of Suwon-si (KR) for samsung electronics co., ltd., Donggun Park of Suwon-si (KR) for samsung electronics co., ltd., Woonggi Shin of Suwon-si (KR) for samsung electronics co., ltd., Younghak Oh of Suwon-si (KR) for samsung electronics co., ltd., Yonggu Lee of Suwon-si (KR) for samsung electronics co., ltd., Eunah Jang of Suwon-si (KR) for samsung electronics co., ltd., Jungwoo Choi of Suwon-si (KR) for samsung electronics co., ltd., Yong Kwon of Suwon-si (KR) for samsung electronics co., ltd., Hyejin Sim of Suwon-si (KR) for samsung electronics co., ltd., Seockhyun Yu of Suwon-si (KR) for samsung electronics co., ltd., Heekyung Jeon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/0488, G06F3/0481, G06F3/04845, G06F3/04847
CPC Code(s): G06F3/0488
Abstract: an electronic device is provided. the electronic device includes: a touch display; and a processor configured to: control the touch display to display a first graphic affordance; control the display to replace, based on an input indicating the first graphic affordance, display of the first graphic affordance with a second graphic affordance; control the display to deform the second graphic affordance according to an action of a user while the input is maintained; and execute a function matched to the first graphic affordance based on a moving distance of the input and whether the input is maintained.
Inventor(s): Jinhyun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0604
Abstract: an electronic device is provided. the electronic host includes: a host; a memory package including a plurality of memory devices and a first accelerator circuit configured to receive first data from the plurality of memory devices and perform a coarse acceleration operation based on the first data to obtain second data; and a memory controller including a second accelerator circuit configured to receive the second data from the first accelerator circuit and perform a fine acceleration operation based on a neural network and the second data to obtain an inference result.
Inventor(s): SUYONG KIM of Suwon-si (KR) for samsung electronics co., ltd., ILHAN PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0608
Abstract: a memory device includes a first memory cell array and a second memory cell array, a first page buffer and a second page buffer configured to read data from the first memory cell array and the second memory cell array, respectively; and a first compression circuit configured to compress first soft decision data into first compressed data by encoding a location of a bit having a first value among bits of the first soft decision data, the first soft decision data being obtained from the first memory cell array by using a plurality of soft read voltages, wherein the first compression circuit is further configured to compress the first soft decision data into the first compressed data while second hard decision data is being output, the second hard decision data being read from the second memory cell array by using a hard read voltage.
Inventor(s): Changho CHOI of Suwon-si (KR) for samsung electronics co., ltd., Young Bong KIM of Suwon-si (KR) for samsung electronics co., ltd., Eun-Kyung CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0613
Abstract: in a method of operating a memory system disclosed, whether a first condition is satisfied is determined. the first condition is associated with free blocks and garbage collection (gc) target blocks from among a plurality of memory blocks. in response to the first condition being satisfied, a size of a data sample associated with executions of a host input/output request and gc is adjusted. the data sample is generated based on the adjusted size of the data sample. the data sample includes a downscaled current valid page count (vpc) ratio and the first number of previous host input/output request to gc processing ratios. a current host input/output request to gc processing ratio is calculated based on the data sample. the host input/output request and the gc are performed based on the current host input/output request to gc processing ratio.
Inventor(s): Jaigyun LIM of Suwon-si (KR) for samsung electronics co., ltd., Jin-Hee MA of Suwon-si (KR) for samsung electronics co., ltd., Kyuho SON of Suwon-si (KR) for samsung electronics co., ltd., Sangyoon OH of Suwon-si (KR) for samsung electronics co., ltd., Wonchul LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0619
Abstract: disclosed is a storage system which includes a random access memory, storage devices, and a processing unit that controls the random access memory and the storage devices. each of the plurality of storage devices includes a first storage area and a second storage area. the processing unit assigns a zone to the first storage areas of the storage devices. the processing unit assigns raid stripes to the zone, performs a write of sequential data, which are based on sequential logical addresses, with respect to each of the raid stripes, and performs a write of a parity corresponding to the write of the sequential data after the write of the sequential data is completed. the processing unit writes an intermediate parity corresponding to the parity in the second storage area of at least one storage device among the storage devices while performing the write of the sequential data.
Inventor(s): MINKYEONG LEE of Suwon-si (KR) for samsung electronics co., ltd., JAESUB KIM of Suwon-si (KR) for samsung electronics co., ltd., JUNHO KIM of Suwon-si (KR) for samsung electronics co., ltd., YANGWOO ROH of Suwon-si (KR) for samsung electronics co., ltd., YOUKUN SHIN of Suwon-si (KR) for samsung electronics co., ltd., DONGHEE LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0659
Abstract: a method of operating a storage controller which communicates with a host device and a non-volatile memory device is provided. the method includes: receiving a first command from the host device indicating a read operation of first status information of a first zone random write area (zrwa) in a first zone region, wherein the first command complies with a zoned namespace (zns) standard; obtaining the first status information from a zone status table in the storage controller based on the first command, wherein the first status information indicates at least a portion of a first physical region of the non-volatile memory device corresponding to the first zrwa in which first data are stored; and providing the first status information to the host device.
Inventor(s): Jongin LEE of Suwon-si (KR) for samsung electronics co., ltd., Sehyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Minjoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Geumrae BAE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/14, G06T7/00, H04L67/01
CPC Code(s): G06F3/14
Abstract: a display apparatus, including: a display; a communicator; at least one processor; and a memory configured to store one or more instructions which, when executed by the at least one processor, cause the display apparatus to: transmit, to an electronic device, a request for remote connection for receiving content; receive, from the electronic device, information about a protocol determined based on a type of the content; arrange a pipeline configured to process the content, based on the information about the protocol; and output, using the pipeline, the content received from the electronic device according to the protocol.
Inventor(s): Younglok LEE of Suwon-si (KR) for samsung electronics co., ltd., Bongkyu KIM of Suwon-si (KR) for samsung electronics co., ltd., Myeongseok LEE of Suwon-si (KR) for samsung electronics co., ltd., Sanghun LEE of Suwon-si (KR) for samsung electronics co., ltd., Saetbyeol LEE of Suwon-si (KR) for samsung electronics co., ltd., Seungbum LEE of Suwon-si (KR) for samsung electronics co., ltd., Suji JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/14, G06F3/0482, G06F3/0484
CPC Code(s): G06F3/1423
Abstract: an electronic device is provided. the electronic device includes a display, a communication circuitry, memory storing one or more computer programs, and one or more processors communicatively coupled to the display, the communication circuitry, and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors, cause the electronic device to connect to an external display device, display a first screen on the display, transmit, to the external display device, first data related to a second screen differing from the first screen, display a third screen corresponding to the second screen, on at least a portion of the first screen, and, in response to a touch input on the third screen, transmit updated second screen-related second data to the external display device via the communication circuitry.
Inventor(s): Kiock SHIN of Suwon-si (KR) for samsung electronics co., ltd., Jaemoon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/14, G09F9/302
CPC Code(s): G06F3/1446
Abstract: a display device included in a modular display device including a plurality of display devices, the display device including: a plurality of communication interfaces; and at least one processor configured to: identify, based on a first signal transmitted by a main control box being received through a first communication interface from among the plurality of communication interfaces, the first communication interface as having received the first signal along a main connection path, control remaining communication interfaces among the plurality of communication interfaces to output the first signal, and identify, based on a second signal transmitted by a sub control box being received through a second communication interface among the plurality of communication interfaces, the second communication interface as having received the second signal along a sub connection path.
Inventor(s): Ihor VASYLTSOV of Suwon-si (KR) for samsung electronics co., ltd., Wooseok Chang of Seoul (KR) for samsung electronics co., ltd., Youngnam Hwang of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F7/498, G06F1/03, G06F17/10
CPC Code(s): G06F7/4988
Abstract: a processor-implemented data processing method includes: normalizing input data of an activation function comprising a division operation; determining dividend data corresponding to a dividend of the division operation by reading, from a memory, a value of a first lookup table addressed by the normalized input data; determining divisor data corresponding to a divisor of the division operation by accumulating the dividend data; and determining output data of the activation function corresponding to an output of the division operation obtained by reading, from the memory, a value of a second lookup table addressed by the dividend data and the divisor data.
Inventor(s): Chao YANG of San Jose CA (US) for samsung electronics co., ltd., Wentao WU of San Jose CA (US) for samsung electronics co., ltd., Glenn YU of San Jose CA (US) for samsung electronics co., ltd., Wei ZHAO of San Jose CA (US) for samsung electronics co., ltd., FNU VIKRAM SINGH of San Jose CA (US) for samsung electronics co., ltd., Xiaoyi ZHANG of San Jose CA (US) for samsung electronics co., ltd., Yong YANG of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F9/38, G06F3/06, G06F9/30, G06F9/54, G06F11/30
CPC Code(s): G06F9/3856
Abstract: a method may include determining, with a queue availability module, that an entry is available in a queue, asserting a bit in a register based on determining that an entry is available in the queue, determining, with a processor, that the bit is asserted, and processing, with the processor, the entry in the queue based on determining that the bit is asserted. the method may further include storing the register in a tightly coupled memory associated with the processor. the method may further include storing the queue in the tightly coupled memory. the method may further include determining, with the queue availability module, that an entry is available in a second queue, and asserting a second bit in the register based on determining that an entry is available in the second queue. the method may further include finding the first bit in the register using a find first instruction.
Inventor(s): Penghui QIAO of Shaanxi Province (CN) for samsung electronics co., ltd., Xiaoyao MIN of Shaanxi Province (CN) for samsung electronics co., ltd., Yuanling SUN of Shaanxi Province (CN) for samsung electronics co., ltd.
IPC Code(s): G06F9/455
CPC Code(s): G06F9/45558
Abstract: a multi-screen allocation management method and apparatus for a plurality of virtual machines are provided. the multi-screen allocation management method of the plurality of virtual machines includes allocating a first display resource to a first virtual machine based on display resource management policy information in response to the first virtual machine starting; and recycling and reallocating the allocated display resource from the first virtual machine based on the display resource management policy information in response to the first virtual machine closing. the display resource management policy information comprises information of at least one display resource configured for each of the plurality of virtual machines, and the first display resource is at least one display resource configured for the first virtual machine.
Inventor(s): Sangkyu Kim of Suwon-si (KR) for samsung electronics co., ltd., Bumgyu Park of Suwon-si (KR) for samsung electronics co., ltd., Sangil Park of Suwon-si (KR) for samsung electronics co., ltd., Jonglae Park of Suwon-si (KR) for samsung electronics co., ltd., Eunok Jo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F9/48, G06F9/38
CPC Code(s): G06F9/4881
Abstract: a method to analyze tasks includes: obtaining, by a second device from a first device, log data including a plurality of log entries corresponding to a plurality of tasks executed in the first device; grouping the plurality of log entries into a plurality of groups based on at least one of task identifier information in each of the plurality of log entries and a type of each of the plurality of log entries; determining execution information and dependency information corresponding to each of the plurality of tasks, based on summing values extracted from log entries in each of the plurality of groups; and generating a task dependency graph indicating dependency information between the plurality of tasks and identifier information about each of the plurality of tasks, based on the execution information and the dependency information.
Inventor(s): Bumgyu PARK of Suwon-si (KR) for samsung electronics co., ltd., Jonglae Park of Suwon-si (KR) for samsung electronics co., ltd., Sangkyu Kim of Suwon-si (KR) for samsung electronics co., ltd., Eunok Jo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F9/52
CPC Code(s): G06F9/526
Abstract: provided is a method of controlling access a shared resources when executing a first process that acquires a lock on the shared resource and adding a second process to a waiting queue. a determination is made on whether to deactivate preemption for the processor based on a priority of the second process, and based on determining to deactivate preemption for the processor, executing the first process until execution of the first process on the shared resource is completed, then retrieving the lock from the first process after execution of the first process on the shared resource is completed and reactivating preemption for the processor.
Inventor(s): Jong Heon JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/10, G06F13/42
CPC Code(s): G06F11/1004
Abstract: a device includes a port connected to a link including one or more lanes to support communication between the device and another device; and a controller that controls the link based on a link training and status state machine (ltssm). the port may receive two received sequences, each defined as a training sequence, through the link in a recovery state included in the ltssm. the training sequence may include a first symbol, including a lane number or a special symbol, and a second symbol including a loopback bit. the controller may transition from the recovery state to a loopback state included in the ltssm, based on the first symbol including the lane number and the loopback bit being set to an active logic state, for both of the two received sequences.
Inventor(s): Uiseok SONG of Suwon-si (KR) for samsung electronics co., ltd., Seoung Bum KIM of Seoul (KR) for samsung electronics co., ltd., Jaehoon KIM of Seoul (KR) for samsung electronics co., ltd., Jungin KIM of Seoul (KR) for samsung electronics co., ltd., Byungwoo BANG of Suwon-si (KR) for samsung electronics co., ltd., Jungmin LEE of Seoul (KR) for samsung electronics co., ltd., Junyeon LEE of Suwon-si (KR) for samsung electronics co., ltd., Jiyoon LEE of Uijeongbu-si (KR) for samsung electronics co., ltd., Jaeyoon JEONG of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/22
CPC Code(s): G06F11/2257
Abstract: a method and device for predicting errors in a computing system are disclosed. the error prediction method includes: receiving log data generated by the computing system during operation of the computing system; tokenizing the log data into tokens; inputting the tokens to a discriminator model which generates scores of the respective tokens, each score corresponding to a probability that the corresponding token is an anomaly token; determining an anomaly score based on the scores; and determining a likelihood of future occurrence of an error in the computing system based on the anomaly score.
Inventor(s): Chuncheng Jiang of Suzhou (CN) for samsung electronics co., ltd., Liang Zhang of Suzhou (CN) for samsung electronics co., ltd.
IPC Code(s): G06F11/30, G06F1/28, G06F15/78
CPC Code(s): G06F11/3062
Abstract: a method for a system on chip (soc) power consumption analysis, the method including: monitoring a plurality of key parameters of the soc, wherein the plurality of key parameters are related to power consumption of the soc; detecting an abnormal type of the soc based on the plurality of key parameters; calling a profile corresponding to the detected abnormal type among a plurality of profiles; monitoring and collecting each of parameters in a parameter set included in the called profile to form a log; and performing power consumption-based analysis on the soc based on the log.
Inventor(s): Youngsam SHIN of Suwon-si (KR) for samsung electronics co., ltd., Woongki BAEK of Ulsan (KR) for samsung electronics co., ltd., Myeonggyun HAN of Ulsan (KR) for samsung electronics co., ltd., Deok Jae OH of Suwon-si (KR) for samsung electronics co., ltd., Eunseong PARK of Ulsan (KR) for samsung electronics co., ltd.
IPC Code(s): G06F12/02
CPC Code(s): G06F12/023
Abstract: a method, for managing a virtual memory using a first memory including a main memory space and a first swap pool and a second memory including a second swap pool, includes: based on a quality of service (qos) of tasks or on a system efficiency corresponding to execution of the tasks, adaptively adjusting a distribution state of the first memory or a size of the first swap pool; and based on the adaptively adjusted distribution state of the first memory or the adaptively adjusted size of the first swap pool, performing swap-out of a first page of the tasks from the main memory space to the first swap pool or the second swap pool or performing swap-in of a second page of the tasks from the first swap pool or the second swap pool to the main memory space.
Inventor(s): Moongyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Euiyeon WON of Suwon-si (KR) for samsung electronics co., ltd., Donghyeon HAM of Suwon-si (KR) for samsung electronics co., ltd., Youngsik EOM of Suwon-si (KR) for samsung electronics co., ltd., Ara CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F12/0811
CPC Code(s): G06F12/0811
Abstract: an electronic device including a main memory, a plurality of caches that are hierarchically connected, the plurality of caches configured to store part of data stored in the main memory, and processing circuitry configured to transmit a memory request for desired data to the plurality of caches and the main memory, the memory request including cache allocation range information associated with the desired data, and each of the plurality of caches are configured to, determine whether to perform an operation corresponding to the memory request based on the cache allocation range information.
Inventor(s): MOONGYUNG KIM of SUWON-SI (KR) for samsung electronics co., ltd., DONGHYEON HAM of SUWON-SI (KR) for samsung electronics co., ltd., YOUNGSIK EOM of SUWON-SI (KR) for samsung electronics co., ltd., EUIYEON WON of SUWON-SI (KR) for samsung electronics co., ltd., ARA CHO of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G06F12/0891, G06F12/0895
CPC Code(s): G06F12/0891
Abstract: a cache includes a data memory, a tag memory, and a cache controller. the data memory includes a stack area storing, in a stack structure, data used by an external processor in a plurality of cache lines. the tag memory stores a tag entry including useless information indicating whether data stored in a corresponding cache line has been popped. the cache controller is configured to, when a pop request for data stored in the stack area is received, change the useless information of a cache line storing the data subject to the pop request, to a useless state.
Inventor(s): Youngsuk Moon of Suwon-si (KR) for samsung electronics co., ltd., Jaegeun Park of Suwon-si (KR) for samsung electronics co., ltd., Jiwon Chang of Suwon-si (KR) for samsung electronics co., ltd., Sangmuk Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F13/28
CPC Code(s): G06F13/28
Abstract: a storage device includes a buffer memory, a first direct memory access (dma) circuit configured to provide data from a host to the buffer memory or data stored in the buffer memory to the host and output a first virtual address, a second dma circuit configured to provide data read from a non-volatile memory to the buffer memory or the data stored in the buffer memory to the non-volatile memory and output a second virtual address, an address translation circuit configured to translate the first or second virtual address into a physical address when the first or second virtual address is included in a reference range and skip the translation operation when the first or second virtual address is excluded in the reference range. a buffer controller is configured to access the buffer memory based on the physical address of the first or second virtual address that is excluded.
Inventor(s): Ramdas Kachare of San Jose CA (US) for samsung electronics co., ltd., Fred Worley of San Jose CA (US) for samsung electronics co., ltd., Xuebin Yao of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F13/42, G06F3/06, G06F9/4401, G06F13/16, G06F13/40, G06N20/00, H04L49/356
CPC Code(s): G06F13/4234
Abstract: a data storage device includes: a data storage medium; a processor comprising a plurality of processor cores; a plurality of application acceleration black-box (aabb) slots including reconfigurable logic blocks, interconnects, and memories; a host interface that receives a host command from a remote application running on a remote host computer, wherein the host command includes an image file including a register-transfer level (rtl) bitstream and a firmware driver; and a configuration controller that downloads the rtl bitstream to an aabb slot of the plurality of aabb slots and reconfigure the aabb slot, and load the firmware driver to a processor core of the processor. the processor core loaded with the firmware driver runs a data acceleration process of the remote application to access and process data stored in the data storage medium using the rtl bitstream downloaded in the aabb slot.
Inventor(s): Sangjune Bae of Suwon-si (KR) for samsung electronics co., ltd., Taeyoon An of Suwon-si (KR) for samsung electronics co., ltd., Joohyung You of Suwon-si (KR) for samsung electronics co., ltd., In Huh of Suwon-si (KR) for samsung electronics co., ltd., Moonhyun Cha of Suwon-si (KR) for samsung electronics co., ltd., Jaemyung Choe of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F30/27
CPC Code(s): G06F30/27
Abstract: provided are a method, a device, and a system for estimating threshold values of a kernel density function with respect to defects of a product. the method includes a bootstrapping sampling operation, estimating optimal kernel bandwidths for sample data sets by using a bandwidth estimation method selected according to a number of sample data from among a plurality of bandwidth estimation methods, estimating threshold values corresponding to a tail region of the kernel density function based on the optimal kernel bandwidths, and providing a quantitative value for quantifying uncertainty of the threshold values based on the plurality of threshold values.
Inventor(s): MOONGYUNG KIM of SUWON-SI (KR) for samsung electronics co., ltd., YOUNGSIK EOM of SUWON-SI (KR) for samsung electronics co., ltd., EUIYEON WON of SUWON-SI (KR) for samsung electronics co., ltd., ARA CHO of SUWON-SI (KR) for samsung electronics co., ltd., DONGHYEON HAM of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G06F30/333
CPC Code(s): G06F30/333
Abstract: an integrated circuit includes a plurality of combinational logic circuits, a scan chain circuit including a plurality of sequential logic circuits configured to store output values of the plurality of combinational logic circuits in synchronization with a first clock signal and sequentially provide first output values stored at a first time point in synchronization with a second clock signal, and control circuitry configured to receive the first output values as input values and sequentially provide the input values to the scan chain circuit. the plurality of sequential logic circuits are configured to store first input values at a second time point passed occurring when a first cycle of the second clock signal passes. the first input values are the same as the first output values.
Inventor(s): Sooyong LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F30/398, G06F30/392
CPC Code(s): G06F30/398
Abstract: a deep learning-based process proximity correction method includes receiving a first layout associated with an after cleaning inspection (aci), the first layout including a plurality of patterns associated with manufacturing a semiconductor device, generating a predictive model based on the plurality of patterns, through deep learning, generating a layout associated with an after development inspection (adi) by correcting the first layout, and predicting an aci using the layout of adi, through the predictive model.
Inventor(s): YunHao ZHANG of Xi’an (CN) for samsung electronics co., ltd., Ronghua KANG of Xi’an (CN) for samsung electronics co., ltd., Seungin PARK of Suwon-si (KR) for samsung electronics co., ltd., Byung In YOO of Suwon-si (KR) for samsung electronics co., ltd., Ying MIN of Xi’an (CN) for samsung electronics co., ltd., Zhijie LV of Xi’an (CN) for samsung electronics co., ltd.
IPC Code(s): G06K7/14
CPC Code(s): G06K7/1417
Abstract: a processor-implemented method with visual code processing includes generating a first image by capturing a first visual code, using an always on (ao) sensor module of an electronic device, detecting a first code image included in the first image and corresponding to the first visual code, using the ao sensor module, performing a first type decoding on the first code image, using the ao sensor module, waking up an application processor (ap) of the electronic device from a low-power state, based on a first decoding result of the first type decoding, and executing a first application of the electronic device corresponding to the first visual code, using the ap.
Inventor(s): Minsoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Minwoo Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06Q10/0631, G06Q10/0637, G06Q10/0639, H04N19/176, H04N19/18, H04N19/46
CPC Code(s): G06Q10/06312
Abstract: an image decoding method may include obtaining a first coded block flag, when the first coded block flag of the current coding unit indicates that the current coding unit comprises the one or more non-zero significant transform coefficients, identifying whether at least one of a height and a width of the current coding unit is greater than a predetermined size, based on whether the at least one of the height and the width of the current coding unit is greater than the predetermined size, obtaining at least one transform unit, when the at least one of the height and the width of the current coding unit is greater than the predetermined size, obtaining a second coded block flag, obtaining a residual signal of the block of the luma component based on the second coded block flag, and reconstructing the current coding unit based on the residual signal.
Inventor(s): Sungjin PARK of Suwon-si (KR) for samsung electronics co., ltd., Youna LEE of Suwon-si (KR) for samsung electronics co., ltd., Juyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Minkyung SHIN of Suwon-si (KR) for samsung electronics co., ltd., Seongmin JE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06Q20/38, G06Q20/40
CPC Code(s): G06Q20/3829
Abstract: an electronic device is provided. the electronic device includes a display, a communication circuit, memory storing computer-executable instructions including a first application for execution a first execution environment and a second application for execution in a second execution environment, a state detection circuit, and at least one processor communicatively coupled to the state detection circuit, the memory, the communication circuit, and the display, and configured to execute at least one of the first application in the first execution environment or the second application in the second execution environment. the computer-executable instructions, when executed by the at least one processor, may cause the electronic device to acquire, in the second execution environment, a signature request for a transaction generated through the first application, acquire first state data through the state detection circuit in response to the signature request, determine, based on the first state data, whether a signature condition stored in the second execution environment is satisfied, generate, based on the determination result, signature data by executing a digital signature for the transaction with a private key stored in the second execution environment, and transmit the signature data to the first application.
Inventor(s): Changhoon Choi of Suwon-si (KR) for samsung electronics co., ltd., Kyungrok Kim of Suwon-si (KR) for samsung electronics co., ltd., Kisuk Sung of Suwon-si (KR) for samsung electronics co., ltd., Youngjun Shin of Suwon-si (KR) for samsung electronics co., ltd., Saetek Oh of Suwon-si (KR) for samsung electronics co., ltd., Seungwon Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T5/40, G06T5/50, G06T7/90, G06V10/56, G06V10/764, G06V10/82
CPC Code(s): G06T5/40
Abstract: an image processing circuit, an image signal processor including the same, and an image processing method are disclosed. the image processing circuit may include a contents-aware circuit configured to receive histograms of a current image and a previous image, classify content for each pixel of the current image, and generate a shifting value representing a color shifting effect for each pixel of the current image, a color shifting circuit configured to generate an enhanced image by applying color shifting depending on the shifting value to each pixel of the current image, based on the shifting value, and a histogram generator configured to generate a histogram of the current image based on the classified content of the current image, wherein the generated histogram of the current image is used to generate a shifting value of a subsequent image.
Inventor(s): Hyeonseung YU of Suwon-si (KR) for samsung electronics co., ltd., Jaeyoung MOON of Suwon-si (KR) for samsung electronics co., ltd., Inwoo HA of Suwon-si (KR) for samsung electronics co., ltd., Nahyup KANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T5/50, G06T3/18, G06T3/4046, G06T3/4053, G06T5/90, G06T7/20
CPC Code(s): G06T5/50
Abstract: a processor-implemented method including merging a first super-sampled image frame, having been generated at a first time point, with a second input image frame corresponding to a super-sampling target for a second time point to generate a merged image and generating a second super-sampled image frame by performing a super-sampling operation at the second time point that includes increasing a bit-precision of a result of an executing, by the processor, of a super-sampling neural network model provided a decreased bit precision of the merged image.
Inventor(s): Nohong Kwak of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T5/70, G06T7/00, G06T7/33, G06T11/00
CPC Code(s): G06T5/70
Abstract: a noise filtering method includes converting a scanning electron microscope (sem) image into a converted design image using a conversion model, converting the converted design image into a gray level co-occurrence matrix (glcm), extracting statistical characteristics of the glcm, and determining whether the converted design image includes noise or not based on the statistical characteristics.
20240320805. IMAGE DENOISING METHOD_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Nohong Kwak of Suwon-si (KR) for samsung electronics co., ltd., Donyun Kim of Suwon-si (KR) for samsung electronics co., ltd., Jiwon Kang of Suwon-si (KR) for samsung electronics co., ltd., Kihyun Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T5/70, G06T7/00, G06V10/44
CPC Code(s): G06T5/70
Abstract: there is provided an image denoising method including extracting a noise patch from a noisy image, outputting a noise parameter by inputting the noise patch to a noise parameter estimation network (npe-net), generating imitated virtual noise based on the output noise parameter, generating a noisier image by adding the imitated virtual noise to the noisy image, training a denoise deep learning model by inputting the noisy image and the noisier image as a pair to the denoise deep learning model, inputting the noisy image to the trained denoise deep learning model, and outputting a denoise image obtained by removing noise from the noisy image by the trained denoise deep learning model.
Inventor(s): SRENIVAS VARADARAJAN of KARNATAKA (IN) for samsung electronics co., ltd., ANAMIKA SHARMA of KARNATAKA (IN) for samsung electronics co., ltd., KAUSTAV CHANDA of KARNATAKA (IN) for samsung electronics co., ltd.
IPC Code(s): G06T5/00, G06T7/00, G06T7/11, G06T7/13, G06T7/20
CPC Code(s): G06T5/90
Abstract: a method and apparatus for estimating a perceptual quality of a high dynamic range (hdr) image includes dividing an image into at least one static region and at least one dynamic region, weighting at least one artifact in the at least one static region and the at least one dynamic region through a visual saliency map, computing at least one edge preservation score based on a static hdr quality index (sqi), a dynamic hdr quality index (dqi) and the at least one weighted artifact, generating an output hdr quality metric by modulating the at least one computed edge preservation score on an input hdr quality metric, and estimating the perceptual quality of the hdr image based on the generated output hdr quality metric.
Inventor(s): Bongju LEE of Suwon-si (KR) for samsung electronics co., ltd., Sangmin JUNG of Suwon-si (KR) for samsung electronics co., ltd., Seunghwan YOO of Suwon-si (KR) for samsung electronics co., ltd., Raehong YOUN of Suwon-si (KR) for samsung electronics co., ltd., Namhoon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T7/00, G06T3/403, G06T5/40, G06T5/92, G06T7/13, G06T7/136, G06T7/60, H01L21/67
CPC Code(s): G06T7/0004
Abstract: a defect inspection or reduction apparatus includes a chamber moving a substrate and having an inner space therein, a laser oscillation structure irradiating a laser beam to a processing area of the substrate, a mask positioned in the laser oscillation structure and processing the laser beam, a beam profiler obtaining a beam image for the laser beam passing through the mask, and a damage detector detecting a defect area of the mask and the laser beam from the beam image. the damage detector includes an image pre-processing department performing a pre-processing on the beam image that is obtained from the beam profiler, an image extraction department extracting a defect area of the beam image on which the pre-processing is performed, and an image detector detecting a defect of the beam image based on the defect area.
Inventor(s): Nohong KWAK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T7/00, G06T11/00
CPC Code(s): G06T7/0006
Abstract: a training scanning electron microscope (sem) image selection method includes setting a plurality of patterns of sem images as samples, performing training on a plurality of training patterns, respectively, to generate a conversion model, converting the training patterns into a plurality of converted design patterns by using the conversion model, comparing the plurality of converted design patterns with the corresponding design image pattern to determine misalignment therebetween, obtaining, for each of the plurality of training patterns, effective distances which are smallest values of distances from each of the plurality of training patterns to a pattern that is misaligned, extracting the training pattern having a maximum effective distance as an optimal training pattern, deleting the samples that are within the maximum effective distance in the optimal training pattern, and determining whether all the samples are aligned.
Inventor(s): Zhihua LIU of Beijing (CN) for samsung electronics co., ltd., Yamin Mao of Beijing (CN) for samsung electronics co., ltd., Hongseok Lee of Seoul (KR) for samsung electronics co., ltd., Paul Oh of Seongnam-si (KR) for samsung electronics co., ltd., Qiang Wang of Beijing (CN) for samsung electronics co., ltd., Yuntae Kim of Suwon-si (KR) for samsung electronics co., ltd., Weiheng Liu of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): G06T7/73, G06T3/4038, G06T7/50
CPC Code(s): G06T7/75
Abstract: disclosed is a pose identification method including obtaining a depth image of a target, obtaining feature information of the depth image and position information corresponding to the feature information, and obtaining a pose identification result of the target based on the feature information and the position information.
Inventor(s): Nova T. SPIVACK of Sherman Oaks CA (US) for samsung electronics co., ltd.
IPC Code(s): G06T19/00, G02B27/01, G06F3/01, G06F3/0488, G06Q30/0601, G06V20/20, G09G5/377
CPC Code(s): G06T19/006
Abstract: techniques are disclosed for facilitating electronic commerce in an augmented reality environment. in some embodiments, a method comprises detecting, by a mobile device, presence of the physical product or the real life service; and presenting, on the mobile device, information to conduct the transaction of a physical product or a real life service via the augmented reality environment. in some embodiments, a method comprises detecting one or more targets in the augmented reality platform using a select area in a perspective of a user, the perspective being captured by a mobile device; and prompting the user to choose an object of interest from the one or more detected targets.
Inventor(s): Woo-Shik KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V10/143, G06T7/11, G06T7/13, G06T7/30, G06V10/56, G06V10/60
CPC Code(s): G06V10/143
Abstract: an image acquisition apparatus includes: a sensor unit including a plurality of first image sensors that are based on a wavelength band of 380 nm to 780 nm; and at least one processor. the at least one processor is configured to: acquire common illumination information from an image output from at least one of the plurality of first image sensors, and color-convert an image output from each of the plurality of first image sensors based on the common illumination information.
Inventor(s): Taewon KWAK of Suwon-si (KR) for samsung electronics co., ltd., Donghyuk LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V30/22, G06F3/0483, G06F3/04845, G06F3/04883, G06F40/103, G06V30/19, G06V30/30
CPC Code(s): G06V30/22
Abstract: an electronic device is provided. the electronic device includes a display and at least one processor, wherein the at least one processor can be configured to identify a first tilt between a first handwriting input displayed on the display and a first preceding handwriting input that precedes the first handwriting input, the first handwriting input corresponding to a first block, identify a second tilt between a second handwriting input displayed on the display and a second preceding handwriting input that precedes the second handwriting input, the second handwriting input being continuous to the first handwriting input, use the first tilt and the second tilt to determine whether the second handwriting input corresponds to the first block or corresponds to a second block differing from the first block, and perform, based on the second handwriting input corresponding to the second block, at least one operation for processing a plurality of handwriting inputs indicating the second block.
Inventor(s): Hyeonseong Kim of Suwon-si (KR) for samsung electronics co., ltd., Minkyung Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G08B21/04
CPC Code(s): G08B21/043
Abstract: an electronic device includes: a communication circuit; a first sensor; a processor; and memory storing instructions that cause the electronic device to: determine whether a user wearing the electronic device is in a standing posture; determine that the electronic device is a main electronic device and an external electronic device connected to the electronic device is a sub electronic device, based on determining that the user is in the standing posture; obtain first information related to a fall of the user; receive, from the external electronic device through the communication circuit, second information related to the fall of the user. the second information is obtained by the external electronic device; and detect the fall of the user, by applying a first weight to the first information and by applying a second weight corresponding to the sub electronic device. the second weight is lower than the first weight.
20240321206. DISPLAY PANEL AND DISPLAY APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Uijong SONG of Suwon-si (KR) for samsung electronics co., ltd., Sunkwon KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyungjoong KIM of Suwon-si (KR) for samsung electronics co., ltd., Seongyoung RYU of Suwon-si (KR) for samsung electronics co., ltd., Yilho LEE of Suwon-si (KR) for samsung electronics co., ltd., Heejin LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/3233, H10K59/131
CPC Code(s): G09G3/3233
Abstract: a display apparatus includes plural pixels, a scan driver, a data driver, and a read-out circuit that reads out an electrical characteristic of each of the pixels. each of the pixels includes a first transistor, a second transistor, a third transistor, a fourth transistor including a first electrode connected with a power node, a second electrode connected with a first node, and a gate connected with a first emission control line, a fifth transistor including a first electrode connected with a third node, a second electrode, and a gate connected with a second emission control line, a sixth transistor including a first electrode connected with a read-out line, a second electrode connected with the third node, and a gate connected a the read-out/initialization control line, a capacitor connected between the first node and the second node, and an organic light-emitting diode.
20240321213. DISPLAY PANEL AND DISPLAY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Uijong SONG of Suwon-si (KR) for samsung electronics co., ltd., Sunkwon KIM of Suwon- (KR) for samsung electronics co., ltd., Seongyoung RYU of Suwon-si (KR) for samsung electronics co., ltd., Heejin LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/3266, G09G3/3275
CPC Code(s): G09G3/3266
Abstract: a display device includes a plurality of pixels, a scan driver, a data driver, and a read-out circuit configured to read out electrical characteristics of the plurality of pixels. a first pixel of the plurality of pixels includes a first transistor connected to a first node and having a gate connected to a second node, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor including a first terminal connected to a seventh conductive line, a second terminal connected to the second node, and having a gate connected to a fourth conductive line, a seventh transistor including a first terminal connected to the seventh conductive line, a second terminal connected to a third node, and a gate connected to a fifth conductive line, a capacitor, and an organic light emitting diode.
Inventor(s): Tapas Kanungo of Redmond WA (US) for samsung electronics co., ltd., Stephen Walsh of Sunnyvale CA (US) for samsung electronics co., ltd., Preeti Saraswat of Santa Clara CA (US) for samsung electronics co., ltd., Yurii Lozhnevsky of Sunnyvale CA (US) for samsung electronics co., ltd., Nehal Bengre Juraska of Cupertino CA (US) for samsung electronics co., ltd., Qingxiaoyang Zhu of Woodland CA (US) for samsung electronics co., ltd.
IPC Code(s): G10L15/06
CPC Code(s): G10L15/063
Abstract: a method includes generating, using at least one processing device of an electronic device, a multilingual training corpus including labeled utterances in multiple languages including a first language and a second language. the multilingual training corpus includes at least one utterance that has been translated into the multiple languages. the method also includes fine-tuning, using the at least one processing device, a multilingual language model using the multilingual training corpus.
Inventor(s): Chansik BOK of Suwon-si (KR) for samsung electronics co., ltd., Chanhee CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G10L15/22, G10L15/28
CPC Code(s): G10L15/22
Abstract: disclosed is an electronic device for performing voice recognition by using a recommended command. the electronic device according to various embodiments may include: a processor; an input module for receiving a voice input from a user; and a memory electrically connected to the processor and storing an instruction executable by the processor, a client module, and a recommended command, wherein the processor: determines whether domains of a plurality of plans, which are consecutively generated according to a command included in the voice input, are identical to each other by a configured number or more; when the domains are identical to each other, determines the recommended command on the basis of the domains and stores the recommended command in the memory; and executes the client module on the basis of the plans generated according to the recommended command.
Inventor(s): Ranjan Kumar SAMAL of Bengaluru (IN) for samsung electronics co., ltd., Praveen Kumar GUVVAKALLU SIVAMOORTHY of Bengaluru (IN) for samsung electronics co., ltd., Biju MATHEW NEYYAN of Bengaluru (IN) for samsung electronics co., ltd., Somesh NANDA of Bengaluru (IN) for samsung electronics co., ltd., Arshed V. HAKEEM of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): G10L21/0208
CPC Code(s): G10L21/0208
Abstract: embodiments herein disclose methods for handling a sound source in a media by an electronic device. the method includes: determining and classifying a relevant sound source in a media as a primary sound source, a secondary sound source, and a non-subject sound source based on a determined context; generating an output sound by suppressing at least one of the secondary sound source and the non-subject sound source in the media and optimizing the primary sound source in the media using a data driven model based on the determination and classification; or generating the output sound by partially suppressing at least one of the secondary sound source and the non-subject sound source in the media and optimizing the primary sound source in the media using the data driven model based on the determination and classification.
Inventor(s): Jayesh Rajkumar VACHHANI of Bengaluru (IN) for samsung electronics co., ltd., Sourabh Vasant GOTHE of Belagavi (IN) for samsung electronics co., ltd., Vibhav AGARWAL of Bengaluru (IN) for samsung electronics co., ltd., Barath Raj Kandur RAJA of Bengaluru (IN) for samsung electronics co., ltd., Likhith AMARVAJ of Bengaluru (IN) for samsung electronics co., ltd., Rishabh KHURANA of Dehradun (IN) for samsung electronics co., ltd., Satyam KUMAR of Patna (IN) for samsung electronics co., ltd., Pranay KASHYAP of Greater Noida (IN) for samsung electronics co., ltd., Karri Hima Satya HEMANTH of Bengaluru (IN) for samsung electronics co., ltd., Himanshu ARORA of Bengaluru (IN) for samsung electronics co., ltd., Yashwant SAINI of Alwar (IN) for samsung electronics co., ltd., Sourav GHOSH of Kolkata (IN) for samsung electronics co., ltd.
IPC Code(s): G11B27/036, G06T7/20, G06V10/74, G06V20/40, G11B27/34
CPC Code(s): G11B27/036
Abstract: a method may include obtaining a plurality of frames of at least one video; determining an occurrence of a change from a first event of the at least one video to a second event of the video; determining a location in the plurality of frames; inserting one or more masked frames at the location between at least one frame of the first event and at least one frame of the second event; determining at least one transition component present in the at least one frame of the first event and the at least one frame of the second event; determining a motion of pixels for the at least one transition component across the plurality of frames of the first event and the plurality of frames of the second event; providing at least one transition effect in the one or more masked frames between the first event and the second event.
Inventor(s): Poornima Venkatasubramanian of Bengaluru (IN) for samsung electronics co., ltd., Gopi Sunanth Kumar Gogineni of Bengaluru (IN) for samsung electronics co., ltd., Puneet Suri of Bengaluru (IN) for samsung electronics co., ltd., Lava Kumar Pulluru of Bengaluru (IN) for samsung electronics co., ltd., Karthikeyan Somashekara of Bengaluru (IN) for samsung electronics co., ltd., Manish Chandra Joshi of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): G11C7/04, G11C7/14, G11C7/22
CPC Code(s): G11C7/04
Abstract: a memory device, includes a voltage and temperature sensing circuit configured to generate a pull down (pd) signal that varies based on upon at least one of a voltage and temperature at the memory device; and primary pull down paths provided with secondary pull down paths, wherein the primary pull down paths are provided separately at a dummy read bit line (drbl) and a dummy global read bit line (dgrbl), wherein the secondary pull down paths are provided separately for the drbl and the dgrbl parallel to the respective primary pull down paths. the voltage and temperature sensing circuit is configured to perform at least one of: controlling at least one of the secondary pull down paths based on a voltage of the pd signal; varying a discharge time of at least one of the dummy bit-lines based on the voltage of the pd signal; and generating an early reset signal at one of a high temperature condition and a high voltage condition based on the voltage of the pd signal.
Inventor(s): Anil KAVALA of Suwon-si (KR) for samsung electronics co., ltd., Youngmin Jo of Suwon-si (KR) for samsung electronics co., ltd., Jungjune Park of Suwon-si (KR) for samsung electronics co., ltd., Chiweon Yoon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C7/22, G11C7/14, H03L7/099
CPC Code(s): G11C7/222
Abstract: a storage device includes a buffer chip and a memory device. the memory device transmits a random data signal and a data strobe signal to the buffer chip based on a clock signal received from the buffer chip. the buffer chip includes a delay circuit that delays the data strobe signal by a delay time to generate a delayed data strobe signal, a sampler that receives the delayed data strobe signal from the delay circuit and samples the random data signal based on the delayed data strobe signal to generate sampled data, a comparator that compares internal data with the sampled data to generate a comparison result, and a counter module that receives the comparison result from the comparator and determines a target delay based on the comparison result. the buffer chip delays the delayed data strobe signal based on the target delay.
Inventor(s): Jeongchun RYU of Suwon-si (KR) for samsung electronics co., ltd., Seungjae LEE of Suwon-si (KR) for samsung electronics co., ltd., Kwangseok KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/16, H01F10/32, H10B61/00, H10N50/10, H10N50/85
CPC Code(s): G11C11/161
Abstract: a magnetic tunneling junction device includes a synthetic antiferromagnet, a separation metal layer disposed on the synthetic antiferromagnet, a free layer disposed on the separation metal layer and having a variable magnetization direction, an oxide layer disposed on the free layer, and a pinned layer disposed on the oxide layer and having a pinned magnetization direction. the synthetic antiferromagnet may include a first ferromagnetic layer, a non-magnetic metal layer disposed on the first ferromagnetic layer, and a second ferromagnetic layer disposed on the non-magnetic metal layer. magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer may be opposite to each other in an in-plane direction and aligned to be inclined with respect to a direction of a current applied to the synthetic antiferromagnet.
Inventor(s): Kideok HAN of Suwon-si (KR) for samsung electronics co., ltd., Ki-Seok PARK of Suwon-si (KR) for samsung electronics co., ltd., Young-Hoon SON of Suwon-si (KR) for samsung electronics co., ltd., Do-Han KIM of Suwon-si (KR) for samsung electronics co., ltd., Min-Su BAE of Suwon-si (KR) for samsung electronics co., ltd., Yoenhwa LEE of Suwon-si (KR) for samsung electronics co., ltd., Insu CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4076, G11C11/4096
CPC Code(s): G11C11/4076
Abstract: a training method of a memory device adjusting an eye window of a data signal in response to a duty cycle adjuster (dca) includes performing a first training operation that selects a first dca code corresponding to a first internal clock signal having a phase difference of 180� relative to a reference internal clock signal, and performing a second training operation that selects a second dca code and a third dca code respectively corresponding to a second internal clock signal and a third internal clock signal having a phase difference of 90� and 270� relative to reference internal clock signal. in the first training operation, the eye window size of the data signal is measured in units of two unit intervals, and in the second training operation, the eye window size of the data signal is measured in units of one unit interval.
Inventor(s): Ji-Hyun Choi of Suwon-si (KR) for samsung electronics co., ltd., Ho Young Tang of Suwon-si (KR) for samsung electronics co., ltd., Eo Jin Lee of Suwon-si (KR) for samsung electronics co., ltd., Tae-Hyung Kim of Suwon-si (KR) for samsung electronics co., ltd., Yu Tak Jeong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/412, G11C11/419, H01L23/528, H10B10/00
CPC Code(s): G11C11/412
Abstract: a memory device is provided. the memory device includes a memory cell array including a plurality of memory cells arranged in a plurality of columns and rows and including first and second memory cells in a same column and different rows, the plurality of columns intersecting the plurality of rows in a plan view, a first bit line transistor electrically connected between the first memory cell and a first bit line metal line and a second bit line transistor electrically connected between the second memory cell and a second bit line metal line, wherein the first bit line metal line is on an upper surface of the memory cell array, and the second bit line metal line is on a lower surface of the memory cell array opposite the upper surface of the memory cell array.
Inventor(s): SUNG-MIN JOE of SEOUL (KR) for samsung electronics co., ltd., KANG-BIN LEE of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/10, G11C16/04, G11C16/08, G11C16/24, H01L23/00, H01L25/065, H01L25/18, H10B41/27, H10B43/27
CPC Code(s): G11C16/10
Abstract: a memory device includes a memory cell region including a first metal pad, a peripheral circuit region including a second metal pad and vertically connected to the memory cell region by the first and second metal pads, a memory cell array in the memory cell region including cell strings including memory cells, word lines respectively connected to the memory cells, bit lines connected to one side of the cell strings, and a ground selection line connected to the cell strings, a control logic in the peripheral circuit region including a precharge control circuit for controlling precharge on partial cell strings among the cell strings and controlling a plurality of data program steps on the memory cells, and a row decoder in the peripheral circuit region for activating at least some of the word lines in response to a control of the control logic.
Inventor(s): Kun-Woo Song of Hwaseong-si (KR) for samsung electronics co., ltd., Jonghwa Kim of Seoul (KR) for samsung electronics co., ltd., Kyungyong Jeoung of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/34, G11C16/04, G11C16/10, G11C16/26, H10B43/27
CPC Code(s): G11C16/3431
Abstract: disclosed is a storage device, which includes a nonvolatile memory device including a first memory block connected with a plurality of first word lines, and a memory controller connected with the nonvolatile memory device through a plurality of data lines. the memory controller sends a first command to the nonvolatile memory device through the plurality of data lines during a first command input period, sends a parameter to the nonvolatile memory device through the plurality of data lines during an address input period, and sends a second command to the nonvolatile memory device through the plurality of data lines during a second command input period. the nonvolatile memory device applies a turn-on voltage to all the plurality of first word lines connected with the first memory block based on the parameter during a first time in response to the first command and the second command.
Inventor(s): Jiwon SEO of Suwon-si (KR) for samsung electronics co., ltd., Keeho JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C29/52, G11C7/10, G11C7/22
CPC Code(s): G11C29/52
Abstract: a memory device including: a memory cell array including pages each page including memory cells; a page buffer circuit including page buffers corresponding to the memory cells of each page, each of the page buffers including first through n-th latches; and a control logic to control first hard decision data and first soft decision data read in a first read operation on a first page to remain in a first page buffer during a second read operation on a second page, and control an output operation such that the first hard decision data is output after the first soft decision data is output when the memory device is set to a first output mode, wherein the first hard decision data is based on a normal read level and the first soft decision data is based on an offset read level read from the first page.
Inventor(s): Jaehoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyun-Ji Song of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01B7/04, H01B7/02, H01G4/08, H01G4/14, H01L23/498, H05K1/18
CPC Code(s): H01B7/04
Abstract: a wire structure includes a metal layer, a dielectric layer covering at least a portion of an outer surface of the metal layer, and a filling material provided in the dielectric layer, wherein a flexibility of the filling material is higher than a flexibility of the dielectric layer.
Inventor(s): Jiye KIM of Suwon-si (KR) for samsung electronics co., ltd., In Cheol Cheol SONG of Hwaseong-si (KR) for samsung electronics co., ltd., Woongpil JEON of Jeju-si (KR) for samsung electronics co., ltd., Daihong KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaebeom PARK of Yongin-si (KR) for samsung electronics co., ltd., Byungho CHUN of Seongnam-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01J37/32, C23C16/505, H05K9/00
CPC Code(s): H01J37/32449
Abstract: an apparatus for manufacturing a semiconductor device includes a chamber including a lower housing and an upper housing, heater chucks in the lower housing, shower heads on the heater chucks, the shower heads being between the lower housing and the upper housing, power supplies connected to the shower heads to provide radio-frequency powers to the shower heads, power straps in the upper housing to connect the shower heads to the power supplies, and shielding members in the upper housing, the shielding members enclosing the power straps and the shower heads, respectively, the shielding members to prevent electromagnetic interference of the radio-frequency powers between the power straps and between the shower heads.
Inventor(s): Dong Jin PARK of Suwon-si (KR) for samsung electronics co., ltd., Sung-Yong MOON of Suwon-si (KR) for samsung electronics co., ltd., Jun Young JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/027, G03F1/70, G03F1/82, H01L21/8234
CPC Code(s): H01L21/0274
Abstract: a photomask manufacturing method includes defining a main region and a dummy region based on a layout data, wherein the main region corresponds to an outer boundary surrounding functional patterns defined by the layout data and the dummy region corresponds to an empty space outside the main region, and forming a dummy pattern to fill the dummy region. the forming of the dummy pattern includes placing at least one first pattern block in the dummy region to form a first sub-region, each of the at least one first pattern block having a first area, and placing, after completing the placing of the at least one first pattern block in the dummy region, at least one second pattern block in the dummy region except the first sub-region to form a second sub-region, each of the at least one second pattern block having a second area smaller than the first area.
Inventor(s): Hoyoung RYU of Suwon-si (KR) for samsung electronics co., ltd., SEUNGKWAN HONG of Seoul (KR) for samsung electronics co., ltd., JAEWON LEE of Seoul (KR) for samsung electronics co., ltd., Daeok KIM of Suwon-si (KR) for samsung electronics co., ltd., YEOJIN SHIN of Seoul (KR) for samsung electronics co., ltd., Dongchan CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/67, B01J35/39, H01L21/02
CPC Code(s): H01L21/67051
Abstract: disclosed are semiconductor fabrication systems, chemical supply apparatuses, and substrate processing methods. the semiconductor fabrication system comprises a substrate processing apparatus and a chemical supply apparatus that supplies the substrate processing apparatus with a chemical. the chemical supply apparatus includes a main tank, a supply line that connects the main tank to an inlet of the substrate processing apparatus, a recycle tank connected to an outlet of the substrate processing apparatus, and a recycle filtering device between the recycle tank and the main tank. the recycle filtering device includes a photocatalytic reactor, a nanofilter between the photocatalytic reactor and the main tank, and a connection line that connects the photocatalytic reactor to the nanofilter.
Inventor(s): Suhwan SHIM of Suwon-si (KR) for samsung electronics co., ltd., Sungchul KIM of Suwon-si (KR) for samsung electronics co., ltd., Sangho JANG of Suwon-si (KR) for samsung electronics co., ltd., Youngshin CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/68, H01L21/66, H01L21/67, H01L21/673, H01L21/683
CPC Code(s): H01L21/681
Abstract: a semiconductor manufacturing apparatus includes a semiconductor package. a tray has the semiconductor package seated thereon. an inspector inspects an alignment state of the semiconductor package. a protrusion is on a top surface of the tray and extends in a z direction that is a vertical direction. the protrusion surrounds a side surface of the semiconductor package when the semiconductor package is in an aligned state. the semiconductor package overlaps at least a portion of the protrusion in the z direction when the semiconductor package is in a misaligned state. an under vision camera detects a rotation angle of the semiconductor package with respect to an x-y plane defined in a first horizontal direction x and a second horizontal direction y that cross the z direction. a picker moves the semiconductor package between the tray and an area above the under vision camera.
20240321619. SUBSTRATE SUPPORTER_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yunjae Lee of Suwon-si (KR) for samsung electronics co., ltd., Jun Hyung Kim of Suwon-si (KR) for samsung electronics co., ltd., Sangyeon Oh of Suwon-si (KR) for samsung electronics co., ltd., Jihyeong Lee of Suwon-si (KR) for samsung electronics co., ltd., Yonjoo Kang of Suwon-si (KR) for samsung electronics co., ltd., Youngil Kang of Suwon-si (KR) for samsung electronics co., ltd., Minsung Kim of Suwon-si (KR) for samsung electronics co., ltd., Inhwan Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/683, H01L21/02, H01L21/67
CPC Code(s): H01L21/6833
Abstract: the present disclosure relates to substrate supporters and substrate processing apparatuses. an example substrate supporter includes an upper surface on which a substrate is loaded, a base, an outer dam extending along an edge of the base, a contact band connected with the outer dam, extending along the circumferential direction of the base, and onto which the substrate is loaded, and a first contact pattern disposed adjacent to the contact band and extending into an inside of the contact band, the first contact pattern extending along the circumferential direction of the base, where an area of the first contact pattern is larger than an area where the contact band overlaps with the substrate.
Inventor(s): YOUNG-JA KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/683, H01L21/60
CPC Code(s): H01L21/6838
Abstract: an adsorption device for a reflow process according to an embodiment is coupled to a semiconductor package to form a reflow assembly in a reflow process. the semiconductor package includes a substrate and a semiconductor chip disposed at one surface of the substrate. the adsorption device for the reflow process includes a main body and a pressure control member. the main body includes an inner space portion and includes a bottom portion and a substrate adsorption portion that protrudes from the bottom portion to be adhered to the one surface of the substrate in an outer region of the semiconductor chip by a negative pressure. the pressure control member maintains a pressure of the inner space portion.
Inventor(s): Jinwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Jongho Lee of Suwon-si (KR) for samsung electronics co., ltd., Yeongkwon Ko of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/31, H01L21/56, H01L23/00, H01L23/29, H01L23/498, H01L25/00, H01L25/18
CPC Code(s): H01L23/3157
Abstract: a method of manufacture for a semiconductor package includes; forming a molding member on side surfaces of the semiconductor chips, using an adhesive to attach a carrier substrate to upper surfaces of the molding member and the semiconductor chips, using a first blade having a first blade-width to cut away selected portions of the carrier substrate and portions of the adhesive underlying the selected portions of the carrier substrate, and using the first blade to partially cut into an upper surface of the molding member to form a first cutting groove, wherein the selected portions of the carrier substrate are dispose above portions of the molding member between adjacent ones of semiconductor chips, using a second blade having a second blade-width narrower than the first blade-width to cut through a lower surface of the molding member to form a second cutting groove, wherein a combination of the first cutting groove and the second cutting groove separate a package structure including a semiconductor chip supported by a cut portion of the carrier substrate and bonding the package structure to an upper surface of a package substrate.
20240321667. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Seunghun Shin of Suwon-si (KR) for samsung electronics co., ltd., Soyeon Kwon of Suwon-si (KR) for samsung electronics co., ltd., Unbyoung Kang of Suwon-si (KR) for samsung electronics co., ltd., Yeongkwon Ko of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/31, H01L21/56, H01L21/78, H01L25/00, H01L25/065, H01L25/18, H10B80/00
CPC Code(s): H01L23/3185
Abstract: a semiconductor package includes a first semiconductor chip including a first surface and a second surface opposite to the first surface, a second semiconductor chip stacked on the first surface of the first semiconductor chip, and a molding layer contacting the first surface of the first semiconductor chip and a sidewall of the second semiconductor chip. the molding layer includes a first sidewall from a lower end of the first semiconductor chip to a first height in a first direction perpendicular to the first surface of the first semiconductor chip, a second sidewall from the first height to a second height in the first direction, and a flat surface that extends from the first height in a second direction that is parallel with the first surface of the first semiconductor chip.
20240321669. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sunggu Kang of Suwon-si (KR) for samsung electronics co., ltd., JAE CHOON KIM of Suwon-si (KR) for samsung electronics co., ltd., SUNG-HO MUN of Suwon-si (KR) for samsung electronics co., ltd., Hwanjoo Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/367, H01L23/00, H01L23/31, H01L23/498, H01L25/065, H01L25/10, H10B80/00
CPC Code(s): H01L23/367
Abstract: a semiconductor package includes a substrate, a semiconductor die on the substrate, a heat spreader covering the semiconductor die. the heat spreader includes an upper plate portion, a base portion, and a sidewall portion connecting the upper plate portion to the base portion. the upper plate portion and the sidewall portion define an underlying cavity. the base portion is disposed on the substrate, extends from an exterior side of the sidewall portion in a horizontal direction, includes a plurality of first through holes, has a bottom surface at the same level as a bottom surface of the sidewall portion, and has a height in a vertical direction from a lowermost portion to an uppermost portion thereof less than or equal to that of the sidewall portion.
20240321673. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sunggu KANG of Suwon-si (KR) for samsung electronics co., ltd., JAE CHOON KIM of Suwon-si (KR) for samsung electronics co., ltd., SUNG-HO Mun of Suwon-si (KR) for samsung electronics co., ltd., Hwanjoo Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/367, H01L21/56, H01L23/00, H01L23/373, H01L23/498
CPC Code(s): H01L23/3675
Abstract: a semiconductor package includes a redistribution layer structure, a semiconductor structure on the redistribution layer structure, at least one heat dissipation structure on the semiconductor structure, where the at least one heat dissipation structure may include a first epoxy molding compound, a molding material for molding the semiconductor structure and the at least one heat dissipation structure, on the redistribution layer structure, where the molding material may include a second epoxy molding compound, where the first epoxy molding compound may have higher thermal conductivity than the second epoxy molding compound.
Inventor(s): Youngjoon KOH of Suwon-si (KR) for samsung electronics co., ltd., Jaechoon KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/427, H01L25/18, H10B80/00
CPC Code(s): H01L23/427
Abstract: a heat dissipation structure may include a heat dissipation chamber including a lower wall, an upper wall on the lower wall, and a plurality of sidewalls extending between the lower wall and the upper wall, the heat dissipation chamber providing an inner space for a working fluid to flow therein; and a wick structure on an inner surface of the heat dissipation chamber. the wick structure may be configured to guide the working fluid in a liquid state. the heat dissipation chamber may be configured to change its shape according to a temperature.
Inventor(s): Sungchan KANG of Suwon-si (KR) for samsung electronics co., ltd., Daehyuk Son of Suwon-si (KR) for samsung electronics co., ltd., Seogwoo Hong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/427, H01L25/065
CPC Code(s): H01L23/427
Abstract: a semiconductor device includes: a semiconductor chip; a cooling channel configured to allow a coolant to (i) flow in liquid phase and (ii) absorb heat generated by the semiconductor chip during operation; and a wick structure configured to generate a capillary force for moving the coolant in the liquid phase along a wall surface of the cooling channel. the wick structure includes a suspended wick structure that is disposed apart from the wall surface by a capillary distance.
Inventor(s): Sunggu Kang of Suwon-si (KR) for samsung electronics co., ltd., Jaechoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Sungho Mun of Suwon si (KR) for samsung electronics co., ltd., Hwanjoo Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/46, H05K7/20
CPC Code(s): H01L23/46
Abstract: provided is a semiconductor package including a substrate, a first semiconductor device on the substrate, and a heat dissipation structure on the first semiconductor device including a heat dissipation chamber configured to provide an internal space in which a working fluid moves, and a plurality of first isolation walls arranged in the heat dissipation chamber to define a first center channel and a plurality of first vapor channels communicating with each other via the first center channel, wherein each of the plurality of first isolation walls vertically overlaps the first semiconductor device, the first center channel vertically overlaps the first semiconductor device, and each of the plurality of first vapor channels extends from the first center channel in a lateral direction.
20240321682. HEAT DISSIPATION STRUCTURES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jonggyu Lee of Suwon-si (KR) for samsung electronics co., ltd., Jaechoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Youngjoon Koh of Suwon-si (KR) for samsung electronics co., ltd., Taehwan Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/427, H01L23/00, H01L23/528, H01L25/10, H10B80/00
CPC Code(s): H01L23/473
Abstract: provided is a semiconductor package including a package substrate, a semiconductor device mounted on the package substrate, and a heat dissipation structure attached onto the semiconductor device, wherein the heat dissipation structure includes a plurality of vapor chambers at different levels in the vertical direction and a plurality of heat pipes extending between the plurality of vapor chambers.
Inventor(s): Jinwoo PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/473, H01L23/00, H01L25/065
CPC Code(s): H01L23/473
Abstract: a semiconductor package may include a semiconductor chip, a dummy semiconductor chip on the semiconductor chip;, and a bonding insulating layer between the semiconductor chip and the dummy semiconductor chip. the bonding insulating layer may attach the semiconductor chip to the dummy semiconductor chip. the dummy semiconductor chip may include a cooling channel extending from an inlet to an outlet. the inlet may be in fluid communication with the outlet through the cooling channel. the inlet may be configured to allow a cooling fluid to flow in. the outlet may be configured to allow the cooling fluid to flow out. a top surface of the bonding insulating layer may have a concave-convex shape.
20240321689. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Juneyoung PARK of Suwon-si (KR) for samsung electronics co., ltd., Heonjong SHIN of Suwon-si (KR) for samsung electronics co., ltd., Jongmin SHIN of Suwon-si (KR) for samsung electronics co., ltd., Jaeran JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L29/06, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L23/481
Abstract: provided is a semiconductor device including an active device layer including a plurality of source/drain patterns, a plurality of insulating layers on the active device layer, a back end of line (beol) structure on the plurality of insulating layers and configured to supply electric power to the active device layer, an intermediate layer between the plurality of insulating layers and the beol structure, and at least one power via penetrating through the intermediate layer and at least a part in each of the plurality of insulating layers in a vertical direction. the at least one power via electrically connects the beol structure and the active device layer. at least a part of a side surface of the at least one power via is in contact with the intermediate layer.
20240321690. INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Youngbin Lee of Suwon-si (KR) for samsung electronics co., ltd., Man Chang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L21/768, H01L23/522
CPC Code(s): H01L23/481
Abstract: an integrated circuit device includes a substrate, an insulating structure on a frontside surface of the substrate, a contact structure including a first plug portion that extends through the substrate, and a self-assembled organic material insulating liner between the first plug portion and the substrate.
Inventor(s): Daeyeun Choi of Suwon-si (KR) for samsung electronics co., ltd., Taeho Ko of Suwon-si (KR) for samsung electronics co., ltd., Unbyoung Kang of Suwon-si (KR) for samsung electronics co., ltd., Seokbong Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L21/52, H01L21/56, H01L23/00, H01L23/31, H01L25/10, H10B80/00
CPC Code(s): H01L23/49811
Abstract: a semiconductor package includes an upper redistribution structure, a first substrate, a first semiconductor chip, a second semiconductor chip, a bridge chip, and a first insulating layer. the upper redistribution structure includes an upper redistribution insulating layer and upper redistribution patterns. the first substrate includes an upper surface, a lower surface, a first cavity extending in a vertical direction, and a second cavity provided apart from the first cavity in a horizontal direction and extending in the vertical direction. the first substrate is on an upper surface of the upper redistribution structure. the first semiconductor chip is accommodated in the first cavity and electrically connected to a subset of the upper redistribution patterns. the second semiconductor chip is accommodated in the second cavity and electrically connected to a subset of the upper redistribution patterns. the bridge chip is below the upper redistribution structure. the first insulating layer surrounds the bridge chip.
20240321701. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jeonghyun LEE of Seoul (KR) for samsung electronics co., ltd., Hwanpil PARK of Hwaseong-si (KR) for samsung electronics co., ltd., Jongbo SHIM of Asan-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/31, H01L23/64, H01L25/18
CPC Code(s): H01L23/49811
Abstract: a semiconductor package includes a package substrate, an interposer, a semiconductor chip between the package substrate and the interposer, a plurality of conductive connectors between the package substrate and the interposer, and a capacitor stack structure between the package substrate and the interposer, the capacitor stack structure including a first capacitor connected to the package substrate, and a second capacitor connected to the interposer.
Inventor(s): Daehun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00
CPC Code(s): H01L23/49838
Abstract: a semiconductor package includes a semiconductor chip, and a package substrate including a base layer, a plurality of upper bump pads disposed on the base layer, an upper passivation layer disposed on the base layer, the upper passivation layer including a plurality of first openings, and an insulating patch disposed between an outer region of the semiconductor chip and the upper passivation layer, the insulating patch including a plurality of patch openings, and a plurality of bump structures disposed between the upper bump pads and the semiconductor chip, wherein each of the plurality of bump structures is disposed on a corresponding one of the plurality of upper bump pads through a corresponding one of the plurality of first openings of the upper passivation layer and a corresponding one of the plurality of patch openings of the insulating patch.
20240321712. CHIP-ON-FILM PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Narae SHIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00
CPC Code(s): H01L23/49838
Abstract: a chip-on-film (cof) package including a base film having facing first and second surfaces; a first upper pattern on the first surface and extending in a first direction; second upper patterns on the first surface, the second upper patterns including inner patterns and outer patterns that are spaced apart from each other in the first direction; an upper insulating layer covering the first upper pattern and part of the second upper patterns; lower patterns on the second surface and electrically connecting the inner patterns to the outer patterns; and inner via plugs passing through the base film and electrically connecting the inner patterns of the second upper patterns to the lower patterns, wherein at least one inner pattern is electrically connected to the inner via plug in a region that is not covered by the upper insulating layer.
20240321713. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yoonyoung JEON of Suwon-si (KR) for samsung electronics co., ltd., Dongheon KANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/31, H01L23/00
CPC Code(s): H01L23/49838
Abstract: a semiconductor package may include a first redistribution structure, a semiconductor chip on the first redistribution structure, conductive posts spaced apart from the semiconductor chip and on the first redistribution structure, a molding layer on the first redistribution structure and surrounding the semiconductor chip and the conductive posts, and a second redistribution structure on the molding layer. the second redistribution structure may include a second redistribution pattern, a pad structure connected to the second redistribution pattern, and a second redistribution insulating layer. the second redistribution insulating layer may include a first insulating layer surrounding the second redistribution pattern and a second insulating layer surrounding at least a portion of the pad structure. the pad structure may include a second pad layer on a first pad layer. surfaces of the first and second pad layers in contact with the second insulating layer may be concavo-convex.
Inventor(s): Hyejin Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H05K1/11
CPC Code(s): H01L23/49838
Abstract: a printed circuit board includes a board base including a plurality of base layers, a plurality of via pads with a via pad being disposed on each of the plurality of base layers, and a plurality of through-vias with at least one respective through-via of the plurality of through-vias penetrating a respective base layer and making contact with a respective via pad of the plurality of base layers. each via pad of the plurality of via pads has a shape in which a plurality of sub-shapes are arranged based on the center point of the respective via pad in a partially overlapping manner, and a group of through-vias are in contact with a respective via pad in a manner corresponding to the plurality of sub-shapes.
Inventor(s): YOONYOUNG JEON of SUWON-SI (KR) for samsung electronics co., ltd., YOUNGMIN KIM of SUWON-SI (KR) for samsung electronics co., ltd., JOON SEOK OH of SUWON-SI (KR) for samsung electronics co., ltd., CHANGBO LEE of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L21/48
CPC Code(s): H01L23/49894
Abstract: a semiconductor package includes a semiconductor chip, and a redistribution structure connected to the semiconductor chip. the redistribution structure may include an under bump pattern, a first redistribution layer disposed on the under bump pattern and including a first redistribution pad, a partition disposed inside the first redistribution pad and including a material that is different from that of the first redistribution pad, a contact via disposed on the first redistribution pad and the partition, and a second redistribution layer including a second redistribution pad disposed on the contact via.
20240321726. INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jinwoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Yubo QIAN of Suwon-si (KR) for samsung electronics co., ltd., Hyunjae KANG of Suwon-si (KR) for samsung electronics co., ltd., Gyeongseop KIM of Suwon-si (KR) for samsung electronics co., ltd., Sutae KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaeyoung PARK of Suwon-si (KR) for samsung electronics co., ltd., Jeonwon JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/522, H01L23/528, H01L27/088
CPC Code(s): H01L23/5226
Abstract: an integrated circuit device includes a first conductive pattern disposed on a substrate, a second conductive pattern surrounding a portion of the first conductive pattern and covering a lower portion of a sidewall of the first conductive pattern, an upper insulation structure on the first conductive pattern and the second conductive pattern, and an upper conductive pattern penetrating through the upper insulation structure and extending in a vertical direction, wherein the upper conductive pattern includes a main plug portion overlapping the first conductive pattern and the second conductive pattern in the vertical direction, and a vertical extension extending from a portion of the main plug portion toward the substrate, covering an upper of the upper sidewall of the first conductive pattern, and overlapping the second conductive pattern in the vertical direction, and a dummy contact is formed on a single diffusion break region on the substrate.
20240321728. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Myungsam Kang of Hwaseong-si (KR) for samsung electronics co., ltd., Youngchan Ko of Seoul (KR) for samsung electronics co., ltd., Jeongseok Kim of Cheonan-si (KR) for samsung electronics co., ltd., Bongju Cho of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/522, H01L23/00, H01L23/28, H01L23/31, H01L23/528, H01L23/532
CPC Code(s): H01L23/5226
Abstract: a semiconductor package includes: a first redistribution structure having a first surface and a second surface opposing the first surface, and including a first insulating layer and a first redistribution layer disposed on the first insulating layer; a semiconductor chip disposed on the first surface of the first redistribution structure, and including a connection pad electrically connected to the first redistribution layer and embedded in the first insulating layer; a vertical connection structure disposed on the first surface and electrically connected to the first redistribution layer; an encapsulant encapsulating at least a portion of each of the semiconductor chip and the vertical connection structure; a second redistribution structure disposed on the encapsulant and including a second redistribution layer electrically connected to the vertical connection structure; and a connection bump disposed on the second surface and electrically connected to the first redistribution layer.
Inventor(s): Choonghyun Lee of Seoul (KR) for samsung electronics co., ltd., Joonyong Choe of Hwaseong-si (KR) for samsung electronics co., ltd., Youngju Lee of Yongin-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/522, H01L21/768, H10B12/00
CPC Code(s): H01L23/5228
Abstract: an integrated circuit device includes a conductive line including a metal layer and an insulation capping structure covering the conductive line. the first insulation capping structure includes a first insulation capping pattern that is adjacent to the metal layer in the insulation capping structure and has a first density, and a second insulation capping pattern spaced apart from the metal layer with the first insulation capping pattern therebetween and having a second density that is greater than the first density. in order to manufacture the integrated circuit device, the conductive line having a metal layer is formed on a substrate, a first insulation capping layer having the first density is formed directly on the metal layer, and a second insulation capping layer having the second density that is greater than the first density is formed on the first insulation capping layer.
20240321735. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Seungbo KO of Suwon-si (KR) for samsung electronics co., ltd., Sujin KANG of Suwon-si (KR) for samsung electronics co., ltd., Jongmin KIM of Suwon-si (KR) for samsung electronics co., ltd., Donghyuk AHN of Suwon-si (KR) for samsung electronics co., ltd., Jiwon OH of Suwon-si (KR) for samsung electronics co., ltd., Chansic YOON of Suwon-si (KR) for samsung electronics co., ltd., Myeongdong LEE of Suwon-si (KR) for samsung electronics co., ltd., Minyoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Inho CHA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/528, H10B12/00
CPC Code(s): H01L23/528
Abstract: a semiconductor device includes a substrate, a word line extending on the substrate in a first horizontal direction, a bit line extending on the substrate in a second horizontal direction perpendicular to the first horizontal direction, and a spacer structure on one sidewall of the bit line, wherein the bit line includes a lower conductive layer, an intermediate conductive layer, and an upper conductive layer stacked in a vertical direction on the substrate, and the spacer structure includes a depletion stopping layer on one sidewall of the lower conductive layer, extending in the vertical direction and including a material layer having an interfacial trap density less than an interfacial trap density of a silicon nitride layer, and an inner spacer extending in the vertical direction and on one sidewall of the depletion stopping layer.
Inventor(s): Yeongkwon Ko of Suwon-si (KR) for samsung electronics co., ltd., Jiyoung Park of Suwon-si (KR) for samsung electronics co., ltd., Hosin Song of Suwon-si (KR) for samsung electronics co., ltd., Sera Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/528, H01L23/00, H01L23/48, H01L23/532, H01L25/00, H01L25/065
CPC Code(s): H01L23/5283
Abstract: the present disclosure relates to semiconductor packages. an example semiconductor package includes a substrate including an active surface and an inactive surface, a plurality of wiring structures arranged on the active surface of the substrate, an inter-wiring insulating layer arranged on the active surface of the substrate and configured to cover the plurality of wiring structures, a modified layer including both side surfaces thereof covered by the inter-wiring insulating layer and including a carbonized material, and a passivation layer arranged on the inter-wiring insulating layer and the modified layer.
Inventor(s): Okgyeong PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/538, H01L23/00, H01L23/48, H01L23/498, H01L25/065, H01L25/10, H10B80/00
CPC Code(s): H01L23/5383
Abstract: a package substrate may include a core substrate including a first surface and a second surface, a first core laminated structure on the first surface of the core substrate, including first core insulating layers and first cores wiring layers on the first core insulating layers, and including a first chip mounting space defined by the first core insulating layers, a bridge chip within the first chip mounting space and including a bridge substrate and a bridge pad, and a second core laminated structure on the second surface of the core substrate, and including second core insulating layers and second core wiring layers on the second core insulating layers, wherein the first core insulating layers have a first coefficient of thermal expansion, and the second core insulating layers have a second coefficient of thermal expansion less than the first coefficient of thermal expansion.
Inventor(s): Myungsam Kang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/538, H01L23/15, H01L25/065, H10B80/00
CPC Code(s): H01L23/5384
Abstract: provided is a semiconductor package capable of minimizing the size of a silicon (si) interposer and minimizing warpage of a package substrate while maintaining a chip-to-chip connection function. the semiconductor package includes a package substrate including a glass core substrate, a silicon (si) bridge interposer, and a multi-layer wiring layer disposed under the glass core substrate and the si bridge interposer, and at least two semiconductor devices stacked on the package substrate, wherein a cavity is formed in a central portion of the glass core substrate, and the si bridge interposer is embedded in the cavity.
Inventor(s): Manhee HAN of Suwon-si (KR) for samsung electronics co., ltd., Jimin KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/544, H01L21/78
CPC Code(s): H01L23/544
Abstract: provided is a semiconductor chip including a substrate, an active layer on the substrate, and a coated layer on side surfaces of the active layer and configured to surround the active layer, wherein an average roughness of the side surfaces of the active layer is greater than an average roughness of an upper surface of the active layer, and at least a portion of the substrate contacts the coated layer.
Inventor(s): Kitae Park of Suwon-si (KR) for samsung electronics co., ltd., Chiwan Song of Suwon-si (KR) for samsung electronics co., ltd., Seonkyu Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyunna Bae of Suwon-si (KR) for samsung electronics co., ltd., Seungmin Baek of Suwon-si (KR) for samsung electronics co., ltd., Yongjae Song of Suwon-si (KR) for samsung electronics co., ltd., Joonseok Oh of Suwon-si (KR) for samsung electronics co., ltd., Jaewook Jung of Suwon-si (KR) for samsung electronics co., ltd., Seokil Hong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L21/02, H01L21/3205, H01L23/31, H01L23/492, H01L25/065, H10B80/00
CPC Code(s): H01L23/562
Abstract: the present disclosure relates to semiconductor devices and semiconductor packages. one example semiconductor device includes a crystalline silicon layer, an amorphous silicon layer on the crystalline silicon layer and extending along a first surface of the crystalline silicon layer, and a dielectric layer on the amorphous silicon layer and extending along a surface of the amorphous silicon layer. the dielectric layer includes silicon oxynitride and has compressive stress.
20240321775. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Shlege LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyunggil BAEK of Suwon-si (KR) for samsung electronics co., ltd., Minwoo CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/31, H01L23/498, H01L23/64, H01L25/10, H10B80/00
CPC Code(s): H01L23/562
Abstract: a semiconductor package comprises: a first package substrate; a semiconductor device mounted on a first surface of the first package substrate and connected to the first package substrate; a plurality of connection pads on a second surface of the first package substrate; a plurality of external connection terminals respectively disposed on one or more connection pads of the plurality of connection pads; a plurality of passive elements mounted on one or more connection pads of the plurality of connection pads in which the plurality of external connection terminals are not disposed; and a floating structure disposed between at least one passive element from the plurality of passive elements and at least one external connection terminal from the plurality of external connection terminals, spaced apart from the at least one passive element and the at least one external connection terminal, and disposed on the second surface of the first package substrate.
Inventor(s): Eunkyoung CHOI of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/498, H01L25/065
CPC Code(s): H01L23/562
Abstract: a semiconductor package including a package base substrate, an interposer on the package base substrate, a plurality of semiconductor chips on the interposer, and a stiffener structure including a stiffener frame and a stiffener extension portion, the stiffener frame being on the package base substrate and apart from the interposer, the stiffener extension portion extending from the stiffener frame, spaced apart from the plurality of semiconductor chips, and extending onto the interposer to have a portion on the interposer, and the stiffener frame being an integral structure with the extension portion, may be provided.
20240321788. PAD AND PACKAGE INCLUDING SAME_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Wenjun WANG of Suzhou Industrial Park (CN) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H04N23/52
CPC Code(s): H01L24/05
Abstract: a pad includes a terminal portion having a first surface and a second surface opposite to the first surface; and a curved concave portion formed in one of the first surface and the second surface, wherein the curved concave portion is configured to clad a portion of a connecting conductor.
20240321792. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Duckgyu Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00
CPC Code(s): H01L24/05
Abstract: provided is a semiconductor package including a semiconductor chip, a pad structure electrically connected to the semiconductor chip, a solder ball spaced apart from the semiconductor chip in a first direction and in contact with the pad structure, and an insulating layer arranged between the semiconductor chip and the pad structure and in contact with the pad structure, wherein the insulating layer includes a first ring-shaped groove having a ring shape surrounding the pad structure, and the first ring-shaped groove is spaced apart from the pad structure.
Inventor(s): Jeonggi Jin of Suwon-si (KR) for samsung electronics co., ltd., Gyuho Kang of Suwon-si (KR) for samsung electronics co., ltd., Unbyoung Kang of Suwon-si (KR) for samsung electronics co., ltd., Heewon Kim of Suwon-si (KR) for samsung electronics co., ltd., Jumyong Park of Suwon-si (KR) for samsung electronics co., ltd., Hyunsu Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/48, H01L23/522, H01L23/532
CPC Code(s): H01L24/08
Abstract: a semiconductor chip includes: a semiconductor substrate; a pad insulating layer on the semiconductor substrate; a through electrode which penetrates the semiconductor substrate and the pad insulating layer and includes a conductive plug and a conductive barrier layer surrounding a sidewall of the conductive plug; and a bonding pad which surrounds a sidewall of the through electrode and is spaced apart from the conductive plug with the conductive barrier layer disposed therebetween.
20240321799. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kiwon Baek of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00
CPC Code(s): H01L24/14
Abstract: provided is a semiconductor package including a first substrate, a first pattern and a second pattern disposed on the first substrate, a semiconductor chip disposed on the first substrate and including a metal layer, a circuit structure disposed on the metal layer of the semiconductor chip, and a plurality of first bumps disposed between the first substrate and the semiconductor chip and electrically connected to the first pattern, wherein the first pattern includes a ground pattern or a power pattern, the first substrate includes a first region overlapping the circuit structure in a vertical direction, the plurality of first bumps are disposed adjacent to the first region on a top surface of the first substrate, and a first bump of the plurality of first bumps has an elongated shape substantially parallel to an adjacent side of the first region.
Inventor(s): Dowan Kim of Suwon-si (KR) for samsung electronics co., ltd., Jieun Woo of Suwon-si (KR) for samsung electronics co., ltd., Unbyoung Kang of Suwon-si (KR) for samsung electronics co., ltd., Seokbong Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L21/56, H01L23/31, H01L25/18, H10B80/00
CPC Code(s): H01L24/20
Abstract: a semiconductor package a first package unit comprising a semiconductor chip; and a redistribution structure on the first package unit, wherein the redistribution structure comprises a plurality of wiring lines and a plurality of insulating layers on the plurality of wiring lines, wherein the plurality of wiring lines comprise first subset including a plurality of outermost wiring lines and a second subset, wherein a vertical distance between the plurality of outermost wiring lines and the first package unit is greater than a vertical distance between the second subset of the plurality of wiring lines and the first package unit, a respective surface roughness of each of the plurality of outermost wiring lines is different, and the respective surface roughness of each of the plurality of outermost wiring lines is based on a respective width of each of the plurality of outermost wiring lines in a horizontal direction.
Inventor(s): Seungho Hahn of Suwon-si (KR) for samsung electronics co., ltd., Wooyoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Minwoo Rhee of Suwon-si (KR) for samsung electronics co., ltd., Bumki Moon of Suwon-si (KR) for samsung electronics co., ltd., Kyeongbin Lim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00
CPC Code(s): H01L24/27
Abstract: a method of manufacturing a semiconductor device includes preparing a first substrate and a second substrate respectively including a bonding layer having metal pads and a dielectric layer, performing a planarization process on a surface of the bonding layer of each of the first and second substrates, applying wet atomic layer etching to the surface of the bonding layer so that a surface of the metal pad is recessed to a target depth, and bonding the bonding layer of the first substrate to the bonding layer of the second substrate using an annealing process.
20240321815. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Soohyun NAM of Yongin-si (KR) for samsung electronics co., ltd., Younglyong KIM of Anyang-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/498, H01L25/065
CPC Code(s): H01L24/73
Abstract: a semiconductor package including an interposer substrate, first to third semiconductor chips on the interposer substrate to face each other, an underfill part between each of the first to third semiconductor chips and the interposer substrate, a first side-fill part extending upward from a lower end of side walls of the first to third semiconductor chips, and a second side-fill part between the side walls of the first to third semiconductor chips and extending from the first side-fill part to an upper end of the side walls of the first to third semiconductor chips may be provided.
Inventor(s): Donguk Kwon of Suwon-si (KR) for samsung electronics co., ltd., Gongmyeong Kim of Suwon-si (KR) for samsung electronics co., ltd., Sunchul Kim of Suwon-si (KR) for samsung electronics co., ltd., Chaein Moon of Suwon-si (KR) for samsung electronics co., ltd., Hyeonrae Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L21/48, H01L23/31, H01L25/18, H10B80/00
CPC Code(s): H01L24/83
Abstract: provided is a semiconductor package with enhanced reliability and a method of manufacturing the same. the semiconductor package includes a package substrate including a body layer having a central area and a peripheral area, a first protective layer on a top surface of the body layer, and a second protective layer on the first protective layer in the peripheral area, a semiconductor chip mounted on the first protective layer in the central area in a flip-chip structure, an underfill in a gap between the first protective layer and the semiconductor chip and in a gap between the connection terminals, an interposer on the semiconductor chip, and inter-substrate connection terminals on the peripheral area of the package substrate and electrically connecting the package substrate to the interposer, where the underfill has an anchor structure extending into the first protective layer.
Inventor(s): Dongchul YANG of Suwon-si (KR) for samsung electronics co., ltd., Inwon O of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L23/367, H01L23/498
CPC Code(s): H01L25/0652
Abstract: a semiconductor package includes a first redistribution substrate; a first semiconductor chip on the first redistribution substrate; a second redistribution substrate on the first semiconductor chip; inter-substrate through-electrodes on the first redistribution substrate at one side of the first semiconductor chip and connecting the first redistribution substrate to the second redistribution substrate; a second semiconductor chip on the first semiconductor chip; and a heat dissipation structure on the second semiconductor chip.
20240321831. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Insup SHIN of Suwon-si (KR) for samsung electronics co., ltd., Hyeongmun KANG of Suwon-si (KR) for samsung electronics co., ltd., Yuduk KIM of Suwon-si (KR) for samsung electronics co., ltd., Seungwoo SIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H10B80/00
CPC Code(s): H01L25/0657
Abstract: provided is a semiconductor package including a first semiconductor chip, a plurality of second semiconductor chips sequentially stacked on the first semiconductor chip, a plurality of conductive front pads on lower surfaces of the plurality of second semiconductor chips, a plurality of conductive rear pads attached to an upper surface of the first semiconductor chip and an upper surface of each of the plurality of second semiconductor chips, and including a plurality of first bonding pads and a plurality of second bonding pads in different regions, and a plurality of chip connection terminals between the plurality of conductive front pads and the plurality of conductive rear pads, wherein each of the plurality of second bonding pads includes a supporting part configured to support each of the plurality of chip connection terminals, and a fixing part protruding from an upper surface of the supporting part.
20240321839. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kyungdon Mun of Suwon-si (KR) for samsung electronics co., ltd., Kyounglim Suk of Suwon-si (KR) for samsung electronics co., ltd., Jihwang Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/10, H01L23/00, H01L23/31, H01L23/367, H01L23/498, H10B80/00
CPC Code(s): H01L25/105
Abstract: a semiconductor package includes a first redistribution structure including a first redistribution insulating layer and a first redistribution pattern, a first lower semiconductor device mounted on the first redistribution structure, a molding layer surrounding the first lower semiconductor device on the first redistribution structure, a plurality of vertical connection conductors in the molding layer and electrically connected to the first redistribution pattern, a heat dissipation plate disposed on an upper surface of the first lower semiconductor device, and a plurality of upper semiconductor devices disposed on the molding layer and on the first lower semiconductor device, each of the plurality of upper semiconductor devices vertically overlapping a different respective region of the first lower semiconductor device.
Inventor(s): Jingfan YANG of Suzhou (CN) for samsung electronics co., ltd., Peng Zhang of Suzhou (CN) for samsung electronics co., ltd.
IPC Code(s): H01L25/10, H01L23/00, H01L23/31, H01L23/48, H01L23/538, H01L25/065
CPC Code(s): H01L25/105
Abstract: a three-dimensional semiconductor package including: a package substrate having a first surface and a second surface opposite to the first surface; a first redistribution layer on the first surface of the package substrate, the first redistribution layer having a first surface and a second surface opposite to each other; a first chip on the first surface of the first redistribution layer, electrically connected to the first redistribution layer, and including first through silicon vias; first connection terminals electrically connected to one ends of the first through silicon vias; a second redistribution layer on the second surface of the package substrate, the second redistribution layer having a first surface and a second surface opposite to each other, the first surface of the second redistribution layer facing the second surface of the package substrate; and a second chip on the second surface of the second redistribution layer.
20240321841. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hwanjoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Jaechoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Sunggu KANG of Suwon-si (KR) for samsung electronics co., ltd., Taehwan KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/10, H01L23/00, H01L23/31, H01L23/373, H01L23/498, H01L23/538, H01L25/065
CPC Code(s): H01L25/105
Abstract: the disclosure provides a semiconductor package including a first wiring structure including a first wiring, a first semiconductor chip on the first wiring structure, a molding member surrounding the first semiconductor chip, a second wiring structure on an upper surface of the molding member and including a second wiring and a heat conductive metal, a second semiconductor chip on an upper surface of the second wiring structure, a plurality of first bumps between the second wiring structure and the second semiconductor chip, an underfill layer covering the plurality of first bumps, and a first thermal interface material (tim) on an upper surface of the heat conductive metal, the heat conductive metal not overlapping the plurality of first bumps in the vertical direction.
Inventor(s): Tong-Suk Kim of Suwon-si (KR) for samsung electronics co., ltd., Byeong-Yeon Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/10, G11C5/02, G11C5/04, H01L23/00, H01L25/00
CPC Code(s): H01L25/105
Abstract: a package-on-package (pop) semiconductor package includes an upper package and a lower package. the lower package includes a first semiconductor device in a first area, a second semiconductor device in a second area, and a command-and-address vertical interconnection, a data input-output vertical interconnection, and a memory management vertical interconnection adjacent to the first area.
20240321847. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Eunsu Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/16, H01L23/00, H01L23/48, H01L25/18, H10B80/00
CPC Code(s): H01L25/16
Abstract: a semiconductor package includes a first substrate; a first chip structure disposed above the first substrate in a vertical direction; a second chip structure disposed above the first substrate and spaced apart from the first chip structure in a first horizontal direction perpendicular to the vertical direction; an underfill material layer disposed between the second chip structure and the first substrate; and a first protrusion extending from the first substrate in the vertical direction and extending in a second horizontal direction perpendicular to the vertical direction and the first horizontal direction along at least one side surface of the underfill material layer, where a side surface of the first protrusion contacts the underfill material layer.
Inventor(s): Juhyeon Kim of Cheonan-si (KR) for samsung electronics co., ltd., Hyoeun Kim of Cheonan-si (KR) for samsung electronics co., ltd., Sunkyoung Seo of Cheonan-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/00, H01L21/768, H01L21/78, H01L23/00, H01L25/065
CPC Code(s): H01L25/50
Abstract: a method of manufacturing a semiconductor package includes preparing a wafer structure having a first semiconductor substrate and a plurality of first front surface connection pads. a lower semiconductor chip having a preliminary semiconductor substrate and a plurality of second front surface connection pads are attached to the wafer structure such that the plurality of first front surface connection pads and the plurality of second front surface connection pads correspond to each other. a plurality of bonding pads is formed by bonding together the plurality of first front surface connection pads and the plurality of second front surface connection pads corresponding to each other. a second semiconductor substrate having a horizontal width that is less than that of the second wiring structure is formed by removing a portion of the preliminary semiconductor substrate.
Inventor(s): Hyunsuk KANG of Suwon-si (KR) for samsung electronics co., ltd., Jehoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Jungjune PARK of Suwon-si (KR) for samsung electronics co., ltd., Chiweon YOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/02, H02H9/04
CPC Code(s): H01L27/0285
Abstract: an electrostatic discharge protection circuit includes an nmos transistor connected to a supply voltage pin through a first node and connected to a ground pin through a second node, an rc circuit connected in parallel with the nmos transistor and including a capacitor and a resistor, and a clamping circuit connected in parallel with the resistor of the rc circuit and including a plurality of diodes; and a switch connecting the clamping circuit to a gate node of the nmos transistor, wherein a number of the plurality of diodes is set based on a breakdown voltage and an operating voltage of an internal circuit to be protected by the esd protection circuit, and the switch includes a pmos transistor connecting the gate node of the nmos transistor to the clamping circuit and a sub-rc circuit connected in parallel with the pmos transistor and including a sub-capacitor and a sub-resistor.
20240321873. INTEGRATED CIRCUIT DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Doohyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Heonjong SHIN of Suwon-si (KR) for samsung electronics co., ltd., Juneyoung PARK of Suwon-si (KR) for samsung electronics co., ltd., Jaeran JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/088, H01L21/8234, H01L23/48, H01L23/522
CPC Code(s): H01L27/088
Abstract: an integrated circuit device, including a substrate having a plurality of device regions extending in a first horizontal direction, a plurality of gate electrodes on the plurality of device regions extending in a second horizontal direction that is orthogonal to the first horizontal direction, a plurality of source/drain regions between a pair of gate electrodes adjacent to each other in the first horizontal direction among the plurality of gate electrodes, the plurality of source/drain regions being on portions of the plurality of device regions, a plurality of gate cut regions cutting the plurality of gate electrodes and extending in the first horizontal direction, and a plurality of contact structures including a plurality of contact body portions and a plurality of contact finger portions, the plurality of contact body portions filling the plurality of gate cut regions and extending in the first horizontal direction.
20240321874. INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jeonghyeon Lee of Suwon-si (KR) for samsung electronics co., ltd., Hakjong Lee of Suwon-si (KR) for samsung electronics co., ltd., Yeonghan Gwon of Suwon-si (KR) for samsung electronics co., ltd., Hanyoung Song of Suwon-si (KR) for samsung electronics co., ltd., Subin Lee of Suwon-si (KR) for samsung electronics co., ltd., Junyoup Lee of Suwon-si (KR) for samsung electronics co., ltd., Hyunjun Lim of Suwon-si (KR) for samsung electronics co., ltd., Taeho Cha of Suwon-si (KR) for samsung electronics co., ltd., Seunghyeon Hong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/088, H01L21/762, H01L21/8234
CPC Code(s): H01L27/088
Abstract: an integrated circuit device includes a pair of fin-type active regions collinear with each other on a substrate, a gate line disposed on one of the fin-type active regions, a capping insulating layer that covers the gate line, and a fin isolation insulating portion that passes through the capping insulating layer in a vertical direction between the pair of fin-type active regions. the fin isolation insulating portion includes an isolation insulating plug that includes a first portion disposed between the pair of fin-type active regions and a second portion integrally connected to the first portion and that passes through the capping insulating layer in the vertical direction, and an isolation insulating liner that surrounds a bottom surface and a sidewall of the isolation insulating plug. the isolation insulating liner includes an uppermost portion that is closer to the substrate than a top surface of the isolation insulating plug.
20240321875. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Wooseok PARK of Suwon-si (KR) for samsung electronics co., ltd., Jaeho Jeon of Suwon-si (KR) for samsung electronics co., ltd., Donghoon Hwang of Suwon-si (KR) for samsung electronics co., ltd., Taehyun Ryu of Suwon-si (KR) for samsung electronics co., ltd., Namhyun Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/088, H01L29/06, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L27/088
Abstract: a semiconductor device includes a substrate, an active region protruding from an upper surface of the substrate and extending in a first horizontal direction, a plurality of nanosheet stacks on the active region, a plurality of gate lines extending in a second horizontal direction intersecting the first horizontal direction, on the active region, and surrounding the plurality of nanosheet stacks, and a first insulating pattern between two nanosheet stacks adjacent in the first horizontal direction among the plurality of nanosheet stacks, on the active region, and extending in a vertical direction perpendicular to the first horizontal direction and the second horizontal direction, wherein the first insulating pattern is in contact with the plurality of nanosheet stacks.
Inventor(s): Seong-Ho SONG of Yongin-si (KR) for samsung electronics co., ltd., Jong Han LEE of Yangsan-si (KR) for samsung electronics co., ltd., Jong Ha PARK of Suwon-si (KR) for samsung electronics co., ltd., Jae Hyun LEE of Hwaseong-si (KR) for samsung electronics co., ltd., Jong Hoon BAEK of Ansan-si (KR) for samsung electronics co., ltd., Da Bok JEONG of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/088, H01L21/8234
CPC Code(s): H01L27/088
Abstract: a semiconductor device including a substrate including first and second regions along a first direction, and a third region between the first region and the second region, an active pattern extending in the first direction, on the substrate, and first to third gate electrodes spaced apart from each other and extending in a second direction, on the active pattern, the active pattern of the first region including first semiconductor patterns spaced apart from each other and penetrating the first gate electrode, the active pattern of the second region including second semiconductor patterns spaced apart from each other and penetrating the second gate electrode, the active pattern of the third region including a transition pattern protruding from the substrate and intersecting the third gate electrode and including a sacrificial pattern and a third semiconductor pattern alternately stacked on the third region and including different materials from each other.
Inventor(s): Inhyun SONG of Suwon-si (KR) for samsung electronics co., ltd., Junggil YANG of Suwon-si (KR) for samsung electronics co., ltd., Sangmoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Myunggil KANG of Suwon-si (KR) for samsung electronics co., ltd., Jongsu KIM of Suwon-si (KR) for samsung electronics co., ltd., Beomjin PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/092, H01L21/8238, H01L29/06, H01L29/423, H01L29/49, H01L29/66, H01L29/775, H01L29/786
CPC Code(s): H01L27/092
Abstract: provided is a semiconductor device including a substrate, a fin-type active region protruding on the substrate, a channel region on the fin-type active region and including a plurality of active patterns extending in a first horizontal direction and a semiconductor material layer, a gate line extending in a second horizontal direction that is perpendicular to the first horizontal direction and covering the channel region on the fin-type active region, and a pair of source/drain regions at both sides of the gate line on the fin-type active region, wherein a work function of the semiconductor material layer is different from a work function of the plurality of active patterns, the semiconductor material layer surrounds portions of the gate line between the plurality of active patterns, and the gate line is separated from the pair of source/drain regions with the semiconductor material layer therebetween.
20240321885. INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jinbum Kim of Suwon-si (KR) for samsung electronics co., ltd., Ingyu Jang of Suwon-si (KR) for samsung electronics co., ltd., Sujin Jung of Suwon-si (KR) for samsung electronics co., ltd., Gyeom Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyojin Kim of Suwon-si (KR) for samsung electronics co., ltd., Yongjun Nam of Suwon-si (KR) for samsung electronics co., ltd., Sangmoon Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/092, H01L21/8238
CPC Code(s): H01L27/092
Abstract: an integrated circuit device includes a first transistor comprising a first conductivity type, which includes a first channel region and a first source/drain region, a second transistor comprising a second conductivity type, which includes a second channel region and a second source/drain region, a first contact structure that contacts the first source/drain region and comprising a first length, and the first contact structure extends from above the first source/drain region and beyond an uppermost surface of the first channel region by a first vertical distance, and a second contact structure that contacts the second source/drain region and having a second length that is greater than the first length, the second contact extends from above the second source/drain region and beyond an uppermost surface of the second channel region by a second vertical distance, which is greater than the first vertical distance.
20240321886. STACKED INTEGRATED CIRCUIT DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kyunghee Cho of Suwon-si (KR) for samsung electronics co., ltd., Myungil Kang of Suwon-si (KR) for samsung electronics co., ltd., Kyungho Kim of Suwon-si (KR) for samsung electronics co., ltd., Kyowook Lee of Suwon-si (KR) for samsung electronics co., ltd., Seunghun Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/092, H01L29/06, H01L29/417, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L27/092
Abstract: a stacked integrated circuit device includes a plurality of transistors including a pair of pull-up transistors in a first layer, a pair of pull-down transistors in a second layer that is at a different vertical level than the first layer, and a pair of pass-gate transistors in the first or second layer, a contact configured to electrically connect a source/drain region of one of the pull-up transistors, a source/drain region of one of the pull-down transistors, and a source/drain region of one of the pass-gate transistors to one another, a gate contact configured to connect a gate electrode of the other pull-up transistor to a gate electrode of the other pull-down transistor, and an upper wire on the contact and the gate contact, the upper wire extending in a first horizontal direction and being connected to the contact and the gate contact.
20240321888. SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Donggon YOO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/092, H01L21/822, H01L21/8238, H01L23/528, H01L29/06, H01L29/417, H01L29/423, H01L29/66, H01L29/775
CPC Code(s): H01L27/0922
Abstract: a semiconductor device may include: insulating patterns; a device isolation layer on side surfaces of the insulating patterns; gate structures; source/drain regions on the insulating patterns; a via structure between the gate structures and between the source/drain regions; and contact structures connected to the source/drain regions and the via structure, wherein the source/drain regions may include first source/drain regions and second source/drain, wherein the via structure may extend from the same level as lower surfaces of the first source/drain regions to the same level as upper surfaces of the second source/drain regions, and the via structure may include a portion in which a width of the via structure increases and then decreases or decreases and then increases, wherein the contact structures may include a first contact structure contacting the first source/drain regions and a second contact structure contacting the second source/drain regions.
Inventor(s): Narae Shin of Suwon-si (KR) for samsung electronics co., ltd., Jeongkyu Ha of Suwon-si (KR) for samsung electronics co., ltd., Woonbae Kim of Suwon-si (KR) for samsung electronics co., ltd., Yechung Chung of Suwon-si (KR) for samsung electronics co., ltd., Jaemin Jung of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/12
CPC Code(s): H01L27/124
Abstract: a chip of film package comprises a film substrate having a chip mounting region, an inner lead bonding region arranged within the chip mounting region, and an outer lead bonding region spaced apart from the inner lead bonding region in a first direction, and providing upper and lower surfaces opposite to each other, a first upper wiring pattern arranged on the upper surface of the film substrate and extending in the first direction from the inner lead bonding region to the outer lead bonding region, a second upper wiring pattern spaced apart from the first upper wiring pattern in the first direction, an upper solder resist layer covering an upper surface of the first upper wiring pattern; and a lower solder resist layer covering an upper surface of the lower wiring pattern.
20240321910. IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kook-tae KIM of Hwaseong-si (KR) for samsung electronics co., ltd., Jin-gyun KIM of Hwaseong-si (KR) for samsung electronics co., ltd., Soo-jin HONG of Guri-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146, H04N25/40
CPC Code(s): H01L27/14605
Abstract: an image sensor including a semiconductor substrate having a first surface and a second surface; and a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate, wherein the pixel isolation film includes a buried conductive layer including polysilicon containing a fining element at a first concentration; and an insulating liner between the buried conductive layer and the semiconductor substrate, and wherein the fining element includes oxygen, carbon, or fluorine.
Inventor(s): Minkwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Joonhyuk HWANG of Suwon-si (KR) for samsung electronics co., ltd., Jonghyun GO of Suwon-si (KR) for samsung electronics co., ltd., Changkyu LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/1462
Abstract: an image sensor having a structure in which a light-blocking film having an excellent light-blocking effect is provided in a light-blocking region includes a first substrate including a first surface and a second surface, the first surface including a plurality of transistors, and the second surface being opposite to the first surface and configured to receive light, the first substrate comprising a pixel array region and a light-blocking region, an anti-reflection structure on the second surface of the first substrate in the pixel array region and the light-blocking region, and a light-blocking structure on the anti-reflection structure in the light-blocking region, wherein the light-blocking structure comprises a plurality of film that are sequentially stacked, the plurality of film including at least a first conductive film, a first insulating film, and a second conductive film.
20240321913. IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Junghyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jonghoon PARK of Suwon-si (KR) for samsung electronics co., ltd., Yunki LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/14623
Abstract: an image sensor may include four unit pixels constituting a shared pixel in a 2*2 structure; and a deep trench isolation (dti) structure isolating the four unit pixels from each other. the dti structure may include an inner dti structure inside the shared pixel and an outer dti structure surrounding the shared pixel. the inner dti structure may include a first dti structure passing through a center of the shared pixel and extending in a first direction or a second direction and a second dti structure extending toward the center of the shared pixel in a direction perpendicular to a direction in which the first dti structure extends. the shared pixel may include a dti center cut (dcc) region between the first dti structure and the second dti structure in a direction in which the second dti structure extends.
Inventor(s): Tae Jin CHOI of Suwon-si (KR) for samsung electronics co., ltd., Hyeong-Ju KIM of Suwon-si (KR) for samsung electronics co., ltd., Daiki MINAMI of Suwon-si (KR) for samsung electronics co., ltd., Kyung Bae PARK of Suwon-si (KR) for samsung electronics co., ltd., Jeong Il PARK of Suwon-si (KR) for samsung electronics co., ltd., Hiromasa SHIBUYA of Suwon-si (KR) for samsung electronics co., ltd., Jeoung In YI of Suwon-si (KR) for samsung electronics co., ltd., Younhee LIM of Suwon-si (KR) for samsung electronics co., ltd., Hyerim HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146, C07D409/14, C07D421/14, C07D491/048, C07D491/16, C07D495/04, C07D495/16, C07D517/04, C07D517/16, C07F7/08, H10K59/65
CPC Code(s): H01L27/14623
Abstract: provided is a compound represented by any one of chemical formulas 1 to 3, and having a molecular packing density of greater than or equal to about 1.55 molecules/nmand photoelectric devices, light absorption sensors, sensor-embedded display panels, and electronic devices including the same.
Inventor(s): Tae Jin CHOI of Suwon-si (KR) for samsung electronics co., ltd., Hyeong-Ju KIM of Suwon-si (KR) for samsung electronics co., ltd., Daiki MINAMI of Suwon-si (KR) for samsung electronics co., ltd., Kyung Bae PARK of Suwon-si (KR) for samsung electronics co., ltd., Jeong Il PARK of Suwon-si (KR) for samsung electronics co., ltd., Hiromasa SHIBUYA of Suwon-si (KR) for samsung electronics co., ltd., Jeoung In YI of Suwon-si (KR) for samsung electronics co., ltd., Younhee LIM of Suwon-si (KR) for samsung electronics co., ltd., Hyerim HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146, C07D409/14, C07D421/14, C07D491/048, C07D491/16, C07D495/04, C07D495/16, C07D517/04, C07D517/16, C07F7/08, H10K59/65
CPC Code(s): H01L27/14623
Abstract:
Inventor(s): Tae Jin CHOI of Suwon-si (KR) for samsung electronics co., ltd., Hyeong-Ju KIM of Suwon-si (KR) for samsung electronics co., ltd., Daiki MINAMI of Suwon-si (KR) for samsung electronics co., ltd., Kyung Bae PARK of Suwon-si (KR) for samsung electronics co., ltd., Jeong Il PARK of Suwon-si (KR) for samsung electronics co., ltd., Hiromasa SHIBUYA of Suwon-si (KR) for samsung electronics co., ltd., Jeoung In YI of Suwon-si (KR) for samsung electronics co., ltd., Younhee LIM of Suwon-si (KR) for samsung electronics co., ltd., Hyerim HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146, C07D409/14, C07D421/14, C07D491/048, C07D491/16, C07D495/04, C07D495/16, C07D517/04, C07D517/16, C07F7/08, H10K59/65
CPC Code(s): H01L27/14623
Abstract: in chemical formulas 1 to 3, the definition of each substituent is as described in the specification.
Inventor(s): Seounghyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Changhyo KOO of Suwon-si (KR) for samsung electronics co., ltd., Sangchun PARK of Suwon-si (KR) for samsung electronics co., ltd., Kwanghee LEE of Suwon-si (KR) for samsung electronics co., ltd., Wook LEE of Suwon-si (KR) for samsung electronics co., ltd., Haeyeon CHUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/1463
Abstract: provided is an image sensor including a device isolation structure. the image sensor includes a semiconductor substrate including a pixel array including a plurality of pixels, a first photoelectric conversion device and a second photoelectric conversion device inside the semiconductor substrate and included in each of the plurality of pixels, microlenses on the first photoelectric conversion device and the second photoelectric conversion device and a device isolation structure between the plurality of pixels and between the first photoelectric conversion device and the second photoelectric conversion device, the device isolation structure opening a part between the first photoelectric conversion device and the second photoelectric conversion device, including an open region at each edge of the plurality of pixels, and may be continuous in the pixel array.
Inventor(s): Sangchun PARK of Suwon-si (KR) for samsung electronics co., ltd., Sungsoo CHOI of Suwon-si (KR) for samsung electronics co., ltd., Seounghyun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/1463
Abstract: a pixel includes a semiconductor substrate including a first surface and a second surface, a plurality of photoelectric conversion regions between the first surface and the second surface of the semiconductor substrate, one or more floating diffusion regions on the first surface of the semiconductor substrate and spaced apart from the plurality of photoelectric conversion regions; a plurality of vertical transmission gates configured to surround a path of charges transferred from each photoelectric conversion region of the plurality of photoelectric conversion regions to the one or more floating diffusion regions; a floating diffusion region connection pad on the one or more floating diffusion regions; and a metal contact connected to the floating diffusion region connection pad.
20240321923. IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Haeyeon CHUNG of Suwon-si (KR) for samsung electronics co., ltd., Sangcheon PARK of Suwon-si (KR) for samsung electronics co., ltd., Sungyong YOU of Suwon-si (KR) for samsung electronics co., ltd., Sungsoo CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146, H04N25/704
CPC Code(s): H01L27/1463
Abstract: an image sensor includes a substrate including a first pixel, a second pixel, a device isolation pattern, and at least one open region, wherein each of the first pixel and the second pixel includes a first pixel region including a first photoelectric conversion device and a second pixel region including a second photoelectric conversion device, the second pixel region being parallel with the first pixel region in a first direction, and wherein the device isolation pattern includes a first portion between the first pixel region and the second pixel region of the first pixel and between the first pixel region and the second pixel region of the second pixel, a second portion between the first pixel region of the first pixel and the first pixel region of the second pixel, and a third portion between the second pixel region of the first pixel and the second pixel region of the second pixel.
20240321926. IMAGE SENSORS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Masato FUJITA of Suwon-si (KR) for samsung electronics co., ltd., Jaewoong KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/14634
Abstract: an image sensor includes: a first stack including: a first semiconductor substrate including a first surface and a second surface opposite to the first surface, a photoelectric conversion region in the first semiconductor substrate, and a floating diffusion region in the first semiconductor substrate, the floating diffusion region being configured to store charges transferred from the photoelectric conversion region; a second stack including: a second semiconductor substrate including a first surface and a second surface opposite the first surface, and a transmission gate penetrating through the second semiconductor substrate and extending into the first stack; and an insulation layer between the first stack and the second stack.
20240321930. IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jeongsoon Kang of Suwon-si (KR) for samsung electronics co., ltd., Gyunha Park of Suwon-si (KR) for samsung electronics co., ltd., Daehoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Jongeun Park of Suwon-si (KR) for samsung electronics co., ltd., Gwideokryan Lee of Suwon-si (KR) for samsung electronics co., ltd., Dongseok Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/14636
Abstract: provided is an image sensor including a first substrate including a first surface to which light is incident and a second surface opposite the first surface, a second substrate facing the second surface of the first substrate, a wiring layer between the first substrate and the second substrate and including an insulating layer and a conductive structure in the insulating layer, a first floating diffusion region provided in the first substrate, a first through electrode penetrating through the second substrate and electrically connected to the first floating diffusion region through the conductive structure, a second floating diffusion region provided in the second substrate, and a landing pad arranged on a bottom surface of the second substrate and electrically connected to the second floating diffusion region, wherein a bottom surface of the first through electrode may be in contact with the landing pad.
20240321938. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Cheoljin Cho of Suwon-si (KR) for samsung electronics co., ltd., Yukyung Shin of Suwon-si (KR) for samsung electronics co., ltd., Jieun Lee of Suwon-si (KR) for samsung electronics co., ltd., Hanjin Lim of Suwon-si (KR) for samsung electronics co., ltd., Changhwa Jung of Suwon-si (KR) for samsung electronics co., ltd., Jayun Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H01L28/55
Abstract: a semiconductor device includes a lower electrode disposed on a substrate; a dielectric layer covering the lower electrode; and an upper electrode spaced apart from the lower electrode. the dielectric layer is disposed between the upper electrode and the lower electrode. a thickness of the dielectric layer is less than or equal to 6 nm, and a grain size in the dielectric layer is between 3 nm and 30 nm.
20240321940. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hyungjun Kim of Suwon-si (KR) for samsung electronics co., ltd., Sangwuk Park of Suwon-si (KR) for samsung electronics co., ltd., Hyunchul Yoon of Suwon-si (KR) for samsung electronics co., ltd., Jungpyo Hong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01G4/30
CPC Code(s): H01L28/60
Abstract: a semiconductor device including a substrate and a capacitor structure arranged on the substrate. the capacitor structure includes a plurality of lower electrodes extending in a vertical direction perpendicular to a surface of the substrate and spaced apart from each other, supporters arranged between the plurality of lower electrodes, an upper electrode spaced apart from each of the plurality of lower electrodes, a dielectric layer arranged between each of the lower electrodes and the upper electrode, and a plurality of particles each in contact with the dielectric layer and arranged between each of the plurality of lower electrodes and the upper electrode.
Inventor(s): Intak JEON of Suwon-si (KR) for samsung electronics co., ltd., Beomjong KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H01L28/60
Abstract: an integrated circuit semiconductor device includes lower electrodes on a substrate, and a support structure supporting the lower electrodes around the lower electrodes. the support structure includes a first support structure supporting lower portions of the lower electrodes, a second support structure apart from the first support structure in a vertical direction perpendicular to the substrate and supporting middle portions of the lower electrodes, and a third support structure apart from the second support structure in the vertical direction perpendicular to the substrate and supporting node portions of the lower electrodes. each of the first support structure, the second support structure, and the third support structure includes a support pattern and additional holes formed through the support pattern. the support pattern extends in a horizontal direction parallel to the substrate and surrounds the lower electrodes. the support pattern includes holes through which the lower electrodes pass.
20240321943. SEMICONDUCTOR MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jungmin Park of Suwon-si (KR) for samsung electronics co., ltd., Hanjin Lim of Suwon-si (KR) for samsung electronics co., ltd., Hyungsuk Jung of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H01L28/75
Abstract: a semiconductor memory device includes an upper electrode, a lower electrode, an anti-ferroelectric layer disposed between the upper electrode and the lower electrode and including an anti-ferroelectric, an oxide layer disposed on a first surface of the anti-ferroelectric layer and including a high dielectric material, and a metal oxide layer disposed on a second surface of the anti-ferroelectric layer opposite to the first surface. a thickness of each of the oxide layer and the metal oxide layer is less than a thickness of the anti-ferroelectric layer.
20240321956. INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Woosuk Choi of Suwon-si (KR) for samsung electronics co., ltd., Beomjin Park of Suwon-si (KR) for samsung electronics co., ltd., Myunggil Kang of Suwon-si (KR) for samsung electronics co., ltd., Dongwon Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyumin Yoo of Suwon-si (KR) for samsung electronics co., ltd., Soojin Jeong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L27/088, H01L29/08, H01L29/423, H01L29/66, H01L29/775, H01L29/786
CPC Code(s): H01L29/0665
Abstract: an integrated circuit device includes a fin-type active region that protrudes from a substrate and extends in a first horizontal direction, a plurality of nanosheets disposed on the fin-type active region and separated from each other in the vertical direction, a gate line that extends in a second horizontal direction and that surrounds the plurality of nanosheets on the fin-type active region, and includes respective sub-gate portions between the plurality of nanosheets and a main gate portion above the uppermost layer of the plurality of nanosheets, a source/drain region disposed on the fin-type active region, adjacent to the gate line, and connected to the plurality of nanosheets, and a plurality of inner spacers interposed between the gate line and the source/drain region. the shapes of first inner spacers that face the sub-gate portions differ from the shape of a second inner spacer that faces the main gate portion.
20240321960. MULTI-STACK SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jinchan Yun of Suwon-si (KR) for samsung electronics co., ltd., Sungil Park of Suwon-si (KR) for samsung electronics co., ltd., Jaehyun Park of Suwon-si (KR) for samsung electronics co., ltd., Dongkyu Lee of Suwon-si (KR) for samsung electronics co., ltd., Kyuman Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L27/092, H01L29/08, H01L29/423, H01L29/66, H01L29/775, H01L29/786
CPC Code(s): H01L29/0673
Abstract: a multi-stack semiconductor device includes a substrate, a device isolation layer, first channels, first gate lines covering the first channel, extending in a second horizontal direction, and spaced apart from each other in the first horizontal direction, first source/drain areas arranged on both sides of each of the first channels in the first horizontal direction, a second channel arranged apart from the first gate line in the vertical direction over any one of the first gate lines, a second gate line, second source/drain areas, a third channel arranged apart from the second gate line in the vertical direction over the second gate line, a third gate line, third source/drain areas, and a first lower source/drain contact extending in the vertical direction and connected to each of the first source/drain area, the second source/drain area, and the third source/drain area.
20240321961. INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jongsu Kim of Suwon-si (KR) for samsung electronics co., ltd., Myunggil Kang of Suwon-si (KR) for samsung electronics co., ltd., Dongwon Kim of Suwon-si (KR) for samsung electronics co., ltd., Beomjin Park of Suwon-si (KR) for samsung electronics co., ltd., Inhyun Song of Suwon-si (KR) for samsung electronics co., ltd., Hyumin Yoo of Suwon-si (KR) for samsung electronics co., ltd., Yujin Jeon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L27/092, H01L29/08, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L29/0673
Abstract: an integrated circuit device includes, a first nano-sheet stack including a plurality of nano-sheets arranged on a fin-type active region extending in a first horizontal direction, a gate line extending in a second horizontal direction on the fin-type active region, a vertical structure contacting the plurality of nano-sheets, and a first gate dielectric layer disposed between the gate line and the plurality of nano-sheets and between the gate line and the vertical structure, wherein the gate line includes a first sub-gate portion disposed under each of the plurality of nano-sheets, the first gate dielectric layer includes a first portion disposed between the gate line and the plurality of nano-sheets, and a second portion disposed between the first sub-gate portion and the vertical structure, and a thickness of the second portion in the second horizontal direction is greater than a thickness of the first portion in the vertical direction.
Inventor(s): KANGUK KIM of Suwon-si (KR) for samsung electronics co., ltd., DALHYEON LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/417
CPC Code(s): H01L29/41725
Abstract: an integrated circuit device includes a substrate including a plurality of active regions that include a first active region and a second active region that is adjacent to the first active region, a bit line that extends on the substrate in a horizontal direction, a first direct contact connected to the first active region, a second direct contact between the first direct contact and the bit line, an inner nitride film connected to a sidewall of the first direct contact and a sidewall of the second direct contact, an isolation film between the first active region and the second active region, and an outer oxide film that is connected to at least one surface of the second active region and between the inner nitride film and the second active region.
20240321979. INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Davin LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyunseung SONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/417, H01L27/092, H01L29/06, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L29/41733
Abstract: an integrated circuit device includes: a substrate including a first and second device regions; a first and third fin-type active regions extending in a first direction in the first device region; a second and fourth fin-type active regions extending in the first direction in the second device region; a gate line extending in a second direction crossing the first direction in the first through fourth fin-type active regions; a first source/drain region adjacent to the gate line in the first fin-type active region; a second source/drain region adjacent to the gate line in the second fin-type active region; a first source/drain contact connected to the first source/drain region; and a second source/drain contact connected to the second source/drain region; wherein the first source/drain contact includes a first short metal plug and a first conductive barrier layer at least partially surrounding a portion of sidewalls of the first short metal plug.
Inventor(s): Doohyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Heonjong SHIN of Suwon-si (KR) for samsung electronics co., ltd., Jaehyun KANG of Suwon-si (KR) for samsung electronics co., ltd., Seonbae KIM of Suwon-si (KR) for samsung electronics co., ltd., Wangseop LIM of Suwon-si (KR) for samsung electronics co., ltd., Seunghyun HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/417, H01L29/06, H01L29/08, H01L29/40, H01L29/423, H01L29/66, H01L29/775
CPC Code(s): H01L29/41733
Abstract: an integrated circuit device includes a substrate having a main surface and fin-type active regions protruding in a vertical direction from the main surface and extending lengthwise in a first horizontal direction, gate lines extending parallel to one another in a second horizontal direction perpendicular to the first horizontal direction and crossing the fin-type active regions, source/drain regions on the fin-type active regions between the gate lines, an inter-gate insulation layer covering the source/drain regions between the gate lines, active contacts on and in contact with the source/drain regions, and a buried insulation block between adjacent ones of the source/drain regions in the second horizontal direction, the buried insulation block penetrating through at least a portion of the inter-gate insulation layer and having a top surface in contact with a first active contact of the active contacts.
20240321983. INTEGRATED CIRCUIT DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jongryeol Yoo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/417, H01L27/088, H01L29/06, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L29/41775
Abstract: an integrated circuit device may include a fin-type active region that protrudes from a substrate and extends in a first direction, a plurality of semiconductor patterns on the fin-type active region and separated from each other in a vertical direction, a gate line on the fin-type active region, the gate line surrounding the semiconductor patterns and extending in a second direction that intersects the first direction, a source/drain region on the fin-type active region, adjacent to the gate line and connected to the semiconductor patterns, wherein the source/drain region includes a first semiconductor layer contacting the semiconductor patterns and including a semiconductor material including a first element including at least one selected from the group consisting of fluorine, oxygen, argon, and nitrogen, and an inner spacer between the source/drain region and the gate line and including an oxide including the first element or a nitride including the first element.
20240321989. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Gunho JO of Suwon-si (KR) for samsung electronics co., ltd., Heesub KIM of Suwon-si (KR) for samsung electronics co., ltd., Seunghyun LIM of Suwon-si (KR) for samsung electronics co., ltd., Bomi KIM of Suwon-si (KR) for samsung electronics co., ltd., Eunho CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/423, H01L29/06, H01L29/417, H01L29/66, H01L29/775
CPC Code(s): H01L29/42392
Abstract: a semiconductor device includes a substrate, an active pattern including a lower pattern extending in a first direction and a plurality of sheet patterns above an upper surface of the lower pattern and spaced apart from the lower pattern in a second direction substantially perpendicular to the first direction, a gate structure on the lower pattern and including a gate electrode and a gate insulating film, the gate electrode and the gate insulating film at least partially surrounding the plurality of sheet patterns, a first gate capping pattern on the gate structure and above the plurality of sheet patterns in the second direction, a gate spacer extending along a side wall of the gate structure, and a second gate capping pattern extending along an upper surface of the gate structure and an upper surface of the first gate capping pattern.
20240321991. INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Ingeon Hwang of Suwon-si (KR) for samsung electronics co., ltd., Jinbum Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyojin Kim of Suwon-si (KR) for samsung electronics co., ltd., Sangmoon Lee of Suwon-si (KR) for samsung electronics co., ltd., Yongjun Nam of Suwon-si (KR) for samsung electronics co., ltd., Taehyung Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/423, H01L27/088, H01L29/06, H01L29/08, H01L29/66, H01L29/775, H01L29/786
CPC Code(s): H01L29/42392
Abstract: an integrated circuit device includes a fin-type active region on a substrate, a nanosheet on a fin top surface of the fin-type active region, the nanosheet being apart from the fin top surface of the fin-type active region in a vertical direction, a gate line surrounding the nanosheet on the fin-type active region, and a source/drain region on the fin-type active region, the source/drain region being in contact with the nanosheet, wherein the nanosheet includes a multilayered sheet comprising a first outer semiconductor sheet, a core semiconductor sheet, and a second outer semiconductor sheet, which are sequentially stacked in the vertical direction.
20240321992. INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Seungpyo HONG of Suwon-si (KR) for samsung electronics co., ltd., Beomjin PARK of Suwon-si (KR) for samsung electronics co., ltd., Junggil YANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/423, H01L29/06, H01L29/08, H01L29/66, H01L29/775
CPC Code(s): H01L29/42392
Abstract: an integrated circuit device includes fin-type active regions extending in a first lateral direction on a substrate, a device isolation film covering sidewalls of the fin-type active regions, a gate line on the fin-type active regions and the device isolation film, nanosheet stacks on a fin top surface of each of the fin-type active regions, each nanosheet stack including at least one nanosheet and being surrounded by the gate line, a gate cut insulating portion on the device isolation film and facing an end sidewall of the gate line in a second lateral direction, and a corner insulating spacer between a first nanosheet stack of the nanosheet stacks and the gate cut insulating portion and between the device isolation film and the gate line, the first nanosheet stack being closest to the gate cut insulating portion in the second lateral direction.
Inventor(s): Jiho YOO of Suwon-si (KR) for samsung electronics co., ltd., Kihyung KO of Suwon-si (KR) for samsung electronics co., ltd., Jihoon CHA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/66, H01L29/06, H01L29/40, H01L29/417, H01L29/423, H01L29/775
CPC Code(s): H01L29/66439
Abstract: a method of manufacturing an integrated circuit device includes forming, on a substrate, a fin-type active region and a stack structure in which sacrificial semiconductor layers and nanosheet semiconductor layers are alternately stacked one-by-one, forming a first local liner on a sidewall of the stack structure to cover a sidewall of a bottom sacrificial semiconductor layer, which is closest to the fin-type active region and expose sidewalls of other sacrificial semiconductor layers, forming a second local liner on the sidewall of the stack structure to cover the sidewalls of the other sacrificial semiconductor layers except for the bottom sacrificial semiconductor layer, exposing the bottom sacrificial semiconductor layer by removing the first local liner, forming a bottom insulating space exposing a fin top surface of the fin-type active region by removing the bottom sacrificial semiconductor layer, and forming a bottom insulating structure in the bottom insulating space.
20240322012. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Byeonghee Son of Suwon-si (KR) for samsung electronics co., ltd., Myunggil Kang of Suwon-si (KR) for samsung electronics co., ltd., Dongwon Kim of Suwon-si (KR) for samsung electronics co., ltd., Jongsu Kim of Suwon-si (KR) for samsung electronics co., ltd., Changwoo Noh of Suwon-si (KR) for samsung electronics co., ltd., Beomjin Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/66, H01L29/06, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L29/66553
Abstract: a semiconductor device including an active region extending in a first horizontal direction, a nanosheet stack apart from the active region, a plurality of gate structures extending in a second horizontal direction and including a plurality of gate electrodes, a plurality of source/drain regions arranged on sidewalls of the gate structures, and a device isolation layer extending in a vertical direction, wherein the plurality of gate structures include a first gate structure in which a source/drain region is arranged on one sidewall and the device isolation layer is arranged on the other sidewall, and a second gate structure in which source/drain regions are arranged on both sidewalls, wherein the plurality of gate electrodes of the first gate structure include a main gate electrode positioned at the uppermost end and a plurality of sub-gate electrodes, and an internal spacer is between the device isolation layer and the plurality of sub-gate electrodes.
20240322039. INTEGRATED CIRCUIT DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hyojin Kim of Suwon-si (KR) for samsung electronics co., ltd., Jinbum Kim of Suwon-si (KR) for samsung electronics co., ltd., Sangmoon Lee of Suwon-si (KR) for samsung electronics co., ltd., Yongjun Nam of Suwon-si (KR) for samsung electronics co., ltd., Ingeon Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/78, H01L29/423, H01L29/66, H01L29/775, H01L29/786
CPC Code(s): H01L29/7848
Abstract: the integrated circuit device includes a fin-type active region extending in a first direction, a channel region on the fin-type active region, a gate line on the channel region and extending in a second direction, and a source/drain region on the fin-type active region and in contact with the channel region, wherein the source/drain region includes a plurality of semiconductor layers including a first semiconductor layer that includes a portion in contact with the channel region and a portion in contact with the fin-type active region, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer, a germanium (ge) content ratio in the first semiconductor layer is greater than or equal to 10 at % and less than 100 at %, and the ge content ratio in the first semiconductor layer decreases towards a boundary with the second semiconductor layer.
20240322043. INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): WOOYEOL MAENG of SUWON-SI (KR) for samsung electronics co., ltd., CHANGKI BAEK of POHANG-SI (KR) for samsung electronics co., ltd., KANGWOOK PARK of SUWON-SI (KR) for samsung electronics co., ltd., HYANGWOO KIM of POHANG-SI (KR) for samsung electronics co., ltd., KYOUNGHWAN OH of POHANG-SI (KR) for samsung electronics co., ltd., HYUNGJIN LEE of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/78, H01L29/40, H01L29/49, H01L29/66
CPC Code(s): H01L29/7856
Abstract: an integrated circuit device includes a fin body, a source and a drain disposed on the fin body, a channel disposed in the fin body between the source and the drain, a drain extension region disposed in the fin body between the drain and the channel, a gate insulating film disposed on the channel and the drain extension region, a high-permittivity layer disposed on the gate insulating film over the drain extension region, and a double gate including a first gate disposed on the gate insulating film above the channel adjacent to the source and a second gate in contact with the first gate. a first work function of the first gate is greater than a second work function of the second gate.
20240322048. INTERGRATED CIRCUIT DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kyunghwan LEE of Suwon-si (KR) for samsung electronics co., ltd., Jeonil LEE of Suwon-si (KR) for samsung electronics co., ltd., Minhee CHO of Suwon-si (KR) for samsung electronics co., ltd., Daweon HA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/792, H10B12/00
CPC Code(s): H01L29/7926
Abstract: provided is an integrated circuit device including a source line extending in a first horizontal direction on a substrate, a channel layer extending in a vertical direction, disposed on the source line, and having a first sidewall and a second sidewall, a trapping layer on the first sidewall of the channel layer and including an oxide semiconductor, a word line on at least one sidewall of the trapping layer and extending in a second horizontal direction crossing the first horizontal direction, a gate insulation layer between the at least one sidewall of the trapping layer and the word line, and a bit line electrically connected to the channel layer and extending in the first horizontal direction, wherein the channel layer has a first bandgap energy, and the trapping layer has a second bandgap energy that is greater than the first bandgap energy.
20240322051. OUTPUT CIRCUIT FOR SPAD_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Tze Ching FUNG of Diamond Bar CA (US) for samsung electronics co., ltd., Yibing Michelle WANG of Temple City CA (US) for samsung electronics co., ltd., Hongyu WANG of South Pasadena CA (US) for samsung electronics co., ltd., Eunchul KANG of South Pasadena CA (US) for samsung electronics co., ltd.
IPC Code(s): H01L31/02, H01L27/146, H01L31/107
CPC Code(s): H01L31/02027
Abstract: an output circuit for a single-photon avalanche diode. in some embodiments, a system includes: a first sensing element; a bus line; a first pull-down circuit; a first pull-up element; and a second pull-up element, the first pull-up element, the second pull-up element, and the first pull-down circuit being connected to the bus line, the first pull-down circuit being connected to the first sensing element and configured to be activated based on a signal from the first sensing element, the first pull-up element having a lower drive strength than the first pull-down circuit.
Inventor(s): Youngtek OH of Suwon-si (KR) for samsung electronics co., ltd., Dongho KIM of Suwon-si (KR) for samsung electronics co., ltd., Joonyong PARK of Suwon-si (KR) for samsung electronics co., ltd., Junsik HWANG of Suwon-si (KR) for samsung electronics co., ltd., Dongkyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Sanghoon SONG of Suwon-si (KR) for samsung electronics co., ltd., Minchul YU of Suwon-si (KR) for samsung electronics co., ltd., Kyungwook HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L33/00, H01L21/67, H01L21/673
CPC Code(s): H01L33/005
Abstract: a micro semiconductor chip transfer method is provided and includes: preparing a transfer substrate including an upper portion having grooves formed therein; supplying, to the upper portion of the transfer substrate, a suspension including micro semiconductor chips and a liquid; and aligning the micro semiconductor chips in the grooves by sweeping, with an alignment bar that includes a hydrophobic wiper, an upper surface of the transfer substrate while the suspension is on the upper surface of the transfer substrate.
Inventor(s): Kyungwook HWANG of Suwon-si (KR) for samsung electronics co., ltd., Junsik HWANG of Suwon-si (KR) for samsung electronics co., ltd., Hakyeol KIM of Hwaseong-si (KR) for samsung electronics co., ltd., Jaewook PARK of Hwaseong-si (KR) for samsung electronics co., ltd., Sanghoon SONG of Suwon-si (KR) for samsung electronics co., ltd., Jungwoon SHIN of Hwaseong-si (KR) for samsung electronics co., ltd., Keunsik LEE of Hwaseong-si (KR) for samsung electronics co., ltd., Eungyeong LEE of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L33/62, H01L25/16, H01L33/38
CPC Code(s): H01L33/62
Abstract: a display device having a perpendicular electrode structure and a method of manufacturing the display device are provided. the display device includes a display substrate including wiring therein, a first pad provided on the display substrate and connected to the wiring, a second pad provided on the display substrate, spaced apart from the first pad, and connected to the wiring, and a micro-semiconductor chip including a first electrode, a p-type semiconductor layer provided on the first electrode, an active layer provided on the p-type semiconductor layer, an n-type semiconductor layer provided on the active layer, and a second electrode provided on the n-type semiconductor layer, wherein the micro-semiconductor chip is constituted by a perpendicular electrode chip, the first electrode is connected to the first pad, and the second electrode is connected to the second pad.
Inventor(s): Gunbae LIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Yongsang YUN of Gyeonggi-do (KR) for samsung electronics co., ltd., Seongjin PARK of Gyeonggi-do (KR) for samsung electronics co., ltd., Jaebong CHUN of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q1/22, H01Q1/18
CPC Code(s): H01Q1/2266
Abstract: according to certain embodiments of the present disclosure, an electronic device comprises: a display panel; a first housing in which the display panel is disposed; an input module; a second housing in which the input module is disposed, wherein the first housing is configured to be rotatable with respect to the second housing via a hinge module. the hinge module is fixably coupled to the second housing to rotate the first housing along a rotation axis of the first housing. an antenna unit is connected to at least a part of the rotation axis of the hinge module, wherein the antenna unit may include: a connector connected to the at least one part of the rotation axis; an antenna module connected to the connector and rotatable with respect to the connector on the rotation axis; and a weight connected to at least a portion of the antenna module and to maintain a radiation surface of the antenna module level substantially vertical with respect to the ground.
Inventor(s): Donguk CHOI of Suwon-si (KR) for samsung electronics co., ltd., Yongjoo SHIN of Suwon-si (KR) for samsung electronics co., ltd., Jeonghoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Yoseb OH of Suwon-si (KR) for samsung electronics co., ltd., Jaebong CHUN of Suwon-si (KR) for samsung electronics co., ltd., Inyoung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q1/27, H01Q1/38, H01Q7/00
CPC Code(s): H01Q1/273
Abstract: according to various embodiments, a wearable electronic device includes: a housing, a first conductive pattern disposed in an internal space of the housing, at least one second conductive pattern disposed within a specified distance of the first conductive pattern, a wireless communication circuit disposed in the internal space and configured to transmit and/or receive a radio signal in a designated frequency band through the first conductive pattern, and a touch sensor module disposed in the internal space and configured to detect a touch on the housing through the first conductive pattern. the second conductive pattern may be disposed at a position capable of being capacitively coupled with the first conductive pattern upon the touch.
Inventor(s): Jinsu Park of Suwon-si (KR) for samsung electronics co., ltd., Dongjoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Yusik Jo of Suwon-si (KR) for samsung electronics co., ltd., Kunpil Jung of Suwon-si (KR) for samsung electronics co., ltd., Woonhyung Heo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01R13/66, G01N27/04
CPC Code(s): H01R13/6683
Abstract: an electronic device includes a connector connected to a cable of an external device and including a plurality of pins, a water detection circuit connected to at least one detection pin among the plurality of pins, and configured to detect, based on the at least one detection pin, whether water exists in the connector, a connection sensing circuit connected to at least one sensing pin among the plurality of pins, and configured to recognize the cable, based on the at least one sensing pin, and an application processor (ap) configured to control the water detection circuit and the connection sensing circuit such that detection of the water and recognition of the cable are performed simultaneously.
Inventor(s): Dohyeon KIM of Suwon-si (KR) for samsung electronics co., ltd., Yusu KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02J50/10, H02J7/00, H02J50/80
CPC Code(s): H02J50/10
Abstract: an electronic device is configured to enable a power transmission circuit to transmit a first signal to an external electronic device through the charging coil by using a driving signal having a first frequency, to identify whether information indicating a modulation depth of a voltage output from a rectifier circuit of the external electronic device is received from the external electronic device, and to determine whether to adjust the frequency of the driving signal from the first frequency to a second frequency different from the first frequency, based on whether the information is received.
Inventor(s): Beomwoo GU of Suwon-si (KR) for samsung electronics co., ltd., Jaeseok PARK of Suwon-si (KR) for samsung electronics co., ltd., Jaehyun PARK of Suwon-si (KR) for samsung electronics co., ltd., Jaesun SHIN of Suwon-si (KR) for samsung electronics co., ltd., Sungku YEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02J50/12
CPC Code(s): H02J50/12
Abstract: an electronic device is provided. the electronic device includes a processor, a battery, and a wireless power transmission device, wherein the wireless power transmission device includes a power amplifier circuit including a switch circuit, a filter circuit, and a series resonant circuit, the power amplifier circuit being configured to convert direct current (dc) power received from the battery or a dc adapter into alternative current (ac) and to implement zero-voltage switching (zvs), a power transmission circuit including a power transmission coil configured to transmit power received from the power amplifier circuit to outside, a matching circuit located between and connected to the power amplifier circuit and the power transmission circuit, the matching circuit being configured to match an impedance of the power amplifier circuit and the power transmission circuit, and a negative voltage detection circuit connected to the filter circuit of the power amplifier circuit and configured to detect a negative voltage generated in the filter circuit, and wherein the negative voltage detection circuit includes a voltage dividing circuit including a positive voltage power supply and a plurality of resistors, the voltage dividing circuit being configured to convert the negative voltage generated in the filter circuit of the power amplifier circuit into a positive voltage in a predetermined range, a voltage sensor configured to detect the positive voltage, and a low-pass filter located between and connected to the voltage dividing circuit and the voltage sensor.
Inventor(s): Hyomin AHN of Suwon-si (KR) for samsung electronics co., ltd., Youngjae PARK of Suwon-si (KR) for samsung electronics co., ltd., Junghyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Taeho LEE of Suwon-si (KR) for samsung electronics co., ltd., Jehyung CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02M1/42, H02M1/00, H02M7/06
CPC Code(s): H02M1/4291
Abstract: a home appliance for controlling a harmonic magnitude includes a current sensor configured to detect an input current of a power source, and at least one processor, and the at least one processor is configured to obtain a harmonic component from the input current detected by the current sensor, determine a length of a non-conducting interval of a switch so that a magnitude of the obtained harmonic component is less than a predetermined harmonic reference value, and generate a current reference value corresponding to the determined length of the non-conducting interval.
Inventor(s): Ravindra Kumar SINGH of Bengaluru (IN) for samsung electronics co., ltd., Mihir Dhagat of Bengaluru (IN) for samsung electronics co., ltd., Subodh Prakash Talgor of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): H02M3/07, H02M1/38
CPC Code(s): H02M3/07
Abstract: the present disclosure relates to a charge pump circuit with a six-phase clock. the charge pump circuit comprises a six-phase clock circuit and a gate boosting charge pump configured to receive a plurality of clock signals from the six-phase clock circuit. the six-phase clock circuit includes provides a first clock signal, a second clock signal, a third clock signal, a fourth clock signal, a fifth clock signal, and a sixth clock signal. the gate boosting charge pump is configured to enable a charge-sharing operation to share the stored amount of charges between a plurality of parasitic capacitors. the six-phase clock circuit is configured to provide a dead time between each of the first, second, third, fourth, fifth and sixth clock.
Inventor(s): Shubham Raj Singh of Bengaluru (IN) for samsung electronics co., ltd., Ravindra Kumar Singh of Bengaluru (IN) for samsung electronics co., ltd., Subodh Prakash Taigor of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): H03B5/04, H03B5/24
CPC Code(s): H03B5/04
Abstract: an oscillator includes first and second comparators, a first impedance network having a first trim element therein, and a second impedance network having a second trim element therein. the first impedance network is electrically connected to a first input terminal of the first comparator, and the second impedance network is electrically connected to a first input terminal of the second comparator. the first and second impedance networks are configured to cause an improvement in common mode variation within the first and second comparators, in response to trimming of at least one of the first and second trim elements.
Inventor(s): Subba Reddy SIDDAMURTHY of Bengaluru (IN) for samsung electronics co., ltd., Aswani Aditya Kumar TADINADA of Bengaluru (IN) for samsung electronics co., ltd., Venkatasuryam Setty ISSA of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): H03B5/04, H03L7/099
CPC Code(s): H03B5/04
Abstract: a circuit for reducing a temperature-induced frequency drift in a voltage to current (v2i) converter based voltage-controlled oscillator (vco) for at least one wide band phase-locked loop (pll), the circuit includes a v2i resistor node of the v2i converter, the v2i resistor node being at one end of a resistor, the vco, and a current controlled oscillator (cco), and the circuit is configured to provide a fixed offset current to the v2i resistor node to cause at least one v2i output current to have a value conversely proportional to absolute temperature (ctat), the at least one v2i output current being output by the v2i converter, and mirror the at least one v2i output current to the cco to reduce the temperature-induced frequency drift at a lower frequency band of the vco.
Inventor(s): Yohan MOON of Suwon-si (KR) for samsung electronics co., ltd., Hyunsang KANG of Suwon-si (KR) for samsung electronics co., ltd., Hyoseok NA of Suwon-si (KR) for samsung electronics co., ltd., Dongil YANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H03F3/24, H04B1/04
CPC Code(s): H03F3/245
Abstract: an electronic device is provided. the electronic device includes: a first antenna, a second antenna, and a third antenna, a first power supply circuit, a second power supply circuit, a first front end module (fem) including a power amplifier (pa) connected to the first antenna and configured to operate based on a voltage from the first power supply circuit, a second fem including a pa connected to the second antenna and configured to operate based on a voltage from the second power supply circuit, a third fem including a pa connected to the third antenna and configured to operate based on the voltage from the first power supply circuit and the voltage from the second power supply circuit and obtain a transmit (tx) power in a range higher than a range of tx power obtained using each of the pa in the first fem and the pa in the second fem, and at least one processor.
Inventor(s): Mukul Agarwal of Bengaluru (IN) for samsung electronics co., ltd., Subodh Prakash Taigor of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): H03K5/24, H03K5/00
CPC Code(s): H03K5/249
Abstract: a method to control a clock speed of a dynamic comparator may include sensing, by a clock speed control circuit, an output of the dynamic comparator to determine at least one failure in the dynamic comparator. thereafter, the method may include reducing, by the clock speed control circuit, a frequency of a clock signal used to control the clock speed of the dynamic comparator, based on the determined at least one failure in the dynamic comparator.
Inventor(s): Kyoungtae KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B1/00, H01Q3/24, H04B7/06, H04B7/08
CPC Code(s): H04B1/0064
Abstract: in an electronic device and a method of operating an electronic device according to various embodiments, the electronic device may include an antenna. the electronic device may include at least one electronic component. the electronic device may include a switch configured to electrically connect the antenna and at least one of a first path connected to a first ground disposed on one layer of multiple layers of a printed circuit board and a second path connected to a second ground disposed on another layer of the multiple layers. the electronic device may include at least one communication processor, comprising processing circuitry, electrically connected to the switch. at least one communication processor, individually and/or collectively, may output a signal through the antenna in a first state in which the antenna is electrically connected to the first path; control, based on the at least one component being activated, the switch so that the switch is converted from the first state to a second state in which the antenna is electrically connected to the second path; and based on a specified time elapsing, control the switch so that the switch is converted from the second state to the first state.
Inventor(s): Jungsik KIM of Suwon-si (KR) for samsung electronics co., ltd., Dongki KIM of Suwon-si (KR) for samsung electronics co., ltd., Seongkyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyohyun NAM of Suwon-si (KR) for samsung electronics co., ltd., Daeyoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Chaejun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B1/04, H03F1/56, H03F3/21
CPC Code(s): H04B1/04
Abstract: a communication device configured to transmit/receive a radio frequency (rf) signal is provided. the device includes a transceiver including an amplifier device using a multi-loop inter-stage matching (ism) transformer, and a processor configured to control an operation of the amplifier based on a signal strength during transmission/reception of the rf signal. the transformer is disposed between a first amplifier and a second amplifier and includes a plurality of primary loops and a plurality of secondary loops, each primary loop includes an inductor component having a different size and a different q-factor and each secondary loop includes an inductor component having a different size and a different q-factor. the processor adjusts an attenuation level of the transformer by controlling a switching connection to the first amplifier and the second amplifier for one primary loop among the plurality of primary loops and one secondary loop among the plurality of secondary loops.
Inventor(s): Alexei Vladimirovich DAVYDOV of Moscow (RU) for samsung electronics co., ltd., Gregory Vladimirovich MOROZOV of Moscow (RU) for samsung electronics co., ltd., Dmitry Sergeyevich DIKAREV of Moscow (RU) for samsung electronics co., ltd., Gregory Aleksandrovich ERMOLAEV of Moscow (RU) for samsung electronics co., ltd.
IPC Code(s): H04B7/0413, H04L5/00
CPC Code(s): H04B7/0413
Abstract: the present disclosure relates to a 5g communication system or a 6g communication system for supporting higher data rates beyond a 4g communication system such as long term evolution (lte). a method is provided for allocating resources in the time domain, the method including in a downlink transmission part of a dl/ul-period of a frame allocating a preset number of adjacent ofdm-symbols for transmission of a pdcch, generating a bundle of time intervals comprising an integer number of adjacent time intervals, wherein each time interval includes a preset number of ofdm-symbols, wherein the pdcch relates to the entire bundle of time intervals, allocating a subbundle of ofdm-symbols to transmit a dmrs pattern which multiplexes dmrs signals for a required number of mimo layers of a pdsch, and allocating ofdm-symbols for transmission of the pdsch.
Inventor(s): Shouvik Ganguly of Frisco TX (US) for samsung electronics co., ltd., Young Han Nam of Plano TX (US) for samsung electronics co., ltd.
IPC Code(s): H04B7/06, H04B17/318
CPC Code(s): H04B7/0626
Abstract: methods and apparatuses for channel state information reference signal in wireless communication systems are provided. the methods of bs comprise: identifying first information corresponding to a number of antenna ports associated with transmissions of csi-rss; identifying, a first size of cdm groups associated with the number of antenna ports and a first shape of the cdm groups; identifying second information from the first information; identifying a starting sc index and a starting symbol index; identifying, based on the number of antenna ports associated with a csi-rs transmission and a predetermined frequency domain granularity of channel state information, a size of rb cluster for the resource allocation; and transmitting, to a ue, resource configuration information indicating at least one of the size of rb cluster, the first size of the cdm groups, the first shape of the cdm groups, the starting sc index, and the starting symbol index.
Inventor(s): Ruoxi ZHANG of Suzhou Industrial Park (CN) for samsung electronics co., ltd., Sishi WANG of Suzhou Industrial Park (CN) for samsung electronics co., ltd.
IPC Code(s): H04B7/08
CPC Code(s): H04B7/0817
Abstract: an antenna control method and device, a computer equipment and a computer-readable storage medium are provided. the antenna control method includes determining a number of receiving antennas currently in use, changing the number of receiving antennas currently in use, according to a predetermined condition. the predetermined condition is related to a rank indicator (ri) assigned by a network or reference signal receiving powers (rsrps) of the receiving antennas.
Inventor(s): Dongwook KIM of Suwon-si (KR) for samsung electronics co., ltd., Byuksun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jungseop KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B10/114
CPC Code(s): H04B10/1149
Abstract: a remote control device configured to control an electronic device including: a plurality of input keys; a signal transmitter; and a processor configured to: identify a time interval between a first radio signal and a second radio signal based on a length of the first radio signal, and based on one of the plurality of input keys being consecutively selected, control the signal transmitter to repeatedly output the second radio signal corresponding to the selected input key according to the identified time interval, where the first radio signal is configured to control an external electronic device communicating with the electronic device based on the second radio signal received from the remote control device.
Inventor(s): Seungri JIN of Suwon-si (KR) for samsung electronics co., ltd., Soenghun KIM of Suwon-si (KR) for samsung electronics co., ltd., Himke VAN DER VELDE of Staines (GB) for samsung electronics co., ltd.
IPC Code(s): H04B17/24, H04B17/345, H04L5/00, H04L27/26, H04W16/18, H04W24/10, H04W72/541
CPC Code(s): H04B17/24
Abstract: a method and apparatus for measuring and reporting cross-link interference are provided. the method includes receiving, from a base station (bs), a measurement configuration for the cli, performing measurement on the configured measurement object based on the measurement configuration for the cli and transmitting, to the bs, based on a measurement result of at least one of a resource from a plurality of resources for measuring the cli of the configured measurement object exceeding a threshold, a measurement report for all of the plurality of resources for measuring the cli of the configured measurement object whose measurement result exceeds the threshold.
Inventor(s): Gunyoung KO of Suwon-si (KR) for samsung electronics co., ltd., Dahae CHONG of Suwon-si (KR) for samsung electronics co., ltd., Beomkon KIM of Suwon-si (KR) for samsung electronics co., ltd., Joohyun DO of Suwon-si (KR) for samsung electronics co., ltd., Myungjoon SHIM of Suwon-si (KR) for samsung electronics co., ltd., Yujin SIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B17/318, H04W24/08
CPC Code(s): H04B17/328
Abstract: a user device for performing narrowband internet of things-based communication, the user device including processing circuitry configured to descramble narrowband physical broadcast channels (npbchs) respectively included in at least two frames to obtain at least two descrambled npbchs, the npbchs including identical data and having different phases from each other, and measure narrowband reference signal received power (nrsrp) based on the at least two descrambled npbchs.
Inventor(s): Alexei Vladimirovich DAVYDOV of Saratov (RU) for samsung electronics co., ltd., Dmitry Sergeyevich DIKAREV of Saratov (RU) for samsung electronics co., ltd., Gregory Aleksandrovich ERMOLAEV of Saratov (RU) for samsung electronics co., ltd., Gregory Vladimirovich MOROZOV of Saratov (RU) for samsung electronics co., ltd.
IPC Code(s): H04J13/00, H04L5/00, H04W72/0446, H04W72/0453, H04W72/20
CPC Code(s): H04J13/004
Abstract: the disclosure relates to wireless communications, and, in particular, to devices and methods for wireless communication using advanced demodulation reference signals (dmrss). a method by a user equipment (ue) in a wireless communication system is provided. the method includes receiving, by the ue from a base station, at least one configuration information associated with a demodulation reference signal (dmrs), identifying, by the ue, at least one of a code division multiplexing (cdm) group, a frequency domain (fd) orthogonal cover code (occ), and a time domain (td) occ for the dmrs based on the at least one configuration information; and receiving, by the ue from the base station, the dmrs based on the at least one of the cdm group, the fd occ, and the td occ, wherein a number of cdm groups is 4, wherein the fd occ includes at least one of (+1,+1,+1,+1), (+1,−j,+1,+j), (+1,−1,+1,−1), and (+1,+j,−1,−1), and wherein the td occ includes at least one of (+1,+1,+1,+1), (+1,−j,+1,+j), (+1,−1,+1,−1), and (+1,+j,−1,−1).
Inventor(s): Donghun LEE of Suwon-si (KR) for samsung electronics co., ltd., Seho MYUNG of Suwon-si (KR) for samsung electronics co., ltd., Kwonjong LEE of Suwon-si (KR) for samsung electronics co., ltd., Min JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L1/00, H04L25/06
CPC Code(s): H04L1/0003
Abstract: the present disclosure relates to a 5g communication system or a 6g communication system for supporting higher data rates beyond a 4g communication system such as long term evolution (lte). a method performed by a receiving node in a wireless communication system is provided. the method comprises receiving, from a transmitting node, a codeword comprising at least one information bit, estimating a bit value of a first information bit of the at least one information bit as a first estimation bit value, and determining whether a log-likelihood ratio (llr) indicating a probability ratio between bit values that are able to be estimated as the bit value of the first information bit is included in a first interval. in case that the llr is included in the first interval, the method further comprises determining the bit value of the first information bit as a first estimation bit value or a second estimation bit value which is different from the first estimation bit value, by comparing a reliability value determined based on the llr with at least one threshold.
Inventor(s): Alexei Vladimirovich DAVYDOV of Moscow (RU) for samsung electronics co., ltd., Gregory Vladimirovich MOROZOV of Moscow (RU) for samsung electronics co., ltd., Dmitry Sergeyevich DIKAREV of Moscow (RU) for samsung electronics co., ltd., Gregory Aleksandrovich ERMOLAEV of Moscow (RU) for samsung electronics co., ltd.
IPC Code(s): H04L5/00
CPC Code(s): H04L5/0051
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. specifically, the disclosure relates, in general, to an apparatus and a method for indicating demodulation reference signals (dmrs) ports for a user equipment (ue) in a wireless communication system are provided. the method performed in a base station which supports simultaneous transmission of a plurality of spatial multiple input multiple output (mimo) layers for data transmission, wherein a different dmrs port is associated with each of the plurality of mimo layers. the method comprises selecting a dmrs port group comprising c sequential dmrs port indices to be used in the ue from a total number m of sequential dmrs port indices available for being used in the ue, where c, m are positive integers, c≤m, obtaining a code point p which represents the selected dmrs port group, wherein the code point is determined as follows, if (c−1)≤m/2, then p=m�(c−1)+s, else p=m�(m−c+1)+(n−1−s), where s is a start dmrs port index in the selected dmrs port group, s=0, 1, . . . , c−1, and signaling, to the ue, control information, wherein the control information includes the obtained code point.
Inventor(s): Suha YOON of Suwon-si (KR) for samsung electronics co., ltd., Youngbum KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok RYU of Suwon-si (KR) for samsung electronics co., ltd., Seho MYUNG of Suwon-si (KR) for samsung electronics co., ltd., Euichang JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L5/00
CPC Code(s): H04L5/0053
Abstract: the present disclosure relates to a method performed by a base station of a wireless communication system and to an apparatus for performing same. the method may comprise the steps of: determining that a first bandwidth having a smaller size than a preconfigured bandwidth, is used in a frequency band operated by the base station; and transmitting, to a terminal configuration information for coreset having an index of 0, on the basis of the first bandwidth, wherein the coreset having an index of 0 may include a plurality of resource element groups (regs) to which a control channel element (cce) is mapped, and the cce may be mapped to the plurality of regs according to one of non-interleaved mapping and interleaved mapping using a number of resource blocks (rbs) included in the first bandwidth.
Inventor(s): Shiyang Leng of Allen TX (US) for samsung electronics co., ltd., Anil Agiwal of Allen TX (US) for samsung electronics co., ltd., Dalin Zhu of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): H04L5/00
CPC Code(s): H04L5/0091
Abstract: methods and apparatuses for a mac ce for multi-trp operation in a wireless communication system. a method of a ue comprises: receiving, from a bs belonging to a serving cell, a first mac pdu including a first mac subheader with a first elcid and a first mac ce; identifying, based on the first elcid, an enhanced unified tci states activation/deactivation mac ce for joint tci states or separate tci states including a bitmap of tci state id presence indications and tci state ids, wherein a bit in the bitmap of tci state id presence indications indicates, for the tci state ids associated with a codepoint of a dci tci field, whether a tci state for a trp is present in a corresponding mac ce, and a maximum number of the tci state ids that are activated is 32; and indicating, to lower layers, information associated with the corresponding mac ce.
Inventor(s): Michael Chung WANG of Southlake TX (US) for samsung electronics co., ltd., Neal HAYS of Cupertino CA (US) for samsung electronics co., ltd., Amir AMIRKHANY of Sunnyvale CA (US) for samsung electronics co., ltd.
IPC Code(s): H04L7/033, H03L7/08, H03L7/099
CPC Code(s): H04L7/033
Abstract: a system and method of clock and data recovery. in some embodiments, the method includes: setting a bias signal source to a first bias value, the bias signal source being connected to an input of a voltage-controlled oscillator of a clock and data recovery circuit; determining that a locked signal of a frequency feedback signal source equals a first feedback value; setting the bias signal source to a second bias value, different from the first bias value; determining that a locked signal of the frequency feedback signal source equals a second feedback value; determining that the second feedback value meets a termination criterion; and setting an operating value of the bias signal source to the second bias value.
Inventor(s): Jungyong Park of Suwon-si (KR) for samsung electronics co., ltd., Sebin Im of Suwon-si (KR) for samsung electronics co., ltd., Gyoungil Kwak of Suwon-si (KR) for samsung electronics co., ltd., Hongsik Yoon of Suwon-si (KR) for samsung electronics co., ltd., Jinho Kim of Suwon-si (KR) for samsung electronics co., ltd., Hoil Kim of Suwon-si (KR) for samsung electronics co., ltd., Huiwon Je of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L25/02, H04W48/10, H04W84/06
CPC Code(s): H04L25/0204
Abstract: an operation method of a user equipment based on non-terrestrial network (ntn) communication includes: performing channel estimation of a first broadcast channel included in a first frame; performing initial channel estimation of system information included in the first frame; performing channel estimation of a second broadcast channel included in a second frame which is subsequent to the first frame; determining a first weight corresponding to the system information, a second weight corresponding to the first broadcast channel, and a third weight corresponding to the second channel; and calculating a channel estimate of the system information based on results of the channel estimation of the first broadcast channel, the initial channel estimation of the system information and the channel estimation of the second broadcast channel, and the first weight through the third weight.
Inventor(s): Hongsik YOON of Suwon-si (KR) for samsung electronics co., ltd., Sebin IM of Suwon-si (KR) for samsung electronics co., ltd., Gyoungil KWAK of Suwon-si (KR) for samsung electronics co., ltd., Jungyong PARK of Suwon-si (KR) for samsung electronics co., ltd., Jinho KIM of Suwon-si (KR) for samsung electronics co., ltd., Hoil KIM of Suwon-si (KR) for samsung electronics co., ltd., Huiwon JE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L25/02, H04L5/00
CPC Code(s): H04L25/0214
Abstract: provided is an operation method of a user equipment performing narrowband internet of things-based communication, the operation method including determining a delayed distance based on at least one of a channel characteristic and a channel estimation technique-related coefficient, estimating, based on a time axis, a channel of a target subframe using reference signals of subframes from a start subframe prior to the target subframe to an end subframe corresponding to a determined delayed distance after the target subframe, and decoding the target subframe based on the estimated channel.
Inventor(s): Eunsung Jeon of Suwon-si (KR) for samsung electronics co., ltd., Chulho Chung of Suwon-si (KR) for samsung electronics co., ltd., Myeongjin Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L25/02, H04L5/00, H04W84/12
CPC Code(s): H04L25/0228
Abstract: in a wireless local area network (wlan) system including a first device and a second device, an operating method of the first device communicating with the second device via a channel includes collecting data related to a current state of the channel based on a signal received from the second device, predicting a probability of channel aging based on the data, and triggering a channel sounding process based on the prediction.
Inventor(s): Bokkeun KIM of Suwon-si (KR) for samsung electronics co., ltd., Gyeongsik KIM of Suwon-si (KR) for samsung electronics co., ltd., Yongjun PARK of Suwon-si (KR) for samsung electronics co., ltd., Jongsun OH of Suwon-si (KR) for samsung electronics co., ltd., Heonhyung LEE of Suwon-si (KR) for samsung electronics co., ltd., Jin KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeongyo JEONG of Suwon-si (KR) for samsung electronics co., ltd., Byounggeun CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jaehyuk CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L47/125, H04L43/0811, H04L47/127
CPC Code(s): H04L47/125
Abstract: an electronic device for a session management function (smf) may comprise memory storing instructions and at least one processor. the instructions may cause the electronic device to: obtain a first load value for a second time interval before selecting a serving user plane function (upf), estimated based on an artificial intelligence model (ai model) using first load information of each of upfs measured within a first time interval before the second time interval, obtain a second load value for the second time interval, calculated by using second load information of each of the upfs measured within the second time interval, determine a difference between the first load value and the second load value, and determine, using the difference, whether to use a predicted load value of each of the upfs obtained based on the ai model to select the serving upf from among the upfs.
Inventor(s): Jiyoung CHA of Suwon-si (KR) for samsung electronics co., ltd., Dongmyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Younggyoun MOON of Suwon-si (KR) for samsung electronics co., ltd., Jungsoo JUNG of Suwon-si (KR) for samsung electronics co., ltd., Sunwoo CHO of Suwon-si (KR) for samsung electronics co., ltd., Jinho CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L47/2425, H04W28/02
CPC Code(s): H04L47/2425
Abstract: the present disclosure relates to a 5th generation (5g) or 6th generation (6g) communication system for supporting a data transmission rate higher than that of a long term evolution (lte) communication system. the present disclosure relates to a method performed by means of a network node in a communication system, and the method may comprise the steps of: acquiring information about a packet-processing rule from a control plane network function; receiving an internet protocol (ip) packet through a data network, the ip packet including external quality of service (qos) information between a source node for the ip packet and the network node; generating, on the basis of the packet-processing rule and the external qos information, qos requirements for an ip flow including the ip packet; and allocating resources for the ip flow on the basis of the qos requirements.
Inventor(s): Deng MI of Jiangsu Province (CN) for samsung electronics co., ltd.
IPC Code(s): H04L9/40, H04W92/18
CPC Code(s): H04L63/108
Abstract: a method and terminal of applying for an authorization duration, computer equipment and storage medium are provided in the present disclosure. the method of applying for the authorization duration, comprises: acquiring a plurality of authorization durations for a plurality of authorization services in response to service authorizations of the plurality of authorization services being received; determining a periodic timer duration for acquiring the plurality of authorization services at one time, based on a minimum or lowest authorization duration among the plurality of authorization durations and a timer duration for applying for authorization in advance, the timer duration for applying for authorization being set by a user; starting a periodic timer set based on the periodic timer duration; applying for a plurality of new authorization durations for the plurality of authorization services in response to a timeout of the periodic timer.
Inventor(s): Hosung BAEK of Suwon-si (KR) for samsung electronics co., ltd., Shinsoo YUN of Suwon-si (KR) for samsung electronics co., ltd., Minkyo JUNG of Suwon-si (KR) for samsung electronics co., ltd., Jiyeon YOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L67/1004
CPC Code(s): H04L67/1004
Abstract: a method, device, and system for providing a load balancing algorithm according to an application are provided. the method includes calculating values of a plurality of application characteristics based on first service load information for a first application, evaluating a plurality of application impact scores for each of a plurality of load balancing algorithms, the plurality of application impact scores indicating a degree to which each of the plurality of application characteristics impacts each of the plurality of load balancing algorithms, and providing a first load balancing algorithm from among the plurality of load balancing algorithms based on the values of the plurality of application characteristics and the plurality of application impact scores.
Inventor(s): Byuksun KIM of Suwon-si (KR) for samsung electronics co., ltd., Dongwook KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04M1/72415
CPC Code(s): H04M1/72415
Abstract: an electronic device and method for providing a user interface to control a registered external device. the electronic device: establishes a communication connection with a mobile electronic device; scans for external devices connectable through wireless communication; and receives a topographical map generated through scanning by the mobile electronic device while the mobile electronic device is being moving and information about the scanned external devices. the electronic device matches external devices scanned by the mobile electronic device with the external devices scanned by the electronic device as being connectable through the wireless communication; registers external devices for which matching was successful; and displays, on a screen, a list of the registered external devices and a user interface to control the registered external devices, respectively.
Inventor(s): Pureuna Shin of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/103, H04N19/119, H04N19/423, H04N19/46, H04N19/503, H04N19/593, H04N19/91
CPC Code(s): H04N19/103
Abstract: a decoding device includes: an entropy decoder configured to decode a bitstream and generate prediction information and sequence information of each of the plurality of coding units; an inter predictor configured to perform inter prediction on each of inter coding units among the plurality of coding units based on the prediction information; an intra predictor configured to perform intra prediction on each of intra coding units among the plurality of coding units, based on the prediction information, and generate intra prediction data of each of the intra coding units; a memory for storing the inter prediction data of each of the inter coding units; and a reconstructor configured to reconstruct each of the inter coding units, based on the inter prediction data stored in the memory, and reconstruct each of the intra coding units based on the intra prediction data.
Inventor(s): Sungho Jun of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/184
CPC Code(s): H04N19/184
Abstract: provided are an image processing device and an operating method of the image processing device. an image processing device includes a multimedia intellectual property (ip) configured to process image data for pixels constituting one frame image, and an encoder configured to generate compressed data by performing compression on the image data, wherein the encoder includes a compression module and a first buffer. the compression module is configured to generate first compressed data by performing compression on the first image data including a most significant bit (msb) of the image data, and the first buffer is configured to store second image data containing a least significant bit (lsb) of the image data, in order to skip compression for the second image data.
Inventor(s): Seokhyun Lee of Seoul (KR) for samsung electronics co., ltd., Taesung Kim of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/423, H04N19/137, H04N19/159, H04N19/186, H04N19/593, H04N19/91
CPC Code(s): H04N19/423
Abstract: a video decoding apparatus includes a first buffer storing input data received from an entropy decoder, a first motion compensation processor extracting motion compensation reference data based on the input data, and store the motion compensation reference data in a pixel cache, a second buffer, and a controller. the input data comprises one of first data including motion information and second data including intra prediction information. the controller controls the second buffer to store the motion compensation reference data stored in the pixel cache when the input data is the first data, and controls the second buffer to store the second data stored in the first buffer when the input data is the second data.
Inventor(s): Seung-soo Jeong of Seoul (KR) for samsung electronics co., ltd., Min-woo Park of Yongin-si (KR) for samsung electronics co., ltd., Jin-Young Lee of Suwon-si (KR) for samsung electronics co., ltd., Sun-il Lee of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/52, H04N19/176
CPC Code(s): H04N19/52
Abstract: provided is a video decoding method performed by a video decoding apparatus, the video decoding method including: determining prediction mode information of a current block and an index indicating a prediction candidate, from a bitstream; determining a prediction candidate list according to the prediction mode information; when the prediction mode information of the current block indicates a pre-set prediction mode, determining a motion vector indicated by the index indicating the prediction candidate from the prediction candidate list, and determining a prediction motion vector of the current block based on at least one of pieces of motion prediction information related to the motion vector; and determining a motion vector of the current block based on the prediction motion vector, wherein the pre-set prediction mode is a prediction mode different from a skip mode and a merge mode.
Inventor(s): Anthony Sylvain Jean-Yves Liot of San Jose CA (US) for samsung electronics co., ltd., Anil Unnikrishnan of Dublin CA (US) for samsung electronics co., ltd., Sajid Sadi of San Jose CA (US) for samsung electronics co., ltd., Sandipan Banerjee of Boston MA (US) for samsung electronics co., ltd., Vignesh Gokul of Mountain View CA (US) for samsung electronics co., ltd., Janvi Chetan Palan of San Francisco CA (US) for samsung electronics co., ltd., Hyun Jae Kang of Mountain View CA (US) for samsung electronics co., ltd., Ondrej Texler of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): H04N21/231, H04N21/266, H04N21/845
CPC Code(s): H04N21/23106
Abstract: computer-implemented content delivery includes caching a source content having a plurality of bridge points. a user event indicating an interaction with a user is received. the user event is received during playback of the source content. in response to the user event, a template is selected from a plurality of cached templates. the template corresponds to a bridge point selected from the plurality of bridge points of the source content as an exit point from the source content. in response to the user event, a bridge is dynamically generated. the bridge links the bridge point with the template. in response to the user event, a target content is selected from a plurality of cached target contents. in response to the user event, the bridge, the template, and the target content is conveyed to a device of the user for playback following the bridge point of the source content.
Inventor(s): Sungmok SEO of Suwon-si (KR) for samsung electronics co., ltd., Taehun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaebok LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyunkook CHO of Suwon-si (KR) for samsung electronics co., ltd., Kapil SACHDEVA of Noida (IN) for samsung electronics co., ltd., Pushpinder GOYAL of Noida (IN) for samsung electronics co., ltd.
IPC Code(s): H04N21/25, H04N21/442
CPC Code(s): H04N21/251
Abstract: a method of tracing a knowledge level of a user, includes: sensing a reaction of the user consuming content; determining an understanding of the user with respect to the content based on the reaction of the user; inputting the understanding and information about the content into a knowledge tracing model; and updating the knowledge level of the user based on an output from the knowledge tracing model.
Inventor(s): Jaemin CHUN of Suwon-si (KR) for samsung electronics co., ltd., Injung LEE of Suwon-si (KR) for samsung electronics co., ltd., Minjin RHO of Suwon-si (KR) for samsung electronics co., ltd., Hyunggoog SEO of Suwon-si (KR) for samsung electronics co., ltd., Jeongpyo LEE of Suwon-si (KR) for samsung electronics co., ltd., Insun HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N21/442, G06V20/40, H04N21/233, H04N21/234, H04N21/422, H04N21/472
CPC Code(s): H04N21/44222
Abstract: a method, performed by a server, of providing media content includes: obtaining media content including video data and audio data; obtaining first context data by analyzing the video data; obtaining second context data by analyzing the audio data; based on the first context data and the second context data, generating scene context data corresponding to a plurality of video frames of the media content; determining a user intention for navigating the media content based on a user input; identifying a first at least one video frame of the plurality of video frames corresponding to the user intention based on the scene context data; and outputting the identified first at least one video frame.
Inventor(s): Daekyu SHIN of Suwon-si (KR) for samsung electronics co., ltd., Yunghak MO of Suwon-si (KR) for samsung electronics co., ltd., Hyungwoo SHIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/63, H04N23/45, H04N23/58
CPC Code(s): H04N23/632
Abstract: an electronic device having a multi-camera, according to various embodiments of the present disclosure, includes: the multi-camera, a display, a memory, and a processor operatively connected to the camera, the display, and the memory. the processor may be configured to receive a first image being photographed at a first angle of view of the camera, receive a second image being photographed at a second angle of view of the camera, identify a subject in the first image according to predetermined criteria, generate a third image in which the identified subject is cropped according to a predetermined area of interest, and display the second image and the third image on at least a portion of an area in which the first image is displayed. various other embodiments may be possible.
Inventor(s): Wooyong LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Kyungyul SEO of Gyeonggi-do (KR) for samsung electronics co., ltd., Jonghun WON of Gyeonggi-do (KR) for samsung electronics co., ltd., Changhoon KANG of Gyeonggi-do (KR) for samsung electronics co., ltd., Donghyun KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Sungeun KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Daehyun SUNG of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/67, H04N7/01
CPC Code(s): H04N23/67
Abstract: an electronic device and method thereof are provided. a method for operating an electronic device configured to record an image includes obtaining a plurality of first images for one or more objects as per a first frame rate using a camera; identifying a designated event for slow motion recording while providing a preview using at least one image among the plurality of first images via a display; based at least in part on the designated event, obtaining a plurality of second images as per a second frame rate higher than the first frame rate using the camera while focusing of the camera is locked; and providing a video related to the one or more objects using at least one of the plurality of second images.
Inventor(s): Trung Tuan PHAM of Hanoi (VN) for samsung electronics co., ltd., Ngoc Hung HO of Hanoi (VN) for samsung electronics co., ltd.
IPC Code(s): H04N23/69, G06V10/40, H04N23/61, H04N23/63, H04N23/667, H04N23/90
CPC Code(s): H04N23/69
Abstract: an electronic device and a controlling method thereof are provided. the electronic device includes a display, a first camera, a second camera, memory storing one or more computer programs, and one or more processors communicatively coupled to the display, the first camera, the second camera, and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors, cause the electronic device to, obtain a first image through the first camera operating in a zoom mode, control the display to display the first image, obtain a second image through the second camera operating in a normal mode, identify a third image of the first camera in the normal mode corresponding to the first image based on a zoom-in ratio in the zoom mode, by detecting an object included in the second image, obtain location information regarding the detected object in the second image, based on a relative location between the second image and the third image, obtain location information of the object in the third image corresponding to the location information obtained from the second image, and, based on the location information of the object, detect the object in the first image.
Inventor(s): Chanyoung JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/80, H04N25/618, H04N25/779, H04N25/78
CPC Code(s): H04N23/80
Abstract: an image sensing device includes a pixel array including a photoconverter configured to convert optical signals into analog electrical signals, an analog-digital converting (adc) circuit configured to convert the analog electrical signals received from the pixel array into digital signals, an address bus, a random number generator configured to generate random numbers based on an input of least significant bits (lsbs) of a plurality of digital signals transmitted from the adc circuit through the address bus, and a signal processor configured to perform image processing using the random numbers.
Inventor(s): Sangyoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Moongi KANG of Seoul (KR) for samsung electronics co., ltd., Woo-Shik Kim of Suwon-si (KR) for samsung electronics co., ltd., Kyeonghoon JEONG of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/84, H04N25/131
CPC Code(s): H04N23/843
Abstract: provided are a color interpolation method and an image acquisition device for a multispectral filter array. the color interpolation method includes acquiring a raw multispectral image on the basis of a multispectral filter array, generating a guide image for color interpolation of the raw multispectral image, generating a difference image between the raw multispectral image and the guide image, generating a demosaiced difference image by performing color interpolation based on the difference image, and generating a demosaiced multispectral image based on the demosaiced difference image and the guide image.
Inventor(s): Yibing Michelle WANG of Temple City CA (US) for samsung electronics co., ltd., Yanhai REN of Rosemead CA (US) for samsung electronics co., ltd.
IPC Code(s): H04N25/533, H04N25/46, H04N25/78
CPC Code(s): H04N25/533
Abstract: a system and method for shutter control. in some embodiments, the system includes: a pixel array for imaging; and a shutter control signal generator circuit, the shutter control signal generator circuit being configured: to control shutters of a first subarray of the pixel array with a first set of control signals, and to control shutters of a second subarray of the pixel array with the first set of control signals.
Inventor(s): Jeisung LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyeongjong Lim of Suwon-si (KR) for samsung electronics co., ltd., Yohan Roh of Suwon-si (KR) for samsung electronics co., ltd., Youngil Seo of Suwon-si (KR) for samsung electronics co., ltd., Deokha Shin of Suwon-si (KR) for samsung electronics co., ltd., Chanwoo Ahn of Suwon-si (KR) for samsung electronics co., ltd., Hansol Lee of Suwon-si (KR) for samsung electronics co., ltd., Yeolmin Seong of Suwon-si (KR) for samsung electronics co., ltd., Jeongguk Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/683, H04N25/78
CPC Code(s): H04N25/683
Abstract: an electronic device may include a first defective pixel corrector configured to correct pixel values of defective pixels among the plurality of pixels by using pixel values of neighboring pixels of each of the defective pixels and generate first pixel data, the pixel values of the defective pixels being included in the image data, and a second defective pixel corrector configured to correct a pixel value of a cluster of defective pixels by using a neural network and generate second pixel data, the pixel value of the cluster of defective pixels being included in the image data, and the neural network being trained to correct the cluster of defective pixels.
20240323566. IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hyunseok SONG of Suwon-si (KR) for samsung electronics co., ltd., Boseong KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/77
CPC Code(s): H04N25/77
Abstract: an image sensor includes a substrate having a first surface and a second surface opposite to each other in a first direction, and a pixel array including a plurality of pixels arranged in a second direction perpendicular to the first direction and a third direction perpendicular to the second direction. the pixel array includes a first pixel and a second pixel adjacent to the first pixel. each of the first pixel and the second pixel is inside the substrate and includes a pair of photodiodes. the first pixel includes a first pixel interior separation layer between the pair of photodiodes and extending in the first direction. the second pixel includes a second pixel interior separation layer between the pair of photodiodes and extending in the first direction.
Inventor(s): Ho Yong NA of SUWON-SI (KR) for samsung electronics co., ltd., Kyung-Min KIM of SUWON-SI (KR) for samsung electronics co., ltd., Young Tae JANG of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/772, H04N25/78
CPC Code(s): H04N25/772
Abstract: an image sensor includes a pixel having first and second photodiodes, a storage capacitor, an overflow transistor, and a read circuit. the pixel is configured to output a first sub-output signal obtained by converting electric charge generated by the first photodiode during an exposure period with first conversion gain, output a second sub-output signal obtained by converting the electric charge generated by the first photodiode during the exposure period with second conversion gain, output a first reset signal corresponding to the first sub-output signal and a second reset signal corresponding to the second sub-output signal, output a third sub-output signal, which is obtained by converting a portion of electric charge generated by the second photodiode during the exposure period with third conversion gain, output a fourth sub-output signal, obtained by converting the electric charge generated by the second photodiode and stored in the storage capacitor during the exposure period, with fourth conversion gain, and output a third reset signal corresponding to the third sub-output signal and a fourth reset signal corresponding to the fourth sub-output signal.
Inventor(s): Myeongjin OH of Suwon-si (KR) for samsung electronics co., ltd., Mooyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaejung PARK of Suwon-si (KR) for samsung electronics co., ltd., Haneul JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/76, H03K4/06, H04N25/77, H04N25/78
CPC Code(s): H04N25/7795
Abstract: a ramp signal generator includes a clock divider configured to generate a plurality of ramp clocks having different clocks, an output bit selector configured to select an output bit for reading out a pixel signal based on an analog gain of a ramp signal, a ramp clock controller configured to set a clock corresponding to the output bit, from among the plurality of ramp clocks, as a ramp clock, and a ramp offset controller configured to set an offset value corresponding to the output bit, from among a plurality of offset values, as a ramp offset value.
Inventor(s): Daeyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Hoyong Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/76, G01S7/481, G01S17/894, H01L27/146, H04N13/289, H04N25/53, H04N25/77
CPC Code(s): H04N25/7795
Abstract: an image sensor is disclosed. the image sensor includes: a demodulation clock generation circuit configured to generate m demodulation clock signals having n phases; a buffer circuit including m signal lines configured to transfer each of the m demodulation clock signals; and a pixel array including a plurality of pixels, wherein a pixel of the plurality of pixels has m taps and is configured to receive m demodulation signals passing through the m signal lines as inputs. each of the m demodulation signals is conducted by each of the m signal lines during an integration time of one frame of the pixel, and m and n are integers greater than or equal to 2.
Inventor(s): Ankush CHOWDHURY of Bengaluru (IN) for samsung electronics co., ltd., Prashant Govindlal RUPAPARA of Bengaluru (IN) for samsung electronics co., ltd., Anup Ramesh BHAT of Bengaluru (IN) for samsung electronics co., ltd., Akshaya A MUKUNDAN of Bengaluru (IN) for samsung electronics co., ltd., Anmol Satyanarayan ZANWAR of Bengaluru (IN) for samsung electronics co., ltd., Vishwanath Vijaykumar HIREMATH of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): H04N25/78, H04N25/58
CPC Code(s): H04N25/78
Abstract: a method for performing readout of a pixel array associated with an image sensor may include for a first exposure row and one or more additional exposure rows of the pixel array, detecting, using processing circuitry, completion of exposure operations of the first exposure row and the one or more additional exposure rows, and reading, using the processing circuitry, pixel values from sets of columns associated with sets of analog to digital converters (adcs) corresponding to the first exposure row and the one or more additional exposure rows.
Inventor(s): Youngsuk SONG of Suwon-si (KR) for samsung electronics co., ltd., Hanki KIM of Suwon-si (KR) for samsung electronics co., ltd., Donghyun LIM of Suwon-si (KR) for samsung electronics co., ltd., Haekwang PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04R5/04, G06F3/16, H04R5/02, H04S3/00
CPC Code(s): H04R5/04
Abstract: an electronic device and a control method thereof is provided. the electronic device control method may include receiving audio data and data on the audio data including a presentation time stamp information indicating when the audio data is required to be output, and a time stamp information of an external device; synchronizing a system time of the electronic device with a system time of the external device by using the time stamp information of the electronic device and of the external device; storing the audio data in a buffer based on the system time of the electronic device and the presentation time stamp information; outputting the audio data stored in the buffer by a first audio clock through a speaker of the electronic device; and changing the first audio clock by comparing the audio data stored in the buffer with a predetermined buffer amount.
Inventor(s): Chungwoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Minhyung Kim of Suwon-si (KR) for samsung electronics co., ltd., Boyoun Park of Suwon-si (KR) for samsung electronics co., ltd., Soungkwan Kimn of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W4/90, H04W4/38
CPC Code(s): H04W4/90
Abstract: an electronic device includes an emergency call that receives an emergency call service request, a controller that operates the electronic device in one of a normal mode and an emergency control mode based on the emergency call service request, a temperature sensor that measures a temperature of a measurement target, and one or more memories that store temperature information about the temperature of the measurement target. the controller, when the electronic device is operated in the emergency control mode, performs a temperature control operation based on the temperature information.
Inventor(s): Rajavelsamy RAJADURAI of Bangalore (IN) for samsung electronics co., ltd., Nivedya Parambath SASI of Bangalore (IN) for samsung electronics co., ltd., Rajendran ROHINI of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W12/041, H04W12/06
CPC Code(s): H04W12/041
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. embodiments herein provide a system and method for key refresh in authentication and key management for applications (akma). the proposed method is to support krefresh by requesting the refreshing parameters from the network once the kis about to expire. further, the proposed method is to support krefresh by requesting the refreshing parameters from the network once the kis about to expire. further the proposed method uses certain mechanisms to provide the refresh parameter to the ausf, aanf and the ue as a part of akma refresh procedure or as a part of upu procedure. further, the proposed method supports akma key refresh with limited impacts on akma services in 5g system. furthermore, the proposed method is used to support a mechanism to address the key synchronisation issue at a user equipment (ue) side, af and at the network side.
Inventor(s): Vinay Kumar SHRIVASTAVA of Bangalore (IN) for samsung electronics co., ltd., Diwakar SHARMA of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W24/10, H04W76/28, H04W76/40
CPC Code(s): H04W24/10
Abstract: in an embodiment, a method for performing a measurement operation for multicast and broadcast services (mbs) in 5g is disclosed. the method includes receiving at a user equipment (ue), a message from a network for configuring the ue comprising at least one of one or more configurations, and one or more reference signals of one or more of a bandwidth part (bwp) or a common frequency resource (cfr) associated with one of a unicast and the mbs. the method includes performing a measurement operation for the mbs reception for the one or more configurations based on the one or more reference signals associated with one or more of the unicast and the mbs. the method further includes generating a measurement report associated with the mbs reception based on a measurement of the mbs.
Inventor(s): Ameha Tsegaye ABEBE of Suwon-si (KR) for samsung electronics co., ltd., Youngrok JANG of Suwon-si (KR) for samsung electronics co., ltd., Younsun KIM of Suwon-si (KR) for samsung electronics co., ltd., Seongmok LIM of Suwon-si (KR) for samsung electronics co., ltd., Hyoungju JI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W24/10
CPC Code(s): H04W24/10
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a user equipment (ue) in a communication system is provided. the ue comprises a transceiver and a controller configured to receive, from a base station, configuration information associated with a multiple transmit-receive points (trps): identify amplitude coefficients associated with the multiple trps based on the configuration information; and transmit, to the base station, a channel state information (csi) report includes indicators indicating the amplitude coefficients associated with the multiple tprs.
Inventor(s): Md. Saifur Rahman of Plano TX (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W24/10, H04L5/00, H04W72/0446
CPC Code(s): H04W24/10
Abstract: apparatuses and methods for quantizing time-domain channel properties. a method for operating a user equipment (ue) includes receiving a configuration about a time domain channel property (tdcp) report. the configuration includes information about k delay values {�;} for i=1, . . . , k, where k≥1. the method further includes determining, based on the configuration, tdcp amplitudes corresponding to the k delay values, respectively; determining, based on the configuration, the tdcp report; and transmitting the tdcp report. the tdcp report includes indicators [k. . . k] indicating (i) values [a. . . a] and (ii) corresponding tdcp amplitude values obtained from: 1−a, i=1, . . . , k. a mapping from kto ais given in a table.
Inventor(s): Seyong PARK of Suwon-si (KR) for samsung electronics co., ltd., Byungseung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jonghan KIM of Suwon-si (KR) for samsung electronics co., ltd., Hochong CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W28/06, H04W28/02, H04W84/06
CPC Code(s): H04W28/06
Abstract: an electronic device includes a plurality of processors and a packet pre-processing circuit. the packet pre-processing circuit determines a pre-processing policy, from among a plurality of policies, for a packet transmitted from a first processor, among plurality of processors, to a second processor, among the plurality of the processors based on packet information related to the first processor and the second processor, and performs a pre-processing operation on the packet based on the determined pre-processing policy.
Inventor(s): Rohit Kumar of Bengaluru (IN) for samsung electronics co., ltd., Pavan Kumar Devarayanigari of Bengaluru (IN) for samsung electronics co., ltd., Sree Ratan Tej Maddukuri of Bengaluru (IN) for samsung electronics co., ltd., Youngtaek Kim of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): H04W28/06, H04L5/00, H04W24/10, H04W76/19
CPC Code(s): H04W28/06
Abstract: disclosed herein is a method for udc based communication in a wireless communication system. the method includes detecting a handover event or a re-establishment event for a udc bearer, between a ue and a network. the method further includes performing a first determining operation for determining whether a pdcp status report is received by the ue from the network. thereafter, the method includes transmitting uncompressed data packets until the pdcp status report is received by the ue. the method further includes performing a second determining operation for determining whether a pdcp timer associated with a reordering window of the pdcp layer is running or stopped. the method further includes transmitting compressed data packets based on a result of the first or second determination operation.
Inventor(s): Deepanshu GAUTAM of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W28/26, H04L5/00
CPC Code(s): H04W28/26
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method performed by a leading operator platform (l-op) for deploying application servers on a federated edge network is provided. the method includes receiving, from an application service provider (asp), a deployment request for deploying an application server, whether the l-op is able to deploy at least one application server based on the deployment request, and in case that the l-op is not able to deploy the at least one application server, selecting participating operator platform (p-op) from a plurality of p-ops having a predefined federation association with the l-op for management of application servers.
Inventor(s): Sangsoo JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W36/00, H04W36/14, H04W36/30, H04W76/16, H04W76/30
CPC Code(s): H04W36/0033
Abstract: the present disclosure relates to a communication method and system for converging a 5-generation (5g) communication system for supporting higher data rates beyond a 4-generation (4g) system with a technology for internet of things (iot). the present disclosure may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services.
Inventor(s): N MUTHARASAN of Bengaluru (IN) for samsung electronics co., ltd., Meha GOEL of Bengaluru (IN) for samsung electronics co., ltd., Shrinath Ramamoorthy MADHURANTAKAM of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): H04W36/00, H04W88/06
CPC Code(s): H04W36/0058
Abstract: a method for reporting idle measurement report for secondary cell addition is provided. the method includes: receiving, by a ue during a connection release, an idle measurement configuration indicating a set of neighboring frequencies distinct from a serving frequency; performing, by the ue, an idle measurement with each frequency of the set of neighboring frequencies; reselecting, by the ue, a new serving frequency for a new serving cell; receiving, by the ue, a request to provide an idle measurement report when the ue moves to a connected mode with the new serving cell on the new serving frequency; performing, by the ue based on a ca compatibility, a filtering operation on the set of neighboring frequencies to identify frequencies that are compatible with the new serving frequency; and sending, by the ue, the idle measurement report indicating the frequencies that are compatible with the new serving frequency.
Inventor(s): Anil Agiwal of Allen TX (US) for samsung electronics co., ltd., Shiyang Leng of Allen TX (US) for samsung electronics co., ltd., Kyeongin Jeong of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W36/00, H04W36/08
CPC Code(s): H04W36/0072
Abstract: methods and apparatuses for a random access for lower layer signal based mobility in a wireless communication system. a method of a ue comprises: receiving an rrc reconfiguration message including a set of configurations of candidate cells for ltm; receiving an early ta command for acquisition of an early ta, the early ta command indicating a candidate cell configuration index; identifying, based on the rrc reconfiguration message, a configuration from the set of configurations associated with the candidate cell configuration index; and transmitting, based on the configuration, a ra preamble for the acquisition of the early ta for a candidate cell associated with the candidate cell configuration index.
Inventor(s): Chao GUAN of Suzhou Industrial Park (CN) for samsung electronics co., ltd.
IPC Code(s): H04W36/00
CPC Code(s): H04W36/0083
Abstract: a method for calling performed by a user equipment (ue) including establishing a call based on a first network in which the ue camps, determining whether a first command for handover or redirection to a second network is received from the first network, and performing an autonomous redirection in response to determining that the first command is not received and a duration between the establishing and the determining exceeds a first threshold, the autonomous redirection redirecting the ue to the second network for continuation of the call.
Inventor(s): Jie Deng of Suzhou (CN) for samsung electronics co., ltd.
IPC Code(s): H04W36/08, H04W36/32
CPC Code(s): H04W36/08
Abstract: in a mobility management system and a mobility management method of a base station, position data of a connected target terminal in a cell of the base station is acquired and based thereon a moving track of the terminal is generated and the terminal's speed is determined. based on a matching degree of the moving track of the terminal with respect to at least one track model corresponding to the speed of the terminal, a track model is selected, for which the matching degree meets a first preset condition from among the at least one track model. an initial matching degree of the moving track of the terminal with respect to the specific track model is obtained; future position data of the terminal is predicted; the initial matching degree is updated; it is determined whether the terminal is to be connected to another base station.
Inventor(s): Dahae Chong of Suwon-si (KR) for samsung electronics co., ltd., Beomkon Kim of Suwon-si (KR) for samsung electronics co., ltd., Joohyun Do of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W36/08, H04B7/06, H04W36/00
CPC Code(s): H04W36/083
Abstract: provided is an electronic device and an operating method thereof in a non-terrestrial network-based communication system, the operating method including setting a counter to an initial value; acquiring a serving metric for reception quality of a serving antenna and a candidate metric corresponding to a candidate antenna for a measurement period; comparing a magnitude of the candidate metric with a magnitude of a sum of the serving metric and an offset; determining whether the counter is equal to a predetermined threshold when the magnitude of the candidate metric is greater than the magnitude of the sum of the serving metric and the offset; and selecting an antenna from among the serving antenna and the candidate antenna in response to the counter and the threshold being equal to each other.
Inventor(s): Zhenfei SUN of Suzhou Industrial Park (CN) for samsung electronics co., ltd., Xi PENG of Suzhou Industrial Park (CN) for samsung electronics co., ltd., Xiaohua TIAN of Suzhou Industrial Park (CN) for samsung electronics co., ltd.
IPC Code(s): H04W36/14, H04W36/00, H04W88/06
CPC Code(s): H04W36/14
Abstract: a network handover method including determining whether a set of event types to be reported to a first base station includes a first event type in response to determining to hand over an electronic device from a first wireless network to a second wireless network, the first base station corresponding to the first wireless network, determining whether a measurement signal measured by the electronic device is capable of triggering a first event of the first event type in response to determining that the set of event types includes the first event type, modifying the measurement signal to obtain a modified measurement signal in response to determining that the measurement signal is not capable of triggering the first event, the modified measurement signal being capable of triggering the first event, and transmitting a measurement report based on the modified measurement signal to the first base station.
Inventor(s): Jungshin PARK of Gyeonggi-do (KR) for samsung electronics co., ltd., Youngkyo BAEK of Gyeonggi-do (KR) for samsung electronics co., ltd., Hoyeon LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Sangsoo JEONG of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W36/32, H04W36/00, H04W60/04, H04W76/10
CPC Code(s): H04W36/32
Abstract: methods and apparatus performed in a wireless communication system are provided. an attach request message for a first network supported by a user equipment (ue), is transmitted to a management entity. the attach request message includes first ue network capability information indicating support of a second network supported by the ue. an attach accept message indicating completion of attach to the first network is received from the management entity. a packet data network (pdn) connectivity request for the first network is transmitted to the management entity. a first session for the first network is established through a session management entity supporting mobility between the first network and the second network. in case that the ue supports the second network, regardless of enabled or disabled status of ue network capability for the second network, the session establishment request includes information related to a second session for the second network.
Inventor(s): June HWANG of Suwon-si (KR) for samsung electronics co., ltd., Seungri JIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W36/32, H04W36/00, H04W76/27
CPC Code(s): H04W36/324
Abstract: a method performed by a terminal in a wireless communication system is provided. the method includes identifying that a lower layer triggered mobility (ltm) cell switch is triggered, identifying a reference configuration and a candidate configuration associated with ltm, identifying whether information indicating that the candidate configuration is a complete configuration is included in the candidate configuration, and applying a radio resource control (rrc) reconfiguration message for the ltm cell switch, wherein the rrc reconfiguration message is based on at least one of the reference configuration or the candidate configuration depending on whether the information indicating that the candidate configuration is the complete configuration is included in the candidate configuration.
Inventor(s): Lei CUI of Jiangsu Province (CN) for samsung electronics co., ltd.
IPC Code(s): H04W36/32, H04W36/24
CPC Code(s): H04W36/324
Abstract: the present disclosure relates to a resource reselection method in wireless communication for a vehicle, and a device for performing the resource reselection method. the resource reselection method includes acquiring a vehicle speed, setting at least one timer based on the vehicle speed, performing a random number decision to obtain a determination result, the determination result being indicative of whether a reselection mode is to be entered, and performing resource reselection based on the determination result, the vehicle speed, and state information of the at least one timer.
Inventor(s): Shiyang Leng of Allen TX (US) for samsung electronics co., ltd., Kyeongin Jeong of Allen TX (US) for samsung electronics co., ltd., Anil Agiwal of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W48/10, H04L5/00, H04W48/20, H04W84/06
CPC Code(s): H04W48/10
Abstract: methods and apparatuses for an ntn neighbor cell measurement operation in a wireless communication system are provided. the method of ue comprises: determining whether a common search space is configured for an active bandwidth part (bwp); receiving, from a base station (bs) via a dedicated system information, a first system information block (sib) including terrestrial network (tn) coverage information based on a determination that the common search space is not configured for the active bwp; and identifying that the tn coverage information belongs to other system information (si).
Inventor(s): Yujin SIM of Suwon-si (KR) for samsung electronics co., ltd., Dahae CHONG of Suwon-si (KR) for samsung electronics co., ltd., Gunyoung KO of Suwon-si (KR) for samsung electronics co., ltd., Beomkon KIM of Suwon-si (KR) for samsung electronics co., ltd., Joohyun DO of Suwon-si (KR) for samsung electronics co., ltd., Myungjoon SHIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W48/16, H04W24/08
CPC Code(s): H04W48/16
Abstract: provided is a method of operating a wireless communication device for performing a cell search, the method including generating a first accumulated signal by accumulating a downlink signal by a first reference number of times, the generating of the first accumulated signal being based on an interval of a first synchronization signal included in the downlink signal, calculating a first quality metric based on the first accumulated signal, determining whether the first quality metric exceeds a first threshold value, and updating the first accumulated signal in response to determining the first quality metric does not exceed the first threshold value to obtain an updated first accumulated signal.
Inventor(s): Taek Kyun Shin of Suwon-si (KR) for samsung electronics co., ltd., Jun Ho Seo of Suwon-si (KR) for samsung electronics co., ltd., Jung Hun Heo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W52/02
CPC Code(s): H04W52/0229
Abstract: an application processor and a system on chip (soc) that incorporates the application processor are provided. the application processor includes a first core configured to process first data per unit time, a second core configured to process second data larger than the first data per unit time, and a lookup table configured to determine whether to activate the first core or the second core based on at least one of an analysis result of a message signal received by a communications processor, a sensing signal supplied to the application processor and a power level supplied to the communications processor.
Inventor(s): Hochoong CHO of Suwon-si (KR) for samsung electronics co., ltd., Byungseung Kim of Suwon-si (KR) for samsung electronics co., ltd., Jonghan Kim of Suwon-si (KR) for samsung electronics co., ltd., Seyong Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W52/02, H04W64/00
CPC Code(s): H04W52/0261
Abstract: an application processor (ap) is operatively connected to a modem. the ap is configured to execute at least one instruction to: acquire location information of the ap; identify, based on the location information of the ap, whether the ap is located within a target area; generate a first control signal for functions being executed by the modem after identifying that the ap is located within the target area; and transmit the first control signal to the modem.
Inventor(s): Ebrahim MolavianJazi of San Jose CA (US) for samsung electronics co., ltd., Marian Rudolf of Longueuil (CA) for samsung electronics co., ltd., Aristides Papasakellariou of Houston TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W52/14, H04L5/14, H04W52/28, H04W52/36
CPC Code(s): H04W52/146
Abstract: apparatuses and methods for prioritization of uplink transmissions by repeaters. a method for a network-controlled repeater (ncr) includes receiving, by an ncr mobile termination (ncr-mt) entity, first information for a first uplink transmission by the ncr-mt entity and second information for a second uplink transmission by an ncr forward (ncr-fwd) entity that overlap in one or more symbols. the method further includes identifying a power limit for simultaneous transmission by the ncr-mt and ncr-fwd, determining first and second powers for the first and second uplink transmissions, respectively, and when a sum of the first and second powers in the one or more symbols exceeds the power limit, third and fourth powers for the first and second uplink transmissions, respectively, that do not exceed the power limit. the method further includes transmitting, in the one or more symbols, the first and second uplink transmissions with the third and fourth powers, respectively.
Inventor(s): Junil Choi of Daejeon (KR) for samsung electronics co., ltd., In-soo Kim of Daejeon (KR) for samsung electronics co., ltd.
IPC Code(s): H04W52/26, H04B7/0452, H04W52/36
CPC Code(s): H04W52/267
Abstract: provided is a method of operating a central control device for generating a transmission signal to be transmitted to a plurality of user equipment through a plurality of base stations, the method including calculating a transmission power coefficient and a codebook parameter, such that a minimum value of a data rate of each of the plurality of user equipment is maximized, and a transmission power of the plurality of base stations is less than or equal to a transmission power limit and satisfies a fronthaul capacity limit, generating, by the central control device, a transmission signal based on the transmission power coefficient, and transmitting, by the central control device, the transmission signal to the plurality of base stations through a fronthaul.
Inventor(s): Anil Agiwal of Allen TX (US) for samsung electronics co., ltd., Shiyang Leng of Allen TX (US) for samsung electronics co., ltd., Kyeongin Jeong of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W56/00, H04W74/0833
CPC Code(s): H04W56/0045
Abstract: a ue includes a transceiver. the transceiver is configured to transmit a ue capability information message including an indication that the ue supports multiple tas per serving cell for multi-trp operation, and receive a rrc reconfiguration message including a plurality of tag ids for a serving cell and a mapping between a plurality of tci states and the plurality of tag ids for the serving cell. the ue further includes a processor operably coupled to the transceiver. the processor is configured to determine, based on the mapping, a tag id from the plurality of tag ids that corresponds with at least one tci state from the plurality of tci states. the mapping is signaled per bwp of the serving cell. the transceiver is further configured to transmit, to the serving cell, a ra preamble to obtain a ta for a tag of the serving cell.
20240323898. SL POSITIONING ON A SL INTERFACE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Emad Nader Farag of Flanders NJ (US) for samsung electronics co., ltd., Hongbo Si of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W64/00, H04L5/00, H04W24/10, H04W72/25, H04W92/18
CPC Code(s): H04W64/00
Abstract: apparatuses and methods for sl prs transmission and measurement for multi-panel ue. a method of operating a user equipment (ue) includes receiving, from a second ue, sidelink positioning reference signals (sl prss) and performing a first positioning measurement based on a first sl prs and a second positioning measurement based on a second sl prs or a third positioning measurement based on a third sl prs that is received by a first antenna panel and a fourth positioning measurement based on the third sl prs that is received by a second antenna panel. the method includes determining a first positioning measurement report based on the first positioning measurement and the second positioning measurement or the third positioning measurement and the fourth positioning measurement. the first positioning measurement report includes an identifier of a sl prs used and an identifier of an antenna panel used to receive the sl prs.
Inventor(s): Jinho KIM of Suwon-si (KR) for samsung electronics co., ltd., Yoojin CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W64/00, H04M1/72457
CPC Code(s): H04W64/006
Abstract: an operating method of a user equipment (ue) including generating communication environment information performing wireless communication with a base station (bs), the communication environment information including position information corresponding to the ue and at least one of sensor information corresponding to the ue, information related to a reception operation of the ue or information related to a transmission operation of the ue, determining whether a current communication environment corresponds to one of a plurality of main communication environments based on the communication environment information, setting values of communication parameters to match a first main communication environment in response to determining that the current communication environment corresponds to the first main communication environment, the first main communication environment being among the plurality of main communication environments, and performing wireless communication with the bs based on the values of the communication parameters.
Inventor(s): Jong-hyun RYU of Suwon-si (KR) for samsung electronics co., ltd., Han-joo Chae of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H04W68/02, H04M1/72412, H04M1/725, H04M19/04, H04W4/02, H04W4/80, H04W84/18
CPC Code(s): H04W68/02
Abstract: an electronic including a transceiver configured to receive, from at least one wearable device, information indicating whether the at least one wearable device is being worn; and a processor configured to determine whether the at least one wearable device that is being worn, based on the received information indicating whether the at least one wearable device is being worn, and to provide a notification to the at least one wearable device in response to determining that the at least one wearable device is being worn.
20240323926. SMALL DATA TRANSMISSION_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Anil Agiwal of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W72/04, H04B17/318, H04W24/08, H04W68/00, H04W76/30
CPC Code(s): H04W72/04
Abstract: methods and apparatuses for a small data transmission in a wireless communication system. a method of a ue comprises: receiving, from a bs, a rrc release message including a time threshold related to a mt-sdt; determining, based on the time threshold, whether to use cg-sdt resources for the mt-sdt; receiving a paging message including an indication of the mt-sdt; and determining whether a condition is met for using the cg-sdt resources for the mt-sdt in response to receipt of the indication of the mt-sdt in the paging message.
Inventor(s): Min WU of Beijing (CN) for samsung electronics co., ltd., Feifei SUN of Beijing (CN) for samsung electronics co., ltd., Miao ZHOU of Beijing (CN) for samsung electronics co., ltd., Yi WANG of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W72/04, H04B17/318, H04L5/00, H04W72/02, H04W74/0808
CPC Code(s): H04W72/04
Abstract: a resource assignment method performed by a user equipment (ue) is provided. the resource assignment method includes determining a target resource set for data transmission at a first time unit, selecting the earliest resource in time from the target resource set, wherein the selected resource is located at a second time unit, determining, at the second time unit and/or between the first time unit and the second time unit, whether the selected resource at the second time unit is available, and determining whether data is transmitted on the selected resource at the second time unit based on the result of the determination.
Inventor(s): Li Guo of Allen TX (US) for samsung electronics co., ltd., Md. Saifur Rahman of Plano TX (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W72/044, H04B7/06, H04B7/08, H04B17/309, H04L5/00, H04W52/14, H04W52/24, H04W52/42, H04W72/23, H04W84/04
CPC Code(s): H04W72/046
Abstract: a beam failure recovery procedure in a wireless communication system comprises receiving, from a base station (bs), at least one beam failure detection reference signal (rs) and at least one new candidate beam rs over a downlink channel; identifying a set of rs resources including an index for the at least one beam failure detection rs; identifying a set of rs resources including an index for the at least one new candidate beam rs; identifying a dedicated control-resource set (coreset) received from the bs for a beam failure recovery request; transmitting, to the bs, the beam failure recovery request associated with a quality measurement of the at least one beam failure detection rs over a physical random access channel (prach); and receiving, from the bs, a beam failure response in response to the beam failure recovery request based on the dedicated coreset indicated to the ue.
Inventor(s): Min WU of Beijing (CN) for samsung electronics co., ltd., Feifei SUN of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W72/115, H04L1/1812, H04W72/0446, H04W72/12, H04W72/231
CPC Code(s): H04W72/115
Abstract: embodiments of the present application provide a communication method, a communication apparatus, an electronic device and a computer-readable storage medium. the method comprises steps of: acquiring configuration information of grant-free transmission; and, performing grant-free transmission on the basis of the configuration information of grant-free transmission. in the embodiments of the present application, by improving uplink and downlink transmissions of the grant-free technology, the purpose of effectively saving the scheduling signaling overhead and reducing the scheduling delay is achieved.
Inventor(s): Sangyeob JUNG of Suwon-si (KR) for samsung electronics co., ltd., Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/12, H04W72/51, H04W76/20, H04W84/04
CPC Code(s): H04W72/12
Abstract: the disclosure relates to a 5generation (5g) or 6generation (6g) communication system for supporting a higher data transmission rate. a wireless communication system according to an embodiment of the disclosure provides a method by which a user equipment (ue) supporting a non-public network (npn) determines validity of a system information block (sib) and obtains or re-obtains an sib.
Inventor(s): Rohit KUMAR of Bangalore (IN) for samsung electronics co., ltd., Pavan Kumar DEVARAYANIGARI of Bangalore (IN) for samsung electronics co., ltd., Sree Ratan Tej MADDUKURI of Bangalore (IN) for samsung electronics co., ltd., Bharath KUMAR of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W72/1268, H04L1/1867, H04W88/06
CPC Code(s): H04W72/1268
Abstract: provided is a method and system of scheduling transmission of signals in a multi-sim ue. the method includes performing an active communication session through a tchannel of the multi-sim ue, the tchannel being associated with a corresponding first set of rx channels, the first set of rx channels including at least one among a plurality of rx channels of the multi-sim ue, receiving one or more dl signals in a second set of rx channels among the plurality of rx channels while the tchannel is not allocated to transmit one or more uplink (ul) signals corresponding to the one or more dl signals, generating a ul-tb using a rlc sdu in response to the receiving, the rlc sdu corresponding to one or more pending ul grants of the one or more ul signals, and transmitting the ul-tb to a network entity via a pusch.
Inventor(s): Junyung YI of Suwon-si (KR) for samsung electronics co., ltd., Jeongho YEO of Suwon-si (KR) for samsung electronics co., ltd., Suha YOON of Suwon-si (KR) for samsung electronics co., ltd., Youngbum KIM of Suwon-si (KR) for samsung electronics co., ltd., Sungjin PARK of Suwon-si (KR) for samsung electronics co., ltd., Jinyoung OH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/21, H04L5/00, H04L25/02, H04W72/0446
CPC Code(s): H04W72/21
Abstract: the present disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. the present disclosure provides a method for improving the coverage of an uplink channel for uplink transmission. a method performed by means of a terminal in a wireless communication system, according to one embodiment of the present disclosure, may comprise the steps of: receiving, from a base station, pusch configuration information for joint channel estimation by using transport block (tb) processing over multi-slots (tboms) in which one tb is allocated and transmitted to multiple slots, and a dmrs received through a plurality of puschs; transmitting, to the base station, at least one pusch according to the pusch configuration information; receiving, from the base station, feedback delay information and a pdcch, which includes an harq process number corresponding to the at least one pusch; and determining, on the basis of the pusch configuration information and the feedback delay information, the validity of harq-ack information included in the pdcch.
Inventor(s): Jeongho YEO of Gyeonggi-do (KR) for samsung electronics co., ltd., Jinyoung OH of Seoul (KR) for samsung electronics co., ltd., Sungjin PARK of Incheon (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/21, H04L1/1812, H04L5/14, H04W72/566
CPC Code(s): H04W72/21
Abstract: the present disclosure relates to a communication technique for converging an iot technology with a 5g communication system for supporting a higher data transmission rate beyond a 4g system, and a system therefor. the present disclosure may be applied to an intelligent service (for example, a smart home, a smart building, a smart city, a smart car or connected car, healthcare, digital education, retail business, a security and safety related service, or the like) on the basis of a 5g communication technology and an iot related technology. the present invention relates to a wireless communication system and, specifically, to a method and apparatus for decoding a downlink control signal.
Inventor(s): Ouming Liu of Suzhou Industrial Park (CN) for samsung electronics co., ltd.
IPC Code(s): H04W72/40, H04W72/543, H04W72/566
CPC Code(s): H04W72/40
Abstract: there is provided a method, a user equipment and a system for sidelink communication. the method for sidelink communication includes: a user equipment (ue) requesting a base station (gnb) to transmit a sidelink resource in response to a sidelink communication request, determining whether an available sidelink resource is received from the gnb, and performing the sidelink communication using a pre-configured sidelink resource for the sidelink communication based on a determination that the available sidelink resource is not received from the gnb and based on a determination that the pre-configured sidelink resource is available.
Inventor(s): Yingyang LI of Beijing (CN) for samsung electronics co., ltd., Yi WANG of Beijing (CN) for samsung electronics co., ltd., Shichang ZHANG of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W72/53, H04L1/1812, H04L1/1829, H04L5/00, H04W72/23
CPC Code(s): H04W72/53
Abstract: the present disclosure relates to a pre-5th-generation (5g) or 5g communication system to be provided for supporting higher data rates beyond 4th-generation (4g) communication system such as long term evolution (lte). the present disclosure provides a method for allocating physical uplink control channel (pucch) resources, including: a user equipment (ue) detects a physical downlink control channel (pdcch) scheduling a physical downlink shared channel (pdsch) in a configured control resource set; the ue analyzes the detected pdcch, correspondingly receives pdsch, and determines pucch resources feeding back hybrid automatic repeat request-ack (harq-ack) information; the ue transmits the harq-ack information by using the determined pucch resources. by adopting the method in the present disclosure, a method for allocating pucch resources is provided. an upper-limit resource utilization is improved. and a method for indicating pucch resources in downlink control information (dci) is put forward, thereby reducing bit overheads of dci.
Inventor(s): Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd., Soenghun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W74/00, H04B7/06, H04W36/00, H04W74/0833, H04W76/19
CPC Code(s): H04W74/006
Abstract: a communication method and system for converging a 5generation (5g) communication system for supporting higher data rates beyond a 4generation (4g) system with a technology for internet of things (iot) are provided. the communication method and system includes intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. the method includes receiving and selectively applying at least one of a first set of random access prioritization parameters, a second set of random access prioritization parameters, or a third set of random access prioritization parameters, based on whether a random access procedure is initiated for beam failure recovery or handover.
Inventor(s): Jinyoung OH of Gyeonggi-do (KR) for samsung electronics co., ltd., Jeongho YEO of Gyeonggi-do (KR) for samsung electronics co., ltd., Hyunseok RYU of Gyeonggi-do (KR) for samsung electronics co., ltd., Sungjin PARK of Gyeonggi-do (KR) for samsung electronics co., ltd., Jonghyun BANG of Gyeonggi-do (KR) for samsung electronics co., ltd., Cheolkyu SHIN of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W74/08, H04W72/0453
CPC Code(s): H04W74/08
Abstract: the disclosure relates to a communication method and system for converging a 5g communication system for supporting higher data rates beyond a 4g system with a technology for iot. a method of a base station includes determining a contention window for a sub-band among multiple sub-bands based on hybrid automatic repeat request-acknowledgement feedbacks corresponding to physical downlink shared channels (pdschs) in a reference duration, identifying a number for the sub-band between zero and the contention window, sensing the sub-band based on the number and a defer duration, and performing a downlink transmission based on sensing the sub-band to be idle, wherein the reference duration starts from a beginning of a channel occupancy and ends at a first slot where at least one of the pdschs is transmitted, and wherein the pdschs in the reference duration include a pdsch that partially but not fully overlaps with the sub-band among the multiple sub-bands and a pdsch that fully overlaps with the sub-band among the multiple sub-bands.
Inventor(s): Sangsoo JEONG of Suwon-si (KR) for samsung electronics co., ltd., Taesung JUNG of Suwon-si (KR) for samsung electronics co., ltd., Varini GUPTA of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W76/10, H04L67/306, H04W76/38
CPC Code(s): H04W76/10
Abstract: provided is a method and apparatus for enhancing the reliability in a wireless communication system. an operating method of a user plane function (upf) in a wireless communication system includes: receiving network function (nf) set related information changed through an association procedure with respect to an nf; changing a profile of the nf, based on the received nf set related information; and performing an operation related to the nf, based on the changed profile.
Inventor(s): Hong WANG of Beijing (CN) for samsung electronics co., ltd., Lixiang XU of Beijing (CN) for samsung electronics co., ltd., Xiaowan KE of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W76/15, H04W28/02, H04W76/11, H04W76/12, H04W76/27, H04W80/08, H04W84/20
CPC Code(s): H04W76/15
Abstract: embodiments of the present invention provide a dual-connectivity (dc) establishment method and device. the first dc architecture includes a master node (mn) and a secondary node (sn), wherein the sn includes a central unit (cu) and a distributed unit (du); and, the cu includes a control plane functional entity (cp) and a user plane functional entity (up). the method includes steps of: receiving, by an sn-cp, a first sn setup request message transmitted by an mn; transmitting a first resource setup request message to an sn-up according to the first sn setup request message, and receiving a first resource setup response message transmitted by the sn-up; and, transmitting, by the sn-cp, a first bearer setup request message to an sn-du, and receiving a first bearer setup response message transmitted by the sn-du.
Inventor(s): June HWANG of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/19, H04W74/00, H04W74/0833, H04W80/02
CPC Code(s): H04W76/19
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method performed by an ncr mt in a wireless communication system is provided. the method includes receiving side control information including a forwarding configuration, in case that a beam failure occurs, transmitting, to an ncr forwarding, a first indication to cease forwarding, initiating a beam failure recovery procedure for the ncr mt, and in case that the beam failure recovery procedure is successfully completed, transmitting, to the ncr forwarding, a second indication to resume forwarding by using the forwarding configuration.
Inventor(s): Daejoong KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunjeong LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/22, H04W76/12, H04W76/23
CPC Code(s): H04W76/22
Abstract: the disclosure relates to a 4th generation (4g) communication system such as long term evolution (lte), and a 5th generation (5g) or pre-5g communication system for supporting higher data transmission rates than 4g communication systems. a method performed by a session management function (smf) device in a wireless communication system is provided. the method includes receiving, by the smf device, a protocol data unit (pdu) session establishment request message from an access and mobility management function (amf), transmitting, by the smf device, a pdu session establishment response message to the amf, transmitting, by the smf device, a first session establishment request message to a user plane function (upf) anchor, receiving, by the smf device, a first session setup establishment message from the upf anchor, transmitting, by the smf device, a second session establishment request message to a radio access gateway (rag), and receiving, by the smf device, a second session establishment response message from the rag, wherein the rag includes a central unit (cu)-user plane (up) and a upf edge.
Inventor(s): Lalith KUMAR of Bangalore (IN) for samsung electronics co., ltd., Mahmoud WATFA of Staines (GB) for samsung electronics co., ltd.
IPC Code(s): H04W76/25, H04L1/1607, H04W68/00, H04W76/30
CPC Code(s): H04W76/25
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. embodiments disclosed herein relate to a method for determining request for resources from a network apparatus in a wireless network by a first ue of a multi-usim ue. the method includes determining that the first ue of the multi-usim ue need to request for resources from the network apparatus in the wireless network to transmit pending uplink data to the network apparatus or receive pending downlink data from the network apparatus.
Inventor(s): Donggun KIM of Suwon-si (KR) for samsung electronics co., ltd., Soenghun KIM of Suwon-si (KR) for samsung electronics co., ltd., Himke VAN DER VELDE of Middlesex (GB) for samsung electronics co., ltd.
IPC Code(s): H04W76/27, H04B7/0413, H04L47/36, H04L47/43, H04L69/166, H04L69/22, H04L69/321
CPC Code(s): H04W76/27
Abstract: the present disclosure relates to a pre-5-generation (5g) or 5g communication system to be provided for supporting higher data rates beyond 4-generation (4g) communication system such as long term evolution (lte). the present disclosure relates to a method of segmenting data by a transmitting side in a mobile communication system. the method includes: determining whether a size of a rrc (radio resource control) message exceeds a maximum pdcp (packet data convergence protocol) sdu (service data unit) size; when the size of the rrc message exceeds the maximum pdcp sdu size, performing a segmentation of the rrc message into a plurality of segments in a rrc layer; and transmitting, to a base station (bs), the plurality of segments of the rrc message.
Inventor(s): Min WU of Beijing (CN) for samsung electronics co., ltd., Sa ZHANG of Beijing (CN) for samsung electronics co., ltd., Feifei SUN of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W76/28, H04B7/06, H04W72/231
CPC Code(s): H04W76/28
Abstract: the disclosure relates to a fifth generation (5g) or sixth generation (6g) communication system for supporting a higher data transmission rate. disclosed is a method performed by a user equipment (ue) in a communication system, including receiving a first configuration of a discontinuous reception (drx), the first configuration including at least one of a first starting position, a first cycle length and a first onduration length, performing the drx based on the first configuration, determining a second configuration of the drx after a cell discontinuous transmission (dtx) and/or cell drx is enabled, the second configuration including at least one of a second starting position, a second cycle length and a second onduration length, and performing the drx based on the second configuration.
Inventor(s): Vinay Kumar SHRIVASTAVA of Bangalore (IN) for samsung electronics co., ltd., Diwakar SHARMA of Bangalore (IN) for samsung electronics co., ltd., Sangkyu BAEK of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/40, H04W52/02, H04W76/28
CPC Code(s): H04W76/40
Abstract: the present disclosure relates to a pre-5th generation (5g) or 5g communication system to be provided for supporting higher data rates beyond 4th generation (4g) communication system such as long term evolution (lte). a method for managing power consumption of a ue while receiving mbs services includes aligning a paging occasion of paging reception to match awake periods of a paging drx cycle with awake periods of a drx configuration intended for reception of the mbs services, if the ue is in an idle/inactive mode and managing a drx cycle based on the aligned po to receive the mbs services, and receiving a wus from a network indicating presence or absence of allocations for the ue to receive the mbs services in a mbs service drx cycle, if the ue is in a connected mode and managing the drx cycle based on the received wus to receive the mbs services.
Inventor(s): OKGYEONG PARK of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H05K1/02, H01L23/00, H01L23/498, H01L25/18, H05K1/11
CPC Code(s): H05K1/0225
Abstract: a printed circuit board includes a base board layer including a plurality of board layers which are stacked, the plurality of board layers including a core board layer, a plurality of sub-board layers stacked on each of upper and lower surfaces of the core board layer, and a reinforcing board layer stacked on at least one of the plurality of sub-board layers, a plurality of equipotential plates disposed on a plurality of interconnection layers located on upper and lower surfaces of the plurality of board layers and having differential signal openings and single signal openings, and a substrate interconnection structure including a plurality of board top pads, a plurality of board bottom pads, and a plurality of board interconnection paths connecting the plurality of board top pads to the plurality of board bottom pads through the base board layer.
Inventor(s): Yoonhee LEE of Suwon-si (KR) for samsung electronics co., ltd., Juncheol SHIN of Suwon-si (KR) for samsung electronics co., ltd., Aeree KIM of Suwon-si (KR) for samsung electronics co., ltd., Joungki PARK of Suwon-si (KR) for samsung electronics co., ltd., Seungchang BAEK of Suwon-si (KR) for samsung electronics co., ltd., Junghyun IM of Suwon-si (KR) for samsung electronics co., ltd., Jinhwan JEONG of Suwon-si (KR) for samsung electronics co., ltd., Sungho CHO of Suwon-si (KR) for samsung electronics co., ltd., Hangyu HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K5/04
CPC Code(s): H05K5/04
Abstract: an electronic device housing and an electronic device including the same are provided. an electronic device housing includes a metal substrate, a plastic injection part formed on one area on a surface of the metal substrate, an oxide film layer formed on one area on the surface of the metal substrate, a plating layer formed on one area on the surface of the metal substrate, and a deposition layer formed on the plating layer, wherein the oxide film layer and the plating layer may be formed to be apart from each other.
20240324164. INTEGRATED CIRCUIT_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jeewoong Kim of Suwon-si (KR) for samsung electronics co., ltd., Kyunghee Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B10/00, H01L23/528, H01L27/092, H01L29/06, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H10B10/125
Abstract: according to the inventive concept, based on the layout of a 3-dimensional stack structure enabling minimization of the planar area occupied by unit cells and simplification of the configuration of a wiring connection structure between transistors defining at least a portion of an sram device, an integrated circuit with a reduced size and improved reliability may be implemented.
Inventor(s): Deokhan Bae of Suwon-si (KR) for samsung electronics co., ltd., Juhun Park of Seoul (KR) for samsung electronics co., ltd., Yuri Lee of Hwaseong-si (KR) for samsung electronics co., ltd., Yoonyoung Jung of Suwon-si (KR) for samsung electronics co., ltd., Sooyeon Hong of Yongin-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B10/00, H01L29/06, H01L29/417, H01L29/423, H01L29/78, H01L29/786
CPC Code(s): H10B10/125
Abstract: a semiconductor memory device includes an active pattern on a substrate, the active pattern including a source/drain pattern in an upper portion thereof, a gate electrode on the active pattern and extended in a first direction, the gate electrode and the source/drain pattern adjacent to each other in a second direction that crosses the first direction, and a shared contact coupled to the source/drain pattern and the gate electrode to electrically connect the source/drain pattern and the gate electrode. the shared contact includes active and gate contacts, which are electrically connected to the source/drain pattern and the gate electrode, respectively. the gate contact includes a body portion coupled to the gate electrode and a protruding portion, which protrudes from the body portion in the second direction and extends into and buried in the active contact.
Inventor(s): Soyoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Janghee LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/02
Abstract: a method of manufacturing a semiconductor device includes forming a target layer on a substrate, forming a mask pattern on the substrate including the target layer, and etching the target layer using the mask pattern as an etching mask to form a resulting pattern, wherein the mask pattern includes a first mask layer including an amorphous metal oxide, an amorphous insulating material including an amorphous metal oxide or no metal, and an upper mask layer and a lower mask layer covering upper and lower surfaces of the first mask layer, respectively.
Inventor(s): Donghoon KWON of Suwon-si (KR) for samsung electronics co., ltd., Yanghee Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/09
Abstract: a method of manufacturing a semiconductor device includes preparing a substrate including a plurality of active regions and a peripheral active region defined by an isolation layer, forming a word line in a word line trench that crosses the plurality of active regions, forming a plurality of bit line structures, each of the plurality of bit line structures including a bit line on the plurality of active regions, forming a plurality of gate line structures, each of the plurality of gate line structures including a gate line on the peripheral active region, forming a plurality of buried contacts between the plurality of bit line structures, the plurality of buried contacts being connected to the plurality of active regions, and forming an inter-gate insulating layer between the plurality of gate line structures, the inter-gate insulating layer including an oxide having impurities.
20240324177. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): YONGJIN LEE of Suwon-si (KR) for samsung electronics co., ltd., YOUNGGEUN SONG of Suwon-si (KR) for samsung electronics co., ltd., MINHEE CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00, H01L29/786
CPC Code(s): H10B12/315
Abstract: a semiconductor device includes a substrate, a bit line that extends in a first horizontal direction on the substrate, a first mold layer on the bit line, wherein the first mold layer defines a mold opening that exposes a portion of an upper surface of the bit line and extends in a second horizontal direction that intersects the first horizontal direction, a channel layer on the bit line, one or more word lines on sidewalls of the channel layer and that extend in the second horizontal direction, and a gate insulating layer between the word line and the channel layer, where the channel layer includes a first oxide semiconductor layer, a second oxide semiconductor layer, and an auxiliary channel layer between the first oxide semiconductor layer and the second oxide semiconductor layer.
Inventor(s): Jongmin Kim of Suwon-si (KR) for samsung electronics co., ltd., Ho-Ju Song of Suwon-si (KR) for samsung electronics co., ltd., Myeong-Dong Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00, H01L21/768, H01L23/528
CPC Code(s): H10B12/482
Abstract: a method of manufacturing a semiconductor device includes forming a buffer layer on a substrate including active regions and word lines, sequentially stacking a first conductive layer and a first insulating layer, forming bit line structure main parts such that each bit line main part is in contact with one or more of the active regions through a plurality of first contacts, by etching the first insulating layer and the first conductive layer, stacking first spacers, forming bit line structure expansions by etching the first spacers, the first insulating layer, and the first conductive layer, and forming second contacts such that the second contacts are in contact with the active regions, respectively. the bit line structure expansions are connected to the bit line structure main parts, respectively, and are wider than the bit line structure main parts as viewed in a plan view.
20240324182. SEMICONDUCTOR MEMORY DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Seongtak Cho of Suwon-si (KR) for samsung electronics co., ltd., Inwoo Kim of Suwon-si (KR) for samsung electronics co., ltd., Miso Myung of Suwon-si (KR) for samsung electronics co., ltd., Jihun Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/482
Abstract: a semiconductor device includes a substrate that includes an active pattern, a bit line structure that crosses the active pattern, a storage node contact electrically connected to the active pattern next to the bit line structure, a spacer structure between a side surface of the bit line structure and the storage node contact, an upper surface of the spacer structure is at a vertical level lower than an upper surface of the bit line structure, an insulating pattern on the spacer structure, and a landing pad structure electrically connected to the storage node contact and on the spacer structure and the bit line structure. the landing pad structure include a first side surface in contact with the spacer structure, a second side surface in contact with the bit line structure, and a third side surface in contact with the insulating pattern.
20240324183. INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Chanhoon Park of Suwon-si (KR) for samsung electronics co., ltd., Jongkyu Kim of Suwon-si (KR) for samsung electronics co., ltd., Seunghoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Sohyun Park of Suwon-si (KR) for samsung electronics co., ltd., Woohyun Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/482
Abstract: an integrated circuit device includes a substrate having an active area, a plurality of bit line structures on the substrate, the plurality of bit line structures including insulating spacers on sidewalls thereof, a buried contact between the plurality of bit line structures and electrically connected to the active area, an insulation capping pattern on a bit line structure of the plurality of bit line structures, and a landing pad electrically connected to the buried contact, the landing pad arranged to vertically overlap the bit line structure on the insulation capping pattern, wherein an uppermost surface of the landing pad is higher than an uppermost surface of the insulation capping pattern, relative to the substrate.
Inventor(s): Seokjae Won of Suwon-si (KR) for samsung electronics co., ltd., Yoongoo Kang of Suwon-si (KR) for samsung electronics co., ltd., Jaehong Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/482
Abstract: a semiconductor device may include a device isolation part on a substrate, the device isolation part defining a first active portion and a second active portion, with a center portion of the first active portion adjacent in a first direction to an edge portion of the second active portion, a first impurity region may be in the center portion of the first active portion, and a second impurity region may be in the edge portion of the second active portion. a first bit line may be in direct contact with the first impurity region and may extend across the substrate in a second direction that intersects the first direction. a storage node contact may be in contact with the second impurity region, with an upper sidewall and a lower sidewall of the storage node contact on a common side of the storage node contact not vertically aligned with each other.
Inventor(s): Seokjae WON of Suwon-si (KR) for samsung electronics co., ltd., Yoongoo KANG of Suwon-si (KR) for samsung electronics co., ltd., Jaehong PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/482
Abstract: the present disclosure provides semiconductor devices including a bit line. in some embodiments, a semiconductor device includes a substrate including a plurality of active regions defined by device isolation layers, a plurality of bit lines extending in a first horizontal direction on the substrate, a bit line contact between a first active region of the plurality of active regions and a first bit line of the plurality of bit lines on the first active region, and an active pad on a second active region of the plurality of active regions adjacent to the first active region. the bit line contact includes a first contact layer and a second contact layer on the first contact layer. the active pad is disposed to face the bit line contact.
20240324186. SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): KISEOK LEE of Suwon-si (KR) for samsung electronics co., ltd., Chansic YOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/485
Abstract: a semiconductor device includes active patterns on a substrate, gate structures in recesses of the active patterns and extending in the first direction, first contact plugs electrically connected to opposite edge portions of each of the active patterns, respectively, the first contact plugs being spaced apart from each other in each of the first and second directions and aligned in each of the first and second directions, first insulation spacers surrounding sidewalls of the first contact plugs, the first insulation spacers filling spaces between the first contact plugs in the second direction, a bit line structure filling an opening extending in the second direction between the first insulation spacers, the bit line structure contacting central portions of the active patterns, and a capacitor electrically connected to each of the first contact plugs.
Inventor(s): Kangin KIM of Suwon-si (KR) for samsung electronics co., ltd., Sangbin AHN of Suwon-si (KR) for samsung electronics co., ltd., Youngseung CHO of Suwon-si (KR) for samsung electronics co., ltd., Kyounghwan KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00, H01L29/423, H01L29/66, H01L29/78
CPC Code(s): H10B12/488
Abstract: an integrated circuit device includes a substrate including a plurality of active areas and a plurality of dummy active areas, and defines a plurality of word line trenches that cross the plurality of active areas and the plurality of dummy active area, extend in a first horizontal direction in parallel with each other and have an active side bottom surface exposing the plurality of active areas and a dummy side bottom surface exposing the plurality of dummy active areas. the dummy side bottom surface is at a lower vertical level than the active side bottom surface.
20240324189. SEMICONDUCTOR MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sena CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/50
Abstract: a semiconductor memory device includes a substrate having a memory cell region and a dummy cell region surrounding the memory cell region, wherein a plurality of memory cells are arranged in the memory cell region, a plurality of first active regions each having a bar shape in the memory cell region, the plurality of first active regions separated from each other by a first gap in a first direction and extending in a second direction perpendicular to the first direction, and a plurality of second active regions on the plurality of first active regions, the plurality of second active regions each having a circular shape and separated from each other by a second gap in the second direction.
Inventor(s): Yunho SONG of Suwon-si (KR) for samsung electronics co., ltd., Jooncheol KIM of Suwon-si (KR) for samsung electronics co., ltd., Bosu KIM of Suwon-si (KR) for samsung electronics co., ltd., Yeji KIM of Suwon-si (KR) for samsung electronics co., ltd., Subin SON of Suwon-si (KR) for samsung electronics co., ltd., Hyundon YUN of Suwon-si (KR) for samsung electronics co., ltd., Namkyeong LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/50
Abstract: an integrated circuit device includes a substrate including a cell array area and a peripheral circuit area next to the cell array area, an isolation layer defining an activation region of the substrate in the peripheral circuit area, the isolation layer including a first insulation pattern and a second insulation pattern surrounding the first insulation pattern, and a gate structure on the substrate in the peripheral circuit area, wherein the second insulation pattern includes one or more surfaces defining a recess into an upper surface of the substrate in a vertical direction, the vertical direction extending perpendicular to the upper surface of the substrate.
20240324192. ONE-TIME PROGRAMMABLE MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Eun Young LEE of Suwon-si (KR) for samsung electronics co., ltd., Shigenobu MAEDA of Suwon-si (KR) for samsung electronics co., ltd., Kwan Young KIM of Suwon-si (KR) for samsung electronics co., ltd., Bora KIM of Suwon-si (KR) for samsung electronics co., ltd., Hoonjin BANG of Suwon-si (KR) for samsung electronics co., ltd., Sangjin LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B20/25
CPC Code(s): H10B20/25
Abstract: a one-time programmable (otp) memory device includes: a semiconductor substrate having a write region and a read region; write gates disposed in the write region of the semiconductor substrate; read gates disposed in the read region of the semiconductor substrate; source/drain regions arranged adjacent to the write gates and the read gates and arranged in the semiconductor substrate; and a device isolation layer located between the write gates and arranged in the semiconductor substrate, wherein, in the semiconductor substrate, channel regions located below the write gates have a first conductivity type, wherein the source/drain regions have a second conductivity type, different from the first conductivity type, and wherein a pocket well is formed in the write region of the semiconductor substrate and has the second conductivity type.
20240324193. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): MinKyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Hakseon Kim of Suwon-si (KR) for samsung electronics co., ltd., Sunggil Kim of Suwon-si (KR) for samsung electronics co., ltd., Jumi Bak of Suwon-si (KR) for samsung electronics co., ltd., Kang-Oh Yun of Suwon-si (KR) for samsung electronics co., ltd., Dongjin Lee of Suwon-si (KR) for samsung electronics co., ltd., Sohyun Lee of Suwon-si (KR) for samsung electronics co., ltd., Junhee Lim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B41/35, H01L23/528, H01L25/065, H10B41/10, H10B41/27, H10B43/10, H10B43/27, H10B43/35, H10B80/00
CPC Code(s): H10B41/35
Abstract: a semiconductor device includes a substrate, a doped region on the substrate, the doped region including impurities of a first conductivity type at a first concentration, a gate structure on the substrate, and a first contact electrically connected to the doped region, the first contact including a first portion, a second portion on the first portion, and a third portion on the second portion, the first portion and the second portion including poly silicon, the third portion including at least one metallic material, and the second portion including impurities of the first conductivity type at a second concentration higher than the first concentration.
Inventor(s): Dongjin LEE of Suwon-si (KR) for samsung electronics co., ltd., Junhee LIM of Suwon-si (KR) for samsung electronics co., ltd., Hakseon KIM of Suwon-si (KR) for samsung electronics co., ltd., Kangoh YUN of Suwon-si (KR) for samsung electronics co., ltd., Sohyun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B41/35, G11C16/04, H01L25/065, H10B41/10, H10B41/27, H10B41/41, H10B80/00
CPC Code(s): H10B41/35
Abstract: an integrated circuit device includes a substrate including an active region including a central active region, base active regions and extended active regions integrated together and defined by a device isolation film. a drain region is located in the central active region, and source regions are respectively located in the base active regions. the base active regions are spaced apart from each other in different diagonal directions with respect to the central active region in a plan view. the extended active regions each have an l-shape, connect the central active region and the base active regions, and are spaced apart from each other. gate structures that respectively cross the base active regions and are spaced apart from each other on the substrate. the central active region, the extended active regions, the base active regions, and the gate structures configure pass transistors, and the pass transistors share the drain region.
20240324201. SEMICONDUCTOR MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kang Lib KIM of Suwon-si (KR) for samsung electronics co., ltd., Seahoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Junhee LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H10B41/27
CPC Code(s): H10B43/27
Abstract: a semiconductor memory device includes a substrate, a plurality of gate stack structures on the substrate that include a plurality of gate lines stacked and a plurality of insulating films between the plurality of gate lines, a plurality of first separation insulating films that are alternately stacked with the plurality of gate lines, where the plurality of gate stack structures and the plurality of first separation insulating films define a contact hole, a contact electrode that is in the contact hole and contacts the plurality of gate stack structures, and one or more second separation insulating film that is on an uppermost gate line of one or more of the plurality of gate stack structures and separates the contact electrode from the uppermost gate line.
Inventor(s): Shinhwan Kang of Suwon-si (KR) for samsung electronics co., ltd., Jae-Hwang Sim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H10B41/27
CPC Code(s): H10B43/27
Abstract: a 3d semiconductor memory device includes a source structure, a gate stack structure disposed on the source structure and comprising insulating patterns and conductive patterns which are alternately stacked, a through-plug, a pad in contact with the through-plug, and a pad insulating pattern under the pad. the conductive patterns include a selection conductive line in contact with the through-plug. the through-plug includes an extension plug portion and a parallel plug portion. a height of the pad is less than a height of the conductive pattern.
Inventor(s): Byungik YOO of Suwon-si (KR) for samsung electronics co., ltd., Seungbeom KO of Suwon-si (KR) for samsung electronics co., ltd., Taemok GWON of Suwon-si (KR) for samsung electronics co., ltd., Changjin SON of Suwon-si (KR) for samsung electronics co., ltd., Chadong YEO of Suwon-si (KR) for samsung electronics co., ltd., Seulji LEE of Suwon-si (KR) for samsung electronics co., ltd., Seungmin LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H10B41/27, H10B41/41, H10B43/40
CPC Code(s): H10B43/27
Abstract: a nonvolatile memory device includes a substrate including a memory cell region and a connection region; a mold structure including a plurality of gate electrodes and a plurality of mold insulating layers alternately stacked; a channel structure passing through the mold structure in the memory cell region; a first cell contact passing through the mold structure in the connection region, connected to a first gate electrode and electrically disconnected from a second gate electrode; a plurality of support structures surrounding the first cell contact planarly in the connection region and extending through the mold structure; and a dam structure located between the first cell contact and the second gate electrode in the connection region and apart from the first cell contact with an insulating ring therebetween.
Inventor(s): Jehong OH of Suwon-si (KR) for samsung electronics co., ltd., Younghwan JO of Suwon-si (KR) for samsung electronics co., ltd., Seulye KIM of Suwon-si (KR) for samsung electronics co., ltd., Moohyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Sunggil KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H10B41/27, H10B41/35, H10B41/41, H10B43/35, H10B43/40
CPC Code(s): H10B43/27
Abstract: a non-volatile memory device includes a substrate including a memory cell region and a connection region, a mold structure including a plurality of gate electrodes sequentially stacked on the memory cell region and stacked stepwise on the connection region, and a plurality of mold insulating layers alternately stacked with the plurality of gate electrodes, a channel hole vertically passing through the mold structure on the memory cell region, and a channel structure disposed in the channel hole, wherein the channel structure includes a gate insulating layer, a channel layer, and a buried insulating layer sequentially disposed in the channel hole, and the channel layer includes a grain having a size of about 20 nm to about 17 �m.
20240324219. INTEGRATED CIRCUIT DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Choasub KIM of Suwon-si (KR) for samsung electronics co., ltd., Chungjin KIM of Suwon-si (KR) for samsung electronics co., ltd., Youngho KWON of Suwon-si (KR) for samsung electronics co., ltd., Jungho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27
CPC Code(s): H10B43/27
Abstract: an integrated circuit device comprising: a substrate; a stack structure comprising interlayer insulating layers and gate electrodes; and a channel structure in the stack structure, wherein the gate electrodes comprise a first upper gate electrode at a highest position and a second upper gate electrode at a second-highest position, the interlayer insulating layers comprises a first interlayer insulating layer between the first upper gate electrode and the second upper gate electrode with a first thickness, a second interlayer insulating layer that has a second thickness, a lower surface of the first upper gate electrode is at a farther distance than or at an equal distance to a lower surface of the pad structure from the substrate, and an upper surface of the second upper gate electrode is at a closer distance than or at an equal distance to the lower surface of the pad structure from the substrate.
20240324221. MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kohji Kanamori of Suwon-si (KR) for samsung electronics co., ltd., Seogoo Kang of Suwon-si (KR) for samsung electronics co., ltd., Kyungdong Kim of Suwon-si (KR) for samsung electronics co., ltd., Seunghyun Lee of Suwon-si (KR) for samsung electronics co., ltd., Jeehoon Han of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, G11C5/06, G11C16/04, G11C16/08, H01L23/528, H01L25/065, H10B41/10, H10B41/27, H10B41/35, H10B41/40, H10B43/10, H10B43/35, H10B43/40, H10B80/00
CPC Code(s): H10B43/27
Abstract: a memory device is provided. the memory device includes a first cell array stack including first gate electrodes, a first channel structure, and first pad portions respectively connected to the first gate electrodes and having a step shape, a second cell array stack disposed on the first cell array stack and including second gate electrodes, a second channel structure, and second pad portions respectively connected to the second gate electrodes and having a step shape, wherein the second pad portions overlap the first pad portions in the first direction, and a vertical contact passing through any one of the first pad portions, first extension portions below the any one of the first pad portions, any one of the second pad portions, and second extension portions below the any one of the second pad portions, to extend in the first direction.
Inventor(s): JUSEONG MIN of Suwon-si (KR) for samsung electronics co., ltd., JAE-BOK BAEK of Suwon-si (KR) for samsung electronics co., ltd., JEEHOON HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/40, H10B41/27, H10B41/41, H10B43/27
CPC Code(s): H10B43/40
Abstract: a semiconductor device includes: a gate electrode on a semiconductor substrate; a gate dielectric pattern between the gate electrode and the semiconductor substrate; a first semiconductor pattern on the semiconductor substrate adjacent to a first side of the gate electrode; and a second semiconductor pattern on the semiconductor substrate adjacent to a second side of the gate electrode, wherein the first semiconductor pattern includes: a first via part in contact with the semiconductor substrate; and a first plate part on the first via part, wherein the second semiconductor pattern includes: a second via part in contact with the semiconductor substrate; and a second plate part on the second via part, wherein each of the first and second plate parts extends lengthwise in a direction parallel to a top surface of the semiconductor substrate.
Inventor(s): Minsu Jeong of Suwon-si (KR) for samsung electronics co., ltd., Ahreum Kim of Suwon-si (KR) for samsung electronics co., ltd., Pansuk Kwak of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/40, H01L23/522, H10B41/27, H10B41/41, H10B43/27
CPC Code(s): H10B43/40
Abstract: an example semiconductor device includes a first electrode structure, including a first connection portion and first finger portions extending from the first connection portion, and a second electrode structure, including a second connection portion and second finger portions extending from the second connection portion and alternately arranged with the first finger portions. the first electrode structure may include first lines and first contacts alternately stacked, the second electrode structure may include second lines and second contacts alternately stacked, and the first and second lines and the first and second contacts may be arranged at a first pitch on n levels among a plurality of levels, and are arranged at a second pitch greater than the first pitch on m levels of the plurality of levels, where n may be 3 or more, and m may be less than n.
Inventor(s): Kyeonghoon Park of Suwon-si (KR) for samsung electronics co., ltd., Jaebok Baek of Suwon-si (KR) for samsung electronics co., ltd., Janggn Yun of Suwon-si (KR) for samsung electronics co., ltd., Jeehoon Han of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/40, G11C16/04, H01L23/528, H01L25/065, H10B41/10, H10B41/27, H10B41/35, H10B41/40, H10B43/10, H10B43/27, H10B43/35, H10B80/00
CPC Code(s): H10B43/40
Abstract: a non-volatile memory device includes a peripheral circuit structure and a cell array structure on the peripheral circuit structure, where the cell array structure includes a base insulation layer, a common source line layer on the base insulation layer, a buffer insulation layer on the common source line layer, and a cell stack on the buffer insulation layer, where the cell stack includes a plurality of gate electrodes and a plurality of insulation layers, where the plurality of gate electrodes have a staircase shape, a plurality of gate contact plugs that extend into the cell stack, and a plurality of protection structures between the plurality of gate contact plugs and the base insulation layer.
Inventor(s): Jeonil Lee of Suwon-si (KR) for samsung electronics co., ltd., Kyunghwan Lee of Suwon-si (KR) for samsung electronics co., ltd., Youngin Goh of Suwon-si (KR) for samsung electronics co., ltd., Yukio Hayakawa of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B51/20, H10B51/30
CPC Code(s): H10B51/20
Abstract: a 3d feram is provided. the 3d feram includes a semiconductor patterns stacked in a vertical direction on a substrate and spaced apart from each other in a first horizontal direction, bit lines on first side surface of the semiconductor patterns, extending in the first horizontal direction, and spaced apart from each other in the vertical direction, first electrodes on second side surfaces of the semiconductor patterns and spaced apart from each other in both the vertical direction and the first horizontal direction, a ferroelectric layer on the first electrodes, second electrodes on the ferroelectric layers, extending in the first horizontal direction, and spaced apart from each other in the vertical direction, and word lines between two adjacent semiconductor patterns extending in the vertical direction.
Inventor(s): Jeonil Lee of Suwon-si (KR) for samsung electronics co., ltd., Kyunghwan Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B53/20, H01L21/28, H01L29/51, H01L29/78, H10B51/10, H10B51/20, H10B51/40, H10B53/10, H10B53/40
CPC Code(s): H10B53/20
Abstract: a three-dimensional (3d) semiconductor memory device includes a plurality of memory cells stacked in a vertical direction, each of the plurality of memory cells including a cell transistor and a cell capacitor. the cell capacitor includes a first electrode connected to a first source/drain region of the cell transistor, wherein a through hole is formed in the first electrode and the inner surface of the first electrode is formed in a shape having concave portions and convex portions in plan view, a capacitor insulating layer in the through hole, and a second electrode in the capacitor insulating layer and filling the through hole.
20240324239. SEMICONDUCTOR MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Daewon Ha of Suwon-si (KR) for samsung electronics co., ltd., Kyunghwan Lee of Suwon-si (KR) for samsung electronics co., ltd., Myunghun Woo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B53/30, G11C5/06, H01L21/28, H01L29/51, H01L29/78, H10B51/10, H10B51/30, H10B53/10
CPC Code(s): H10B53/30
Abstract: a semiconductor memory device includes a plurality of memory cells each including a first vertical channel transistor (vct) and a second vct arranged in a vertical direction and connected to each other in series, the plurality of memory cells respectively including a plurality of ferroelectric capacitors connected to the second vct in parallel and arranged in the vertical direction, wherein the plurality of memory cells are arranged in columns and rows in a first horizontal direction and a second horizontal direction that is different from the first horizontal direction.
Inventor(s): Hyungjong JEONG of Suwon-si (KR) for samsung electronics co., ltd., Seung Pil KO of Suwon-si (KR) for samsung electronics co., ltd., Kyounghun RYU of Suwon-si (KR) for samsung electronics co., ltd., Byoungjae BAE of Suwon-si (KR) for samsung electronics co., ltd., Kwangil SHIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B61/00, H10N50/01, H10N50/20
CPC Code(s): H10B61/00
Abstract: a magnetic memory device may include a substrate, a lower interconnection line on the substrate, a data storage structure on the lower interconnection line, and a lower contact plug between the lower interconnection line and the data storage structure and extended in a first direction perpendicular to a top surface of the substrate to connect the lower interconnection line to the data storage structure. an upper portion of the lower contact plug may have a first width in a second direction parallel to the top surface of the substrate, and a lower portion of the lower contact plug may have a second width in the second direction. the first width may be larger than the second width.
20240324243. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yongjae KIM of Suwon-si (KR) for samsung electronics co., ltd., Woojin KIM of Suwon-si (KR) for samsung electronics co., ltd., Junghoon BAK of Suwon-si (KR) for samsung electronics co., ltd., Hyunchul SHIN of Suwon-si (KR) for samsung electronics co., ltd., Hyeonah JO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B61/00, H01L23/522
CPC Code(s): H10B61/22
Abstract: a semiconductor device includes a plurality of data storage patterns on a substrate, the plurality of data storage patterns spaced apart from each other in a first direction parallel to an upper surface of the substrate, a first upper conductive line on the plurality of data storage patterns, extending in the first direction and connected to the plurality of data storage patterns, a second upper conductive line on the first upper conductive line and extending in the first direction and a plurality of via contacts between the first upper conductive line and the second upper conductive line and spaced apart from each other in the first direction. the plurality of via contacts are arranged to be offset from the plurality of data storage patterns in the first direction.
Inventor(s): Kiyeon YANG of Suwon-si (KR) for samsung electronics co., ltd., Donggeon GU of Hwaseong-si (KR) for samsung electronics co., ltd., Bonwon KOO of Suwon-si (KR) for samsung electronics co., ltd., Jeonghee PARK of Hwaseong-si (KR) for samsung electronics co., ltd., Hajun SUNG of Suwon-si (KR) for samsung electronics co., ltd., Dongho AHN of Hwaseong-si (KR) for samsung electronics co., ltd., Zhe WU of Hwaseong-si (KR) for samsung electronics co., ltd., Changseung LEE of Suwon-si (KR) for samsung electronics co., ltd., Minwoo CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B63/00, H10N70/00
CPC Code(s): H10B63/24
Abstract: provided are a self-selecting memory device having polarity dependent threshold voltage shift characteristics and/or a memory apparatus including the self-selecting memory device. the memory device includes a first electrode, a second electrode apart from and facing the first electrode, and a memory layer between the first electrode and the second electrode. the memory layer has ovonic threshold switching characteristics and is configured to have a threshold voltage of the memory layer be changed as a density of active traps in the memory layer is changed, the threshold voltage changing according to the polarity and the intensity of a bias voltage applied to the memory layer. furthermore, an element composition distribution is configured to be maintained constant in the memory layer in response to the threshold voltage of the memory layer changing.
20240324260. DISPLAY PANEL AND ELECTRONIC DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Chul Joon HEO of Suwon-si (KR) for samsung electronics co., ltd., Kyung Bae PARK of Suwon-si (KR) for samsung electronics co., ltd., Jeong Il PARK of Suwon-si (KR) for samsung electronics co., ltd., Daiki MINAMI of Suwon-si (KR) for samsung electronics co., ltd., Hwijoung SEO of Suwon-si (KR) for samsung electronics co., ltd., Sungyoung YUN of Suwon-si (KR) for samsung electronics co., ltd., Younhee LIM of Suwon-si (KR) for samsung electronics co., ltd., Juhyung LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K39/34, G06V40/13, H10K59/123, H10K59/35
CPC Code(s): H10K39/34
Abstract: disclosed are a display panel and an electronic device. the display panel may include a substrate, first, second, and third light emitting diodes on the substrate and configured to emit light of first, second, and third wavelength spectra in a visible light wavelength spectrum, respectively, and first, second, third organic photoelectric conversion diodes overlapping the first, second, and third light emitting diode along a thickness direction of the substrate, respectively, may be provided. each of first, second, third organic photoelectric conversion diodes may be configured to selectively absorb a portion of the visible light wavelength spectrum and convert the absorbed light into an electrical signal.
Inventor(s): Sungyoung YUN of Suwon-si (KR) for samsung electronics co., ltd., Kyung Bae PARK of Suwon-si (KR) for samsung electronics co., ltd., Chul Joon HEO of Suwon-si (KR) for samsung electronics co., ltd., Hwijoung SEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K59/65, G06V40/13, H10K59/35, H10K59/80, H10K102/00
CPC Code(s): H10K59/65
Abstract: a sensor-embedded display panel includes a substrate, a plurality of light emitting elements on the substrate and configured to emit light of different wavelength spectra belonging to the visible light wavelength spectrum, and a plurality of sensors on the substrate and configured to selectively sense light of any one of a green wavelength spectrum and a red wavelength spectrum. each of the sensors includes a photoelectric conversion layer that includes a first wavelength-selective photoelectric conversion material having a first maximum absorption wavelength in a wavelength range of about 500 nm to about 600 nm and a thickness of the buffer layer is about 20 nm to about 50 nm, or the photoelectric conversion layer includes a second wavelength-selective photoelectric conversion material having a second maximum absorption wavelength in a wavelength range of greater than about 600 nm and less than about 750 nm and a thickness of the buffer layer is about 70 nm to about 110 nm.
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Virendra Kumar RAI of Suwon-si (KR) for samsung electronics co., ltd., Myungsun Sim of Suwon-si (KR) for samsung electronics co., ltd., Yong Joo Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K50/12, H10K85/40
CPC Code(s): H10K85/342
Abstract: an organometallic compound represented by formula 1:
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Virendra Kumar RAI of Suwon-si (KR) for samsung electronics co., ltd., Myungsun Sim of Suwon-si (KR) for samsung electronics co., ltd., Yong Joo Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K50/12, H10K85/40
CPC Code(s): H10K85/342
Abstract:
m(l)(l) formula 1
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Virendra Kumar RAI of Suwon-si (KR) for samsung electronics co., ltd., Myungsun Sim of Suwon-si (KR) for samsung electronics co., ltd., Yong Joo Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K50/12, H10K85/40
CPC Code(s): H10K85/342
Abstract: wherein, mis a transition metal, lis a ligand represented by formula 1a, lis a ligand represented by formula 1b, and n1 and n2 are each independently 1 or 2:
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Virendra Kumar RAI of Suwon-si (KR) for samsung electronics co., ltd., Myungsun Sim of Suwon-si (KR) for samsung electronics co., ltd., Yong Joo Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K50/12, H10K85/40
CPC Code(s): H10K85/342
Abstract:
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Virendra Kumar RAI of Suwon-si (KR) for samsung electronics co., ltd., Myungsun Sim of Suwon-si (KR) for samsung electronics co., ltd., Yong Joo Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K50/12, H10K85/40
CPC Code(s): H10K85/342
Abstract: with the proviso that i) xis c linked to yin formula 2 and xis c linked to yin formula 2; ii) xis c linked to yin formula 2 and xis c linked to yin formula 2; or iii) xis c linked to yin formula 2 and xis c linked to yin formula 2; wherein the remaining substituent groups of formulae 1a, 1b, and 2 are as provided herein.
Inventor(s): Hwang Suk Kim of Suwon-si (KR) for samsung electronics co., ltd., Youngmin You of Seoul (KR) for samsung electronics co., ltd., Chung Thanh PHAM of Seoul (KR) for samsung electronics co., ltd., Sreenivas AVULA of Seoul (KR) for samsung electronics co., ltd., Joonghyuk Kim of Suwon-si (KR) for samsung electronics co., ltd., Yongsik Jung of Suwon-si (KR) for samsung electronics co., ltd., Hyeonho Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F1/00, C09K11/06, H10K50/12
CPC Code(s): H10K85/371
Abstract: an organometallic compound represented by formula 1:
Inventor(s): Hwang Suk Kim of Suwon-si (KR) for samsung electronics co., ltd., Youngmin You of Seoul (KR) for samsung electronics co., ltd., Chung Thanh PHAM of Seoul (KR) for samsung electronics co., ltd., Sreenivas AVULA of Seoul (KR) for samsung electronics co., ltd., Joonghyuk Kim of Suwon-si (KR) for samsung electronics co., ltd., Yongsik Jung of Suwon-si (KR) for samsung electronics co., ltd., Hyeonho Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F1/00, C09K11/06, H10K50/12
CPC Code(s): H10K85/371
Abstract:
Inventor(s): Hwang Suk Kim of Suwon-si (KR) for samsung electronics co., ltd., Youngmin You of Seoul (KR) for samsung electronics co., ltd., Chung Thanh PHAM of Seoul (KR) for samsung electronics co., ltd., Sreenivas AVULA of Seoul (KR) for samsung electronics co., ltd., Joonghyuk Kim of Suwon-si (KR) for samsung electronics co., ltd., Yongsik Jung of Suwon-si (KR) for samsung electronics co., ltd., Hyeonho Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F1/00, C09K11/06, H10K50/12
CPC Code(s): H10K85/371
Abstract: wherein xis n or c(r), and xis n or c(r); at least one of xand xis n; yis a single bond, o, s, se, n(r), c(r)(r), si(r)(r), ge(r)(r), b(r), p(r), p(═o)(r), s(═o), or c(═o); n1 is 0, 1, or 2; aand aare each independently a c-ccarbocyclic group or a c-cheterocyclic group; wherein the remaining substituent groups are as defined herein.
Samsung Electronics Co., Ltd. patent applications on September 26th, 2024
- Samsung Electronics Co., Ltd.
- A47L9/04
- A47L9/28
- CPC A47L9/0477
- Samsung electronics co., ltd.
- A47L9/30
- CPC A47L9/2815
- A47L11/40
- CPC A47L9/2826
- A46B5/00
- A47L11/282
- CPC A47L11/4088
- A47L15/50
- A47L15/42
- CPC A47L15/508
- B01D53/26
- B01D53/04
- CPC B01D53/261
- B65G1/04
- CPC B65G1/0457
- C02F9/00
- H01L21/02
- H01L21/306
- CPC C02F9/00
- C07C69/94
- G03F7/038
- G03F7/039
- CPC C07C69/94
- C09D133/14
- C09D5/00
- C09D7/61
- C09D7/63
- C09D133/08
- C09D143/02
- CPC C09D133/14
- C09G1/02
- H01L21/3205
- H01L21/321
- CPC C09G1/02
- C07F5/00
- C09K3/14
- H01L21/3105
- C09G1/04
- CPC C09G1/04
- C09K13/00
- H01L21/3213
- CPC C09K13/00
- C09K13/06
- CPC C09K13/06
- C23C16/44
- CPC C23C16/4412
- C23C16/458
- C23C16/46
- CPC C23C16/4586
- D06F58/24
- D06F58/26
- CPC D06F58/24
- F24C7/08
- F24C15/10
- CPC F24C7/083
- F24C15/20
- F24C15/00
- CPC F24C15/2007
- F24F11/64
- F24F11/65
- F24F11/86
- F24F110/10
- CPC F24F11/64
- F25B30/02
- F25B5/02
- F25B41/20
- F25B41/31
- F25D21/12
- CPC F25B30/02
- F25D23/02
- CPC F25D23/028
- F25D23/06
- CPC F25D23/064
- G01J1/44
- G01J1/02
- G01J1/18
- H03F3/45
- CPC G01J1/44
- G01R1/067
- G01R1/073
- G01R31/28
- CPC G01R1/06794
- G06F30/367
- G06T7/00
- CPC G01R31/2831
- CPC G01R31/2896
- G01S17/26
- G01S7/4863
- G01S7/4865
- G01S17/894
- G06F1/06
- CPC G01S17/26
- G02B6/42
- H01L23/00
- H01L23/498
- H01L25/065
- CPC G02B6/4219
- G02B7/02
- CPC G02B7/022
- G02B27/01
- CPC G02B27/0149
- G03F1/36
- G03F1/84
- CPC G03F1/36
- G03F7/004
- CPC G03F7/0042
- G03F7/20
- CPC G03F7/0048
- C08F212/14
- C08F220/18
- CPC G03F7/039
- G05F1/567
- G05F1/46
- G05F3/26
- CPC G05F1/567
- G06F1/08
- H01L25/10
- H03K5/133
- H03K5/1534
- CPC G06F1/08
- G06F1/3218
- G06F1/28
- CPC G06F1/3218
- G06F1/3296
- G06F1/3287
- H02J7/00
- CPC G06F1/3296
- G06F3/0482
- A47J36/32
- G06F3/04847
- CPC G06F3/0482
- G06F3/04845
- G06F1/16
- G06F3/0488
- CPC G06F3/04845
- G06F3/0481
- CPC G06F3/0488
- G06F3/06
- CPC G06F3/0604
- CPC G06F3/0608
- CPC G06F3/0613
- CPC G06F3/0619
- CPC G06F3/0659
- G06F3/14
- H04L67/01
- CPC G06F3/14
- G06F3/0484
- CPC G06F3/1423
- G09F9/302
- CPC G06F3/1446
- G06F7/498
- G06F1/03
- G06F17/10
- CPC G06F7/4988
- G06F9/38
- G06F9/30
- G06F9/54
- G06F11/30
- CPC G06F9/3856
- G06F9/455
- CPC G06F9/45558
- G06F9/48
- CPC G06F9/4881
- G06F9/52
- CPC G06F9/526
- G06F11/10
- G06F13/42
- CPC G06F11/1004
- G06F11/22
- CPC G06F11/2257
- G06F15/78
- CPC G06F11/3062
- G06F12/02
- CPC G06F12/023
- G06F12/0811
- CPC G06F12/0811
- G06F12/0891
- G06F12/0895
- CPC G06F12/0891
- G06F13/28
- CPC G06F13/28
- G06F9/4401
- G06F13/16
- G06F13/40
- G06N20/00
- H04L49/356
- CPC G06F13/4234
- G06F30/27
- CPC G06F30/27
- G06F30/333
- CPC G06F30/333
- G06F30/398
- G06F30/392
- CPC G06F30/398
- G06K7/14
- CPC G06K7/1417
- G06Q10/0631
- G06Q10/0637
- G06Q10/0639
- H04N19/176
- H04N19/18
- H04N19/46
- CPC G06Q10/06312
- G06Q20/38
- G06Q20/40
- CPC G06Q20/3829
- G06T5/40
- G06T5/50
- G06T7/90
- G06V10/56
- G06V10/764
- G06V10/82
- CPC G06T5/40
- G06T3/18
- G06T3/4046
- G06T3/4053
- G06T5/90
- G06T7/20
- CPC G06T5/50
- G06T5/70
- G06T7/33
- G06T11/00
- CPC G06T5/70
- G06V10/44
- G06T5/00
- G06T7/11
- G06T7/13
- CPC G06T5/90
- G06T3/403
- G06T5/92
- G06T7/136
- G06T7/60
- H01L21/67
- CPC G06T7/0004
- CPC G06T7/0006
- G06T7/73
- G06T3/4038
- G06T7/50
- CPC G06T7/75
- G06T19/00
- G06F3/01
- G06Q30/0601
- G06V20/20
- G09G5/377
- CPC G06T19/006
- G06V10/143
- G06T7/30
- G06V10/60
- CPC G06V10/143
- G06V30/22
- G06F3/0483
- G06F3/04883
- G06F40/103
- G06V30/19
- G06V30/30
- CPC G06V30/22
- G08B21/04
- CPC G08B21/043
- G09G3/3233
- H10K59/131
- CPC G09G3/3233
- G09G3/3266
- G09G3/3275
- CPC G09G3/3266
- G10L15/06
- CPC G10L15/063
- G10L15/22
- G10L15/28
- CPC G10L15/22
- G10L21/0208
- CPC G10L21/0208
- G11B27/036
- G06V10/74
- G06V20/40
- G11B27/34
- CPC G11B27/036
- G11C7/04
- G11C7/14
- G11C7/22
- CPC G11C7/04
- H03L7/099
- CPC G11C7/222
- G11C11/16
- H01F10/32
- H10B61/00
- H10N50/10
- H10N50/85
- CPC G11C11/161
- G11C11/4076
- G11C11/4096
- CPC G11C11/4076
- G11C11/412
- G11C11/419
- H01L23/528
- H10B10/00
- CPC G11C11/412
- G11C16/10
- G11C16/04
- G11C16/08
- G11C16/24
- H01L25/18
- H10B41/27
- H10B43/27
- CPC G11C16/10
- G11C16/34
- G11C16/26
- CPC G11C16/3431
- G11C29/52
- G11C7/10
- CPC G11C29/52
- H01B7/04
- H01B7/02
- H01G4/08
- H01G4/14
- H05K1/18
- CPC H01B7/04
- H01J37/32
- C23C16/505
- H05K9/00
- CPC H01J37/32449
- H01L21/027
- G03F1/70
- G03F1/82
- H01L21/8234
- CPC H01L21/0274
- B01J35/39
- CPC H01L21/67051
- H01L21/68
- H01L21/66
- H01L21/673
- H01L21/683
- CPC H01L21/681
- CPC H01L21/6833
- H01L21/60
- CPC H01L21/6838
- H01L23/31
- H01L21/56
- H01L23/29
- H01L25/00
- CPC H01L23/3157
- H01L21/78
- H10B80/00
- CPC H01L23/3185
- H01L23/367
- CPC H01L23/367
- H01L23/373
- CPC H01L23/3675
- H01L23/427
- CPC H01L23/427
- H01L23/46
- H05K7/20
- CPC H01L23/46
- CPC H01L23/473
- H01L23/473
- H01L23/48
- H01L29/06
- H01L29/423
- H01L29/775
- H01L29/786
- CPC H01L23/481
- H01L21/768
- H01L23/522
- H01L21/52
- CPC H01L23/49811
- H01L23/64
- CPC H01L23/49838
- H05K1/11
- H01L21/48
- CPC H01L23/49894
- H01L27/088
- CPC H01L23/5226
- H01L23/28
- H01L23/532
- H10B12/00
- CPC H01L23/5228
- CPC H01L23/528
- CPC H01L23/5283
- H01L23/538
- CPC H01L23/5383
- H01L23/15
- CPC H01L23/5384
- H01L23/544
- CPC H01L23/544
- H01L23/492
- CPC H01L23/562
- H04N23/52
- CPC H01L24/05
- CPC H01L24/08
- CPC H01L24/14
- CPC H01L24/20
- CPC H01L24/27
- CPC H01L24/73
- CPC H01L24/83
- CPC H01L25/0652
- CPC H01L25/0657
- CPC H01L25/105
- G11C5/02
- G11C5/04
- H01L25/16
- CPC H01L25/16
- CPC H01L25/50
- H01L27/02
- H02H9/04
- CPC H01L27/0285
- CPC H01L27/088
- H01L21/762
- H01L27/092
- H01L21/8238
- H01L29/49
- H01L29/66
- CPC H01L27/092
- H01L29/417
- H01L21/822
- CPC H01L27/0922
- H01L27/12
- CPC H01L27/124
- H01L27/146
- H04N25/40
- CPC H01L27/14605
- CPC H01L27/1462
- CPC H01L27/14623
- C07D409/14
- C07D421/14
- C07D491/048
- C07D491/16
- C07D495/04
- C07D495/16
- C07D517/04
- C07D517/16
- C07F7/08
- H10K59/65
- CPC H01L27/1463
- H04N25/704
- CPC H01L27/14634
- CPC H01L27/14636
- CPC H01L28/55
- H01G4/30
- CPC H01L28/60
- CPC H01L28/75
- H01L29/08
- CPC H01L29/0665
- CPC H01L29/0673
- CPC H01L29/41725
- CPC H01L29/41733
- H01L29/40
- CPC H01L29/41775
- CPC H01L29/42392
- CPC H01L29/66439
- CPC H01L29/66553
- H01L29/78
- CPC H01L29/7848
- CPC H01L29/7856
- H01L29/792
- CPC H01L29/7926
- H01L31/02
- H01L31/107
- CPC H01L31/02027
- H01L33/00
- CPC H01L33/005
- H01L33/62
- H01L33/38
- CPC H01L33/62
- H01Q1/22
- H01Q1/18
- CPC H01Q1/2266
- H01Q1/27
- H01Q1/38
- H01Q7/00
- CPC H01Q1/273
- H01R13/66
- G01N27/04
- CPC H01R13/6683
- H02J50/10
- H02J50/80
- CPC H02J50/10
- H02J50/12
- CPC H02J50/12
- H02M1/42
- H02M1/00
- H02M7/06
- CPC H02M1/4291
- H02M3/07
- H02M1/38
- CPC H02M3/07
- H03B5/04
- H03B5/24
- CPC H03B5/04
- H03F3/24
- H04B1/04
- CPC H03F3/245
- H03K5/24
- H03K5/00
- CPC H03K5/249
- H04B1/00
- H01Q3/24
- H04B7/06
- H04B7/08
- CPC H04B1/0064
- H03F1/56
- H03F3/21
- CPC H04B1/04
- H04B7/0413
- H04L5/00
- CPC H04B7/0413
- H04B17/318
- CPC H04B7/0626
- CPC H04B7/0817
- H04B10/114
- CPC H04B10/1149
- H04B17/24
- H04B17/345
- H04L27/26
- H04W16/18
- H04W24/10
- H04W72/541
- CPC H04B17/24
- H04W24/08
- CPC H04B17/328
- H04J13/00
- H04W72/0446
- H04W72/0453
- H04W72/20
- CPC H04J13/004
- H04L1/00
- H04L25/06
- CPC H04L1/0003
- CPC H04L5/0051
- CPC H04L5/0053
- CPC H04L5/0091
- H04L7/033
- H03L7/08
- CPC H04L7/033
- H04L25/02
- H04W48/10
- H04W84/06
- CPC H04L25/0204
- CPC H04L25/0214
- H04W84/12
- CPC H04L25/0228
- H04L47/125
- H04L43/0811
- H04L47/127
- CPC H04L47/125
- H04L47/2425
- H04W28/02
- CPC H04L47/2425
- H04L9/40
- H04W92/18
- CPC H04L63/108
- H04L67/1004
- CPC H04L67/1004
- H04M1/72415
- CPC H04M1/72415
- H04N19/103
- H04N19/119
- H04N19/423
- H04N19/503
- H04N19/593
- H04N19/91
- CPC H04N19/103
- H04N19/184
- CPC H04N19/184
- H04N19/137
- H04N19/159
- H04N19/186
- CPC H04N19/423
- H04N19/52
- CPC H04N19/52
- H04N21/231
- H04N21/266
- H04N21/845
- CPC H04N21/23106
- H04N21/25
- H04N21/442
- CPC H04N21/251
- H04N21/233
- H04N21/234
- H04N21/422
- H04N21/472
- CPC H04N21/44222
- H04N23/63
- H04N23/45
- H04N23/58
- CPC H04N23/632
- H04N23/67
- H04N7/01
- CPC H04N23/67
- H04N23/69
- G06V10/40
- H04N23/61
- H04N23/667
- H04N23/90
- CPC H04N23/69
- H04N23/80
- H04N25/618
- H04N25/779
- H04N25/78
- CPC H04N23/80
- H04N23/84
- H04N25/131
- CPC H04N23/843
- H04N25/533
- H04N25/46
- CPC H04N25/533
- H04N25/683
- CPC H04N25/683
- H04N25/77
- CPC H04N25/77
- H04N25/772
- CPC H04N25/772
- H04N25/76
- H03K4/06
- CPC H04N25/7795
- G01S7/481
- H04N13/289
- H04N25/53
- H04N25/58
- CPC H04N25/78
- H04R5/04
- G06F3/16
- H04R5/02
- H04S3/00
- CPC H04R5/04
- H04W4/90
- H04W4/38
- CPC H04W4/90
- H04W12/041
- H04W12/06
- CPC H04W12/041
- H04W76/28
- H04W76/40
- CPC H04W24/10
- H04W28/06
- CPC H04W28/06
- H04W76/19
- H04W28/26
- CPC H04W28/26
- H04W36/00
- H04W36/14
- H04W36/30
- H04W76/16
- H04W76/30
- CPC H04W36/0033
- H04W88/06
- CPC H04W36/0058
- H04W36/08
- CPC H04W36/0072
- CPC H04W36/0083
- H04W36/32
- CPC H04W36/08
- CPC H04W36/083
- CPC H04W36/14
- H04W60/04
- H04W76/10
- CPC H04W36/32
- H04W76/27
- CPC H04W36/324
- H04W36/24
- H04W48/20
- CPC H04W48/10
- H04W48/16
- CPC H04W48/16
- H04W52/02
- CPC H04W52/0229
- H04W64/00
- CPC H04W52/0261
- H04W52/14
- H04L5/14
- H04W52/28
- H04W52/36
- CPC H04W52/146
- H04W52/26
- H04B7/0452
- CPC H04W52/267
- H04W56/00
- H04W74/0833
- CPC H04W56/0045
- H04W72/25
- CPC H04W64/00
- H04M1/72457
- CPC H04W64/006
- H04W68/02
- H04M1/72412
- H04M1/725
- H04M19/04
- H04W4/02
- H04W4/80
- H04W84/18
- CPC H04W68/02
- H04W72/04
- H04W68/00
- CPC H04W72/04
- H04W72/02
- H04W74/0808
- H04W72/044
- H04B17/309
- H04W52/24
- H04W52/42
- H04W72/23
- H04W84/04
- CPC H04W72/046
- H04W72/115
- H04L1/1812
- H04W72/12
- H04W72/231
- CPC H04W72/115
- H04W72/51
- H04W76/20
- CPC H04W72/12
- H04W72/1268
- H04L1/1867
- CPC H04W72/1268
- H04W72/21
- CPC H04W72/21
- H04W72/566
- H04W72/40
- H04W72/543
- CPC H04W72/40
- H04W72/53
- H04L1/1829
- CPC H04W72/53
- H04W74/00
- CPC H04W74/006
- H04W74/08
- CPC H04W74/08
- H04L67/306
- H04W76/38
- CPC H04W76/10
- H04W76/15
- H04W76/11
- H04W76/12
- H04W80/08
- H04W84/20
- CPC H04W76/15
- H04W80/02
- CPC H04W76/19
- H04W76/22
- H04W76/23
- CPC H04W76/22
- H04W76/25
- H04L1/1607
- CPC H04W76/25
- H04L47/36
- H04L47/43
- H04L69/166
- H04L69/22
- H04L69/321
- CPC H04W76/27
- CPC H04W76/28
- CPC H04W76/40
- H05K1/02
- CPC H05K1/0225
- H05K5/04
- CPC H05K5/04
- CPC H10B10/125
- CPC H10B12/02
- CPC H10B12/09
- CPC H10B12/315
- CPC H10B12/482
- CPC H10B12/485
- CPC H10B12/488
- CPC H10B12/50
- H10B20/25
- CPC H10B20/25
- H10B41/35
- H10B41/10
- H10B43/10
- H10B43/35
- CPC H10B41/35
- H10B41/41
- CPC H10B43/27
- H10B43/40
- G11C5/06
- H10B41/40
- CPC H10B43/40
- H10B51/20
- H10B51/30
- CPC H10B51/20
- H10B53/20
- H01L21/28
- H01L29/51
- H10B51/10
- H10B51/40
- H10B53/10
- H10B53/40
- CPC H10B53/20
- H10B53/30
- CPC H10B53/30
- H10N50/01
- H10N50/20
- CPC H10B61/00
- CPC H10B61/22
- H10B63/00
- H10N70/00
- CPC H10B63/24
- H10K39/34
- G06V40/13
- H10K59/123
- H10K59/35
- CPC H10K39/34
- H10K59/80
- H10K102/00
- CPC H10K59/65
- H10K85/30
- C07F15/00
- C09K11/06
- H10K50/12
- H10K85/40
- CPC H10K85/342
- C07F1/00
- CPC H10K85/371
