Samsung electronics co., ltd. (20240324237). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Kyunghwan Lee of Suwon-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324237 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
The abstract describes a three-dimensional semiconductor memory device with stacked memory cells in a vertical direction, each cell consisting of a transistor and a capacitor. The capacitor includes a first electrode connected to a source/drain region of the cell transistor, with a through hole in the electrode, a capacitor insulating layer in the hole, and a second electrode filling the hole.
- Memory cells are stacked vertically in the device.
- Each cell comprises a transistor and a capacitor.
- The capacitor has a unique structure with a through hole in the first electrode.
- The first electrode is connected to a source/drain region of the transistor.
- The capacitor insulating layer is located in the through hole.
- The second electrode fills the through hole.
Potential Applications: - High-density memory storage in electronic devices. - Improved performance and efficiency in data storage applications. - Advancements in semiconductor technology for various electronic devices.
Problems Solved: - Increased memory storage capacity in a compact space. - Enhanced data retention and retrieval speed. - Efficient use of vertical space for memory cells.
Benefits: - Higher memory capacity in a smaller footprint. - Faster data access and processing speeds. - Enhanced overall performance of electronic devices.
Commercial Applications: Title: Advanced Three-Dimensional Semiconductor Memory Devices for Enhanced Data Storage This technology can be utilized in smartphones, tablets, computers, and other electronic devices requiring high-speed and high-capacity memory storage solutions. The market implications include improved device performance, increased data storage capabilities, and enhanced user experience.
Prior Art: Further research can be conducted in the field of three-dimensional semiconductor memory devices, exploring similar structures and configurations to assess the novelty and uniqueness of this innovation.
Frequently Updated Research: Stay updated on advancements in semiconductor memory technology, particularly in the development of three-dimensional memory devices for improved data storage solutions.
Questions about Three-Dimensional Semiconductor Memory Devices: 1. How does the unique capacitor structure in this memory device contribute to its performance compared to traditional memory devices? 2. What potential challenges could arise in the mass production and integration of this advanced memory technology into commercial electronic devices?
Original Abstract Submitted
a three-dimensional (3d) semiconductor memory device includes a plurality of memory cells stacked in a vertical direction, each of the plurality of memory cells including a cell transistor and a cell capacitor. the cell capacitor includes a first electrode connected to a first source/drain region of the cell transistor, wherein a through hole is formed in the first electrode and the inner surface of the first electrode is formed in a shape having concave portions and convex portions in plan view, a capacitor insulating layer in the through hole, and a second electrode in the capacitor insulating layer and filling the through hole.
