Samsung electronics co., ltd. (20240324234). THREE-DIMENSIONAL (3D) FERROELECTRIC RANDOM ACCESS MEMORY (FERAM) AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
THREE-DIMENSIONAL (3D) FERROELECTRIC RANDOM ACCESS MEMORY (FERAM) AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Kyunghwan Lee of Suwon-si (KR)
Yukio Hayakawa of Suwon-si (KR)
THREE-DIMENSIONAL (3D) FERROELECTRIC RANDOM ACCESS MEMORY (FERAM) AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324234 titled 'THREE-DIMENSIONAL (3D) FERROELECTRIC RANDOM ACCESS MEMORY (FERAM) AND MANUFACTURING METHOD THEREOF
The abstract describes a 3D feram with semiconductor patterns stacked vertically on a substrate, spaced apart in a horizontal direction, with bit lines on one side surface, first electrodes on the other side surfaces, a ferroelectric layer, second electrodes, and word lines.
- Semiconductor patterns are stacked vertically on a substrate.
- Bit lines are present on one side surface of the semiconductor patterns.
- First electrodes are located on the other side surfaces of the semiconductor patterns.
- A ferroelectric layer is present on the first electrodes.
- Second electrodes are located on the ferroelectric layers.
- Word lines are positioned between two adjacent semiconductor patterns.
Potential Applications: - Memory storage devices - High-speed data processing systems - Non-volatile memory applications
Problems Solved: - Increased data storage capacity - Enhanced data processing speed - Improved memory retention
Benefits: - Higher performance in memory applications - Increased efficiency in data processing - Enhanced reliability in memory storage
Commercial Applications: Title: "Advanced 3D Feram Technology for Memory Storage Devices" This technology can be utilized in the development of high-performance memory storage devices for various commercial applications, including data centers, consumer electronics, and industrial automation systems.
Questions about 3D Feram: 1. How does the 3D feram technology improve memory storage capacity? 2. What are the key advantages of using ferroelectric materials in memory devices?
Frequently Updated Research: Stay updated on the latest advancements in 3D feram technology by following research publications in the field of semiconductor devices and memory storage technologies.
Original Abstract Submitted
a 3d feram is provided. the 3d feram includes a semiconductor patterns stacked in a vertical direction on a substrate and spaced apart from each other in a first horizontal direction, bit lines on first side surface of the semiconductor patterns, extending in the first horizontal direction, and spaced apart from each other in the vertical direction, first electrodes on second side surfaces of the semiconductor patterns and spaced apart from each other in both the vertical direction and the first horizontal direction, a ferroelectric layer on the first electrodes, second electrodes on the ferroelectric layers, extending in the first horizontal direction, and spaced apart from each other in the vertical direction, and word lines between two adjacent semiconductor patterns extending in the vertical direction.
