Samsung electronics co., ltd. (20240324233). NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME simplified abstract
Contents
NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Kyeonghoon Park of Suwon-si (KR)
NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324233 titled 'NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
The patent application describes a non-volatile memory device with a unique cell array structure.
- The cell array structure consists of a base insulation layer, a common source line layer, a buffer insulation layer, and a cell stack.
- The cell stack includes multiple gate electrodes with a staircase shape, insulation layers, gate contact plugs, and protection structures.
- The gate contact plugs extend into the cell stack, providing connectivity.
- The protection structures are located between the gate contact plugs and the base insulation layer, enhancing durability and reliability.
Potential Applications: - This technology can be used in various electronic devices requiring non-volatile memory storage. - It can be beneficial in applications where high-density memory storage is essential.
Problems Solved: - Addresses the need for a reliable and efficient non-volatile memory device. - Improves the durability and performance of memory storage solutions.
Benefits: - Enhanced durability and reliability. - Improved performance and efficiency in memory storage. - High-density memory storage capabilities.
Commercial Applications: Title: Innovative Non-Volatile Memory Device for Enhanced Data Storage This technology can be utilized in smartphones, tablets, laptops, and other electronic devices requiring reliable and high-performance memory storage solutions. The market implications include improved data storage capabilities, leading to enhanced user experience and device performance.
Questions about Non-Volatile Memory Device: 1. How does the unique cell array structure of this memory device improve its performance compared to traditional designs? - The unique cell array structure enhances durability, reliability, and efficiency by incorporating features like gate electrodes with a staircase shape and protection structures. 2. What potential industries or sectors could benefit the most from the implementation of this non-volatile memory device? - Industries such as consumer electronics, data storage, and computing could greatly benefit from the enhanced performance and reliability of this memory device.
Original Abstract Submitted
a non-volatile memory device includes a peripheral circuit structure and a cell array structure on the peripheral circuit structure, where the cell array structure includes a base insulation layer, a common source line layer on the base insulation layer, a buffer insulation layer on the common source line layer, and a cell stack on the buffer insulation layer, where the cell stack includes a plurality of gate electrodes and a plurality of insulation layers, where the plurality of gate electrodes have a staircase shape, a plurality of gate contact plugs that extend into the cell stack, and a plurality of protection structures between the plurality of gate contact plugs and the base insulation layer.
