Samsung electronics co., ltd. (20240324206). NONVOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
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NONVOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
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NONVOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324206 titled 'NONVOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
The abstract of this patent application describes a nonvolatile memory device with a unique structure that includes gate electrodes, mold insulating layers, a channel structure, cell contacts, support structures, and a dam structure.
- The memory device has a substrate with distinct memory cell and connection regions.
- A mold structure on the substrate contains gate electrodes and insulating layers stacked alternately.
- A channel structure passes through the mold structure in the memory cell region.
- Cell contacts pass through the mold structure in the connection region, connected to specific gate electrodes.
- Support structures surround the cell contacts planarly in the connection region and extend through the mold structure.
- A dam structure is located between the cell contacts and a specific gate electrode in the connection region.
Potential Applications: - Nonvolatile memory devices in electronic devices - Data storage applications in various industries
Problems Solved: - Enhanced memory cell performance - Improved data retention and reliability
Benefits: - Increased memory device efficiency - Enhanced data storage capabilities
Commercial Applications: Title: Innovative Nonvolatile Memory Device for Enhanced Data Storage This technology can be utilized in smartphones, computers, IoT devices, and other electronic gadgets for improved data storage and performance.
Questions about the technology: 1. How does the unique structure of this nonvolatile memory device contribute to its performance? 2. What sets this memory device apart from traditional nonvolatile memory technologies?
Original Abstract Submitted
a nonvolatile memory device includes a substrate including a memory cell region and a connection region; a mold structure including a plurality of gate electrodes and a plurality of mold insulating layers alternately stacked; a channel structure passing through the mold structure in the memory cell region; a first cell contact passing through the mold structure in the connection region, connected to a first gate electrode and electrically disconnected from a second gate electrode; a plurality of support structures surrounding the first cell contact planarly in the connection region and extending through the mold structure; and a dam structure located between the first cell contact and the second gate electrode in the connection region and apart from the first cell contact with an insulating ring therebetween.
