Samsung electronics co., ltd. (20240324205). THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Shinhwan Kang of Suwon-si (KR)
Jae-Hwang Sim of Suwon-si (KR)
THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324205 titled 'THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING THE SAME
The abstract of a patent application describes a 3D semiconductor memory device with a unique structure involving insulating and conductive patterns, through-plugs, pads, and pad insulating patterns.
- The gate stack structure of the device consists of insulating and conductive patterns stacked alternately.
- A through-plug connects the gate stack structure to a pad, which is in contact with the through-plug.
- The conductive patterns include a selection conductive line that interfaces with the through-plug.
- The through-plug is composed of an extension plug portion and a parallel plug portion.
- The height of the pad is lower than the height of the conductive pattern.
Potential Applications: - This technology can be utilized in the development of advanced semiconductor memory devices. - It can enhance the performance and efficiency of memory storage systems in various electronic devices.
Problems Solved: - Addresses the need for improved semiconductor memory device structures. - Enhances the connectivity and functionality of memory devices.
Benefits: - Increased efficiency and performance of semiconductor memory devices. - Enhanced data storage capabilities in electronic devices.
Commercial Applications: Title: Advanced Semiconductor Memory Device Technology for Enhanced Data Storage This technology can be applied in the production of high-performance memory devices for consumer electronics, data centers, and other applications requiring efficient data storage solutions.
Questions about 3D Semiconductor Memory Device Technology: 1. How does the unique structure of this semiconductor memory device improve its performance compared to traditional memory devices? - The unique structure of this semiconductor memory device enhances connectivity and efficiency, leading to improved performance in data storage applications.
2. What potential impact could this technology have on the semiconductor industry as a whole? - This technology has the potential to revolutionize the semiconductor industry by offering more efficient and advanced memory solutions for various electronic devices.
Original Abstract Submitted
a 3d semiconductor memory device includes a source structure, a gate stack structure disposed on the source structure and comprising insulating patterns and conductive patterns which are alternately stacked, a through-plug, a pad in contact with the through-plug, and a pad insulating pattern under the pad. the conductive patterns include a selection conductive line in contact with the through-plug. the through-plug includes an extension plug portion and a parallel plug portion. a height of the pad is less than a height of the conductive pattern.
