Samsung electronics co., ltd. (20240324193). SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

MinKyung Kim of Suwon-si (KR)

Hakseon Kim of Suwon-si (KR)

Sunggil Kim of Suwon-si (KR)

Jumi Bak of Suwon-si (KR)

Kang-Oh Yun of Suwon-si (KR)

Dongjin Lee of Suwon-si (KR)

Sohyun Lee of Suwon-si (KR)

Junhee Lim of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240324193 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract consists of a substrate with a doped region containing impurities of a first conductivity type at a certain concentration, a gate structure on the substrate, and a first contact that is electrically connected to the doped region. The first contact is composed of a first portion, a second portion on the first portion, and a third portion on the second portion. The first and second portions are made of poly silicon, while the third portion includes at least one metallic material and impurities of the first conductivity type at a higher concentration than the doped region.

• The semiconductor device includes a doped region with impurities of a first conductivity type at a specific concentration.
• The first contact is structured with three portions, each serving a different purpose.
• The first and second portions of the first contact are made of poly silicon.
• The third portion of the first contact includes at least one metallic material and impurities of the first conductivity type at a higher concentration.
• The design of the first contact allows for efficient electrical connection to the doped region.

Potential Applications: - This technology can be applied in the manufacturing of various semiconductor devices. - It can be used in the development of advanced electronic components. - The design can enhance the performance of integrated circuits and transistors.

Problems Solved: - Provides a reliable and efficient electrical connection to the doped region. - Enhances the conductivity and performance of the semiconductor device.

Benefits: - Improved functionality and performance of semiconductor devices. - Enhanced electrical connectivity and conductivity. - Potential for more efficient and advanced electronic components.

Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices, leading to advancements in the semiconductor industry. The improved conductivity and electrical connectivity offered by this innovation can benefit various commercial applications, including consumer electronics, telecommunications, and computing.

Questions about Semiconductor Device Technology: 1. How does the design of the first contact contribute to the overall performance of the semiconductor device? 2. What are the specific advantages of using poly silicon and metallic materials in the construction of the first contact?

Original Abstract Submitted

a semiconductor device includes a substrate, a doped region on the substrate, the doped region including impurities of a first conductivity type at a first concentration, a gate structure on the substrate, and a first contact electrically connected to the doped region, the first contact including a first portion, a second portion on the first portion, and a third portion on the second portion, the first portion and the second portion including poly silicon, the third portion including at least one metallic material, and the second portion including impurities of the first conductivity type at a second concentration higher than the first concentration.