Samsung electronics co., ltd. (20240324188). INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Youngseung Cho of Suwon-si (KR)
Kyounghwan Kim of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324188 titled 'INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
The abstract describes an integrated circuit device with active areas and dummy active areas, along with word line trenches that expose these areas at different vertical levels.
- The integrated circuit device includes active areas and dummy active areas on a substrate.
- Word line trenches cross the active areas and dummy active areas, exposing them at different vertical levels.
- The word line trenches extend in a first horizontal direction in parallel with each other.
- The active side bottom surface of the word line trenches exposes the active areas, while the dummy side bottom surface exposes the dummy active areas.
- The dummy side bottom surface is at a lower vertical level than the active side bottom surface.
Potential Applications: - Memory devices - Semiconductor manufacturing - Integrated circuit design
Problems Solved: - Efficient use of space on the substrate - Improved performance of the integrated circuit device
Benefits: - Enhanced functionality - Optimal layout design - Increased productivity in semiconductor manufacturing
Commercial Applications: Title: Advanced Memory Device Design for Enhanced Performance This technology can be used in the production of memory devices for various electronic applications, leading to faster and more efficient devices in the market.
Prior Art: Researchers can explore patents related to integrated circuit design and semiconductor manufacturing to find prior art relevant to this technology.
Frequently Updated Research: Researchers in the field of semiconductor technology are constantly exploring new ways to improve integrated circuit design and manufacturing processes. Stay updated on the latest advancements in this area to enhance the performance of memory devices.
Questions about the technology: 1. How does the vertical level difference between the active and dummy side bottom surfaces impact the performance of the integrated circuit device? 2. What are the specific challenges faced in the manufacturing process of such integrated circuit devices?
Original Abstract Submitted
an integrated circuit device includes a substrate including a plurality of active areas and a plurality of dummy active areas, and defines a plurality of word line trenches that cross the plurality of active areas and the plurality of dummy active area, extend in a first horizontal direction in parallel with each other and have an active side bottom surface exposing the plurality of active areas and a dummy side bottom surface exposing the plurality of dummy active areas. the dummy side bottom surface is at a lower vertical level than the active side bottom surface.
