Samsung electronics co., ltd. (20240324177). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
YOUNGGEUN Song of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324177 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a substrate, a bit line, a first mold layer, a channel layer, one or more word lines, and a gate insulating layer.
- The bit line extends in a first horizontal direction on the substrate.
- The first mold layer defines a mold opening that exposes a portion of the bit line and extends in a second horizontal direction.
- The channel layer is on the bit line and includes a first oxide semiconductor layer, a second oxide semiconductor layer, and an auxiliary channel layer.
- The word lines are on the sidewalls of the channel layer and extend in the second horizontal direction.
- The gate insulating layer is between the word line and the channel layer.
Potential Applications: - Memory devices - Logic circuits - Microprocessors
Problems Solved: - Improved performance and efficiency of semiconductor devices - Enhanced integration of components - Better control of electrical signals
Benefits: - Higher speed and reliability - Reduced power consumption - Increased functionality in smaller devices
Commercial Applications: Title: Advanced Semiconductor Devices for Next-Generation Electronics This technology can be used in various electronic devices such as smartphones, tablets, laptops, and IoT devices. It can also be applied in industries like telecommunications, automotive, and healthcare.
Questions about the technology: 1. How does the configuration of the channel layer contribute to the performance of the semiconductor device? 2. What are the advantages of having word lines on the sidewalls of the channel layer?
Frequently Updated Research: Researchers are continually exploring new materials and structures to further enhance the capabilities of semiconductor devices. Stay updated on the latest advancements in oxide semiconductor technology for potential future applications.
Original Abstract Submitted
a semiconductor device includes a substrate, a bit line that extends in a first horizontal direction on the substrate, a first mold layer on the bit line, wherein the first mold layer defines a mold opening that exposes a portion of an upper surface of the bit line and extends in a second horizontal direction that intersects the first horizontal direction, a channel layer on the bit line, one or more word lines on sidewalls of the channel layer and that extend in the second horizontal direction, and a gate insulating layer between the word line and the channel layer, where the channel layer includes a first oxide semiconductor layer, a second oxide semiconductor layer, and an auxiliary channel layer between the first oxide semiconductor layer and the second oxide semiconductor layer.
