Samsung electronics co., ltd. (20240324172). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Donghoon Kwon of Suwon-si (KR)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324172 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
The method of manufacturing a semiconductor device involves preparing a substrate with active regions and a peripheral active region separated by an isolation layer.
- Forming a word line in a trench that crosses the active regions.
- Creating multiple bit line structures, each containing a bit line on the active regions.
- Generating gate line structures with gate lines on the peripheral active region.
- Establishing buried contacts between the bit line structures connected to the active regions.
- Introducing an inter-gate insulating layer with impurity-containing oxide between the gate line structures.
Potential Applications: - Semiconductor manufacturing industry - Electronics manufacturing for various devices - Research and development in semiconductor technology
Problems Solved: - Efficient organization of components on a semiconductor device - Improved connectivity between different structures - Enhanced performance and reliability of the device
Benefits: - Higher efficiency in semiconductor manufacturing - Improved functionality and performance of electronic devices - Enhanced reliability and longevity of semiconductor devices
Commercial Applications: Title: Advanced Semiconductor Device Manufacturing Method This technology can be used in the production of various electronic devices, such as smartphones, computers, and other consumer electronics. It can also benefit industries involved in semiconductor manufacturing and research.
Questions about Semiconductor Device Manufacturing: 1. How does the method of forming buried contacts improve the connectivity of the semiconductor device?
The buried contacts enhance the connection between different structures on the device, improving overall performance and reliability.
2. What is the significance of the inter-gate insulating layer in semiconductor manufacturing?
The inter-gate insulating layer, containing impurity-containing oxide, helps in isolating and protecting the gate line structures, contributing to the device's functionality and longevity.
Original Abstract Submitted
a method of manufacturing a semiconductor device includes preparing a substrate including a plurality of active regions and a peripheral active region defined by an isolation layer, forming a word line in a word line trench that crosses the plurality of active regions, forming a plurality of bit line structures, each of the plurality of bit line structures including a bit line on the plurality of active regions, forming a plurality of gate line structures, each of the plurality of gate line structures including a gate line on the peripheral active region, forming a plurality of buried contacts between the plurality of bit line structures, the plurality of buried contacts being connected to the plurality of active regions, and forming an inter-gate insulating layer between the plurality of gate line structures, the inter-gate insulating layer including an oxide having impurities.
