Samsung electronics co., ltd. (20240321980). INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Heonjong Shin of Suwon-si (KR)
Seunghyun Hwang of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321980 titled 'INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
The integrated circuit device described in the patent application includes a substrate with fin-type active regions protruding vertically from the main surface, gate lines crossing the fin-type active regions, source/drain regions on the fin-type active regions, an inter-gate insulation layer covering the source/drain regions, active contacts in contact with the source/drain regions, and a buried insulation block between adjacent source/drain regions.
- Fin-type active regions protrude vertically from the main surface of the substrate.
- Gate lines extend parallel to each other in a horizontal direction perpendicular to the fin-type active regions.
- Source/drain regions are located on the fin-type active regions between the gate lines.
- An inter-gate insulation layer covers the source/drain regions between the gate lines.
- Active contacts are in contact with the source/drain regions.
- A buried insulation block is present between adjacent source/drain regions, penetrating through the inter-gate insulation layer.
Potential Applications: - This technology can be used in the development of advanced integrated circuits for various electronic devices. - It can enhance the performance and efficiency of semiconductor devices.
Problems Solved: - Improved integration and performance of semiconductor devices. - Enhanced reliability and functionality of integrated circuits.
Benefits: - Increased efficiency and speed of electronic devices. - Enhanced reliability and durability of integrated circuits.
Commercial Applications: Title: Advanced Integrated Circuit Technology for Enhanced Performance This technology can be applied in the manufacturing of high-performance electronic devices such as smartphones, tablets, and computers. It can also be utilized in the automotive industry for advanced driver assistance systems and in the aerospace sector for avionics applications.
Questions about the Technology: 1. How does the presence of the buried insulation block improve the performance of the integrated circuit device? The buried insulation block helps in reducing interference between adjacent source/drain regions, leading to improved overall performance and reliability of the device.
2. What are the key advantages of using fin-type active regions in semiconductor devices? Fin-type active regions allow for better control of the flow of current in the device, resulting in improved efficiency and performance.
Original Abstract Submitted
an integrated circuit device includes a substrate having a main surface and fin-type active regions protruding in a vertical direction from the main surface and extending lengthwise in a first horizontal direction, gate lines extending parallel to one another in a second horizontal direction perpendicular to the first horizontal direction and crossing the fin-type active regions, source/drain regions on the fin-type active regions between the gate lines, an inter-gate insulation layer covering the source/drain regions between the gate lines, active contacts on and in contact with the source/drain regions, and a buried insulation block between adjacent ones of the source/drain regions in the second horizontal direction, the buried insulation block penetrating through at least a portion of the inter-gate insulation layer and having a top surface in contact with a first active contact of the active contacts.
