Samsung electronics co., ltd. (20240321941). INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract

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INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Intak Jeon of Suwon-si (KR)

Beomjong Kim of Suwon-si (KR)

INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321941 titled 'INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE

The abstract describes an integrated circuit semiconductor device with lower electrodes on a substrate and a support structure supporting the lower electrodes. The support structure includes three different support structures for different portions of the lower electrodes.

  • Lower electrodes are supported by a first, second, and third support structure.
  • Each support structure includes a support pattern with additional holes for the lower electrodes to pass through.
  • The first support structure supports lower portions, the second supports middle portions, and the third supports node portions of the lower electrodes.
  • The support patterns extend horizontally and surround the lower electrodes.

Potential Applications: - This technology can be used in the manufacturing of integrated circuit semiconductor devices. - It can improve the stability and performance of such devices.

Problems Solved: - Provides structural support for lower electrodes in integrated circuits. - Helps prevent damage or misalignment of the electrodes during manufacturing or operation.

Benefits: - Enhanced reliability and durability of integrated circuit semiconductor devices. - Improved overall performance and longevity of the devices.

Commercial Applications: Title: Structural Support Technology for Integrated Circuits This technology can be utilized in the semiconductor industry for the production of more reliable and efficient integrated circuit devices. It can lead to advancements in various electronic devices, from smartphones to computers, by ensuring stable and durable electrode structures.

Prior Art: Further research can be conducted in the field of semiconductor device manufacturing processes to explore similar technologies or methods used for supporting electrodes in integrated circuits.

Frequently Updated Research: Researchers in the semiconductor industry may be exploring new materials or designs for support structures in integrated circuit devices. Stay updated on industry publications and conferences for the latest advancements in this area.

Questions about Structural Support Technology for Integrated Circuits: 1. How does this technology improve the reliability of integrated circuit devices? - This technology enhances the stability and structural integrity of lower electrodes in integrated circuits, reducing the risk of damage or misalignment during manufacturing or operation.

2. What are the key differences between the three support structures mentioned in the abstract? - The first support structure supports lower portions of the electrodes, the second supports middle portions, and the third supports node portions, providing comprehensive structural support for the electrodes.


Original Abstract Submitted

an integrated circuit semiconductor device includes lower electrodes on a substrate, and a support structure supporting the lower electrodes around the lower electrodes. the support structure includes a first support structure supporting lower portions of the lower electrodes, a second support structure apart from the first support structure in a vertical direction perpendicular to the substrate and supporting middle portions of the lower electrodes, and a third support structure apart from the second support structure in the vertical direction perpendicular to the substrate and supporting node portions of the lower electrodes. each of the first support structure, the second support structure, and the third support structure includes a support pattern and additional holes formed through the support pattern. the support pattern extends in a horizontal direction parallel to the substrate and surrounds the lower electrodes. the support pattern includes holes through which the lower electrodes pass.