Samsung electronics co., ltd. (20240321938). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Changhwa Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321938 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a lower electrode on a substrate, a dielectric layer covering the lower electrode, and an upper electrode spaced apart from the lower electrode. The dielectric layer is positioned between the upper and lower electrodes, with a thickness not exceeding 6 nm and a grain size ranging from 3 nm to 30 nm.
- Lower electrode on a substrate
- Dielectric layer between lower and upper electrodes
- Upper electrode spaced apart from lower electrode
- Dielectric layer thickness ≤ 6 nm
- Dielectric layer grain size between 3 nm and 30 nm
Potential Applications: - Semiconductor manufacturing - Electronics industry - Nanotechnology research
Problems Solved: - Enhancing semiconductor device performance - Improving miniaturization of electronic components
Benefits: - Increased efficiency in electronic devices - Enhanced functionality in semiconductor technology
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Electronics This technology can be utilized in the production of high-performance electronic devices, leading to improved consumer electronics, advanced computing systems, and cutting-edge communication devices. The market implications include increased demand for smaller, more efficient electronic components in various industries.
Prior Art: Readers can explore prior research on semiconductor devices, dielectric materials, and nanoscale electronics to gain a deeper understanding of the technology's development and applications.
Frequently Updated Research: Stay informed about the latest advancements in semiconductor technology, nanoscale materials, and electronic device manufacturing to keep up with the evolving landscape of this field.
Questions about Semiconductor Devices: 1. What are the potential environmental impacts of manufacturing semiconductor devices with such advanced materials?
- Answer: The environmental impact of semiconductor manufacturing is a complex issue that involves energy consumption, waste generation, and chemical usage. Research is ongoing to develop more sustainable practices in the electronics industry.
2. How do the properties of the dielectric layer in this semiconductor device contribute to its overall performance?
- Answer: The dielectric layer's thickness and grain size play a crucial role in determining the device's electrical characteristics, insulation properties, and overall efficiency.
Original Abstract Submitted
a semiconductor device includes a lower electrode disposed on a substrate; a dielectric layer covering the lower electrode; and an upper electrode spaced apart from the lower electrode. the dielectric layer is disposed between the upper electrode and the lower electrode. a thickness of the dielectric layer is less than or equal to 6 nm, and a grain size in the dielectric layer is between 3 nm and 30 nm.
