Samsung electronics co., ltd. (20240321926). IMAGE SENSORS simplified abstract
Contents
IMAGE SENSORS
Organization Name
Inventor(s)
Masato Fujita of Suwon-si (KR)
IMAGE SENSORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321926 titled 'IMAGE SENSORS
The abstract describes an image sensor with a first stack containing a semiconductor substrate with a photoelectric conversion region and a floating diffusion region, and a second stack with a transmission gate penetrating through the substrate.
- The image sensor includes a first stack with a semiconductor substrate housing a photoelectric conversion region and a floating diffusion region for storing charges.
- A second stack is present with a semiconductor substrate and a transmission gate that extends into the first stack.
- An insulation layer separates the first stack from the second stack.
Potential Applications: - Digital cameras - Smartphones - Surveillance systems
Problems Solved: - Improved image quality - Enhanced low-light performance
Benefits: - Higher sensitivity - Reduced noise - Increased dynamic range
Commercial Applications: Title: Advanced Image Sensors for Enhanced Photography This technology can be utilized in various commercial applications such as digital cameras, smartphones, and surveillance systems to improve image quality and low-light performance, providing a competitive edge in the market.
Questions about Image Sensors: 1. How do image sensors impact the quality of photographs?
- Image sensors play a crucial role in capturing light and converting it into digital signals, directly affecting the quality of photographs by determining factors like sensitivity and dynamic range.
2. What are the key differences between traditional and advanced image sensors?
- Advanced image sensors incorporate innovative features like floating diffusion regions and transmission gates to enhance performance, sensitivity, and noise reduction compared to traditional sensors.
Original Abstract Submitted
an image sensor includes: a first stack including: a first semiconductor substrate including a first surface and a second surface opposite to the first surface, a photoelectric conversion region in the first semiconductor substrate, and a floating diffusion region in the first semiconductor substrate, the floating diffusion region being configured to store charges transferred from the photoelectric conversion region; a second stack including: a second semiconductor substrate including a first surface and a second surface opposite the first surface, and a transmission gate penetrating through the second semiconductor substrate and extending into the first stack; and an insulation layer between the first stack and the second stack.
