Samsung electronics co., ltd. (20240321888). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321888 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the patent application includes insulating patterns, a device isolation layer on the side surfaces of the insulating patterns, gate structures, source/drain regions on the insulating patterns, a via structure between the gate structures and the source/drain regions, and contact structures connected to the source/drain regions and the via structure. The source/drain regions consist of first and second source/drain regions, with the via structure extending from the same level as the lower surfaces of the first source/drain regions to the same level as the upper surfaces of the second source/drain regions. The via structure features a portion where the width increases and then decreases or decreases and then increases. The contact structures include a first contact structure contacting the first source/drain regions and a second contact structure contacting the second source/drain regions.
- Insulating patterns
- Device isolation layer
- Gate structures
- Source/drain regions
- Via structure
- Contact structures
- First and second source/drain regions
- Width variation in the via structure
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronic devices
Problems Solved: - Enhanced connectivity between components - Improved performance of semiconductor devices
Benefits: - Increased efficiency in semiconductor devices - Enhanced reliability of connections - Potential for smaller and more powerful electronic devices
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Connectivity This technology can be applied in the production of high-performance electronic devices, leading to faster and more reliable products. The market implications include improved consumer electronics, telecommunications equipment, and industrial machinery.
Questions about the technology: 1. How does the width variation in the via structure contribute to the performance of the semiconductor device? 2. What are the specific advantages of having first and second source/drain regions in the device design?
Original Abstract Submitted
a semiconductor device may include: insulating patterns; a device isolation layer on side surfaces of the insulating patterns; gate structures; source/drain regions on the insulating patterns; a via structure between the gate structures and between the source/drain regions; and contact structures connected to the source/drain regions and the via structure, wherein the source/drain regions may include first source/drain regions and second source/drain, wherein the via structure may extend from the same level as lower surfaces of the first source/drain regions to the same level as upper surfaces of the second source/drain regions, and the via structure may include a portion in which a width of the via structure increases and then decreases or decreases and then increases, wherein the contact structures may include a first contact structure contacting the first source/drain regions and a second contact structure contacting the second source/drain regions.
