Samsung electronics co., ltd. (20240321884). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Myunggil Kang of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321884 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
The semiconductor device described in the abstract includes a substrate, a fin-type active region protruding on the substrate, a channel region on the fin-type active region with active patterns extending in a first horizontal direction, a semiconductor material layer, a gate line covering the channel region, and a pair of source/drain regions on both sides of the gate line.
- The semiconductor material layer has a different work function from the active patterns.
- The semiconductor material layer surrounds portions of the gate line between the active patterns.
- The gate line is separated from the pair of source/drain regions by the semiconductor material layer.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It can improve the performance and efficiency of electronic devices.
Problems Solved: - Enhances the functionality of semiconductor devices. - Improves the integration of different components in electronic devices.
Benefits: - Increased efficiency and performance of electronic devices. - Enhanced functionality and reliability of semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices, leading to improved consumer electronics, telecommunications equipment, and computing devices. The market implications include increased demand for more efficient and reliable semiconductor components.
Prior Art: Readers can explore prior patents related to semiconductor device manufacturing processes, gate line configurations, and source/drain region designs to gain a deeper understanding of the technological advancements in this field.
Frequently Updated Research: Researchers are constantly working on improving semiconductor device technologies, exploring new materials, and optimizing device structures for better performance and functionality.
Questions about Semiconductor Device Technology: 1. What are the key differences between the semiconductor material layer and the active patterns in this technology? 2. How does the separation of the gate line from the source/drain regions contribute to the overall performance of the semiconductor device?
Original Abstract Submitted
provided is a semiconductor device including a substrate, a fin-type active region protruding on the substrate, a channel region on the fin-type active region and including a plurality of active patterns extending in a first horizontal direction and a semiconductor material layer, a gate line extending in a second horizontal direction that is perpendicular to the first horizontal direction and covering the channel region on the fin-type active region, and a pair of source/drain regions at both sides of the gate line on the fin-type active region, wherein a work function of the semiconductor material layer is different from a work function of the plurality of active patterns, the semiconductor material layer surrounds portions of the gate line between the plurality of active patterns, and the gate line is separated from the pair of source/drain regions with the semiconductor material layer therebetween.
