Samsung electronics co., ltd. (20240321875). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Donghoon Hwang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321875 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a substrate with an active region protruding from the upper surface, nanosheet stacks, gate lines, and insulating patterns.
- The active region extends in a first horizontal direction, with nanosheet stacks and gate lines intersecting in a second horizontal direction.
- The gate lines surround the nanosheet stacks, and insulating patterns are present between adjacent nanosheet stacks in the first horizontal direction.
- The insulating patterns extend vertically and are in contact with the nanosheet stacks.
Potential Applications: - This technology can be used in the development of advanced semiconductor devices for various electronic applications. - It may enhance the performance and efficiency of integrated circuits and other electronic systems.
Problems Solved: - Improved integration and functionality of semiconductor devices. - Enhanced control and manipulation of electronic signals.
Benefits: - Increased speed and efficiency of electronic devices. - Enhanced reliability and performance of semiconductor components.
Commercial Applications: - This technology could be utilized in the production of high-performance computers, smartphones, and other electronic devices. - It may have applications in industries such as telecommunications, automotive, and aerospace.
Questions about the technology: 1. How does this semiconductor device improve upon existing technologies in the industry? 2. What are the potential challenges in implementing this technology on a larger scale?
Frequently Updated Research: - Stay updated on advancements in semiconductor technology and related fields to understand the latest developments and potential applications of this innovation.
Original Abstract Submitted
a semiconductor device includes a substrate, an active region protruding from an upper surface of the substrate and extending in a first horizontal direction, a plurality of nanosheet stacks on the active region, a plurality of gate lines extending in a second horizontal direction intersecting the first horizontal direction, on the active region, and surrounding the plurality of nanosheet stacks, and a first insulating pattern between two nanosheet stacks adjacent in the first horizontal direction among the plurality of nanosheet stacks, on the active region, and extending in a vertical direction perpendicular to the first horizontal direction and the second horizontal direction, wherein the first insulating pattern is in contact with the plurality of nanosheet stacks.
