Samsung electronics co., ltd. (20240321774). SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR PACKAGE INCLUDING SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR PACKAGE INCLUDING SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Kitae Park of Suwon-si (KR)

Chiwan Song of Suwon-si (KR)

Seonkyu Kim of Suwon-si (KR)

Hyunna Bae of Suwon-si (KR)

Seungmin Baek of Suwon-si (KR)

Yongjae Song of Suwon-si (KR)

Joonseok Oh of Suwon-si (KR)

Jaewook Jung of Suwon-si (KR)

Seokil Hong of Suwon-si (KR)

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR PACKAGE INCLUDING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321774 titled 'SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR PACKAGE INCLUDING SEMICONDUCTOR DEVICE

The present disclosure pertains to semiconductor devices and semiconductor packages. One example semiconductor device includes a crystalline silicon layer, an amorphous silicon layer on the crystalline silicon layer, and a dielectric layer on the amorphous silicon layer. The dielectric layer contains silicon oxynitride and has compressive stress.

• Crystalline silicon layer
• Amorphous silicon layer
• Dielectric layer with silicon oxynitride
• Compressive stress in the dielectric layer
• Semiconductor device structure

• • Potential Applications:**

This technology can be used in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.

• • Problems Solved:**

This technology addresses the need for improved performance and reliability in semiconductor devices by providing a unique structure with specific material properties.

• • Benefits:**

- Enhanced performance of semiconductor devices - Increased reliability and durability - Improved integration of different layers in the device

• • Commercial Applications:**

This technology has significant commercial potential in the semiconductor industry, where high-performance devices are in demand for various applications.

• • Questions about Semiconductor Devices:**

1. How does the presence of compressive stress in the dielectric layer impact the overall performance of the semiconductor device? 2. What are the specific advantages of using silicon oxynitride in the dielectric layer compared to other materials?

• • Frequently Updated Research:**

Researchers are continually exploring new materials and structures to further enhance the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in this field for potential future applications.

Original Abstract Submitted

the present disclosure relates to semiconductor devices and semiconductor packages. one example semiconductor device includes a crystalline silicon layer, an amorphous silicon layer on the crystalline silicon layer and extending along a first surface of the crystalline silicon layer, and a dielectric layer on the amorphous silicon layer and extending along a surface of the amorphous silicon layer. the dielectric layer includes silicon oxynitride and has compressive stress.