Samsung electronics co., ltd. (20240321726). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Gyeongseop Kim of Suwon-si (KR)
Jaeyoung Park of Suwon-si (KR)
Jeonwon Jeong of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321726 titled 'INTEGRATED CIRCUIT DEVICE
The abstract describes an integrated circuit device with multiple conductive patterns, insulation structures, and a vertical extension structure.
- The device includes a first conductive pattern on a substrate, a second conductive pattern surrounding part of the first pattern, and an upper insulation structure.
- An upper conductive pattern penetrates through the insulation structure, with a main plug portion overlapping the first and second patterns vertically.
- A vertical extension extends from the main plug portion towards the substrate, covering the upper sidewall of the first pattern and overlapping the second pattern.
- A dummy contact is formed on a single diffusion break region on the substrate.
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit design
Problems Solved: - Improved integration of conductive patterns - Enhanced vertical connectivity in circuits - Efficient use of substrate space
Benefits: - Higher circuit density - Enhanced performance - Cost-effective manufacturing
Commercial Applications: Title: Advanced Integrated Circuit Devices for Enhanced Performance This technology can be used in various electronic devices, such as smartphones, computers, and IoT devices, to improve their performance and functionality.
Questions about the technology: 1. How does the vertical extension structure improve circuit connectivity? 2. What are the advantages of using a dummy contact in the device design?
Frequently Updated Research: Researchers are continually exploring new materials and manufacturing techniques to further enhance the performance and efficiency of integrated circuit devices. Stay updated on the latest advancements in semiconductor technology for potential future applications.
Original Abstract Submitted
an integrated circuit device includes a first conductive pattern disposed on a substrate, a second conductive pattern surrounding a portion of the first conductive pattern and covering a lower portion of a sidewall of the first conductive pattern, an upper insulation structure on the first conductive pattern and the second conductive pattern, and an upper conductive pattern penetrating through the upper insulation structure and extending in a vertical direction, wherein the upper conductive pattern includes a main plug portion overlapping the first conductive pattern and the second conductive pattern in the vertical direction, and a vertical extension extending from a portion of the main plug portion toward the substrate, covering an upper of the upper sidewall of the first conductive pattern, and overlapping the second conductive pattern in the vertical direction, and a dummy contact is formed on a single diffusion break region on the substrate.
