Samsung electronics co., ltd. (20240321333). MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WITHOUT EXTERNAL MAGNETIC FIELD AND MEMORY DEVICE INCLUDING THE SAME simplified abstract
MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WITHOUT EXTERNAL MAGNETIC FIELD AND MEMORY DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Jeongchun Ryu of Suwon-si (KR)
Kwangseok Kim of Suwon-si (KR)
MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WITHOUT EXTERNAL MAGNETIC FIELD AND MEMORY DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321333 titled 'MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WITHOUT EXTERNAL MAGNETIC FIELD AND MEMORY DEVICE INCLUDING THE SAME
The magnetic tunneling junction device described in the patent application consists of several layers including a synthetic antiferromagnet, a separation metal layer, a free layer, an oxide layer, and a pinned layer.
- The synthetic antiferromagnet is made up of a first ferromagnetic layer, a non-magnetic metal layer, and a second ferromagnetic layer with opposite magnetization directions in an in-plane direction.
- The free layer sits on the separation metal layer and has a variable magnetization direction.
- An oxide layer is placed on top of the free layer.
- The pinned layer, with a pinned magnetization direction, is then placed on the oxide layer.
Key Features and Innovation:
- Utilization of a synthetic antiferromagnet structure to enhance magnetic tunneling junction device performance.
- Incorporation of layers with specific magnetization directions to control the flow of current in the device.
Potential Applications:
- Data storage devices
- Magnetic sensors
- Spintronics applications
Problems Solved:
- Improved control over magnetization directions in the device.
- Enhanced performance and reliability of magnetic tunneling junction devices.
Benefits:
- Increased data storage capacity
- Higher sensitivity in magnetic sensors
- Improved efficiency in spintronics applications
Commercial Applications:
- Magnetic memory devices for consumer electronics
- Magnetic field sensors for industrial applications
- Spin-based logic devices for computing
Questions about Magnetic Tunneling Junction Devices: 1. How does the synthetic antiferromagnet structure contribute to the performance of the device? 2. What are the specific advantages of having opposite magnetization directions in the first and second ferromagnetic layers?
Frequently Updated Research: Ongoing research focuses on optimizing the design and materials used in magnetic tunneling junction devices to further improve their performance and efficiency.
Original Abstract Submitted
a magnetic tunneling junction device includes a synthetic antiferromagnet, a separation metal layer disposed on the synthetic antiferromagnet, a free layer disposed on the separation metal layer and having a variable magnetization direction, an oxide layer disposed on the free layer, and a pinned layer disposed on the oxide layer and having a pinned magnetization direction. the synthetic antiferromagnet may include a first ferromagnetic layer, a non-magnetic metal layer disposed on the first ferromagnetic layer, and a second ferromagnetic layer disposed on the non-magnetic metal layer. magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer may be opposite to each other in an in-plane direction and aligned to be inclined with respect to a direction of a current applied to the synthetic antiferromagnet.
