Samsung electronics co., ltd. (20240321324). MEMORY DEVICE INCLUDING VOLTAGE AND TEMPERATURE SENSING CIRCUIT AND METHOD FOR MANAGING OPERATION THEREOF simplified abstract
MEMORY DEVICE INCLUDING VOLTAGE AND TEMPERATURE SENSING CIRCUIT AND METHOD FOR MANAGING OPERATION THEREOF
Organization Name
Inventor(s)
Poornima Venkatasubramanian of Bengaluru (IN)
Gopi Sunanth Kumar Gogineni of Bengaluru (IN)
Lava Kumar Pulluru of Bengaluru (IN)
Karthikeyan Somashekara of Bengaluru (IN)
Manish Chandra Joshi of Bengaluru (IN)
MEMORY DEVICE INCLUDING VOLTAGE AND TEMPERATURE SENSING CIRCUIT AND METHOD FOR MANAGING OPERATION THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321324 titled 'MEMORY DEVICE INCLUDING VOLTAGE AND TEMPERATURE SENSING CIRCUIT AND METHOD FOR MANAGING OPERATION THEREOF
The memory device described in the patent application includes a voltage and temperature sensing circuit that generates a pull down signal based on the voltage and temperature at the memory device. The device also features primary pull down paths with secondary pull down paths, provided separately at a dummy read bit line (DRBL) and a dummy global read bit line (DGRBL).
- The voltage and temperature sensing circuit controls the secondary pull down paths based on the voltage of the pull down signal.
- It varies the discharge time of the dummy bit-lines based on the voltage of the pull down signal.
- It generates an early reset signal at high temperature or high voltage conditions based on the voltage of the pull down signal.
- Key Features and Innovation:**
- Voltage and temperature sensing circuit for pull down signal generation.
- Primary and secondary pull down paths for improved performance.
- Control of secondary paths based on voltage.
- Variation of discharge time for dummy bit-lines.
- Early reset signal generation based on voltage.
- Potential Applications:**
This technology can be applied in various memory devices to enhance performance and reliability.
- Problems Solved:**
- Improved control over pull down paths.
- Enhanced performance under high temperature and voltage conditions.
- Efficient discharge time management for dummy bit-lines.
- Benefits:**
- Increased reliability of memory devices.
- Better performance in challenging conditions.
- Enhanced overall functionality.
- Commercial Applications:**
This technology can be utilized in the development of advanced memory devices for various industries, including electronics and telecommunications.
- Questions about Memory Device Technology:**
1. How does the voltage and temperature sensing circuit impact the performance of the memory device? 2. What are the specific advantages of having primary and secondary pull down paths in the memory device?
Original Abstract Submitted
a memory device, includes a voltage and temperature sensing circuit configured to generate a pull down (pd) signal that varies based on upon at least one of a voltage and temperature at the memory device; and primary pull down paths provided with secondary pull down paths, wherein the primary pull down paths are provided separately at a dummy read bit line (drbl) and a dummy global read bit line (dgrbl), wherein the secondary pull down paths are provided separately for the drbl and the dgrbl parallel to the respective primary pull down paths. the voltage and temperature sensing circuit is configured to perform at least one of: controlling at least one of the secondary pull down paths based on a voltage of the pd signal; varying a discharge time of at least one of the dummy bit-lines based on the voltage of the pd signal; and generating an early reset signal at one of a high temperature condition and a high voltage condition based on the voltage of the pd signal.
