Samsung electronics co., ltd. (20240318307). SUBSTRATE PROCESSING DEVICE simplified abstract

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SUBSTRATE PROCESSING DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Byunghwan Kong of Suwon-si (KR)

Heesun Song of Suwon-si (KR)

Seongwan Kim of Suwon-si (KR)

Heeyeon Kim of Suwon-si (KR)

Seongho Park of Suwon-si (KR)

Hyunho Choi of Suwon-si (KR)

SUBSTRATE PROCESSING DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240318307 titled 'SUBSTRATE PROCESSING DEVICE

The patent application describes a substrate processing device with a first tube for loading substrates, a second tube enclosing the first tube, and a process gas supply line for injecting gas into the first tube.

  • The first tube has exhaust holes in the sidewall, including a main exhaust hole and a multi-exhaust hole region with smaller auxiliary exhaust holes.
  • The height of the auxiliary exhaust holes is less than the main exhaust hole, creating a specific exhaust pattern for efficient processing.

Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Solar cell production

Problems Solved: - Improved gas distribution and exhaust efficiency - Enhanced substrate processing uniformity

Benefits: - Higher quality and consistency in substrate processing - Increased productivity and yield in manufacturing processes

Commercial Applications: - Equipment manufacturers for semiconductor industry - Research institutions for thin film deposition studies

Questions about the technology: 1. How does the exhaust hole design impact substrate processing efficiency? 2. What are the specific benefits of the multi-exhaust hole region in the first tube design?

Frequently Updated Research: - Ongoing studies on optimizing exhaust patterns for various substrate materials and sizes.


Original Abstract Submitted

provided is a substrate processing device including a first tube configured to load a substrate in an interior space thereof, a second tube configured to include the first tube therein, and a process gas supply line configured to inject process gas to the interior space of the first tube, wherein the first tube has a plurality of exhaust holes penetrating a sidewall of the first tube, the plurality of exhaust holes include a main exhaust hole and a multi-exhaust hole region disposed in a line in the vertical direction, the multi-exhaust hole region includes a plurality of auxiliary exhaust holes, and the height of each of the plurality of auxiliary exhaust holes is less than the height of the main exhaust hole.