Samsung electronics co., ltd. (20240318078). ETCHING COMPOSITION FOR TITANIUM-CONTAINING LAYER, ETCHING METHOD OF ETCHING TITANIUM-CONTAINING LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE ETCHING COMPOSITION simplified abstract

ETCHING COMPOSITION FOR TITANIUM-CONTAINING LAYER, ETCHING METHOD OF ETCHING TITANIUM-CONTAINING LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE ETCHING COMPOSITION

Organization Name

samsung electronics co., ltd.

Inventor(s)

Byungjoon Kang of Suwon-si (KR)

Sungmin Kim of Suwon-si (KR)

Minjae Sung of Hwaseong-si (KR)

Gayoung Song of Hwaseong-si (KR)

Jungmin Oh of Hwaseong-si (KR)

Hyosan Lee of Hwaseong-si (KR)

Byoungki Choi of Suwon-si (KR)

Cheol Ham of Suwon-si (KR)

Kyuyoung Hwang of Suwon-si (KR)

ETCHING COMPOSITION FOR TITANIUM-CONTAINING LAYER, ETCHING METHOD OF ETCHING TITANIUM-CONTAINING LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE ETCHING COMPOSITION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240318078 titled 'ETCHING COMPOSITION FOR TITANIUM-CONTAINING LAYER, ETCHING METHOD OF ETCHING TITANIUM-CONTAINING LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE ETCHING COMPOSITION

The abstract describes an etching composition for a titanium-containing layer, consisting of an oxidant, an inorganic acid, and a selective etching inhibitor. The inorganic acid can be phosphorus-based, chlorine-based, or fluorine-based, or a combination of these. The selective etching inhibitor is a polymer with a nitrogen-containing repeating unit.

• The etching composition is designed for use on titanium-containing layers.
• It includes an oxidant, inorganic acid, and a selective etching inhibitor.
• The inorganic acid can be phosphorus-based, chlorine-based, or fluorine-based.
• The selective etching inhibitor is a polymer with a nitrogen-containing repeating unit.
• This composition allows for selective etching of titanium-containing layers while inhibiting unwanted etching.

Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Surface treatment of titanium-based materials

Problems Solved: - Selective etching of titanium-containing layers - Control of etching process in semiconductor manufacturing

Benefits: - Improved precision in etching processes - Enhanced control over material removal - Increased efficiency in semiconductor manufacturing

Commercial Applications: Title: Advanced Etching Composition for Titanium Layers This technology can be utilized in semiconductor fabrication facilities, microelectronics manufacturing plants, and companies specializing in surface treatment of titanium-based materials. The market implications include improved product quality, increased production efficiency, and cost savings in manufacturing processes.

Questions about the technology: 1. How does the etching composition improve the precision of etching processes? 2. What are the specific advantages of using a polymer-based selective etching inhibitor in this composition?

Original Abstract Submitted

an etching composition for a titanium-containing layer may include an oxidant, an inorganic acid, and a selective etching inhibitor. the inorganic acid may include phosphorus-based inorganic acid, chlorine-based inorganic acid, or fluorine-based inorganic acid, or any combination thereof. the selective etching inhibitor may include a polymer having a nitrogen-containing repeating unit.