Samsung electronics co., ltd. (20240318039). CHEMICAL MECHANICAL POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract
CHEMICAL MECHANICAL POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Organization Name
Inventor(s)
Sanghyun Park of Suwon-si (KR)
CHEMICAL MECHANICAL POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240318039 titled 'CHEMICAL MECHANICAL POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Simplified Explanation: The chemical mechanical polishing slurry described in the patent application is used for polishing a metal layer and contains deionized water, abrasive particles, and an aqueous solution with a temperature-sensitive oxidizing agent to control the etch rate and removal rate of the metal layer during polishing at temperatures between 10°C to 75°C.
- Contains deionized water, abrasive particles, and a temperature-sensitive oxidizing agent
- Controls static etch rate and removal rate of metal layer during polishing
- Operates within a temperature range of 10°C to 75°C
Potential Applications: This technology can be applied in the semiconductor industry for polishing metal layers in the manufacturing of electronic devices. It can also be used in the production of precision optical components where metal layers need to be polished with precision.
Problems Solved: 1. Control of etch rate and removal rate during chemical mechanical polishing 2. Precision polishing of metal layers in various industries
Benefits: 1. Improved control over the polishing process 2. Enhanced precision in metal layer polishing 3. Increased efficiency in manufacturing electronic and optical components
Commercial Applications: The technology can be utilized in semiconductor fabrication plants, optical component manufacturing facilities, and other industries requiring precise metal layer polishing for commercial production.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching patents and publications in the field of chemical mechanical polishing, metal layer polishing, and temperature-sensitive polishing agents.
Frequently Updated Research: Stay informed about the latest advancements in chemical mechanical polishing techniques, temperature-sensitive oxidizing agents, and metal layer polishing processes to enhance the application of this technology.
Questions about Chemical Mechanical Polishing Slurry: 1. How does the temperature-sensitive oxidizing agent impact the polishing process? 2. What are the potential challenges in implementing this technology in large-scale manufacturing processes?
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Original Abstract Submitted
provided is a chemical mechanical polishing slurry used for chemical mechanical polishing of a metal layer. the chemical mechanical polishing slurry may include deionized water, abrasive particles, and an aqueous solution including a temperature-sensitive oxidizing agent configured to control both the static etch rate and removal rate of the metal layer in a chemical mechanical polishing process when the polishing temperature of the chemical mechanical polishing process is 10� c. to 75� c.
