Samsung electronics co., ltd. (20240318037). SLURRY COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME simplified abstract
Contents
SLURRY COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME
Organization Name
Inventor(s)
Suyeong Jung of Anseong si (KR)
Hyungoo Kong of Anseong si (KR)
Sanghyun Park of Suwon si (KR)
SLURRY COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240318037 titled 'SLURRY COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME
The present disclosure pertains to slurry compositions for chemical mechanical polishing of a metal film. An example slurry composition contains abrasive particles, deionized water, and a temperature-sensitive oxidizer with iodine, capable of controlling the static etch rate and removal rate of the metal film within a polishing temperature range of about 5°C to about 100°C.
- The slurry composition includes abrasive particles, deionized water, and a temperature-sensitive oxidizer with iodine.
- The oxidizer can control both the static etch rate and removal rate of the metal film during polishing.
- The temperature range for polishing is about 5°C to about 100°C.
Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Metal finishing processes
Problems Solved: - Controlling the etch rate and removal rate of metal films during chemical mechanical polishing - Achieving precise polishing results within a specific temperature range
Benefits: - Enhanced control over the polishing process - Improved efficiency and accuracy in metal film polishing
Commercial Applications: Title: Advanced Slurry Composition for Metal Film Polishing This technology can be utilized in semiconductor fabrication facilities, microelectronics manufacturing plants, and metal finishing industries to enhance the precision and efficiency of metal film polishing processes.
Questions about the technology: 1. How does the temperature-sensitive oxidizer with iodine contribute to controlling the etch rate and removal rate of the metal film during polishing? 2. What are the specific advantages of using this slurry composition compared to traditional polishing methods?
Original Abstract Submitted
the present disclosure relates to slurry compositions used for chemical mechanical polishing of a metal film. an example slurry composition includes abrasive particles, deionized water, and an oxidizer. the oxidizer includes iodine, and is a temperature-sensitive oxidizer capable of controlling both a static etch rate and a removal rate of the metal film when a polishing temperature during the chemical mechanical polishing is about 5� c. to about 100� c.
