Intel corporation (20240324167). ARCHITECTURES AND METHODS FOR COMPUTATION IN MEMORY (CIM) WITH BACKSIDE MEMORY USING HIGH PERFORMANCE (HP) THIN FILM TRANSISTOR (TFT) MATERIAL simplified abstract
ARCHITECTURES AND METHODS FOR COMPUTATION IN MEMORY (CIM) WITH BACKSIDE MEMORY USING HIGH PERFORMANCE (HP) THIN FILM TRANSISTOR (TFT) MATERIAL
Organization Name
Inventor(s)
Sudipto Naskar of Portland OR (US)
Abhishek Anil Sharma of Portland OR (US)
Sukru Yemenicioglu of Portland OR (US)
Weimin Han of Portland OR (US)
ARCHITECTURES AND METHODS FOR COMPUTATION IN MEMORY (CIM) WITH BACKSIDE MEMORY USING HIGH PERFORMANCE (HP) THIN FILM TRANSISTOR (TFT) MATERIAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324167 titled 'ARCHITECTURES AND METHODS FOR COMPUTATION IN MEMORY (CIM) WITH BACKSIDE MEMORY USING HIGH PERFORMANCE (HP) THIN FILM TRANSISTOR (TFT) MATERIAL
- Simplified Explanation:**
This patent application describes a high-performance thin film transistor (TFT) architecture that allows for the fabrication of backside memory after metallization has started, or as part of back-end-of-line (BEOL) processes. The architecture includes a through silicon via (TSV) to connect logic and memory in the die.
- Key Features and Innovation:**
- High-performance TFT material suitable for fabricating memory stack at lower BEOL temperatures
- Enables switching speed requirements of a 3D memory stack in the CIM component
- Through silicon via (TSV) architecture for connecting logic and memory in the die
- Potential Applications:**
This technology can be applied in the semiconductor industry for the fabrication of memory stacks in advanced integrated circuits.
- Problems Solved:**
This technology addresses the challenge of integrating memory fabrication processes after metallization has started, enabling efficient memory stack production.
- Benefits:**
- Improved performance in memory stack fabrication
- Enhanced connectivity between logic and memory components
- Increased efficiency in back-end-of-line processes
- Commercial Applications:**
The technology can be utilized in the production of high-performance memory chips for various electronic devices, such as smartphones, tablets, and computers.
- Prior Art:**
Readers interested in prior art related to this technology can explore patents and research papers in the field of semiconductor manufacturing processes, thin film transistors, and memory stack fabrication.
- Frequently Updated Research:**
Researchers in the semiconductor industry are constantly exploring new materials and architectures to improve memory stack fabrication processes and enhance overall performance.
- Questions about Thin Film Transistor (TFT) Architecture:**
1. What are the key advantages of using a high-performance TFT material in memory stack fabrication? 2. How does the through silicon via (TSV) architecture improve connectivity between logic and memory components in the die?
Original Abstract Submitted
a high performance (hp) thin film transistor (tft) architecture to enable fabricating backside memory after metallization starts, or as part of back end of line (beol) processes. the hp tft material is suitable for fabricating the memory stack at the lower beol temperatures while still delivering the switching speed requirements of a 3d memory stack in the cim component. a through silicon via (tsv) architecture connects the logic and the memory in the die.
