Intel corporation (20240321987). LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES simplified abstract

LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES

Organization Name

intel corporation

Inventor(s)

Tao Chu of Portland OR (US)

Guowei Xu of Portland OR (US)

Robin Chao of Portland OR (US)

Chiao-Ti Huang of Portland OR (US)

Feng Zhang of Hillsboro OR (US)

Minwoo Jang of Portland OR (US)

Chia-Ching Lin of Portland OR (US)

Biswajeet Guha of Hillsboro OR (US)

Yue Zhong of Portland OR (US)

Anand S. Murthy of Portland OR (US)

LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321987 titled 'LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES

The abstract describes integrated circuit devices that combine nanoribbon-based transistors and fin-shaped transistors. Nanoribbon transistors have shorter channel lengths and thinner gate dielectrics compared to fin transistors.

• Nanoribbon-based transistors and fin-shaped transistors are integrated into the same integrated circuit devices.
• Nanoribbon transistors have shorter channel lengths than fin transistors.
• Nanoribbon transistors have thinner gate dielectrics compared to fin transistors.

Potential Applications: - High-performance computing - Advanced mobile devices - Internet of Things (IoT) devices

Problems Solved: - Improved performance and efficiency in integrated circuits - Enhanced speed and power consumption in electronic devices

Benefits: - Increased speed and efficiency in electronic devices - Reduction in power consumption - Enhanced overall performance of integrated circuits

Commercial Applications: Title: "Next-Generation Integrated Circuits for High-Performance Computing and Mobile Devices" This technology can be utilized in the development of advanced processors for high-performance computing systems and mobile devices, leading to faster and more efficient electronic devices in the market.

Questions about the technology: 1. How does the integration of nanoribbon-based transistors and fin-shaped transistors improve the performance of integrated circuits? 2. What are the potential challenges in manufacturing integrated circuit devices with both types of transistors?

Original Abstract Submitted

described herein are integrated circuit devices that include both nanoribbon-based transistors and fin-shaped transistors. the nanoribbon transistors may have shorter channel lengths than the fin transistors. in addition, the nanoribbon transistors may have thinner gate dielectrics than the fin transistors.