Intel corporation (20240321978). CONTACT EXTENDED OVER AN ADJACENT SOURCE OR DRAIN REGION simplified abstract

CONTACT EXTENDED OVER AN ADJACENT SOURCE OR DRAIN REGION

Organization Name

intel corporation

Inventor(s)

Leonard P. Guler of Hillsboro OR (US)

Shengsi Liu of Portland OR (US)

Baofu Zhu of Portland OR (US)

Charles H. Wallace of Portland OR (US)

Clifford J. Engel of Hillsboro OR (US)

Gary Allen of Portland OR (US)

Saurabh Acharya of Hillsboro OR (US)

Thomas Obrien of Portland OR (US)

CONTACT EXTENDED OVER AN ADJACENT SOURCE OR DRAIN REGION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321978 titled 'CONTACT EXTENDED OVER AN ADJACENT SOURCE OR DRAIN REGION

The abstract describes techniques for forming semiconductor devices with contacts over source or drain regions that extend over adjacent regions without contacting them. This is achieved by using gate structures around fins of semiconductor material or nanowires/nanoribbons/nanosheets that extend from the source or drain region.

• Semiconductor devices include gate structures around fins or nanowires/nanoribbons/nanosheets of semiconductor material.
• Contacts are formed over source or drain regions, extending laterally across the trench above adjacent regions without contacting them.
• Contacts may extend through a dielectric wall orthogonally through the source/drain trench.

Potential Applications: - Advanced semiconductor devices - High-performance electronics - Nanotechnology research and development

Problems Solved: - Improved contact formation over source/drain regions - Enhanced device performance and efficiency

Benefits: - Increased device functionality - Better control over electrical properties - Potential for smaller and more efficient devices

Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Electronics This technology could be used in the development of next-generation electronics, such as smartphones, computers, and other consumer electronics. It may also have applications in the automotive industry for advanced driver assistance systems (ADAS) and autonomous vehicles.

Questions about the technology: 1. How does this innovation improve the performance of semiconductor devices? 2. What are the potential challenges in implementing this technology in mass production?

Frequently Updated Research: Researchers are continually exploring new materials and structures to further enhance the capabilities of semiconductor devices. Stay updated on the latest advancements in nanotechnology and semiconductor research to understand the full potential of this technology.

Original Abstract Submitted

techniques are provided herein to form semiconductor devices that include a contact over a given source or drain region that extends over the top of an adjacent source or drain region without contacting it. in an example, a semiconductor device includes a gate structure around a fin of semiconductor material that extends from a source or drain region, or one or more nanowires or nanoribbons or nanosheets of semiconductor material that extend from the source or drain region. a conductive contact is formed over the source or drain region that extends laterally across the source/drain trench above an adjacent source or drain region without contacting the adjacent source or drain region. the contact may extend along the source/drain trench through a dielectric wall (e.g., a gate cut) that extends orthogonally through the source/drain trench.