Intel corporation (20240321887). INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT simplified abstract

INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT

Organization Name

intel corporation

Inventor(s)

Tao Chu of Portland OR (US)

Yanbin Luo of Portland OR (US)

Yusung Kim of Portland OR (US)

Minwoo Jang of Portland OR (US)

Paul Packan of Hillsboro OR (US)

Guowei Xu of Portland OR (US)

Chiao-Ti Huang of Portland OR (US)

Robin Chao of Portland OR (US)

Feng Zhang of Hillsboro OR (US)

Yang Zhang of Rio Rancho NM (US)

Zheng Guo of Hillsboro OR (US)

INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321887 titled 'INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT

Simplified Explanation: The patent application describes an IC device layout designed to reduce the n-p boundary effect by strategically placing p-type and n-type transistors in two rows, with the gate electrodes of the transistors made of different conductive materials. This layout helps mitigate vacancy diffusion at the boundary between the transistors, which can cause the n-p boundary effect.

Key Features and Innovation:

• IC device layout with reduced n-p boundary effect
• Two rows of transistors - one row of p-type transistors and one row of n-type transistors
• Gate electrodes made of different conductive materials for p-type and n-type transistors
• P-type transistors in the first row positioned over n-type transistors in the second row
• Some n-type transistors in the second row do not contact any p-type transistors to mitigate the n-p boundary effect

Potential Applications: This technology can be applied in the semiconductor industry for the design and manufacturing of integrated circuits with improved performance and reliability.

Problems Solved: The technology addresses the issue of n-p boundary effect in IC devices, which can impact the overall functionality and efficiency of the circuits.

Benefits:

• Enhanced performance and reliability of IC devices
• Reduction of n-p boundary effect
• Improved manufacturing process for integrated circuits

Commercial Applications: Potential commercial applications include the production of high-performance electronic devices, such as smartphones, computers, and other consumer electronics.

Prior Art: Prior research in the field of semiconductor device design and manufacturing may provide insights into similar approaches to reducing n-p boundary effects in IC devices.

Frequently Updated Research: Researchers in the semiconductor industry may be conducting ongoing studies to further optimize IC device layouts for minimizing boundary effects and improving overall performance.

Questions about IC Device Layout with Reduced N-P Boundary Effect: 1. How does the use of different conductive materials for gate electrodes in p-type and n-type transistors help reduce the n-p boundary effect? 2. What are some potential challenges in implementing this IC device layout in large-scale semiconductor manufacturing processes?

Original Abstract Submitted

an ic device may have layout with reduced n-p boundary effect. the ic device may include two rows of transistors. the first row may include one or more p-type transistors. the second row may include n-type transistors. the gate electrode of a p-type transistor may include different conductive materials from the gate electrode of a n-type transistor. each p-type transistor in the first row may be over a n-type transistor in the second row and contact the n-type transistor in the second row. for instance, the gate of the p-type transistor may contact the gate of the n-type transistor. vacancy diffusion may occur at the boundary of the p-type transistor and the n-type transistor, causing n-p boundary effect. at least one or more other n-type transistors in the second row do not contact any p-type transistor, which can mitigate the n-p boundary effect in the ic device.