Intel corporation (20240321685). SEMICONDUCTOR DEVICES BETWEEN GATE CUTS AND DEEP BACKSIDE VIAS simplified abstract
Contents
SEMICONDUCTOR DEVICES BETWEEN GATE CUTS AND DEEP BACKSIDE VIAS
Organization Name
Inventor(s)
Leonard P. Guler of Hillsboro OR (US)
Shengsi Liu of Portland OR (US)
Saurabh Acharya of Hillsboro OR (US)
Charles H. Wallace of Portland OR (US)
SEMICONDUCTOR DEVICES BETWEEN GATE CUTS AND DEEP BACKSIDE VIAS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321685 titled 'SEMICONDUCTOR DEVICES BETWEEN GATE CUTS AND DEEP BACKSIDE VIAS
The patent application describes techniques for forming semiconductor devices between a gate cut on one side and a deep backside via on the other side. Each semiconductor device includes a semiconductor region, source or drain regions, and a gate structure.
- The semiconductor devices are arranged in a row, with each device having a semiconductor region extending in one direction and a gate structure extending in another direction.
- The devices are separated from each other by either a gate cut or a deep backside via along the second direction.
- The gate cut is a dielectric wall that goes through the entire thickness of the gate structure.
- The deep backside via includes a conductive layer and a dielectric barrier that also extend through the entire thickness of the gate structure.
- Each semiconductor device has a gate cut on one side and a deep backside via on the other side.
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronics industry
Problems Solved: - Efficient arrangement of semiconductor devices - Improved performance of semiconductor devices - Enhanced reliability of semiconductor devices
Benefits: - Higher density of semiconductor devices - Better control over device separation - Increased overall device performance
Commercial Applications: - Semiconductor fabrication companies - Electronics manufacturers - Research institutions in the semiconductor industry
Questions about the technology: 1. How does the use of gate cuts and deep backside vias improve the performance of semiconductor devices? 2. What are the potential challenges in implementing this technology in large-scale semiconductor manufacturing processes?
Original Abstract Submitted
techniques are provided herein to form semiconductor devices arranged between a gate cut on one side and a deep backside via on the other side. a row of semiconductor devices each include a semiconductor region extending in a first direction between corresponding source or drain regions, and a gate structure extending in a second direction over the semiconductor regions. each semiconductor device may be separated from an adjacent semiconductor device along the second direction by either a gate cut or a deep backside via. the gate cut may be a dielectric wall that extends through an entire thickness of the gate structure and the deep backside via may include a conductive layer and a dielectric barrier that also extend through at least an entire thickness of the gate structure. each semiconductor device may include a gate cut on one side and a deep backside via on the other side.
