17651671. Isolation Layers for Reducing Leakages Between Contacts simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
Isolation Layers for Reducing Leakages Between Contacts
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Po-Hsien Cheng of Hsinchu (TW)
Isolation Layers for Reducing Leakages Between Contacts - A simplified explanation of the abstract
This abstract first appeared for US patent application 17651671 titled 'Isolation Layers for Reducing Leakages Between Contacts
Simplified Explanation
The patent application describes a structure for a semiconductor device that includes various components such as a gate stack, source/drain regions, contact etch stop layer, inter-layer dielectric, silicide region, source/drain contact plug, and isolation layer.
- The source/drain contact plug is elongated in shape when viewed from the top.
- The isolation layer surrounding the source/drain contact plug has different thicknesses in different parts.
- The end portion of the isolation layer, located at the end of the source/drain contact plug, is thicker than the middle portion between the ends.
Potential applications of this technology:
- Semiconductor devices manufacturing
- Integrated circuits production
- Electronics industry
Problems solved by this technology:
- Provides improved isolation between the source/drain contact plug and other components.
- Enhances the performance and reliability of the semiconductor device.
- Reduces the risk of short circuits or other electrical issues.
Benefits of this technology:
- Increased efficiency and functionality of semiconductor devices.
- Improved manufacturing process and yield.
- Enhanced durability and longevity of the devices.
Original Abstract Submitted
A structure includes a gate stack over a semiconductor region, a source/drain region on a side of the gate stack, a contact etch stop layer over a part of the source/drain region, an inter-layer dielectric over the contact etch stop layer, a silicide region over the source/drain region, a source/drain contact plug over and contacting the silicide region, and an isolation layer encircling the source/drain contact plug. In a top view of the source/drain contact plug, the source/drain contact plug is elongated, and the isolation layer includes an end portion at an end of the source/drain contact plug, and a middle portion between opposing ends of the source/drain contact plug. An end-portion thickness of the end portion is greater than a middle-portion thickness of the middle portion.
