18456071. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Katsuhisa Tanaka of Himeji Hyogo (JP)
Hiroshi Kono of Himeji Hyogo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18456071 titled 'SEMICONDUCTOR DEVICE
The abstract describes a patent application for a silicon carbide layer with specific surface configurations and the inclusion of an inter-layer insulating film and a field plate.
- The silicon carbide layer has a first surface, a second surface recessed further towards a third surface, and a side surface.
- An inter-layer insulating film is located on the second surface, with a thickness greater than the difference in heights between the first and second surfaces.
- A field plate with lower resistivity than the inter-layer insulating film is positioned within the inter-layer insulating film.
Potential Applications: - Power electronics - Semiconductor devices - High-temperature applications
Problems Solved: - Improved insulation and field control in silicon carbide devices - Enhanced performance and reliability in high-power applications
Benefits: - Increased efficiency and durability - Better thermal management - Reduced power losses
Commercial Applications: Silicon carbide devices incorporating this technology could be used in electric vehicles, renewable energy systems, and industrial power supplies.
Questions about the Technology: 1. How does the field plate contribute to the performance of silicon carbide devices? 2. What advantages does the inter-layer insulating film provide in high-power applications?
Original Abstract Submitted
A silicon carbide layer includes a first surface, a second surface, a third surface positioned at a side opposite to the first and second surfaces in a first direction, and a side surface. The second surface is at a position recessed further toward the third surface side than the first surface. An inter-layer insulating film is located on the second surface. A thickness of the inter-layer insulating film is greater than a difference in heights in the first direction between the first surface and the second surface. A field plate is located in the inter-layer insulating film. The field plate has a lower resistivity than the inter-layer insulating film.
