18463237. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shunsuke Asaba of Himeji Hyogo (JP)
Hiroshi Kono of Himeji Hyogo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18463237 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of multiple semiconductor layers with varying conductivity types, connected by electrodes.
- The device includes a first electrode, a first semiconductor layer of a first conductivity type, second semiconductor layers of a second conductivity type, a third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of the second conductivity type.
- The layers are made of silicon and carbon, providing unique properties to the device.
- The second electrode faces the second semiconductor layer through an insulating film, while a third electrode is connected to the second and third semiconductor layers.
Potential Applications: - This semiconductor device could be used in electronic devices such as transistors, diodes, and integrated circuits. - It may also find applications in solar cells, sensors, and other semiconductor-based technologies.
Problems Solved: - The device addresses the need for efficient and reliable semiconductor components with specific conductivity types. - It offers a solution for creating complex semiconductor structures with multiple layers.
Benefits: - Improved performance and functionality of electronic devices. - Enhanced efficiency and reliability in semiconductor applications. - Potential for new innovations in semiconductor technology.
Commercial Applications: Title: Advanced Semiconductor Device for Enhanced Electronics This technology could be utilized in the manufacturing of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and renewable energy.
Questions about the technology: 1. How does the incorporation of silicon and carbon in the semiconductor layers impact the device's performance? 2. What potential challenges could arise in the mass production of this semiconductor device?
Original Abstract Submitted
A semiconductor device includes a first electrode, a first semiconductor layer connected to the first electrode and being of a first conductivity type, second semiconductor layers located on a portion of the first semiconductor layer and being of a second conductivity type, a third semiconductor layer located on a portion of the second semiconductor layer and being of the first conductivity type, a fourth semiconductor layer located in a portion of the first semiconductor layer between the second semiconductor layers and being of the second conductivity type, a second electrode facing the second semiconductor layer via an insulating film, and a third electrode connected to the second and third semiconductor layers. The first, second, third, and fourth semiconductor layers include silicon and carbon.
