18450656. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Masaru Furukawa of Himeji Hyogo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18450656 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation: The semiconductor device described in the abstract consists of a silicon carbide layer with different conductivity regions and a gate electrode.
- The device includes a first silicon carbide region of a first conductivity type, a second silicon carbide region of a second conductivity type, and a third silicon carbide region of the first conductivity type.
- The first silicon carbide region is divided into first, second, and third regions, with the second and third regions having higher impurity concentrations than the first region.
- The second and third regions are alternately arranged in a parallel direction to the first face of the silicon carbide layer.
Key Features and Innovation:
- Utilization of silicon carbide layer with different conductivity regions.
- Alternating arrangement of high impurity concentration regions within the first silicon carbide region.
- Gate electrode for controlling the device.
Potential Applications:
- Power electronics.
- High-temperature applications.
- Electric vehicles.
- Renewable energy systems.
Problems Solved:
- Improved efficiency in power electronics.
- Enhanced performance in high-temperature environments.
- Increased reliability in electric vehicle components.
Benefits:
- Higher efficiency.
- Greater reliability.
- Improved performance in extreme conditions.
Commercial Applications: The technology can be applied in power electronics for various industries, including automotive, renewable energy, and aerospace sectors.
Questions about Silicon Carbide Semiconductor Device: 1. How does the alternating arrangement of high impurity concentration regions affect the performance of the device? 2. What are the specific advantages of using a silicon carbide layer in semiconductor devices?
Frequently Updated Research: Ongoing research focuses on optimizing the design and performance of silicon carbide semiconductor devices for enhanced efficiency and reliability.
Original Abstract Submitted
A semiconductor device according to an embodiment includes a silicon carbide layer having a first face and a second face; a first silicon carbide region of a first conductivity type; a second silicon carbide region of a second conductivity type; a third silicon carbide region of the first conductivity type in the silicon carbide layer in this order in a direction from the second face to the first face; and a gate electrode. The first silicon carbide region includes a first region, second regions, and third regions. The second regions and the third regions are provided between the first region and the second silicon carbide region. The second regions and the third regions are alternately provided in a first direction parallel to the first face, and the first conductivity type impurity concentration of the second regions is higher than those of the first region and the third regions.
