18462876. SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Organization Name
Inventor(s)
Tatsuo Shimizu of Shinagawa Tokyo (JP)
SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18462876 titled 'SEMICONDUCTOR DEVICE MANUFACTURING METHOD
The semiconductor device manufacturing method described in the abstract involves several key steps:
- First ion implantation of aluminum into a silicon carbide layer with a specific dose amount.
- First heat treatment at a high temperature of 1600°C or higher.
- First etching process using plasma generated from a gas containing halogen and oxygen.
- Second etching process in an atmosphere containing hydrogen plasma or atomic hydrogen.
- Formation of a silicon oxide film on the surface.
- Formation of a gate electrode on the silicon oxide film.
Potential Applications: - This method can be used in the production of high-performance semiconductor devices. - It may find applications in the manufacturing of advanced electronic components.
Problems Solved: - This method addresses the need for precise implantation and treatment of materials in semiconductor manufacturing. - It improves the efficiency and performance of semiconductor devices.
Benefits: - Enhanced performance and reliability of semiconductor devices. - Improved manufacturing processes leading to higher quality products.
Commercial Applications: - This technology could be valuable in the production of cutting-edge electronics for various industries such as telecommunications, automotive, and consumer electronics.
Questions about the Semiconductor Device Manufacturing Method: 1. How does the use of aluminum in the silicon carbide layer impact the performance of the semiconductor device? 2. What are the specific advantages of using plasma etching processes in semiconductor manufacturing?
Frequently Updated Research: Researchers are continually exploring ways to optimize the manufacturing processes of semiconductor devices to enhance their performance and efficiency. Stay updated on the latest advancements in this field for potential improvements in technology.
Original Abstract Submitted
A semiconductor device manufacturing method of embodiments includes: performing first ion implantation for implanting aluminum into a silicon carbide layer with a first dose amount; performing first heat treatment at a temperature equal to or more than 1600° C.; performing first etching process for etching a surface of the silicon carbide layer in an atmosphere containing plasma generated from a gas containing halogen and oxygen; performing second etching process for etching the surface in an atmosphere containing hydrogen plasma or atomic hydrogen; forming a silicon oxide film on the surface; and forming a gate electrode on the silicon oxide film.
